CN106663732A - 倒装芯片led封装 - Google Patents
倒装芯片led封装 Download PDFInfo
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- CN106663732A CN106663732A CN201580041809.1A CN201580041809A CN106663732A CN 106663732 A CN106663732 A CN 106663732A CN 201580041809 A CN201580041809 A CN 201580041809A CN 106663732 A CN106663732 A CN 106663732A
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/50—Wavelength conversion elements
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Abstract
一种倒装芯片发光二极管LED封装(200)包含LED裸片(220),所述LED裸片(220)具有第一衬底(221)、其间包含有源层(223)的p型区域(222)及n型区域(224)、所述p型区域上的金属触点(阳极触点)(226)及所述n型区域上的金属触点(阴极触点)(227)。封装衬底(240)或引线框架包含电介质材料(240a),所述电介质材料(240a)具有彼此间隔开且嵌入于所述电介质材料中的第一金属贯穿导通体(第一金属柱)(240b)及第二金属贯穿导通体(第二金属柱)(240c)。第一金属垫(241)位于所述第一金属柱的底部侧上,且第二金属垫(242)位于所述第二金属柱的底部侧上。互连金属膏或金属油墨残留物(金属残留物)位于所述阳极触点与第一金属柱之间及所述阴极触点与所述第二金属柱之间。
Description
技术领域
本发明涉及发光二极管(LED)倒装芯片装置。
背景技术
常规蓝紫外光(UV)或近UV LED形成于生长衬底上。在一个实例中,LED是基于GaN的LED,例如AlInGaN LED。通常,相对厚n型GaN层使用常规外延生长技术而生长于蓝宝石或SiC生长衬底上。相对厚GaN层通常包含低温成核层及一或多个额外层以为n型包覆层及有源层提供低缺陷晶格结构。一或多个n型包覆层然后形成于厚n型层上方,随后是有源层、一或多个p型包覆层及p型接触层(用于金属化)。
各种技术用于提供对LED的阳极及阴极的电接达。LED装置历史上封装于基于引线框架的线接合陶瓷结构中。在陶瓷芯片载体的形成中,通常通过众所周知的方法将引线框架接合到内建层陶瓷衬底,随后做出从固定到所述陶瓷衬底的LED裸片上的适当接合垫到引线框架的引线的连接。
按惯例使用线接合是出于其低成本,且使用陶瓷衬底是出于其相对于塑料的良好热耗散性质。对倒装芯片互连件的LED封装改变可为有帮助的,这是因为倒装芯片配置允许经改善热管理及穿过LED裸片的背侧(衬底)发射的经改善光强度。在已知倒装芯片LED实例中,蚀除p层及有源层的部分以暴露n层以用于金属化。以此方式,p触点与n触点位于LED裸片的同一侧上且可使用焊料凸块(例如Au/Sn凸块)直接电附接到封装(或子基台)的接触垫。然而,用于LED倒装芯片互连件的焊料凸块制作方法通常太昂贵而在工业中不实用。
发明内容
在所描述实例中,倒装芯片发光二极管(LED)封装包含LED裸片,所述LED裸片具有第一衬底、其间包含有源层的p型区域及n型区域、所述p型区域上的金属触点(阳极触点)及所述n型区域上的金属触点(阴极触点)。封装衬底或引线框架封装包含电介质材料,所述电介质材料具有彼此间隔开且嵌入于所述电介质材料中的第一金属贯穿导通体(第一金属柱)及第二金属贯穿导通体(第二金属柱)。第一金属垫位于所述第一金属柱的底部侧上,且第二金属垫位于所述第二金属柱的底部侧上。互连金属膏或金属油墨残留物(金属残留物)位于所述阳极触点与所述第一金属柱之间及所述阴极触点与所述第二金属柱之间。
附图说明
图1是根据实例性实施例的用于组装倒装芯片LED封装的实例性基于金属膏互连件的方法中的步骤的流程图。
图2是根据实例性实施例的实例性倒装芯片LED封装的横截面图。
图3是根据另一实例性实施例的包含内建层陶瓷封装衬底的实例性倒装芯片LED封装的横截面图。
