JP2010123654A - 光半導体装置 - Google Patents
光半導体装置 Download PDFInfo
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- JP2010123654A JP2010123654A JP2008294208A JP2008294208A JP2010123654A JP 2010123654 A JP2010123654 A JP 2010123654A JP 2008294208 A JP2008294208 A JP 2008294208A JP 2008294208 A JP2008294208 A JP 2008294208A JP 2010123654 A JP2010123654 A JP 2010123654A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 230000003287 optical effect Effects 0.000 title claims abstract description 67
- 229910000679 solder Inorganic materials 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000000919 ceramic Substances 0.000 claims abstract description 38
- 239000002904 solvent Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000009835 boiling Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- WYNVIVRXHYGNRT-UHFFFAOYSA-N octane-3,5-diol Chemical compound CCCC(O)CC(O)CC WYNVIVRXHYGNRT-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】主面上にダイパッドを有するパッケージ基板と、ダイパッドにはんだ接合された光半導体素子とを含む光半導体装置であり、パッケージ基板の基材には、セラミックスが使用される。ダイパッドには、複数の貫通孔が設けられており、貫通孔の各々は、基材のセラミックスが露出した側壁を有する。貫通孔の各々の開口径は、40μm以上100μm以下であり、且つ複数の貫通孔の開口面積の合計がダイパッドの面積の50%以下である。貫通孔の各々は、光半導体素子とダイパッドとの接合部が形成される側の上端部が、はんだ材によって塞がれている。
【選択図】図3
Description
20 セラミック基板
21 基材
22 ダイパッド
23 スルーホール
30 AuSnペースト
40 反射部材
50 光透過性樹脂
Claims (4)
- 主面上に金属からなるダイパッドを有するパッケージ基板と、前記ダイパッド上にはんだ材を介して接合された光半導体素子とを含む光半導体装置であって、
前記パッケージ基板の基材は、セラミックスであり、
前記パッケージ基板と前記ダイパッドとを貫通する複数の貫通孔が設けられており、
前記貫通孔の各々は、前記基材のセラミックスが露出した側壁を有していることを特徴とする光半導体装置。 - 前記貫通孔の各々は、前記光半導体素子と前記ダイパッドとの接合部が形成される側の上端部が、前記はんだ材によって塞がれていることを特徴とする請求項1に記載の光半導体装置。
- 前記貫通孔の各々の開口径は、40μm以上100μm以下であり、且つ前記複数の貫通孔の開口面積の合計が前記光半導体素子と前記ダイパッドとの接合領域の面積の50%以下であることを特徴とする光半導体装置。
- セラミックスからなるパッケージ基板の主面上に金属からなるダイパッドを形成する工程と、
前記ダイパッドと前記パッケージ基板とを貫通する複数の貫通孔を形成する工程と、
前記ダイパッド上にはんだ粉末と溶剤を含むはんだペーストを塗布する工程と、
前記ダイパッド上に前記はんだペーストを介して光半導体素子をリフロー処理によって接合する工程と、を含むことを特徴とする光半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008294208A JP5363789B2 (ja) | 2008-11-18 | 2008-11-18 | 光半導体装置 |
CN200910221863.0A CN101740709B (zh) | 2008-11-18 | 2009-11-18 | 光半导体装置及其制造方法 |
US12/621,035 US20100123162A1 (en) | 2008-11-18 | 2009-11-18 | Optical semiconductor apparatus and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008294208A JP5363789B2 (ja) | 2008-11-18 | 2008-11-18 | 光半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010123654A true JP2010123654A (ja) | 2010-06-03 |
JP5363789B2 JP5363789B2 (ja) | 2013-12-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008294208A Active JP5363789B2 (ja) | 2008-11-18 | 2008-11-18 | 光半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100123162A1 (ja) |
JP (1) | JP5363789B2 (ja) |
CN (1) | CN101740709B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013179103A (ja) * | 2012-02-28 | 2013-09-09 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JP2017220663A (ja) * | 2016-06-02 | 2017-12-14 | パナソニック株式会社 | 電子部品パッケージおよびその製造方法 |
