WO2020054476A1 - シリコン酸化物のエッチング方法及びエッチング装置 - Google Patents
シリコン酸化物のエッチング方法及びエッチング装置 Download PDFInfo
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- WO2020054476A1 WO2020054476A1 PCT/JP2019/034427 JP2019034427W WO2020054476A1 WO 2020054476 A1 WO2020054476 A1 WO 2020054476A1 JP 2019034427 W JP2019034427 W JP 2019034427W WO 2020054476 A1 WO2020054476 A1 WO 2020054476A1
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- WO
- WIPO (PCT)
- Prior art keywords
- organic amine
- silicon oxide
- amine compound
- hydrogen fluoride
- dry etching
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- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 100
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 238000005530 etching Methods 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 61
- -1 amine compound Chemical class 0.000 claims abstract description 84
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 53
- 238000001312 dry etching Methods 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims description 118
- 238000012545 processing Methods 0.000 claims description 73
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 25
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 125000004432 carbon atom Chemical group C* 0.000 claims description 12
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 12
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 claims description 9
- 125000005842 heteroatom Chemical group 0.000 claims description 9
- 150000003512 tertiary amines Chemical class 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 6
- 125000004122 cyclic group Chemical group 0.000 claims description 6
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 150000003335 secondary amines Chemical class 0.000 claims description 6
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 229940043279 diisopropylamine Drugs 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 claims description 3
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 125000004434 sulfur atom Chemical group 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 claims 1
- CATWEXRJGNBIJD-UHFFFAOYSA-N n-tert-butyl-2-methylpropan-2-amine Chemical compound CC(C)(C)NC(C)(C)C CATWEXRJGNBIJD-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 23
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- 239000007795 chemical reaction product Substances 0.000 description 16
- 239000011261 inert gas Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 14
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 12
- 150000001412 amines Chemical class 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 6
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 5
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- GTJGHXLFPMOKCE-UHFFFAOYSA-N 2,2,2-trifluoro-n-(2,2,2-trifluoroethyl)ethanamine Chemical compound FC(F)(F)CNCC(F)(F)F GTJGHXLFPMOKCE-UHFFFAOYSA-N 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 229940070337 ammonium silicofluoride Drugs 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KIPSRYDSZQRPEA-UHFFFAOYSA-N 2,2,2-trifluoroethanamine Chemical compound NCC(F)(F)F KIPSRYDSZQRPEA-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- CELKOWQJPVJKIL-UHFFFAOYSA-N 3-fluoropyridine Chemical compound FC1=CC=CN=C1 CELKOWQJPVJKIL-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- KUHCOTOKONGQAG-UHFFFAOYSA-N N,1,1,2,2,2-hexafluoro-N-(1,1,2,2,2-pentafluoroethyl)ethanamine Chemical compound FC(F)(F)C(F)(F)N(F)C(F)(F)C(F)(F)F KUHCOTOKONGQAG-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JWDVRIOQNXFNES-UHFFFAOYSA-N n,1,1,1-tetrafluoro-n-(trifluoromethyl)methanamine Chemical compound FC(F)(F)N(F)C(F)(F)F JWDVRIOQNXFNES-UHFFFAOYSA-N 0.000 description 1
- IXYXXQNFKSEXJM-UHFFFAOYSA-N n,n-dimethylmethanamine;hydron;fluoride Chemical compound F.CN(C)C IXYXXQNFKSEXJM-UHFFFAOYSA-N 0.000 description 1
- XEIJMVGQZDKEPZ-UHFFFAOYSA-N perfluoroethanamine Chemical compound FN(F)C(F)(F)C(F)(F)F XEIJMVGQZDKEPZ-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- MYMLGBAVNHFRJS-UHFFFAOYSA-N trifluoromethanamine Chemical compound NC(F)(F)F MYMLGBAVNHFRJS-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Definitions
- the present disclosure relates to a method for dry-etching silicon oxide without a plasma state and an etching apparatus used for the method.
- a silicon oxide film existing on the surface of a semiconductor wafer as a CVD oxide film, a thermal oxide film, or a natural oxide film.
- a silicon oxide film etching method wet etching using a chemical solution or plasma etching using reactive gas plasma is performed.
- a method using a mixed gas containing hydrogen fluoride gas and ammonia gas has been studied.
