JP2010166024A - 半導体装置およびその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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Abstract
【解決手段】JFET1は、少なくとも上部表面14Aが炭化珪素からなるウェハ10と、上部表面14A上に形成されたゲートコンタクト電極21とを備える。ウェハ10は、上部表面14Aを含むように形成されたイオン注入領域である第1のp型領域16を含む。第1のp型領域16は、上部表面14Aを含むように配置されるベース領域16Aと、突出領域16Bとを含む。ベース領域16Aは、上部表面14Aに沿った方向における幅w1が、突出領域16Bの幅w2よりも広い。ゲートコンタクト電極21は、平面的に見てその全体が第1のp型領域16に重なるように、第1のp型領域16に接触して配置されている。
【選択図】図1
Description
Claims (11)
- 少なくとも一方の主面が炭化珪素からなるウェハと、
前記一方の主面上に形成された電極とを備え、
前記ウェハは、前記一方の主面を含むように形成されたイオン注入領域を含み、
前記イオン注入領域は、
前記一方の主面を含むように配置されるベース領域と、
前記ベース領域に接続され、前記電極とは反対側に向けて延びる突出領域とを含み、
前記ベース領域は、前記一方の主面に沿った方向における幅が、前記突出領域よりも広く、
前記電極は、平面的に見てその全体が前記イオン注入領域に重なるように、前記イオン注入領域に接触して配置されている、半導体装置。 - 前記半導体装置は接合型電界効果トランジスタであり、
前記電極はゲート電極である、請求項1に記載の半導体装置。 - 前記ウェハは、
第1の第1導電型層と、
前記第1の第1導電型層上に接触して配置され、導電型が前記第1の第1導電型層とは異なる第2導電型層と、
前記第2導電型層上に接触して配置され、導電型が前記第1の第1導電型層と同じである第2の第1導電型層とを含んでいる、請求項2に記載の半導体装置。 - 前記ウェハの厚み方向における前記ベース領域の厚さは、前記一方の主面から前記第2の第1導電型層と前記第2導電型層との界面までの距離以下となっている、請求項3に記載の半導体装置。
- 前記一方の主面に沿った方向における前記ベース領域の幅は、前記突出領域よりも0.2μm以上1.0μm以下だけ広い、請求項1〜4のいずれか1項に記載の半導体装置。
- 前記ベース領域は、0.3μm以上の厚みを有している、請求項1〜5のいずれか1項に記載の半導体装置。
- 少なくとも一方の主面が炭化珪素からなるウェハを準備する工程と、
前記一方の主面上に、前記ウェハへのイオンの注入を阻止する阻止層を形成する工程と、
前記阻止層に開口を形成する工程と、
前記開口が形成された前記阻止層をマスクとして用いて第1導電型のイオンを注入することにより、前記第1導電型のイオンが注入された第1領域を前記ウェハに形成する工程と、
前記開口を拡大する工程と、
前記開口が拡大された前記阻止層をマスクとして用いて、前記第1領域を前記ウェハに形成する工程よりも浅く前記第1導電型のイオンを注入することにより、前記第1導電型のイオンが注入された第2領域を前記ウェハに形成する工程と、
平面的に見てその全体が前記第2領域に重なるように、前記ウェハ上に金属膜を形成する工程とを備えた、半導体装置の製造方法。 - 前記阻止層を形成する工程では、チタン層と前記チタン層上に配置されるタングステン層とを含む前記阻止層、チタン層と前記チタン層上に配置される二酸化珪素層とを含む前記阻止層、または二酸化珪素層と前記二酸化珪素層上に配置されるチタン層と前記チタン層上に配置されるタングステン層とを含む前記阻止層が形成される、請求項7に記載の半導体装置の製造方法。
- 前記開口を拡大する工程では、平面的に見て、前記開口の周縁が0.1μm以上0.5μm以下だけ移動するように前記開口が拡大される、請求項7または8に記載の半導体装置の製造方法。
- 前記第2領域を前記ウェハに形成する工程では、厚み0.3μm以上の前記第2領域が形成される、請求項7〜9のいずれか1項に記載の半導体装置の製造方法。
- 前記半導体装置は接合型電界効果トランジスタであり、
前記金属膜はゲート電極である、請求項7〜10のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2009244596A JP5564890B2 (ja) | 2008-12-16 | 2009-10-23 | 接合型電界効果トランジスタおよびその製造方法 |
CA2717077A CA2717077A1 (en) | 2008-12-16 | 2009-12-11 | Semiconductor device and method for manufacturing the same |
PCT/JP2009/070737 WO2010071084A1 (ja) | 2008-12-16 | 2009-12-11 | 半導体装置およびその製造方法 |
US12/919,992 US8643065B2 (en) | 2008-12-16 | 2009-12-11 | Semiconductor device and method for manufacturing the same |
KR1020107019280A KR101171586B1 (ko) | 2008-12-16 | 2009-12-11 | 반도체 장치 및 그 제조 방법 |
EP09833387.5A EP2360718B1 (en) | 2008-12-16 | 2009-12-11 | Semiconductor device and manufacturing method therefor |
CN2009801072023A CN101960575B (zh) | 2008-12-16 | 2009-12-11 | 半导体器件及其制造方法 |
TW098143162A TW201030971A (en) | 2008-12-16 | 2009-12-16 | Semiconductor device and manufacturing method therefor |
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JP2008319758 | 2008-12-16 | ||
JP2008319758 | 2008-12-16 | ||
