JP2009541999A5 - - Google Patents
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- Publication number
- JP2009541999A5 JP2009541999A5 JP2009516566A JP2009516566A JP2009541999A5 JP 2009541999 A5 JP2009541999 A5 JP 2009541999A5 JP 2009516566 A JP2009516566 A JP 2009516566A JP 2009516566 A JP2009516566 A JP 2009516566A JP 2009541999 A5 JP2009541999 A5 JP 2009541999A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- floating gate
- disposing
- intergate dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/471,772 | 2006-06-21 | ||
| US11/471,772 US7977190B2 (en) | 2006-06-21 | 2006-06-21 | Memory devices having reduced interference between floating gates and methods of fabricating such devices |
| PCT/US2007/014431 WO2007149515A2 (en) | 2006-06-21 | 2007-06-20 | Floating gate memory devices and fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009541999A JP2009541999A (ja) | 2009-11-26 |
| JP2009541999A5 true JP2009541999A5 (enExample) | 2010-04-30 |
| JP5801030B2 JP5801030B2 (ja) | 2015-10-28 |
Family
ID=38669533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009516566A Active JP5801030B2 (ja) | 2006-06-21 | 2007-06-20 | 浮遊ゲートメモリデバイスと製造 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7977190B2 (enExample) |
| EP (1) | EP2036122A2 (enExample) |
| JP (1) | JP5801030B2 (enExample) |
| KR (1) | KR101350632B1 (enExample) |
| CN (1) | CN101473429B (enExample) |
| WO (1) | WO2007149515A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7763933B2 (en) * | 2007-02-15 | 2010-07-27 | Micron Technology, Inc. | Transistor constructions and processing methods |
| US7948021B2 (en) | 2007-04-27 | 2011-05-24 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of fabricating the same |
| US20080273410A1 (en) * | 2007-05-04 | 2008-11-06 | Jaydeb Goswami | Tungsten digitlines |
| JP4594973B2 (ja) | 2007-09-26 | 2010-12-08 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US8750040B2 (en) | 2011-01-21 | 2014-06-10 | Micron Technology, Inc. | Memory devices having source lines directly coupled to body regions and methods |
| CN102184869B (zh) * | 2011-04-28 | 2015-07-08 | 上海华虹宏力半导体制造有限公司 | Mos晶体管隔离区制造方法及mos晶体管 |
| CN105304549A (zh) * | 2014-07-29 | 2016-02-03 | 盛美半导体设备（上海）有限公司 | 浅沟槽隔离结构的形成方法 |
| EP3371812B1 (en) * | 2015-11-03 | 2021-05-19 | Silicon Storage Technology, Inc. | Integration of metal floating gate in non-volatile memory |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6781895B1 (en) * | 1991-12-19 | 2004-08-24 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
| JP3469362B2 (ja) * | 1994-08-31 | 2003-11-25 | 株式会社東芝 | 半導体記憶装置 |
| US5622881A (en) * | 1994-10-06 | 1997-04-22 | International Business Machines Corporation | Packing density for flash memories |
| JP3583579B2 (ja) | 1997-06-06 | 2004-11-04 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
| JP4237344B2 (ja) * | 1998-09-29 | 2009-03-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US6228713B1 (en) * | 1999-06-28 | 2001-05-08 | Chartered Semiconductor Manufacturing Ltd. | Self-aligned floating gate for memory application using shallow trench isolation |
| US6461915B1 (en) * | 1999-09-01 | 2002-10-08 | Micron Technology, Inc. | Method and structure for an improved floating gate memory cell |
| JP2002076272A (ja) * | 2000-08-23 | 2002-03-15 | Sony Corp | 半導体装置の製造方法 |
| JP3984020B2 (ja) * | 2000-10-30 | 2007-09-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US6656852B2 (en) * | 2001-12-06 | 2003-12-02 | Texas Instruments Incorporated | Method for the selective removal of high-k dielectrics |
| US6795326B2 (en) * | 2001-12-12 | 2004-09-21 | Micron Technology, Inc. | Flash array implementation with local and global bit lines |
| KR100462175B1 (ko) * | 2002-02-08 | 2004-12-16 | 삼성전자주식회사 | 부유게이트를 갖는 비휘발성 메모리 소자의 셀 및 그제조방법 |
| KR100537277B1 (ko) * | 2002-11-27 | 2005-12-19 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| KR100501464B1 (ko) | 2003-02-04 | 2005-07-18 | 동부아남반도체 주식회사 | 비휘발성 메모리 장치 제조 방법 |
| JP4237561B2 (ja) | 2003-07-04 | 2009-03-11 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| JP3923926B2 (ja) * | 2003-07-04 | 2007-06-06 | 株式会社東芝 | 半導体記憶装置 |
| JP3998622B2 (ja) | 2003-09-30 | 2007-10-31 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
| US6982905B2 (en) * | 2003-10-09 | 2006-01-03 | Micron Technology, Inc. | Method and apparatus for reading NAND flash memory array |
| US6996004B1 (en) * | 2003-11-04 | 2006-02-07 | Advanced Micro Devices, Inc. | Minimization of FG-FG coupling in flash memory |
| KR20050048114A (ko) | 2003-11-19 | 2005-05-24 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조 방법 |
| US7045419B2 (en) * | 2003-12-12 | 2006-05-16 | Macronix International Co., Ltd. | Elimination of the fast-erase phenomena in flash memory |
| JP2005209931A (ja) * | 2004-01-23 | 2005-08-04 | Renesas Technology Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US6951790B1 (en) * | 2004-03-24 | 2005-10-04 | Micron Technology, Inc. | Method of forming select lines for NAND memory devices |
| US7332408B2 (en) * | 2004-06-28 | 2008-02-19 | Micron Technology, Inc. | Isolation trenches for memory devices |
| JP2007096151A (ja) * | 2005-09-30 | 2007-04-12 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
-
2006
- 2006-06-21 US US11/471,772 patent/US7977190B2/en active Active
-
2007
- 2007-06-20 EP EP07809749A patent/EP2036122A2/en not_active Ceased
- 2007-06-20 CN CN200780022954.0A patent/CN101473429B/zh active Active
- 2007-06-20 WO PCT/US2007/014431 patent/WO2007149515A2/en not_active Ceased
- 2007-06-20 KR KR1020097001240A patent/KR101350632B1/ko active Active
- 2007-06-20 JP JP2009516566A patent/JP5801030B2/ja active Active
-
2011
- 2011-07-11 US US13/180,361 patent/US8441058B2/en active Active
-
2013
- 2013-04-19 US US13/866,698 patent/US9018059B2/en active Active
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