JP2010206175A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2010206175A
JP2010206175A JP2009298744A JP2009298744A JP2010206175A JP 2010206175 A JP2010206175 A JP 2010206175A JP 2009298744 A JP2009298744 A JP 2009298744A JP 2009298744 A JP2009298744 A JP 2009298744A JP 2010206175 A JP2010206175 A JP 2010206175A
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JP
Japan
Prior art keywords
shot
wafer
exposure
area
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2009298744A
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English (en)
Japanese (ja)
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JP2010206175A5 (cg-RX-API-DMAC7.html
Inventor
Michihiro Murata
通博 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2009298744A priority Critical patent/JP2010206175A/ja
Priority to US12/658,383 priority patent/US8119312B2/en
Priority to CN201010124748.4A priority patent/CN101826454B/zh
Publication of JP2010206175A publication Critical patent/JP2010206175A/ja
Publication of JP2010206175A5 publication Critical patent/JP2010206175A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009298744A 2009-02-06 2009-12-28 半導体装置の製造方法 Withdrawn JP2010206175A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009298744A JP2010206175A (ja) 2009-02-06 2009-12-28 半導体装置の製造方法
US12/658,383 US8119312B2 (en) 2009-02-06 2010-02-05 Manufacturing method for a semiconductor device
CN201010124748.4A CN101826454B (zh) 2009-02-06 2010-02-05 半导体装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009026506 2009-02-06
JP2009298744A JP2010206175A (ja) 2009-02-06 2009-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010206175A true JP2010206175A (ja) 2010-09-16
JP2010206175A5 JP2010206175A5 (cg-RX-API-DMAC7.html) 2012-11-29

Family

ID=42540679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009298744A Withdrawn JP2010206175A (ja) 2009-02-06 2009-12-28 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US8119312B2 (cg-RX-API-DMAC7.html)
JP (1) JP2010206175A (cg-RX-API-DMAC7.html)
CN (1) CN101826454B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003088A (ja) * 2012-06-15 2014-01-09 Fujitsu Semiconductor Ltd 露光方法、露光装置およびフォトマスク

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101551777B1 (ko) * 2008-11-06 2015-09-10 삼성전자 주식회사 노광 장치 및 노광 데이터의 압축방법
JP2015041094A (ja) * 2013-08-23 2015-03-02 株式会社東芝 露光装置、露光方法および露光プログラム
US10859922B1 (en) * 2019-07-18 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography system and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304075A (ja) * 1992-04-27 1993-11-16 Sony Corp 投影露光方法及び投影露光装置
JPH1032163A (ja) * 1996-07-12 1998-02-03 Canon Inc デバイス製造装置および方法
JP2004157327A (ja) * 2002-11-06 2004-06-03 Kawasaki Microelectronics Kk 半導体デバイス用マスク、および露光方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04168718A (ja) * 1990-10-31 1992-06-16 Mitsubishi Electric Corp 露光装置
KR0145147B1 (ko) * 1994-10-21 1998-08-17 김주용 노광기의 광 차단수단
JP2002195912A (ja) * 2000-12-27 2002-07-10 Nikon Corp 光学特性計測方法及び装置、露光装置、並びにデバイス製造方法
JP2006108305A (ja) * 2004-10-04 2006-04-20 Nikon Corp ベストフォーカス位置検出方法とその装置、露光方法とその装置及びデバイス製造方法
KR20060055944A (ko) * 2004-11-19 2006-05-24 삼성전자주식회사 웨이퍼 노광 방법 및 이를 수행하기 위한 웨이퍼 노광 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304075A (ja) * 1992-04-27 1993-11-16 Sony Corp 投影露光方法及び投影露光装置
JPH1032163A (ja) * 1996-07-12 1998-02-03 Canon Inc デバイス製造装置および方法
JP2004157327A (ja) * 2002-11-06 2004-06-03 Kawasaki Microelectronics Kk 半導体デバイス用マスク、および露光方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003088A (ja) * 2012-06-15 2014-01-09 Fujitsu Semiconductor Ltd 露光方法、露光装置およびフォトマスク
US10012912B2 (en) 2012-06-15 2018-07-03 Fujitsu Semiconductor Limited Exposure method, exposure apparatus, and photomask

Also Published As

Publication number Publication date
US8119312B2 (en) 2012-02-21
CN101826454A (zh) 2010-09-08
US20100203433A1 (en) 2010-08-12
CN101826454B (zh) 2015-01-14

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