具体实施方式
金属膏是指悬浮于称为助焊剂的载体介质中的金属系。金属油墨是指溶剂、金属粒子及分散剂。金属膏或金属油墨在常规回流工艺(在金属膏的情形中)期间或在常规烧结工艺(在金属油墨的情形中)期间在LED触点与封装衬底的金属柱或引线之间形成金属残留物互连件。
所述图式未必按比例绘制。所揭示倒装芯片LED封装使用金属互连膏,所述金属互连膏直接施加到封装衬底或引线框架以在不需要常规(例如,Au/Sn)凸块的情况下实现LED裸片的阳极及阴极触点到封装衬底或引线框架的接触垫的高可靠性LED裸片附接。虽然可使用各种不同封装衬底,但在一个实施例中,封装衬底可包含经设计以实现良好热耗散及低成本的有机衬底而非常规相对高成本陶瓷衬底。
图1是根据实例性实施例的用于组装倒装芯片LED封装的实例性基于金属膏互连件的方法100中的步骤的流程图。步骤101包含提供LED裸片,所述LED裸片包含第一衬底,所述第一衬底包含其间具有有源层的p型区域及n型区域、p型区域上的金属触点(阳极触点)及n型区域上的金属触点(阴极触点)。通常通过对具有数千个LED裸片的LED晶片进行晶片锯割而提供所述LED裸片。所述第一衬底在LED发射的波长范围内是光学透明的,且通常可包含例如A12O3(蓝宝石)、GaN(氮化镓)、SiC(碳化硅)或Si(硅)等材料。
步骤102包含将金属膏或金属油墨印刷于封装衬底或引线框架衬底的顶部表面上的第一接触垫及第二接触垫上,所述封装衬底或引线框架衬底包含电介质材料,所述电介质材料具有接触第一接触垫的第一金属贯穿导通体(柱)及接触第一接触垫的第二金属贯穿导通体(柱)。所述印刷可包含丝网印刷或喷墨印刷。
可使用的膏的实例包含工业中所使用的常见SAC合金(Sn、Ag、Cu)及例如由奥梅特(Ormet)公司及千住(Senju)公司提供的专用膏。助焊剂及其它有机组份辅助将金属系分配到所要区且帮助活化待接合在一起的表面。所选择的溶剂及助焊剂将通常活化任何Cu、Au、Ag或在金属垫上找到的其它金属面层。为了可印刷性,所使用的金属油墨通常包含溶剂(10wt.%到90wt.%)、金属粒子(0.5%到90%)、分散剂(0.1%到5%)及任选表面活性剂(0到5%)以及粘结剂(0到10%)。实例性油墨包含PVNanocell导电银油墨(150-TNG)、Intrisiq导电铜油墨及Cabot CCI-300导电银油墨。
为提供与油墨印刷于其上方的金属接触垫的低电阻接触,通常提供或执行以下各项中的一者:
(a)导电油墨具有溶解/蚀除铝/铜/金接触垫上的原生氧化物的组份,例如包含磷酸、氢氟酸或醋酸的酸、例如氢氧化铵的碱或者例如过氧化氢的氧化剂。
(b)恰好在印刷导电油墨以用于互连件之前使用等离子体(例如Ar、CHF3或O2或者其组合)执行对金属接触垫的等离子体步骤。为此,可使油墨印刷机配备有在印刷之前的时间在导电材料印刷头前面通过的大气等离子体印刷头。
(c)执行高温或激光/氙快速固化,此可使金属油墨扩散穿过金属柱上的薄原生氧化物层。
一种特定金属膏具有允许低回流温度且(在回流之后)在后续较高温度回流循环下维持完整性的Cu对焊料比率。典型材料确实具有Cu-SAC(Sn、Pb、Cu),但Cu处于低得多的比率(0.5%到0.6%)。区别是用于接合的合金(a)能够进行低温回流,(b)由于所使用的金属的比率而在后续较高温度下稳定,(c)由于使用可广泛获得的金属系(Cu及焊料)而具有低成本,且(d)允许仅经由膏(不需要LED裸片上的凸块)而从LED裸片互连到衬底。
封装衬底可包含柔性的有机衬底(例如聚酰亚胺、聚酯)或常规基于环氧玻璃树脂的材料(例如基于BT树脂),所述树脂为具有两种主要组份(B(双马来酰亚胺(Bismaleimide))及T(三嗪(Triazine)树脂))的额外聚合类型的高耐热热固树脂。其它实例性有机衬底包含FR4(玻璃加强环氧层压片)或聚(对苯二甲酸乙二醇酯)(PET)型材料。或者,封装衬底可包含刚性材料(例如陶瓷)或印刷电路板(PCB)的衬底。一种刚性封装衬底布置为提供电极的内建层陶瓷衬底(参见下文所描述的图3)。
