JP2011040733A5 - - Google Patents

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Publication number
JP2011040733A5
JP2011040733A5 JP2010161201A JP2010161201A JP2011040733A5 JP 2011040733 A5 JP2011040733 A5 JP 2011040733A5 JP 2010161201 A JP2010161201 A JP 2010161201A JP 2010161201 A JP2010161201 A JP 2010161201A JP 2011040733 A5 JP2011040733 A5 JP 2011040733A5
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JP
Japan
Prior art keywords
floating gate
layer
dielectric layer
sti structure
manufacturing
Prior art date
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Application number
JP2010161201A
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English (en)
Japanese (ja)
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JP5603688B2 (ja
JP2011040733A (ja
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Publication date
Priority claimed from EP09167749A external-priority patent/EP2284870B1/en
Application filed filed Critical
Publication of JP2011040733A publication Critical patent/JP2011040733A/ja
Publication of JP2011040733A5 publication Critical patent/JP2011040733A5/ja
Application granted granted Critical
Publication of JP5603688B2 publication Critical patent/JP5603688B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010161201A 2009-08-12 2010-07-16 不揮発性メモリセルのフローティングゲート形成方法 Expired - Fee Related JP5603688B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09167749.2 2009-08-12
EP09167749A EP2284870B1 (en) 2009-08-12 2009-08-12 Method for forming a floating gate non-volatile memory cell

Publications (3)

Publication Number Publication Date
JP2011040733A JP2011040733A (ja) 2011-02-24
JP2011040733A5 true JP2011040733A5 (enExample) 2013-03-07
JP5603688B2 JP5603688B2 (ja) 2014-10-08

Family

ID=41279393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010161201A Expired - Fee Related JP5603688B2 (ja) 2009-08-12 2010-07-16 不揮発性メモリセルのフローティングゲート形成方法

Country Status (4)

Country Link
US (1) US8263459B2 (enExample)
EP (1) EP2284870B1 (enExample)
JP (1) JP5603688B2 (enExample)
AT (1) ATE546829T1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8686492B2 (en) * 2010-03-11 2014-04-01 Spansion Llc Non-volatile FINFET memory device and manufacturing method thereof
JP5646416B2 (ja) * 2011-09-01 2014-12-24 株式会社東芝 半導体装置の製造方法
US8963257B2 (en) * 2011-11-10 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistors and methods for fabricating the same
US9117690B2 (en) * 2011-12-02 2015-08-25 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
CN102544074B (zh) * 2012-02-21 2013-12-18 无锡来燕微电子有限公司 与cmos逻辑工艺兼容的非挥发性记忆体及其制备方法
TWI473211B (zh) * 2012-10-19 2015-02-11 Inotera Memories Inc 記憶體裝置及其節點製造方法
CN104051346B (zh) * 2013-03-11 2018-01-30 中芯国际集成电路制造(上海)有限公司 一种闪存存储器的制备方法
CN104157615B (zh) * 2013-05-15 2017-03-22 中芯国际集成电路制造(上海)有限公司 闪存存储器的制备方法
EP2806452B1 (en) * 2013-05-24 2018-12-26 IMEC vzw Non-volatile memory semiconductor devices and method for making thereof
CN104934428A (zh) * 2014-03-19 2015-09-23 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法
US10297448B2 (en) * 2015-11-30 2019-05-21 International Business Machines Corporation SiGe fins formed on a substrate
US10163914B2 (en) 2017-03-08 2018-12-25 Globalfoundries Inc. Method of reducing fin width in FinFET SRAM array to mitigate low voltage strap bit fails

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1605517B1 (en) 2001-04-27 2011-09-14 Imec Insulating barrier
US7687860B2 (en) * 2005-06-24 2010-03-30 Samsung Electronics Co., Ltd. Semiconductor device including impurity regions having different cross-sectional shapes
EP1748472A1 (en) 2005-07-28 2007-01-31 Interuniversitair Microelektronica Centrum Vzw Non-volatile memory transistor
EP1903602A3 (en) 2005-07-28 2009-04-01 Interuniversitair Microelektronica Centrum Vzw Non-volatile memory transistor
US7667260B2 (en) * 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
US20080074920A1 (en) 2006-09-21 2008-03-27 Henry Chien Nonvolatile Memory with Reduced Coupling Between Floating Gates
JP5438300B2 (ja) * 2007-11-28 2014-03-12 シャープ株式会社 不揮発性半導体記憶装置の製造方法
KR100972862B1 (ko) * 2008-04-07 2010-07-28 주식회사 하이닉스반도체 불휘발성 메모리 소자의 형성방법

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