TWI352610B - Vapor delivery to devices under vacuum - Google Patents
Vapor delivery to devices under vacuum Download PDFInfo
- Publication number
- TWI352610B TWI352610B TW096121254A TW96121254A TWI352610B TW I352610 B TWI352610 B TW I352610B TW 096121254 A TW096121254 A TW 096121254A TW 96121254 A TW96121254 A TW 96121254A TW I352610 B TWI352610 B TW I352610B
- Authority
- TW
- Taiwan
- Prior art keywords
- steam
- vapor
- flow
- ion source
- vaporizer
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 claims description 92
- 239000006200 vaporizer Substances 0.000 claims description 87
- 238000012546 transfer Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 30
- 230000008016 vaporization Effects 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 19
- 238000009834 vaporization Methods 0.000 claims description 17
- 239000007787 solid Substances 0.000 claims description 16
- 238000009434 installation Methods 0.000 claims description 12
- 230000033001 locomotion Effects 0.000 claims description 10
- 239000011343 solid material Substances 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 6
- 238000010494 dissociation reaction Methods 0.000 claims description 5
- 230000005593 dissociations Effects 0.000 claims description 5
- 230000008901 benefit Effects 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 238000010025 steaming Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 3
- 241000894007 species Species 0.000 claims description 3
- 241000239226 Scorpiones Species 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims description 2
- 238000002309 gasification Methods 0.000 claims description 2
- 241000196324 Embryophyta Species 0.000 claims 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- 244000003187 Juncus effusus Species 0.000 claims 1
- 239000003708 ampul Substances 0.000 claims 1
- 230000006378 damage Effects 0.000 claims 1
- 238000005485 electric heating Methods 0.000 claims 1
- 230000037361 pathway Effects 0.000 claims 1
- 239000002574 poison Substances 0.000 claims 1
- 231100000614 poison Toxicity 0.000 claims 1
- 230000009257 reactivity Effects 0.000 claims 1
- 230000000153 supplemental effect Effects 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 57
- 238000010276 construction Methods 0.000 description 24
- 238000007789 sealing Methods 0.000 description 11
- 239000012212 insulator Substances 0.000 description 9
- 229920002521 macromolecule Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- -1 octadecyl t-butylate Chemical compound 0.000 description 2
- 239000012070 reactive reagent Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- 206010029412 Nightmare Diseases 0.000 description 1
- 241000237502 Ostreidae Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000005276 aerator Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000015241 bacon Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000476 body water Anatomy 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000010881 fly ash Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 244000144972 livestock Species 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 235000020636 oyster Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80455506P | 2006-06-12 | 2006-06-12 | |
| US86063106P | 2006-11-22 | 2006-11-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200815077A TW200815077A (en) | 2008-04-01 |
| TWI352610B true TWI352610B (en) | 2011-11-21 |
Family
ID=38832757
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096121253A TW200823972A (en) | 2006-06-12 | 2007-06-12 | Vaporizer |
| TW096121254A TWI352610B (en) | 2006-06-12 | 2007-06-12 | Vapor delivery to devices under vacuum |
| TW096121252A TWI415171B (zh) | 2006-06-12 | 2007-06-12 | 搭配離子源使用之蒸汽傳送系統及用於此系統之汽化器 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096121253A TW200823972A (en) | 2006-06-12 | 2007-06-12 | Vaporizer |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096121252A TWI415171B (zh) | 2006-06-12 | 2007-06-12 | 搭配離子源使用之蒸汽傳送系統及用於此系統之汽化器 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8110815B2 (enExample) |