- a mixed gas containing HF gas and NH 3 gas is supplied to the surface of a silicon oxide film on a substrate to cause a chemical reaction between the silicon oxide film and the mixed gas, thereby forming a silicon oxide film with ammonium silicofluoride.
- AFS An AFS layer generation step (Chemical Oxide Removal; COR processing) for generating this reaction product layer on the silicon layer of the substrate, and sublimation by heating the AFS layer without supplying a mixed gas.
- etching in two stages of a heating process for thermal decomposition.
- Patent Documents 1 to 4 have a problem that the etching rate of SiO 2 is not sufficient.
- Patent Document 5 has a problem that if only COR processing is performed, the AFS layer remains as a residue on the surface of the silicon oxide film. Further, when a thick AFS layer is formed in the COR process, it is necessary to heat to a temperature exceeding 200 ° C. in order to completely remove the AFS layer by the PHT process, and damage to members other than the silicon oxide film is caused. Was also a concern.
- the present disclosure has an object to provide a method capable of etching silicon oxide at a sufficient rate even at a low temperature of 200 ° C. or less without generating a residue without using plasma.
- the present inventors have conducted intensive studies and found that even when an organic amine compound is used as a base instead of NH 3 , silicon oxide reacts with HF and the organic amine compound, and further, the sublimation temperature of the reaction product is reduced. It has been found that the reaction product can be removed at a low temperature because it is much lower than that of ammonium silicofluoride, and the present disclosure has been completed.
- a gaseous hydrogen fluoride and a gaseous organic amine compound and / or a hydrogen fluoride salt of a gaseous organic amine compound are added to silicon oxide in a plasma state.
- a dry etching method for silicon oxide characterized by reacting.
- Etching involving plasma state means that, for example, a halogen-based gas or the like of about 0.1 to 10 Torr is introduced into a reactor, and high-frequency power is applied to an outer coil or a counter electrode to produce a low-temperature gas plasma in the reactor. And etching of silicon oxide or the like by a halogen-based active chemical species formed therein.
- a halogen-based gas or the like of about 0.1 to 10 Torr is introduced into a reactor, and high-frequency power is applied to an outer coil or a counter electrode to produce a low-temperature gas plasma in the reactor.
- etching of silicon oxide or the like by a halogen-based active chemical species formed therein since the above-described types of gases are reacted without accompanying a plasma state, dry etching of silicon oxide is performed without generating the above-described gas plasma.
- An etching apparatus includes a processing container having a mounting portion on which a substrate having a silicon oxide film is mounted, and a hydrogen fluoride gas supply unit configured to supply a processing gas containing hydrogen fluoride to the processing container.
- An organic amine compound gas supply unit for supplying a processing gas containing an organic amine compound to the processing container,
- An etching apparatus for etching the silicon oxide film from the substrate comprising an evacuation unit for reducing the pressure in the processing container and a heating unit for heating the mounting unit.
- silicon oxide can be etched at a sufficient rate even at a low temperature of 200 ° C. or less without generating a residue without a plasma state.
- the etching apparatus is provided with a hydrogen fluoride gas supply unit and an organic amine compound gas supply unit in a processing vessel on which a substrate having silicon oxide is placed.
- a hydrogen fluoride gas supply unit and an organic amine compound gas supply unit in a processing vessel on which a substrate having silicon oxide is placed.
- FIG. 1 is a schematic diagram of an etching apparatus according to the present disclosure used in Examples and Comparative Examples.
- the dry etching method of the present disclosure reacts a silicon oxide with a gaseous hydrogen fluoride and a gaseous organic amine compound and / or a hydrogen fluoride salt of a gaseous organic amine compound without a plasma state. It is characterized by.
- Specific embodiments of the dry etching method of the present disclosure can be divided into two embodiments.
- the first embodiment is a method in which a processing gas containing hydrogen fluoride and an organic amine compound is supplied to an etching apparatus to perform etching
- the second embodiment uses a processing gas containing an organic amine compound and a fluoride gas.
- a processing gas containing hydrogen is separately supplied to an etching apparatus to perform etching.
- a silicon oxide is etched by supplying a processing gas (dry etching gas) containing hydrogen fluoride and an organic amine compound to an etching apparatus and bringing the processing gas into contact with the silicon oxide.
