JP2009537970A5 - - Google Patents

Download PDF

Info

Publication number
JP2009537970A5
JP2009537970A5 JP2009510280A JP2009510280A JP2009537970A5 JP 2009537970 A5 JP2009537970 A5 JP 2009537970A5 JP 2009510280 A JP2009510280 A JP 2009510280A JP 2009510280 A JP2009510280 A JP 2009510280A JP 2009537970 A5 JP2009537970 A5 JP 2009537970A5
Authority
JP
Japan
Prior art keywords
manufacturing
connection layer
roughness
topographic
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009510280A
Other languages
English (en)
Japanese (ja)
Other versions
JP5208922B2 (ja
JP2009537970A (ja
Filing date
Publication date
Priority claimed from DE102006028692.8A external-priority patent/DE102006028692B4/de
Application filed filed Critical
Publication of JP2009537970A publication Critical patent/JP2009537970A/ja
Publication of JP2009537970A5 publication Critical patent/JP2009537970A5/ja
Application granted granted Critical
Publication of JP5208922B2 publication Critical patent/JP5208922B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009510280A 2006-05-19 2007-05-16 デバイス、及び、電気伝導性接続部の製造方法 Expired - Fee Related JP5208922B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006023683 2006-05-19
DE102006023683.1 2006-05-19
DE102006028692.8A DE102006028692B4 (de) 2006-05-19 2006-06-22 Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium
DE102006028692.8 2006-06-22
PCT/DE2007/000897 WO2007134581A1 (de) 2006-05-19 2007-05-16 Elektrisch leitende verbindung mit isolierendem verbindungsmedium

Publications (3)

Publication Number Publication Date
JP2009537970A JP2009537970A (ja) 2009-10-29
JP2009537970A5 true JP2009537970A5 (https=) 2011-07-07
JP5208922B2 JP5208922B2 (ja) 2013-06-12

Family

ID=38488603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009510280A Expired - Fee Related JP5208922B2 (ja) 2006-05-19 2007-05-16 デバイス、及び、電気伝導性接続部の製造方法

Country Status (7)

Country Link
US (1) US8102060B2 (https=)
EP (1) EP2018664A1 (https=)
JP (1) JP5208922B2 (https=)
KR (1) KR101367545B1 (https=)
DE (1) DE102006028692B4 (https=)
TW (1) TWI357639B (https=)
WO (1) WO2007134581A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006023685A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102006035627A1 (de) * 2006-07-31 2008-02-07 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper
US7977799B2 (en) * 2008-04-30 2011-07-12 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Planar packageless semiconductor structure with via and coplanar contacts
DE102008030816B4 (de) * 2008-06-30 2019-11-07 Osram Oled Gmbh Verfahren zur Herstellung eines Bauteils mit mindestens einem organischen Material
DE102011100457A1 (de) 2011-05-04 2012-11-08 Osram Opto Semiconductors Gmbh Elektronisches Bauteil mit einem Trägerelement, einer Verbindungsstruktur und einem Halbleiterchip
US10319881B2 (en) 2011-06-15 2019-06-11 Sensor Electronic Technology, Inc. Device including transparent layer with profiled surface for improved extraction
US10522714B2 (en) 2011-06-15 2019-12-31 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
JP2014517544A (ja) 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
US9741899B2 (en) 2011-06-15 2017-08-22 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US9337387B2 (en) 2011-06-15 2016-05-10 Sensor Electronic Technology, Inc. Emitting device with improved extraction
JPWO2013179766A1 (ja) 2012-05-30 2016-01-18 オリンパス株式会社 撮像装置、半導体装置および撮像ユニット
JP6395600B2 (ja) * 2012-05-30 2018-09-26 オリンパス株式会社 撮像装置の製造方法および半導体装置の製造方法
WO2013179767A1 (ja) * 2012-05-30 2013-12-05 オリンパス株式会社 撮像装置の製造方法および半導体装置の製造方法
DE102012112988A1 (de) 2012-12-21 2014-07-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Scheinwerfer
DE102014115770B4 (de) * 2014-10-30 2018-03-29 Infineon Technologies Ag Verfahren zur verbindung eines substrats
US9721812B2 (en) * 2015-11-20 2017-08-01 International Business Machines Corporation Optical device with precoated underfill
US10461221B2 (en) 2016-01-18 2019-10-29 Sensor Electronic Technology, Inc. Semiconductor device with improved light propagation
DE102016103324A1 (de) 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Videowand-Modul und Verfahren zum Herstellen eines Videowand-Moduls
KR20220065292A (ko) 2020-11-13 2022-05-20 삼성전자주식회사 반도체 패키지 및 그의 제조 방법

