JP2009540536A5 - - Google Patents

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Publication number
JP2009540536A5
JP2009540536A5 JP2009515608A JP2009515608A JP2009540536A5 JP 2009540536 A5 JP2009540536 A5 JP 2009540536A5 JP 2009515608 A JP2009515608 A JP 2009515608A JP 2009515608 A JP2009515608 A JP 2009515608A JP 2009540536 A5 JP2009540536 A5 JP 2009540536A5
Authority
JP
Japan
Prior art keywords
valve
closure member
temperature
top closure
evaporator unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2009515608A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009540536A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2007/071016 external-priority patent/WO2007149738A2/en
Publication of JP2009540536A publication Critical patent/JP2009540536A/ja
Publication of JP2009540536A5 publication Critical patent/JP2009540536A5/ja
Ceased legal-status Critical Current

Links

JP2009515608A 2006-06-12 2007-06-12 蒸発装置 Ceased JP2009540536A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80455506P 2006-06-12 2006-06-12
US86063106P 2006-11-22 2006-11-22
PCT/US2007/071016 WO2007149738A2 (en) 2006-06-12 2007-06-12 Vaporizer

Publications (2)

Publication Number Publication Date
JP2009540536A JP2009540536A (ja) 2009-11-19
JP2009540536A5 true JP2009540536A5 (enExample) 2013-06-06

Family

ID=38832757

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2009515591A Ceased JP2009540533A (ja) 2006-06-12 2007-06-11 蒸発装置
JP2009515608A Ceased JP2009540536A (ja) 2006-06-12 2007-06-12 蒸発装置
JP2009515606A Expired - Fee Related JP5421100B2 (ja) 2006-06-12 2007-06-12 イオン源および蒸発装置とともに用いられる蒸気運搬システム

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2009515591A Ceased JP2009540533A (ja) 2006-06-12 2007-06-11 蒸発装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009515606A Expired - Fee Related JP5421100B2 (ja) 2006-06-12 2007-06-12 イオン源および蒸発装置とともに用いられる蒸気運搬システム

Country Status (7)

Country Link
US (2) US8110815B2 (enExample)
EP (3) EP2026889A4 (enExample)
JP (3) JP2009540533A (enExample)
KR (3) KR20090024703A (enExample)
CN (1) CN101979706B (enExample)
TW (3) TWI352610B (enExample)
WO (4) WO2007146888A2 (enExample)

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CN101484948A (zh) * 2006-07-06 2009-07-15 马林克罗特公司 用电子夹紧阀控制从放射性同位素发生器洗脱的系统和方法
US8013312B2 (en) * 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering
KR20090127366A (ko) * 2007-03-30 2009-12-10 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 디바이스용 극저 접합 형성 방법
TWI474382B (zh) * 2007-04-11 2015-02-21 山米奎普公司 用於缺陷工程的簇離子植入
US7981483B2 (en) * 2007-09-27 2011-07-19 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US8192805B2 (en) * 2007-09-27 2012-06-05 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US20090200494A1 (en) * 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US7807961B2 (en) * 2008-10-08 2010-10-05 Varian Semiconductor Equipment Associates, Inc. Techniques for ion implantation of molecular ions
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US9627180B2 (en) 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
US20110108058A1 (en) * 2009-11-11 2011-05-12 Axcelis Technologies, Inc. Method and apparatus for cleaning residue from an ion source component
JP5503733B2 (ja) * 2010-03-24 2014-05-28 積水化学工業株式会社 プラズマ処理装置
JP5368393B2 (ja) * 2010-08-05 2013-12-18 東京エレクトロン株式会社 気化装置、基板処理装置及び塗布現像装置
WO2012129459A1 (en) * 2011-03-24 2012-09-27 Linde Aktiengesellschaft Self cleaning solutions for carbon implantation
WO2012129454A2 (en) * 2011-03-24 2012-09-27 Advanced Technology Materials, Inc. Cluster ion implantation of arsenic and phosphorus
SG11201404872SA (en) 2012-02-14 2014-09-26 Advanced Tech Materials Carbon dopant gas and co-flow for implant beam and source life performance improvement
JP6267698B2 (ja) * 2012-07-13 2018-01-24 オムニプローブ、インコーポレイテッド エネルギビーム機器のためのガス注入システム
US9539406B2 (en) * 2013-09-10 2017-01-10 General Electric Company Interface device and method for supplying gas flow for subject breathing and apparatus for supplying anesthetic agent to the interface device
DE102014109539A1 (de) * 2014-07-08 2016-01-14 Basf Se System und Verfahren zum Betreiben eines Flüssiggasverdampfers
CN105702546B (zh) * 2014-11-24 2018-06-26 上海凯世通半导体股份有限公司 采用固态掺杂剂的离子源装置
EP3322311B1 (en) * 2015-07-14 2020-10-07 Dynavap, LLC Exothermal vaporizer
US9679745B2 (en) * 2015-10-14 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Controlling an ion beam in a wide beam current operation range
US10221201B2 (en) * 2015-12-31 2019-03-05 Praxair Technology, Inc. Tin-containing dopant compositions, systems and methods for use in ION implantation systems
FI126863B2 (en) * 2016-06-23 2025-08-19 Beneq Oy Apparatus for processing particulate matter
JP6801682B2 (ja) * 2018-02-27 2020-12-16 株式会社Sumco 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法
US11062873B2 (en) * 2018-05-11 2021-07-13 Axcelis Technologies, Inc. Hydrogen bleed gas for an ion source housing
JP7138192B2 (ja) * 2018-06-22 2022-09-15 リンデ ゲゼルシャフト ミット ベシュレンクテル ハフツング シリンダ弁並びにシリンダ及びシリンダ弁内の汚染物質の形成を抑制する方法
DE112021004491T5 (de) 2020-08-26 2023-07-06 Sumco Corporation Epitaktischer siliziumwafer und verfahren zu dessen herstellung sowie verfahren zur herstellung eines halbleiterbauelements

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US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
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US20040002202A1 (en) 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
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US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
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US20070278417A1 (en) * 2005-07-01 2007-12-06 Horsky Thomas N Ion implantation ion source, system and method
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US8110815B2 (en) 2006-06-12 2012-02-07 Semequip, Inc. Vapor delivery to devices under vacuum
US8013312B2 (en) 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US8192805B2 (en) * 2007-09-27 2012-06-05 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices

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