| EP (3) | EP2026889A4 (enExample) |
| JP (3) | JP2009540533A (enExample) |
| KR (3) | KR20090024703A (enExample) |
| CN (1) | CN101979706B (enExample) |
| TW (3) | TW200823972A (enExample) |
| WO (4) | WO2007146888A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008121620A1 (en) * | 2007-03-30 | 2008-10-09 | Advanced Technology Materials, Inc. | Method of forming ultra-shallow junctions for semiconductor devices |
| US7666771B2 (en) | 2005-12-09 | 2010-02-23 | Semequip, Inc. | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
| US7795101B2 (en) * | 2006-04-03 | 2010-09-14 | United Microelectronics Corp. | Method of forming a MOS transistor |
| WO2007146888A2 (en) | 2006-06-12 | 2007-12-21 | Semequip, Inc. | Vapor delivery to devices under vacuum |
| US20090224171A1 (en) * | 2006-07-06 | 2009-09-10 | Verbokkem Arjan F | System and Method for Controlling Elution from a Radioisotope Generator with Electronic Pinch Valves |
| WO2008070453A2 (en) * | 2006-11-22 | 2008-06-12 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
| US7919402B2 (en) | 2006-12-06 | 2011-04-05 | Semequip, Inc. | Cluster ion implantation for defect engineering |
| TWI474382B (zh) * | 2007-04-11 | 2015-02-21 | 山米奎普公司 | 用於缺陷工程的簇離子植入 |
| US7981483B2 (en) * | 2007-09-27 | 2011-07-19 | Tel Epion Inc. | Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices |
| US8192805B2 (en) * | 2007-09-27 | 2012-06-05 | Tel Epion Inc. | Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices |
| US20090200494A1 (en) * | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
| US8809800B2 (en) * | 2008-08-04 | 2014-08-19 | Varian Semicoductor Equipment Associates, Inc. | Ion source and a method for in-situ cleaning thereof |
| US7807961B2 (en) * | 2008-10-08 | 2010-10-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for ion implantation of molecular ions |
| US20110021011A1 (en) | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
| US9627180B2 (en) | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
| US20110108058A1 (en) * | 2009-11-11 | 2011-05-12 | Axcelis Technologies, Inc. | Method and apparatus for cleaning residue from an ion source component |
| WO2011118408A1 (ja) * | 2010-03-24 | 2011-09-29 | 積水化学工業株式会社 | プラズマ処理装置 |
| JP5368393B2 (ja) * | 2010-08-05 | 2013-12-18 | 東京エレクトロン株式会社 | 気化装置、基板処理装置及び塗布現像装置 |
| WO2012129454A2 (en) * | 2011-03-24 | 2012-09-27 | Advanced Technology Materials, Inc. | Cluster ion implantation of arsenic and phosphorus |
| WO2012129459A1 (en) * | 2011-03-24 | 2012-09-27 | Linde Aktiengesellschaft | Self cleaning solutions for carbon implantation |
| SG11201404872SA (en) | 2012-02-14 | 2014-09-26 | Advanced Tech Materials | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| EP2872669A4 (en) * | 2012-07-13 | 2016-03-23 | Omniprobe Inc | GAS INJECTION SYSTEM FOR INSTRUMENTS WITH ENERGETIC RAY |
| US9539406B2 (en) * | 2013-09-10 | 2017-01-10 | General Electric Company | Interface device and method for supplying gas flow for subject breathing and apparatus for supplying anesthetic agent to the interface device |
| DE102014109539A1 (de) * | 2014-07-08 | 2016-01-14 | Basf Se | System und Verfahren zum Betreiben eines Flüssiggasverdampfers |
| CN105702546B (zh) * | 2014-11-24 | 2018-06-26 | 上海凯世通半导体股份有限公司 | 采用固态掺杂剂的离子源装置 |
| CN110710717B (zh) * | 2015-07-14 | 2023-04-25 | 戴纳威普有限责任公司 | 放热汽化器 |
| US9679745B2 (en) * | 2015-10-14 | 2017-06-13 | Varian Semiconductor Equipment Associates, Inc. | Controlling an ion beam in a wide beam current operation range |
| US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
| FI126863B2 (en) * | 2016-06-23 | 2025-08-19 | Beneq Oy | Apparatus for processing particulate matter |
| JP6801682B2 (ja) | 2018-02-27 | 2020-12-16 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法 |
| US11062873B2 (en) * | 2018-05-11 | 2021-07-13 | Axcelis Technologies, Inc. | Hydrogen bleed gas for an ion source housing |
