JP2010141306A5 - - Google Patents

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Publication number
JP2010141306A5
JP2010141306A5 JP2009257696A JP2009257696A JP2010141306A5 JP 2010141306 A5 JP2010141306 A5 JP 2010141306A5 JP 2009257696 A JP2009257696 A JP 2009257696A JP 2009257696 A JP2009257696 A JP 2009257696A JP 2010141306 A5 JP2010141306 A5 JP 2010141306A5
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JP
Japan
Prior art keywords
semiconductor region
semiconductor layer
thin film
manufacturing
film transistor
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JP2009257696A
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English (en)
Japanese (ja)
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JP5498762B2 (ja
JP2010141306A (ja
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Priority to JP2009257696A priority Critical patent/JP5498762B2/ja
Priority claimed from JP2009257696A external-priority patent/JP5498762B2/ja
Publication of JP2010141306A publication Critical patent/JP2010141306A/ja
Publication of JP2010141306A5 publication Critical patent/JP2010141306A5/ja
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Publication of JP5498762B2 publication Critical patent/JP5498762B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009257696A 2008-11-17 2009-11-11 薄膜トランジスタの作製方法 Expired - Fee Related JP5498762B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009257696A JP5498762B2 (ja) 2008-11-17 2009-11-11 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008293954 2008-11-17
JP2008293954 2008-11-17
JP2009257696A JP5498762B2 (ja) 2008-11-17 2009-11-11 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2010141306A JP2010141306A (ja) 2010-06-24
JP2010141306A5 true JP2010141306A5 (enrdf_load_stackoverflow) 2012-12-20
JP5498762B2 JP5498762B2 (ja) 2014-05-21

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JP2009257696A Expired - Fee Related JP5498762B2 (ja) 2008-11-17 2009-11-11 薄膜トランジスタの作製方法

Country Status (2)

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US (1) US8569120B2 (enrdf_load_stackoverflow)
JP (1) JP5498762B2 (enrdf_load_stackoverflow)

Families Citing this family (8)

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JP5525224B2 (ja) 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
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TWI606490B (zh) 2010-07-02 2017-11-21 半導體能源研究所股份有限公司 半導體膜的製造方法，半導體裝置的製造方法，和光電轉換裝置的製造方法
JP5948025B2 (ja) 2010-08-06 2016-07-06 株式会社半導体エネルギー研究所 液晶表示装置
JP5948040B2 (ja) 2010-11-04 2016-07-06 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法及び半導体装置の作製方法
US9048327B2 (en) * 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
JP6006948B2 (ja) * 2011-03-17 2016-10-12 株式会社半導体エネルギー研究所 微結晶半導体膜、及び半導体装置の作製方法
CN110797357A (zh) * 2018-08-02 2020-02-14 夏普株式会社 摄像面板及其制造方法

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