KR20090024703A - 진공에서 증기를 디바이스에 전달하는 시스템 - Google Patents

진공에서 증기를 디바이스에 전달하는 시스템 Download PDF

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Publication number
KR20090024703A
KR20090024703A KR1020087030415A KR20087030415A KR20090024703A KR 20090024703 A KR20090024703 A KR 20090024703A KR 1020087030415 A KR1020087030415 A KR 1020087030415A KR 20087030415 A KR20087030415 A KR 20087030415A KR 20090024703 A KR20090024703 A KR 20090024703A
Authority
KR
South Korea
Prior art keywords
vapor
ion source
flow
vaporizer
interface device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020087030415A
Other languages
English (en)
Korean (ko)
Inventor
더글러스 알. 아담스
프랑크 신클래르
브렌트 엠. 코페르티노
Original Assignee
세미이큅, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세미이큅, 인코포레이티드 filed Critical 세미이큅, 인코포레이티드
Publication of KR20090024703A publication Critical patent/KR20090024703A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
KR1020087030415A 2006-06-12 2007-06-11 진공에서 증기를 디바이스에 전달하는 시스템 Abandoned KR20090024703A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80455506P 2006-06-12 2006-06-12
US60/804,555 2006-06-12
US86063106P 2006-11-22 2006-11-22
US60/860,631 2006-11-22

Publications (1)

Publication Number Publication Date
KR20090024703A true KR20090024703A (ko) 2009-03-09

Family

ID=38832757

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020087030415A Abandoned KR20090024703A (ko) 2006-06-12 2007-06-11 진공에서 증기를 디바이스에 전달하는 시스템
KR1020087030555A Ceased KR20090029211A (ko) 2006-06-12 2007-06-12 증발기
KR1020087030369A Abandoned KR20090024702A (ko) 2006-06-12 2007-06-12 이온 소스를 갖는 유용한 증기 전달 시스템과, 이러한 시스템에 사용하기 위한 증발기

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020087030555A Ceased KR20090029211A (ko) 2006-06-12 2007-06-12 증발기
KR1020087030369A Abandoned KR20090024702A (ko) 2006-06-12 2007-06-12 이온 소스를 갖는 유용한 증기 전달 시스템과, 이러한 시스템에 사용하기 위한 증발기

Country Status (7)

Country Link
US (2) US8110815B2 (enExample)
EP (3) EP2026889A4 (enExample)
JP (3) JP2009540533A (enExample)
KR (3) KR20090024703A (enExample)
CN (1) CN101979706B (enExample)
TW (3) TWI415171B (enExample)
WO (4) WO2007146888A2 (enExample)

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US8013312B2 (en) * 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering
WO2008128039A2 (en) * 2007-04-11 2008-10-23 Semequip, Inc. Cluster ion implantation for defect engineering
US8192805B2 (en) * 2007-09-27 2012-06-05 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US7981483B2 (en) * 2007-09-27 2011-07-19 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
US20090200494A1 (en) * 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
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US7807961B2 (en) * 2008-10-08 2010-10-05 Varian Semiconductor Equipment Associates, Inc. Techniques for ion implantation of molecular ions
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US10206425B2 (en) * 2015-07-14 2019-02-19 Dynavap, LLC Exothermal vaporizer
US9539406B2 (en) * 2013-09-10 2017-01-10 General Electric Company Interface device and method for supplying gas flow for subject breathing and apparatus for supplying anesthetic agent to the interface device
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CN105702546B (zh) * 2014-11-24 2018-06-26 上海凯世通半导体股份有限公司 采用固态掺杂剂的离子源装置
US9679745B2 (en) * 2015-10-14 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Controlling an ion beam in a wide beam current operation range
US10221201B2 (en) * 2015-12-31 2019-03-05 Praxair Technology, Inc. Tin-containing dopant compositions, systems and methods for use in ION implantation systems
FI126863B2 (en) * 2016-06-23 2025-08-19 Beneq Oy Apparatus for processing particulate matter
JP6801682B2 (ja) 2018-02-27 2020-12-16 株式会社Sumco 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法
US11062873B2 (en) * 2018-05-11 2021-07-13 Axcelis Technologies, Inc. Hydrogen bleed gas for an ion source housing
KR102513246B1 (ko) 2018-06-22 2023-03-27 린데 게엠베하 실린더 밸브, 및 실린더와 실린더 밸브에서 오염물의 형성을 억제하기 위한 방법
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Also Published As

Publication number Publication date
CN101979706A (zh) 2011-02-23
JP2009540533A (ja) 2009-11-19
WO2007149738A2 (en) 2007-12-27
US8110815B2 (en) 2012-02-07
TWI352610B (en) 2011-11-21
WO2007146904A3 (en) 2008-06-12
EP2026889A4 (en) 2011-09-07
WO2007146942A2 (en) 2007-12-21
US20090179157A1 (en) 2009-07-16
EP2026889A2 (en) 2009-02-25
EP2027592A2 (en) 2009-02-25
CN101979706B (zh) 2013-11-06
TW200832518A (en) 2008-08-01
KR20090029211A (ko) 2009-03-20
WO2007149738A3 (en) 2008-06-19
KR20090024702A (ko) 2009-03-09
US20090206281A1 (en) 2009-08-20
JP2009540535A (ja) 2009-11-19
TW200815077A (en) 2008-04-01
TW200823972A (en) 2008-06-01
WO2007146942A3 (en) 2008-10-16
WO2007146904A2 (en) 2007-12-21
EP2027395A4 (en) 2011-09-07
WO2007146888A3 (en) 2008-07-31
WO2007146888A2 (en) 2007-12-21
JP2009540536A (ja) 2009-11-19
TWI415171B (zh) 2013-11-11
EP2027395A2 (en) 2009-02-25
JP5421100B2 (ja) 2014-02-19
EP2027592A4 (en) 2011-09-07

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