| SG11202012006RA (en) * | 2018-06-22 | 2021-01-28 | Linde Gmbh | Cylinder valves and methods for inhibiting the formation of contaminants in cylinders and cylinder valves |
| KR102755322B1 (ko) * | 2020-08-26 | 2025-01-14 | 가부시키가이샤 사무코 | 에피택셜 실리콘 웨이퍼 및 그 제조 방법, 그리고 반도체 디바이스의 제조 방법 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2733348A (en) | 1956-01-31 | Ion source units | ||
| US2044921A (en) * | 1935-07-17 | 1936-06-23 | Frederick O Swanland | Two-way hose check valve |
| NL225692A (enExample) * | 1957-03-11 | |||
| US3509216A (en) | 1966-09-30 | 1970-04-28 | Olin Mathieson | Process for preparing meta- and para-carborane |
| US3527141A (en) | 1968-08-01 | 1970-09-08 | Jerry A Peoples | Valving system for reciprocating engine |
| JPS6269364U (enExample) * | 1985-10-21 | 1987-05-01 | ||
| US5188705A (en) * | 1991-04-15 | 1993-02-23 | Fei Company | Method of semiconductor device manufacture |
| JP3274895B2 (ja) | 1992-12-02 | 2002-04-15 | ミリポア・コーポレイション | スロットルバルブ |
| US5399200A (en) * | 1994-03-10 | 1995-03-21 | Stauffer; Craig M. | Module in an integrated delivery system for chemical vapors from liquid sources |
| JPH07262961A (ja) * | 1994-03-24 | 1995-10-13 | Nec Yamagata Ltd | イオン注入装置 |
| US6107634A (en) * | 1998-04-30 | 2000-08-22 | Eaton Corporation | Decaborane vaporizer |
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2007
- 2007-06-11 WO PCT/US2007/070900 patent/WO2007146888A2/en not_active Ceased
- 2007-06-11 EP EP07812100A patent/EP2026889A4/en not_active Withdrawn
- 2007-06-11 KR KR1020087030415A patent/KR20090024703A/ko not_active Abandoned
- 2007-06-11 US US12/299,702 patent/US8110815B2/en not_active Expired - Fee Related
- 2007-06-11 JP JP2009515591A patent/JP2009540533A/ja not_active Ceased
- 2007-06-12 CN CN2010101905972A patent/CN101979706B/zh not_active Expired - Fee Related
- 2007-06-12 TW TW096121253A patent/TW200823972A/zh unknown
- 2007-06-12 WO PCT/US2007/071016 patent/WO2007149738A2/en not_active Ceased
- 2007-06-12 JP JP2009515608A patent/JP2009540536A/ja not_active Ceased
- 2007-06-12 WO PCT/US2007/070941 patent/WO2007146904A2/en not_active Ceased
- 2007-06-12 TW TW096121254A patent/TWI352610B/zh not_active IP Right Cessation
- 2007-06-12 US US12/300,918 patent/US20090206281A1/en not_active Abandoned
- 2007-06-12 TW TW096121252A patent/TWI415171B/zh not_active IP Right Cessation
- 2007-06-12 EP EP07812115A patent/EP2027395A4/en not_active Withdrawn
- 2007-06-12 WO PCT/US2007/071010 patent/WO2007146942A2/en not_active Ceased
- 2007-06-12 KR KR1020087030555A patent/KR20090029211A/ko not_active Ceased
- 2007-06-12 EP EP07845176A patent/EP2027592A4/en not_active Withdrawn
- 2007-06-12 JP JP2009515606A patent/JP5421100B2/ja not_active Expired - Fee Related
- 2007-06-12 KR KR1020087030369A patent/KR20090024702A/ko not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US8110815B2 (en) | 2012-02-07 |
| US20090206281A1 (en) | 2009-08-20 |
| CN101979706B (zh) | 2013-11-06 |
| EP2027395A4 (en) | 2011-09-07 |
| WO2007149738A3 (en) | 2008-06-19 |
| TW200815077A (en) | 2008-04-01 |
| KR20090029211A (ko) | 2009-03-20 |
| WO2007146904A2 (en) | 2007-12-21 |
| WO2007146942A3 (en) | 2008-10-16 |
| WO2007146888A3 (en) | 2008-07-31 |
| TWI415171B (zh) | 2013-11-11 |
| TW200823972A (en) | 2008-06-01 |
| EP2026889A2 (en) | 2009-02-25 |
| EP2027592A4 (en) | 2011-09-07 |
| WO2007149738A2 (en) | 2007-12-27 |
| WO2007146904A3 (en) | 2008-06-12 |
| JP2009540536A (ja) | 2009-11-19 |
| WO2007146942A2 (en) | 2007-12-21 |
| KR20090024703A (ko) | 2009-03-09 |
| US20090179157A1 (en) | 2009-07-16 |
| CN101979706A (zh) | 2011-02-23 |
| JP2009540533A (ja) | 2009-11-19 |
| KR20090024702A (ko) | 2009-03-09 |
| JP2009540535A (ja) | 2009-11-19 |
| JP5421100B2 (ja) | 2014-02-19 |
| EP2026889A4 (en) | 2011-09-07 |
| EP2027395A2 (en) | 2009-02-25 |
| EP2027592A2 (en) | 2009-02-25 |
| WO2007146888A2 (en) | 2007-12-21 |
| TW200832518A (en) | 2008-08-01 |
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