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666588A (en) * 1970-01-26 1972-05-30 Western Electric Co Method of retaining and bonding articles
DE3001613C2 (de) * 1980-01-17 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Befestigung eines, eine monolithisch integrierte Halbleiterschaltung enthaltenden Halbleiterkörpers aus Silicium an einer Unterlage mit einem entsprechenden Verfahren hierzu
JPS60262430A (ja) 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
DE4122297A1 (de) 1991-07-05 1993-01-07 Messerschmitt Boelkow Blohm Elektronische oder optronische anordnung, insbesondere halbleiter-anordnuung
DE69320098T2 (de) * 1992-05-15 1999-04-01 Denso Corp., Kariya, Aichi Kaltleiterthermistor für Heizgeräte und Verfahren zur Herstellung
US5548091A (en) * 1993-10-26 1996-08-20 Tessera, Inc. Semiconductor chip connection components with adhesives and methods for bonding to the chip
EP0827632B1 (en) * 1995-05-22 2002-01-09 Hitachi Chemical Co., Ltd. Semiconductor device having a semiconductor chip electrically connected to a wiring substrate
DE19529490A1 (de) 1995-08-10 1997-02-13 Fraunhofer Ges Forschung Chipkontaktierungsverfahren, damit hergestellte elektronische Schaltung und Trägersubstrat zur Kontaktierung von Chips
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US5789278A (en) * 1996-07-30 1998-08-04 Micron Technology, Inc. Method for fabricating chip modules
KR100527349B1 (ko) 1997-01-09 2005-11-09 니치아 카가쿠 고교 가부시키가이샤 질화물반도체소자
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
DE59814431D1 (de) * 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
US5861678A (en) * 1997-12-23 1999-01-19 Micron Technology, Inc. Method and system for attaching semiconductor dice to substrates
KR100906931B1 (ko) * 1998-02-26 2009-07-10 이비덴 가부시키가이샤 필드 바이어 구조를 갖는 다층프린트 배선판
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6426565B1 (en) * 2000-03-22 2002-07-30 International Business Machines Corporation Electronic package and method of making same
US6404566B1 (en) 2000-04-04 2002-06-11 Lucent Technologies Inc. Apparatus and method for assembling optical devices
DE10046296C2 (de) * 2000-07-17 2002-10-10 Infineon Technologies Ag Elektronisches Chipbauteil mit einer integrierten Schaltung und Verfahren zu seiner Herstellung
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
WO2002025825A2 (en) * 2000-09-19 2002-03-28 Nanopierce Technologies, Inc. Method for assembling components and antennae in radio frequency identification devices
DE10163799B4 (de) * 2000-12-28 2006-11-23 Matsushita Electric Works, Ltd., Kadoma Halbleiterchip-Aufbausubstrat und Verfahren zum Herstellen eines solchen Aufbausubstrates
DE10149507A1 (de) * 2001-10-06 2003-04-10 Behr Gmbh & Co Wärmetauscher, insbesondere Flachrohr-Wärmetauscher eines Kraftfahrzeugs
US6962835B2 (en) * 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
DE10319782B4 (de) 2003-04-30 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit einem Chipträgerelement
JP2004349399A (ja) * 2003-05-21 2004-12-09 Nec Corp 部品実装基板
DE102004030813B4 (de) * 2004-06-25 2007-03-29 Infineon Technologies Ag Verfahren zur Verbindung einer integrierten Schaltung mit einem Substrat und entsprechende Schaltungsanordnung
JP4565931B2 (ja) * 2004-08-25 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2006114656A (ja) * 2004-10-14 2006-04-27 Seiko Epson Corp 半導体装置、半導体装置の実装構造、及び半導体装置の実装方法

Similar Documents

Publication Publication Date Title
JP2009537970A5 (https=)
KR102000302B1 (ko) 전자, 광학, 및/또는 기계 장치 및 시스템, 그리고 이를 제조하기 위한 방법
JP4948836B2 (ja) 低圧冷間溶接によるデバイス製造方法
JP5097172B2 (ja) グラフェン層の剥離方法、グラフェンウエハの製造方法、及び、グラフェン素子の製造方法
CN106058010B (zh) 微发光二极管阵列的转印方法
KR101367545B1 (ko) 절연성 결합 매체를 이용하는 전기 전도적 결합
CN111933771B (zh) 微发光二极管及其显示装置
US20170047303A1 (en) Printable component structure with electrical contact
JP2001331120A5 (https=)
EP2747132B1 (en) A method for transferring a graphene sheet to metal contact bumps of a substrate for use in semiconductor device package
JP2011522427A5 (https=)
JP2007027693A5 (https=)
WO2020087815A1 (zh) 一种微型元件的批量转移方法
TWI500090B (zh) 半導體封裝件之製法
KR100984108B1 (ko) 전이공정을 이용한 박막형 유연 열전 모듈 제조 방법
CN106082107B (zh) 一种热驱动mems微镜阵列器件及其制造方法
CN106129237A (zh) 一种led固晶方法及led器件
TWI458058B (zh) 晶片封裝體及其形成方法
CN104591074A (zh) 一种基于三明治结构的柔性硅薄膜及其制备方法
JP2021509223A (ja) エレクトロルミネッセンス構造体を転移させる方法
JP2011108948A5 (https=)
TW200710292A (en) Semiconductor device and method for manufacturing multilayered substrate for semiconductor device
CN106094064A (zh) 一种热驱动mems微镜阵列器件及其制造方法
CN102484106B (zh) 用于制造集成电路的方法和产生的膜芯片
CN111834321B (zh) 形成电性贴附结构的方法