- a processing gas dry etching gas
- a hydrogen fluoride gas and an organic amine compound gas may be separately supplied and mixed in an etching apparatus, or an organic amine obtained by reacting hydrogen fluoride and an organic amine compound in advance may be used.
- Hydrofluoric acid salt may be supplied into the etching apparatus as a dry etching gas. Even when the hydrogen fluoride gas and the organic amine compound gas are separately supplied and mixed in the etching apparatus, at least a part of the organic amine hydrogen fluoride salt is generated in the etching apparatus. Therefore, in the etching apparatus, the three components of the gaseous hydrogen fluoride, the gaseous organic amine compound, and the gaseous organic amine compound hydrofluoride may coexist and come into contact with the silicon oxide.
- the mixing ratio of hydrogen fluoride and the organic amine compound contained in the processing gas is a value obtained by dividing the number of moles of the organic amine compound by the number of moles of hydrogen fluoride, and is preferably 0.001 or more and 100 or less, and 0.01 or more and 10 or less. The following is more preferable, and the range of 0.1 to 5 is particularly preferable.
- N is a nitrogen atom.
- R 1 is a hydrocarbon group which may have a ring having 1 to 10 carbon atoms, a hetero atom or a halogen atom.
- R 2 and R 3 are A hydrocarbon group which may have a hydrogen atom, a ring having 1 to 10 carbon atoms, a hetero atom, or a halogen atom, provided that the hydrocarbon group is branched when it has 3 or more carbon atoms.
- the hetero atom of the hydrocarbon group may be a nitrogen atom, an oxygen atom, a sulfur atom or a phosphorus atom, and both R 1 and R 2 may be a hydrocarbon having 1 or more carbon atoms.
- R 1 and R 2 may be directly bonded to form a cyclic structure, and when R 1 or R 2 is directly bonded by a double bond to form a cyclic structure, R 3 is present. may form an aromatic ring without.
- R 1, R 2 and R 3 are the same carbide It may be originally be a different hydrocarbon radical.
- R 1 examples include a methyl group, an ethyl group, a propyl group, a butyl group and the like, and a part of hydrogen constituting these organic groups may be substituted by halogen such as fluorine and chlorine.
- R 2 and R 3 include a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group and the like, and a part or all of the hydrogen constituting these organic groups is converted by a halogen such as fluorine or chlorine. It may be substituted.
- the organic amine represented by the general formula (1) may be a heterocyclic amine having a five-membered ring structure or a six-membered ring structure.
- organic amine compound examples include monomethylamine, dimethylamine, trimethylamine, dimethylethylamine, diethylmethylamine, monoethylamine, diethylamine, triethylamine, mononormal propylamine, dinormal propylamine, monoisopropylamine, diisopropylamine, and monobutylamine , Dibutylamine, monotertiarybutylamine, ditertiarybutylamine, pyrrolidine, piperidine, piperazine, pyridine, pyrazine and the like.
- a compound in which part or all of the CH bond of the above compound is a CF bond (trifluoromethylamine, 1,1,1-trifluorodimethylamine, perfluorodimethylamine , 2,2,2-trifluoroethylamine, perfluoroethylamine, bis (2,2,2-trifluoroethyl) amine, perfluorodiethylamine, 3-fluoropyridine, etc.
- organic amine compounds are conjugated.
- the acid has a pKa of 3.2 or more of HF, is capable of forming a salt with hydrogen fluoride, has a constant vapor pressure in a temperature range of 20 to 100 ° C., and further has a temperature in this temperature range. Is preferable since it can be supplied as a gas without being decomposed.
- examples of the organic amine compound include monomethylamine, dimethylamine, trimethylamine, monoethylamine, monopropylamine, isopropylamine, 1,1,1-trifluorodimethylamine, 2,2-trifluoroethylamine and bis (2,2,2-trifluoroethyl) amine are preferred.
- secondary amines and tertiary amines are preferable as the organic amine compound in that the etching rate of silicon oxide is high.
- Specific examples of the secondary amine include dimethylamine, diethylamine, dinormal propylamine, diisopropylamine, dibutylamine, and ditertiary butylamine.
