ATE546829T1 - Verfahren zur herstellung einer nichtflüchtigen floating-gate-speicherzelle - Google Patents

Verfahren zur herstellung einer nichtflüchtigen floating-gate-speicherzelle

Info

Publication number
ATE546829T1
ATE546829T1 AT09167749T AT09167749T ATE546829T1 AT E546829 T1 ATE546829 T1 AT E546829T1 AT 09167749 T AT09167749 T AT 09167749T AT 09167749 T AT09167749 T AT 09167749T AT E546829 T1 ATE546829 T1 AT E546829T1
Authority
AT
Austria
Prior art keywords
floating gate
memory cells
producing
memory cell
gate memory
Prior art date
Application number
AT09167749T
Other languages
German (de)
English (en)
Inventor
Pieter Blomme
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of ATE546829T1 publication Critical patent/ATE546829T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT09167749T 2009-08-12 2009-08-12 Verfahren zur herstellung einer nichtflüchtigen floating-gate-speicherzelle ATE546829T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09167749A EP2284870B1 (en) 2009-08-12 2009-08-12 Method for forming a floating gate non-volatile memory cell

Publications (1)

Publication Number Publication Date
ATE546829T1 true ATE546829T1 (de) 2012-03-15

Family

ID=41279393

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09167749T ATE546829T1 (de) 2009-08-12 2009-08-12 Verfahren zur herstellung einer nichtflüchtigen floating-gate-speicherzelle

Country Status (4)

Country Link
US (1) US8263459B2 (enExample)
EP (1) EP2284870B1 (enExample)
JP (1) JP5603688B2 (enExample)
AT (1) ATE546829T1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8686492B2 (en) * 2010-03-11 2014-04-01 Spansion Llc Non-volatile FINFET memory device and manufacturing method thereof
JP5646416B2 (ja) * 2011-09-01 2014-12-24 株式会社東芝 半導体装置の製造方法
US8963257B2 (en) * 2011-11-10 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistors and methods for fabricating the same
US9117690B2 (en) * 2011-12-02 2015-08-25 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
CN102544074B (zh) * 2012-02-21 2013-12-18 无锡来燕微电子有限公司 与cmos逻辑工艺兼容的非挥发性记忆体及其制备方法
TWI473211B (zh) * 2012-10-19 2015-02-11 Inotera Memories Inc 記憶體裝置及其節點製造方法
CN104051346B (zh) * 2013-03-11 2018-01-30 中芯国际集成电路制造(上海)有限公司 一种闪存存储器的制备方法
CN104157615B (zh) * 2013-05-15 2017-03-22 中芯国际集成电路制造(上海)有限公司 闪存存储器的制备方法
EP2806452B1 (en) * 2013-05-24 2018-12-26 IMEC vzw Non-volatile memory semiconductor devices and method for making thereof
CN104934428A (zh) * 2014-03-19 2015-09-23 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法
US10297448B2 (en) * 2015-11-30 2019-05-21 International Business Machines Corporation SiGe fins formed on a substrate
US10163914B2 (en) 2017-03-08 2018-12-25 Globalfoundries Inc. Method of reducing fin width in FinFET SRAM array to mitigate low voltage strap bit fails

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1605517B1 (en) 2001-04-27 2011-09-14 Imec Insulating barrier
US7687860B2 (en) * 2005-06-24 2010-03-30 Samsung Electronics Co., Ltd. Semiconductor device including impurity regions having different cross-sectional shapes
EP1748472A1 (en) 2005-07-28 2007-01-31 Interuniversitair Microelektronica Centrum Vzw Non-volatile memory transistor
EP1903602A3 (en) 2005-07-28 2009-04-01 Interuniversitair Microelektronica Centrum Vzw Non-volatile memory transistor
US7667260B2 (en) * 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
US20080074920A1 (en) 2006-09-21 2008-03-27 Henry Chien Nonvolatile Memory with Reduced Coupling Between Floating Gates
JP5438300B2 (ja) * 2007-11-28 2014-03-12 シャープ株式会社 不揮発性半導体記憶装置の製造方法
KR100972862B1 (ko) * 2008-04-07 2010-07-28 주식회사 하이닉스반도체 불휘발성 메모리 소자의 형성방법

Also Published As

Publication number Publication date
JP5603688B2 (ja) 2014-10-08
US20110039380A1 (en) 2011-02-17
JP2011040733A (ja) 2011-02-24
EP2284870A1 (en) 2011-02-16
US8263459B2 (en) 2012-09-11
EP2284870B1 (en) 2012-02-22

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