金属膏可包含通过向金属粒子添加热固树脂(例如环氧树脂、酚树脂或聚苯硫醚(PPS))而获得的有机导电膏。热固树脂可为在环境温度下为液体但在加热时固化的高分子重量物质。如此,热固树脂可包含酚树脂、丙烯酸树脂、环氧树脂、聚酯树脂及二甲苯树脂,仅举几个实例。当树脂组份仅为热固树脂时,热固树脂通常在相对于金属15比5wt.%的范围中使用。金属粒子可包含铜、铂、铂金、铂铱或其它难熔金属、金属合金膏、银、银钯、金、金钯或其混合物、钨、钨钼、铌或其它难熔金属系。金属膏可包含用于改善到衬底的粘合的粘合改善剂,例如标准玻璃组份(例如PbO、B2O3、ZnO、CaO、SiO2及Al2O3)中的一者或组合。在一个特定实施例中,金属膏包含铜且不含Pb。
所述方法可进一步将焊料可润湿金属面层沉积于阳极触点上及阴极触点上。所述方法还可进一步包含在下文所描述的倒装芯片LED裸片放置步骤(步骤103)之前对LED裸片进行磷光体涂覆。举例来说,可将磷光体选择为从蓝色LED产生红色、黄色、黄绿色(例如,使用YAG磷光体)或绿色光且经成形以保形地涂覆LED裸片的材料。取决于磷光体材料,可获得420nm到650nm范围(蓝色到红色)。一个实例性应用使用在蓝色范围(500nm以下)中的磷光体材料。通常适合磷光体沉积技术是电泳沉积(EPD)。所述方法还可包含在步骤103之前对LED裸片的边缘进行激光或机械倒角以通过打乱晶体晶格而实现经改善光性能。
步骤103包含对LED裸片进行倒装芯片放置,使得其阳极触点位于第一接触垫上且其阴极触点位于第二接触垫上。针对步骤103可(例如)利用来自新川(Shinkawa)公司或百仕盾(Bestem)公司的取放设备使用取放技术。步骤104包含使金属膏回流或固化金属油墨以形成金属残留物。回流或固化可在低温(例如210℃到220℃或更低)下执行以便不损坏可位于LED裸片上的磷光体涂层。所述方法可进一步包含步骤105,步骤105包含在回流或固化之后将透镜放置于LED裸片上(参见下文所描述的图3中的透镜339)。在一个特定实施例中,透镜可包含硅酮。
图2是根据实例性实施例的包含LED裸片220的实例性倒装芯片LED封装200的横截面图,LED裸片220通过互连膏或油墨残留物(金属残留物)230互连到封装衬底240,封装衬底240可包含有机衬底、陶瓷或印刷电路板(PCB)衬底。所述封装衬底通常为60μm到200μm厚,且LED封装200的总厚度通常小于400μm。
LED裸片包含第一衬底221、其间具有有源层223的p型区域222及n型区域224。有源层223可包含多量子阱(MQW)。一金属触点位于p型区域222上,展示为阳极触点226,且一金属触点位于n型区域224上,展示为阴极触点227。展示位于阳极触点226上及阴极触点227上的通常为焊料可润湿金属面层(例如,Au/Sn)的金属面层235。磷光体层249展示为位于第一衬底221的顶部上。
封装衬底240包含电介质材料240a,电介质材料240a具有彼此间隔开且嵌入于电介质材料240a中的第一金属贯穿导通体(第一金属柱)240b及第二金属贯穿导通体(第二金属柱)240c。第一金属垫241位于第一金属柱240b的底部侧上,且第二金属垫242位于第二金属柱240c的底部侧上。
金属残留物230位于阳极触点226与第一金属柱240b之间及阴极触点227与第二金属柱240c之间。在一个实施例中,可包含阻焊剂/焊料掩模的电介质层246横向于金属残留物230,位于电介质材料240a及第一金属柱240b上以及电介质材料240a及第二金属柱240c上,但不位于金属残留物230之间。焊料掩模层(任选的)用于防止膏或油墨流动。
倒装芯片LED封装200因此不包含底填充物。不需要底填充物,因为LED固有地,裸片上的接合垫相对较大且在衬底上甚至更大。使材料回流(或固化),从而形成非常大的互连(接合)区。此大的区允许通常在较小、较紧凑间距的基于Si的装置中不可获得的接点的机械强度。另外,可选择的材料具有低模数以吸收由于热膨胀系数(CTE)不匹配导致的接点上的应力。在Cu膏的情形中,膏材料的Cu部分使此不匹配尽可能小,从而进一步减小接点上的应力。阳极触点226、阴极触点227、金属残留物230、第一金属柱240b、第二金属柱240c、第一金属垫241及第二金属垫242可全部为非圆形横截面形状(例如矩形形状或其它形状)以最大化接触面积。
图2中所展示的封装衬底240可由使用将LED裸片附接到引线框架的相关引线框架上倒装芯片方法的引线框架封装代替,所述引线框架封装包含有引线或无引线封装(例如,四面扁平无引线(QFN))。在所述情形中,LED裸片的阳极及阴极触点通过所揭示金属残留物直接连接到引线框架的相应引线指形件(引线)。