- Specific examples of the tertiary amine include trimethylamine, dimethylethylamine, diethylmethylamine, and triethylamine.
- the processing gas may consist essentially of hydrogen fluoride and an organic amine compound. Further, the processing gas may or may not contain an inert gas.
- an inert gas a rare gas such as an argon gas or a nitrogen gas can be used.
- the ratio of the inert gas contained in the processing gas is a value obtained by dividing the number of moles of the inert gas by the number of moles of hydrogen fluoride, and is preferably from 0 to 100, more preferably 10 or less, and particularly preferably 5 or less.
- the contact temperature between the processing gas and the silicon oxide may be any temperature at which the reaction product of the silicon oxide, hydrogen fluoride, and the organic amine compound sublimates or thermally decomposes.
- the contact temperature is preferably 200 ° C. or lower, more preferably 150 ° C. or lower, and particularly preferably 120 ° C. or lower.
- the contact temperature is preferably 20 ° C. or higher, more preferably 50 ° C. or higher, and particularly preferably 80 ° C. or higher.
- the pressure at which the processing gas is brought into contact with the silicon oxide is not particularly limited, but is preferably 0.1 Pa or more and 100 kPa or less, more preferably 0.5 Pa or more and 50 kPa or less, and particularly preferably 1 Pa or more and 10 kPa or less.
- the temperature and the pressure do not need to be constant during the contact between the processing gas and the silicon oxide, and the temperature and the pressure may be changed at regular intervals. For example, a time zone in which the temperature is increased or the pressure is decreased may be provided at regular intervals to promote the sublimation of the reaction product.
- a COR step of bringing a processing gas into contact with silicon oxide and a PHT step of sublimating a reaction product without supplying a processing gas may be performed.
- the PHT step may be performed at a temperature of 200 ° C. or less.
- the silicon oxide may be a silicon oxide film formed on a semiconductor substrate.
- the semiconductor substrate is usually a silicon substrate, and a silicon film, a silicon nitride film, a metal film, or the like may be exposed on the semiconductor substrate in addition to the silicon oxide film.
- the silicon oxide film is selectively etched with respect to the silicon nitride film by using the etching method of the present embodiment on the target substrate on which both the silicon oxide film and the silicon nitride film are exposed. can do.
- the silicon oxide / silicon nitride etching selectivity is preferably 2.5 or more, more preferably 5 or more, more preferably 8 or more, and particularly preferably 10 or more.
- the silicon oxide / silicon nitride etching selectivity refers to a value obtained by dividing the etching rate of the silicon oxide film by the etching rate of the silicon nitride film.
- the etching rate is a value obtained by dividing a change in the thickness of a film before and after etching by a time required for etching.
- the dry etching method of the present disclosure can be applied to a step of selectively dry etching only SiO 2 from a structure in which SiO 2 is adjacent to SiN.
- a structure in which a SiO 2 film is covered with a SiN film and a structure in which a SiO 2 film and a SiN film are sequentially stacked.
- a laminated film of SiO 2 and SiN is formed on a semiconductor substrate, a through-hole is formed in the laminated film, and an etching gas is supplied from the through-hole to the laminated film.
- the method for manufacturing a semiconductor device according to the present disclosure is not limited to the method for manufacturing a semiconductor device described above, but is also applicable to a method for manufacturing another semiconductor device that involves etching a silicon oxide film formed on a substrate. can do.
- the second embodiment of the dry etching method according to the present disclosure is a method in which a processing gas containing an organic amine compound and a processing gas containing hydrogen fluoride are separately supplied to an etching apparatus to perform etching. That is, in the second embodiment, a step of supplying a processing gas containing hydrogen fluoride to the etching apparatus is performed after the step of supplying the processing gas containing the organic amine compound to the silicon oxide to the etching apparatus. A vacuuming step may be performed between the above two steps.
- the organic amine compound As the organic amine compound, the compound represented by the general formula (1) shown in the first embodiment can be used.
- the gas introduced into the etching apparatus may be substantially composed of only the organic amine, or may be composed of only hydrogen fluoride. Further, an inert gas may or may not be contained in the organic amine or hydrogen fluoride. As the inert gas, a rare gas such as an argon gas or a nitrogen gas can be used.
