JP5603688B2 - 不揮発性メモリセルのフローティングゲート形成方法 - Google Patents

不揮発性メモリセルのフローティングゲート形成方法 Download PDF

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Publication number
JP5603688B2
JP5603688B2 JP2010161201A JP2010161201A JP5603688B2 JP 5603688 B2 JP5603688 B2 JP 5603688B2 JP 2010161201 A JP2010161201 A JP 2010161201A JP 2010161201 A JP2010161201 A JP 2010161201A JP 5603688 B2 JP5603688 B2 JP 5603688B2
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Prior art keywords
floating gate
layer
height
oxidation
oxide
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Expired - Fee Related
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JP2010161201A
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Japanese (ja)
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JP2011040733A (ja
JP2011040733A5 (enExample
Inventor
ピーテル・ブロンメ
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2010161201A 2009-08-12 2010-07-16 不揮発性メモリセルのフローティングゲート形成方法 Expired - Fee Related JP5603688B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09167749.2 2009-08-12
EP09167749A EP2284870B1 (en) 2009-08-12 2009-08-12 Method for forming a floating gate non-volatile memory cell

Publications (3)

Publication Number Publication Date
JP2011040733A JP2011040733A (ja) 2011-02-24
JP2011040733A5 JP2011040733A5 (enExample) 2013-03-07
JP5603688B2 true JP5603688B2 (ja) 2014-10-08

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ID=41279393

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JP2010161201A Expired - Fee Related JP5603688B2 (ja) 2009-08-12 2010-07-16 不揮発性メモリセルのフローティングゲート形成方法

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Country Link
US (1) US8263459B2 (enExample)
EP (1) EP2284870B1 (enExample)
JP (1) JP5603688B2 (enExample)
AT (1) ATE546829T1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8686492B2 (en) * 2010-03-11 2014-04-01 Spansion Llc Non-volatile FINFET memory device and manufacturing method thereof
JP5646416B2 (ja) * 2011-09-01 2014-12-24 株式会社東芝 半導体装置の製造方法
US8963257B2 (en) * 2011-11-10 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistors and methods for fabricating the same
US9117690B2 (en) * 2011-12-02 2015-08-25 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
CN102544074B (zh) * 2012-02-21 2013-12-18 无锡来燕微电子有限公司 与cmos逻辑工艺兼容的非挥发性记忆体及其制备方法
TWI473211B (zh) * 2012-10-19 2015-02-11 Inotera Memories Inc 記憶體裝置及其節點製造方法
CN104051346B (zh) * 2013-03-11 2018-01-30 中芯国际集成电路制造(上海)有限公司 一种闪存存储器的制备方法
CN104157615B (zh) * 2013-05-15 2017-03-22 中芯国际集成电路制造(上海)有限公司 闪存存储器的制备方法
EP2806452B1 (en) * 2013-05-24 2018-12-26 IMEC vzw Non-volatile memory semiconductor devices and method for making thereof
CN104934428A (zh) * 2014-03-19 2015-09-23 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法
US10297448B2 (en) * 2015-11-30 2019-05-21 International Business Machines Corporation SiGe fins formed on a substrate
US10163914B2 (en) 2017-03-08 2018-12-25 Globalfoundries Inc. Method of reducing fin width in FinFET SRAM array to mitigate low voltage strap bit fails

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1605517B1 (en) 2001-04-27 2011-09-14 Imec Insulating barrier
US7687860B2 (en) * 2005-06-24 2010-03-30 Samsung Electronics Co., Ltd. Semiconductor device including impurity regions having different cross-sectional shapes
EP1748472A1 (en) 2005-07-28 2007-01-31 Interuniversitair Microelektronica Centrum Vzw Non-volatile memory transistor
EP1903602A3 (en) 2005-07-28 2009-04-01 Interuniversitair Microelektronica Centrum Vzw Non-volatile memory transistor
US7667260B2 (en) * 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
US20080074920A1 (en) 2006-09-21 2008-03-27 Henry Chien Nonvolatile Memory with Reduced Coupling Between Floating Gates
JP5438300B2 (ja) * 2007-11-28 2014-03-12 シャープ株式会社 不揮発性半導体記憶装置の製造方法
KR100972862B1 (ko) * 2008-04-07 2010-07-28 주식회사 하이닉스반도체 불휘발성 메모리 소자의 형성방법

Also Published As

Publication number Publication date
ATE546829T1 (de) 2012-03-15
US20110039380A1 (en) 2011-02-17
JP2011040733A (ja) 2011-02-24
EP2284870A1 (en) 2011-02-16
US8263459B2 (en) 2012-09-11
EP2284870B1 (en) 2012-02-22

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