图3是根据另一实例性实施例的包含内建层陶瓷衬底(陶瓷衬底)320的实例性倒装芯片LED封装300的横截面图。陶瓷衬底320包含各自展示为包含子部分的衬底部分321及322。衬底320包含:电极3231,其位于衬底部分321与322之间,沿着衬底部分321的侧壁延伸到衬底部分321的底部表面,还在衬底部分321的顶部侧上延伸以接触LED裸片220的阴极触点227;及电极3232,其位于衬底部分321与322之间,沿着衬底部分321的侧壁延伸到衬底部分321的底部表面,还在衬底部分321的顶部侧上延伸以接触LED裸片220的阳极触点227。透镜339展示为位于磷光体层249上,磷光体层249位于LED裸片220的顶部表面上。
实例性实施例的优点包含对包含LED在内的多种半导体装置(例如具有用于热/电传输的大的接合垫的功率装置)的适用性,但由于下文所描述的数种原因而对LED特别有益。实例性实施例利用存在于常规LED裸片上的大的裸片垫(2垫阳极/阴极配置),其允许用于接点形成的大的区且提供来自消除对底填充物的需要的低温裸片附接的低应力。低温裸片附接允许预涂覆磷光体层(在LED裸片上方)保持完整。在第一回流(裸片附接)之后存在高温稳定性,这在第二级回流(金属膏烧结或油墨固化)之后实行接点完整性。任选低成本(有机)衬底由于形成具有Cu(高度导热)的大的导通体的能力而提供优越热管理。所述方法可使用用于丝网印刷金属膏、LED裸片放置及回流的低成本组装成套设备。实例性实施例还可与用于LED裸片的各种后段工艺(包含磷光体涂覆、透镜放置于LED裸片上及条带组装)共存。
实例性实施例可集成到各种组装流程中以形成超出如上文所描述的LED封装外的各种不同光电子装置或形成通常用于具有大的接合垫的任何半导体装置(例如功率半导体装置)的半导体电子封装装置。组合件可包含单个半导体裸片或多个半导体裸片,例如包含多个堆叠半导体裸片的PoP配置。可使用各种封装衬底。
修改在所描述实施例中为可能的,且其它实施例在权利要求书的范围内为可能的。
Claims (20)
1.一种倒装芯片发光二极管LED封装,其包括:
LED裸片,其包含第一衬底、其间具有有源层的p型区域及n型区域、所述p型区域上的金属触点(阳极触点)及所述n型区域上的金属触点(阴极触点);
封装衬底或引线框架封装,其包含电介质材料,所述电介质材料具有彼此间隔开且嵌入于所述电介质材料中的第一金属贯穿导通体(第一金属柱)及第二金属贯穿导通体(第二金属柱);
位于所述第一金属柱的底部侧上的第一金属垫及位于所述第二金属柱的底部侧上的第二金属垫,及
包含金属(金属残留物)的互连膏或油墨残留物,其位于所述阳极触点与所述第一金属柱之间及所述阴极触点与所述第二金属柱之间。
2.根据权利要求1所述的倒装芯片LED封装,其中所述第一衬底包含蓝宝石或GaN、SiC(碳化硅)或者Si(硅)。
3.根据权利要求1所述的倒装芯片LED封装,其进一步包括位于所述LED裸片上方的磷光体层。
4.根据权利要求1所述的倒装芯片LED封装,其中所述封装衬底包含有机衬底。
5.根据权利要求1所述的倒装芯片LED封装,其中所述LED裸片的边缘是经倒角的。
6.根据权利要求1所述的倒装芯片LED封装,其进一步包括位于所述阳极触点上及所述阴极触点上的焊料可润湿金属面层。
7.根据权利要求1所述的倒装芯片LED封装,其中所述倒装芯片LED封装不包含底填充物。
8.根据权利要求1所述的倒装芯片LED封装,其中所述金属残留物包含铜且不含Pb。
9.根据权利要求1所述的倒装芯片LED封装,其中所述第一金属柱及所述第二金属柱两者均具有非圆形横截面形状。
10.一种组装倒装芯片发光二极管LED封装的方法,所述方法包括:
将金属膏或金属油墨印刷于封装衬底的顶部表面上的第一及第二接触垫上,所述封装衬底包含电介质材料,所述电介质材料具有接触所述第一接触垫的第一金属贯穿导通体(柱)及接触所述第一接触垫的第二柱;
对LED裸片进行倒装芯片放置,所述LED裸片包含第一衬底,所述第一衬底包含其间具有有源层的p型区域及n型区域、所述第一接触垫上的所述p型区域上的金属触点(阳极触点)及所述第二接触垫上的所述n型区域上的金属触点(阴极触点),及
使所述金属膏回流或固化所述金属油墨以形成金属残留物。
11.根据权利要求10所述的方法,其进一步包括在所述倒装芯片放置之前对所述LED裸片进行磷光体涂覆。
12.根据权利要求10所述的方法,其进一步包括在所述回流或所述固化之后将透镜放置于所述LED裸片上。