- the ratio of the inert gas contained in the processing gas is a value obtained by dividing the number of moles of the inert gas by the number of moles of hydrogen fluoride or the organic amine, and is preferably 0 to 100, more preferably 10 or less, and 5 or less. Particularly preferred.
- the contact temperature between the organic amine compound and the silicon oxide is preferably 200 ° C or lower, more preferably 150 ° C or lower, and more preferably 120 ° C or lower. Is particularly preferred.
- the contact temperature between hydrogen fluoride and silicon oxide is preferably 200 ° C. or lower, more preferably 150 ° C. or lower, and particularly preferably 120 ° C. or lower.
- the respective contact temperatures are preferably 20 ° C. or higher, more preferably 50 ° C. or higher, and particularly preferably 80 ° C. or higher.
- the contact temperature between the organic amine compound and the silicon oxide and the contact temperature between hydrogen fluoride and the silicon oxide may be the same or different.
- the pressure at the time of contact between the organic amine compound and the silicon oxide is preferably 0.1 Pa or more and 100 kPa or less, more preferably 0.5 Pa or more and 50 kPa or less.
- the pressure is particularly preferably from 1 Pa to 10 kPa.
- the aspect of the silicon oxide to be etched is preferably the same as that of the first embodiment, and the silicon oxide film is selectively formed with respect to the silicon nitride film by the etching method according to the second embodiment. Can be etched.
- the silicon oxide / silicon nitride etching selectivity is preferably 2.5 or more, more preferably 5 or more, and particularly preferably 10 or more.
- a step of supplying a processing gas containing an organic amine compound may be performed after the step of supplying a processing gas containing a hydrogen fluoride gas. Further, the step of supplying the processing gas containing the hydrogen fluoride gas and the step of supplying the processing gas containing the organic amine compound may be alternately repeated.
- the etching method includes a processing container having a mounting portion on which a target substrate having a silicon oxide film is mounted, and a hydrogen fluoride gas supply for supplying a processing gas containing hydrogen fluoride to the processing container.
- a processing container having a mounting portion on which a target substrate having a silicon oxide film is mounted
- a hydrogen fluoride gas supply for supplying a processing gas containing hydrogen fluoride to the processing container.
- an organic amine compound gas supply unit for supplying a processing gas containing an organic amine compound to the processing container
- a vacuum exhaust unit for reducing the pressure in the processing container
- a unit for heating the mounting unit and a heating unit.
- the etching apparatus may further include an inert gas supply unit for supplying an inert gas to the processing container, if necessary.
- FIG. 1 is a schematic diagram of a reaction apparatus 1 which is an example of an etching apparatus according to an embodiment of the present disclosure.
- a stage (mounting unit) 3 that is heated by a heater (heating unit) 8 is provided in a chamber (processing container) 2 that configures the reaction apparatus 1.
- a heater (not shown) is also provided around the chamber 2 so that the chamber wall can be heated.
- a processing gas is introduced from the hydrogen fluoride gas supply unit 5a and the organic amine compound gas supply unit 5b installed at the upper part of the chamber, and the processing gas is brought into contact with the sample (substrate to be processed) 4 installed on the stage 3. it can.
- the gas in the chamber 2 is discharged via a gas discharge line 6.
- the chamber 2 includes an inert gas supply unit 5c, and may supply an inert gas as needed. Further, a vacuum exhaust pump (vacuum exhaust unit) (not shown) is connected to the gas exhaust line, and the inside of the chamber 2 can be set to a reduced pressure environment. Further, a pressure gauge 7 is installed in the chamber 2. Note that an organic amine hydrofluoride gas supply unit may be provided instead of the hydrogen fluoride gas supply unit 5a and the organic amine compound gas supply unit 5b.
- the reaction device 1 is provided with a control unit.
- the control unit includes, for example, a computer, and includes a program, a memory, and a CPU.
- the program incorporates a group of steps so as to perform a series of operations in the first embodiment or the second embodiment. According to the program, adjustment of the temperature of the sample 4, opening and closing of a valve of each gas supply unit, Adjustment of the flow rate of each gas, adjustment of the pressure in the chamber 2, and the like are performed.
- This program is stored in a computer storage medium, for example, a compact disk, hard disk, magneto-optical disk, memory card, or the like, and is installed in the control unit.
