JP2009525611A5 - - Google Patents

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Publication number
JP2009525611A5
JP2009525611A5 JP2008553249A JP2008553249A JP2009525611A5 JP 2009525611 A5 JP2009525611 A5 JP 2009525611A5 JP 2008553249 A JP2008553249 A JP 2008553249A JP 2008553249 A JP2008553249 A JP 2008553249A JP 2009525611 A5 JP2009525611 A5 JP 2009525611A5
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Japan
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substrate
chamber
plasma
processing chamber
epitaxial deposition
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JP2008553249A
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JP2009525611A (ja
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Priority claimed from US11/346,804 external-priority patent/US7494545B2/en
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JP2008553249A 2006-02-03 2007-01-16 エピタキシャル堆積プロセス及び装置 Pending JP2009525611A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/346,804 US7494545B2 (en) 2006-02-03 2006-02-03 Epitaxial deposition process and apparatus
PCT/US2007/001031 WO2007092130A2 (en) 2006-02-03 2007-01-16 Dry etch and epitaxial deposition process and apparatus

Related Child Applications (1)

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JP2013076946A Division JP2013175745A (ja) 2006-02-03 2013-04-02 エピタキシャル堆積プロセス及び装置

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JP2009525611A JP2009525611A (ja) 2009-07-09
JP2009525611A5 true JP2009525611A5 (enExample) 2010-02-12

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JP2008553249A Pending JP2009525611A (ja) 2006-02-03 2007-01-16 エピタキシャル堆積プロセス及び装置
JP2013076946A Pending JP2013175745A (ja) 2006-02-03 2013-04-02 エピタキシャル堆積プロセス及び装置
JP2016080171A Active JP6272934B2 (ja) 2006-02-03 2016-04-13 エピタキシャル堆積プロセス及び装置

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JP2013076946A Pending JP2013175745A (ja) 2006-02-03 2013-04-02 エピタキシャル堆積プロセス及び装置
JP2016080171A Active JP6272934B2 (ja) 2006-02-03 2016-04-13 エピタキシャル堆積プロセス及び装置

Country Status (7)

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US (1) US7494545B2 (enExample)
EP (1) EP1994201A2 (enExample)
JP (3) JP2009525611A (enExample)
KR (2) KR20080099305A (enExample)
CN (1) CN101379214B (enExample)
TW (1) TWI355685B (enExample)
WO (1) WO2007092130A2 (enExample)

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