13.根据权利要求10所述的方法,其中所述封装衬底包含有机衬底。
14.根据权利要求10所述的方法,其中所述封装衬底包含印刷电路板PCB或内建层陶瓷衬底。
15.根据权利要求10所述的方法,其中所述第一衬底包含蓝宝石或GaN。
16.根据权利要求10所述的方法,其进一步包括在所述倒装芯片放置之前对所述LED裸片的边缘进行激光或机械倒角。
17.根据权利要求10所述的方法,其进一步包括将焊料可润湿金属面层沉积于所述阳极触点上及所述阴极触点上。
18.根据权利要求10所述的方法,其中所述印刷包含丝网印刷。
19.一种倒装芯片发光二极管LED封装,其包括:
LED裸片,其包含第一衬底、其间具有有源层的p型区域及n型区域、所述p型区域上的金属触点(阳极触点)及所述n型区域上的金属触点(阴极触点);
磷光体层,其位于所述LED裸片上方;
封装衬底,其包含有机电介质材料(有机材料),所述有机电介质材料(有机材料)具有彼此间隔开且嵌入于所述有机材料中的第一金属贯穿导通体(第一金属柱)及第二金属贯穿导通体(第二金属柱);
位于所述第一金属柱的底部侧上的第一金属垫及位于所述第二金属柱的底部侧上的第二金属垫,及
互连金属膏或金属油墨残留物(金属残留物),其位于所述阳极触点与所述第一金属柱之间及所述阴极触点与所述第二金属柱之间。
20.根据权利要求19所述的倒装芯片LED封装,其中所述第一衬底包含蓝宝石。
Applications Claiming Priority (5)
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US201462041702P | 2014-08-26 | 2014-08-26 | |
US62/041,702 | 2014-08-26 | ||
US14/818,969 US20160064630A1 (en) | 2014-08-26 | 2015-08-05 | Flip chip led package |
US14/818,969 | 2015-08-05 | ||
PCT/US2015/047019 WO2016033229A1 (en) | 2014-08-26 | 2015-08-26 | Flip chip led package |
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CN106663732A true CN106663732A (zh) | 2017-05-10 |
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CN201580041809.1A Pending CN106663732A (zh) | 2014-08-26 | 2015-08-26 | 倒装芯片led封装 |
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US (1) | US20160064630A1 (zh) |
EP (1) | EP3186840A4 (zh) |
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US10600755B2 (en) * | 2017-08-10 | 2020-03-24 | Amkor Technology, Inc. | Method of manufacturing an electronic device and electronic device manufactured thereby |
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Also Published As
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EP3186840A4 (en) | 2018-04-25 |
WO2016033229A1 (en) | 2016-03-03 |
EP3186840A1 (en) | 2017-07-05 |
US20160064630A1 (en) | 2016-03-03 |
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