JP2019208021A (ja) * | 2018-05-25 | 2019-12-05 | 日亜化学工業株式会社 | 発光モジュールの製造方法 |
Families Citing this family (13)
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KR100962706B1 (ko) * | 2009-11-27 | 2010-06-15 | 주식회사 테크엔 | 파워 led를 갖는 대형 조명등의 제조 방법 |
WO2011126135A1 (ja) | 2010-04-09 | 2011-10-13 | ローム株式会社 | Ledモジュール |
JP5847385B2 (ja) * | 2010-08-31 | 2016-01-20 | ミツミ電機株式会社 | 圧力センサ装置及び該装置を備える電子機器、並びに該装置の実装方法 |
CN102110683B (zh) * | 2010-09-10 | 2012-08-29 | 金木子 | 高电压垂直结构半导体发光二极管 |
CN102054914B (zh) * | 2010-11-09 | 2013-09-04 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法、发光装置 |
CN102054913B (zh) | 2010-11-09 | 2013-07-10 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法、发光装置 |
DE102011103412A1 (de) * | 2011-06-06 | 2012-12-06 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optolektronischen Halbleiterbauelements und derartiges Halbleiterbauelement |
TWI440228B (zh) * | 2011-09-29 | 2014-06-01 | Viking Tech Corp | Light emitting diode package structure and manufacturing method thereof |
TWI539872B (zh) * | 2013-01-09 | 2016-06-21 | 聯京光電股份有限公司 | 基板、半導體結構以及其相關製造方法 |
KR20140103513A (ko) * | 2013-02-18 | 2014-08-27 | 삼성전자주식회사 | 발광소자 패키지 |
JP6230520B2 (ja) * | 2014-10-29 | 2017-11-15 | キヤノン株式会社 | プリント回路板及び電子機器 |
WO2019167254A1 (ja) * | 2018-03-02 | 2019-09-06 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
CN109256373A (zh) * | 2018-09-29 | 2019-01-22 | 中国电子科技集团公司第四十三研究所 | I/f转换系统三维立体封装结构及封装方法 |
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2008
- 2008-11-18 JP JP2008294208A patent/JP5363789B2/ja active Active
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2009
- 2009-11-18 US US12/621,035 patent/US20100123162A1/en not_active Abandoned
- 2009-11-18 CN CN200910221863.0A patent/CN101740709B/zh active Active
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JP2003264267A (ja) * | 2002-03-08 | 2003-09-19 | Rohm Co Ltd | 半導体チップを使用した半導体装置 |
JP2004022566A (ja) * | 2002-06-12 | 2004-01-22 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
JP2005039177A (ja) * | 2003-06-24 | 2005-02-10 | Stanley Electric Co Ltd | 表面実装型半導体電子部品および製造方法 |
JP2005235886A (ja) * | 2004-02-18 | 2005-09-02 | Sanyo Electric Co Ltd | 回路装置 |
JP2006147723A (ja) * | 2004-11-17 | 2006-06-08 | Sharp Corp | 半導体素子用の電気回路基板 |
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JP2013179103A (ja) * | 2012-02-28 | 2013-09-09 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JP2017220663A (ja) * | 2016-06-02 | 2017-12-14 | パナソニック株式会社 | 電子部品パッケージおよびその製造方法 |
JP2019208021A (ja) * | 2018-05-25 | 2019-12-05 | 日亜化学工業株式会社 | 発光モジュールの製造方法 |
Also Published As
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JP5363789B2 (ja) | 2013-12-11 |
CN101740709A (zh) | 2010-06-16 |
CN101740709B (zh) | 2015-04-22 |
US20100123162A1 (en) | 2010-05-20 |
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