JP2009244596A JP5564890B2 (ja) | 2008-12-16 | 2009-10-23 | 接合型電界効果トランジスタおよびその製造方法 |
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JP2010166024A true JP2010166024A (ja) | 2010-07-29 |
JP5564890B2 JP5564890B2 (ja) | 2014-08-06 |
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US (1) | US8643065B2 (ja) |
EP (1) | EP2360718B1 (ja) |
JP (1) | JP5564890B2 (ja) |
KR (1) | KR101171586B1 (ja) |
CN (1) | CN101960575B (ja) |
CA (1) | CA2717077A1 (ja) |
TW (1) | TW201030971A (ja) |
WO (1) | WO2010071084A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012086257A1 (ja) * | 2010-12-22 | 2012-06-28 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2013021219A (ja) * | 2011-07-13 | 2013-01-31 | Shindengen Electric Mfg Co Ltd | 半導体装置およびその製造方法 |
JP2016046273A (ja) * | 2014-08-19 | 2016-04-04 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102010024079A1 (de) * | 2010-06-17 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
JP2012160584A (ja) * | 2011-02-01 | 2012-08-23 | Sumitomo Electric Ind Ltd | 半導体装置 |
KR101444982B1 (ko) * | 2011-06-20 | 2014-09-29 | 주식회사 엘지화학 | 광전지 모듈용 냉각시트, 이의 제조 방법 및 이를 포함하는 광전지 모듈 |
JP5845714B2 (ja) * | 2011-08-19 | 2016-01-20 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2013080762A (ja) * | 2011-10-03 | 2013-05-02 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
EP2793265B1 (en) * | 2013-04-15 | 2017-06-07 | Nexperia B.V. | Semiconductor device and manufacturing method |
US11888056B2 (en) * | 2021-09-07 | 2024-01-30 | Fast SiC Semiconductor Incorporated | Silicon carbide MOS-gated semiconductor device |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012086257A1 (ja) * | 2010-12-22 | 2012-06-28 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US8642436B2 (en) | 2010-12-22 | 2014-02-04 | Sumitomo Electric Industries, Ltd. | Method of manufacturing silicon carbide semiconductor device |
JPWO2012086257A1 (ja) * | 2010-12-22 | 2014-05-22 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP5725024B2 (ja) * | 2010-12-22 | 2015-05-27 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US9082683B2 (en) | 2010-12-22 | 2015-07-14 | Sumitomo Electric Industries, Ltd. | Method of manufacturing silicon carbide semiconductor device |
JP2013021219A (ja) * | 2011-07-13 | 2013-01-31 | Shindengen Electric Mfg Co Ltd | 半導体装置およびその製造方法 |
JP2016046273A (ja) * | 2014-08-19 | 2016-04-04 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8643065B2 (en) | 2014-02-04 |
US20110001144A1 (en) | 2011-01-06 |
TW201030971A (en) | 2010-08-16 |
EP2360718B1 (en) | 2017-09-06 |
KR101171586B1 (ko) | 2012-08-06 |
WO2010071084A1 (ja) | 2010-06-24 |
CN101960575B (zh) | 2013-08-28 |
EP2360718A4 (en) | 2012-08-15 |
CA2717077A1 (en) | 2010-06-24 |
CN101960575A (zh) | 2011-01-26 |
KR20100118590A (ko) | 2010-11-05 |
JP5564890B2 (ja) | 2014-08-06 |
EP2360718A1 (en) | 2011-08-24 |
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