JP2010206175A5 - - Google Patents

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Publication number
JP2010206175A5
JP2010206175A5 JP2009298744A JP2009298744A JP2010206175A5 JP 2010206175 A5 JP2010206175 A5 JP 2010206175A5 JP 2009298744 A JP2009298744 A JP 2009298744A JP 2009298744 A JP2009298744 A JP 2009298744A JP 2010206175 A5 JP2010206175 A5 JP 2010206175A5
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JP
Japan
Prior art keywords
shot
wafer
exposure
region
focus detection
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Application number
JP2009298744A
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English (en)
Japanese (ja)
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JP2010206175A (ja
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Publication date
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Priority to JP2009298744A priority Critical patent/JP2010206175A/ja
Priority claimed from JP2009298744A external-priority patent/JP2010206175A/ja
Priority to US12/658,383 priority patent/US8119312B2/en
Priority to CN201010124748.4A priority patent/CN101826454B/zh
Publication of JP2010206175A publication Critical patent/JP2010206175A/ja
Publication of JP2010206175A5 publication Critical patent/JP2010206175A5/ja
Withdrawn legal-status Critical Current

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JP2009298744A 2009-02-06 2009-12-28 半導体装置の製造方法 Withdrawn JP2010206175A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009298744A JP2010206175A (ja) 2009-02-06 2009-12-28 半導体装置の製造方法
US12/658,383 US8119312B2 (en) 2009-02-06 2010-02-05 Manufacturing method for a semiconductor device
CN201010124748.4A CN101826454B (zh) 2009-02-06 2010-02-05 半导体装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009026506 2009-02-06
JP2009298744A JP2010206175A (ja) 2009-02-06 2009-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010206175A JP2010206175A (ja) 2010-09-16
JP2010206175A5 true JP2010206175A5 (cg-RX-API-DMAC7.html) 2012-11-29

Family

ID=42540679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009298744A Withdrawn JP2010206175A (ja) 2009-02-06 2009-12-28 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US8119312B2 (cg-RX-API-DMAC7.html)
JP (1) JP2010206175A (cg-RX-API-DMAC7.html)
CN (1) CN101826454B (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101551777B1 (ko) * 2008-11-06 2015-09-10 삼성전자 주식회사 노광 장치 및 노광 데이터의 압축방법
JP6003272B2 (ja) 2012-06-15 2016-10-05 富士通セミコンダクター株式会社 露光方法および露光装置
JP2015041094A (ja) * 2013-08-23 2015-03-02 株式会社東芝 露光装置、露光方法および露光プログラム
US10859922B1 (en) * 2019-07-18 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography system and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04168718A (ja) * 1990-10-31 1992-06-16 Mitsubishi Electric Corp 露光装置
JPH05304075A (ja) * 1992-04-27 1993-11-16 Sony Corp 投影露光方法及び投影露光装置
KR0145147B1 (ko) * 1994-10-21 1998-08-17 김주용 노광기의 광 차단수단
JPH1032163A (ja) * 1996-07-12 1998-02-03 Canon Inc デバイス製造装置および方法
JP2002195912A (ja) * 2000-12-27 2002-07-10 Nikon Corp 光学特性計測方法及び装置、露光装置、並びにデバイス製造方法
JP4481561B2 (ja) * 2002-11-06 2010-06-16 川崎マイクロエレクトロニクス株式会社 半導体デバイス用マスク
JP2006108305A (ja) * 2004-10-04 2006-04-20 Nikon Corp ベストフォーカス位置検出方法とその装置、露光方法とその装置及びデバイス製造方法
KR20060055944A (ko) * 2004-11-19 2006-05-24 삼성전자주식회사 웨이퍼 노광 방법 및 이를 수행하기 위한 웨이퍼 노광 장치

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