- the residue resulting from the formation of the reaction product layer is not left on the silicon oxide surface. Since etching can be performed, silicon oxide can be etched in one step without performing PHT treatment for sublimating a reaction product. As a result, silicon oxide can be etched more efficiently than cycle etching in which etching is performed by switching between COR processing and PHT processing.
- the silicon oxide can be etched using the present method. Therefore, it can be applied to a substrate using a material having low heat resistance.
- silicon oxide can be selectively etched with respect to polycrystalline silicon.
- silicon oxide can be etched with a higher silicon oxide / silicon nitride etching selectivity than the conventional method using ammonia.
- silicon oxide can be etched at a higher speed than in the case where water or alcohol is added.
- reaction devices as shown in FIG. 1 were used. Further, as the sample 4, a silicon wafer A on which a polycrystalline silicon film was formed, a silicon wafer B on which a thermal oxide film was formed, and a silicon wafer C on which a silicon nitride film was formed.
- Examples 1-1 to 1-11, Comparative Examples 1-1 to 1-8 First, wafers A to C are placed on a stage in a chamber, and the inside of the chamber is evacuated. Then, the temperature of the stage is set to a predetermined temperature shown in Table 1 below. Thereafter, the processing gas was supplied into the chamber and held for 30 seconds. After that, the inside of the chamber was evacuated to 10 Pa or less, and after replacing with an inert gas, the wafers A to C were taken out, the respective film thicknesses were measured, and the etching amount was evaluated. Further, the surface of the thermally oxidized film of the silicon wafer B on which the thermally oxidized film was formed was observed with an optical microscope, and the presence or absence of residue on the surface was evaluated.
- Example 1-1 shows the type, flow rate, HF flow rate, pressure during etching, temperature, etching time, and evaluation results after etching in the above-described etching.
- Example 1-1 HF gas and trimethylamine gas were simultaneously supplied to the chamber from different inlets, and the processing gas mixed in the chamber was brought into contact with the sample.
- Example 1-2 a gas obtained by vaporizing a hydrogen fluoride salt of trimethylamine (NMe 3 .HF) was supplied to the chamber as a processing gas.
- Examples 1-3, 1-4, 1-8, and Comparative Example 1-1 dimethylamine, diethylamine, monomethylamine, and ammonia were used instead of trimethylamine of Example 1-1, and Comparative Example 1-2 was used.
- Ammonium fluoride (NH 4 F) was used in place of the trimethylamine hydrogen fluoride salt of Example 1-2.
- Examples 1-5 to 1-7 and 1-9 and Comparative Example 1-3 the temperature was changed.
- the flow ratio of trimethylamine to HF gas was changed as compared with Example 1-1.
- Comparative Example 1-4 only HF was supplied, and in Comparative Example 1-5, only trimethylamine was supplied after dilution with argon gas.
- Comparative Examples 1-6 to 1-8 a gas obtained by vaporizing water, methanol, and isopropyl alcohol was supplied instead of the trimethylamine of Example 1-1.
- Comparative Examples 1-1 to 1-3 the vapor pressure of ammonium hexafluorosilicate was low and could not be sufficiently removed at 60 ° C. or 100 ° C., and residues such as ammonium hexafluorosilicate caused heat of the wafer. It remained on the surface of the oxide film.
- Comparative Examples 1-1 to 1-3 if heat treatment is performed at a temperature higher than 200 ° C. after contact with the processing gas, residues remaining on the surface of the thermal oxide film on the wafer can be removed. it can.
- Examples 1-8 and 1-9 even when monomethylamine was used, the silicon oxide could be etched without any residue.
- the etching rates of silicon oxide are compared at the same temperature. However, when monomethylamine as a primary amine was used, it was faster than when ammonia was used, but later than when dimethylamine as a secondary amine and trimethylamine as a tertiary amine were used.
- Comparative Example 1-4 In Comparative Example 1-4 in which only HF was brought into contact, the etching rate of silicon oxide was slow, and the silicon oxide / silicon nitride etching selectivity (SiO 2 / SiN selectivity) was low. In Comparative Example 5 in which only the organic amine compound was brought into contact, neither polycrystalline silicon nor silicon oxide or silicon nitride was etched. In Comparative Examples 1-6 to 1-8, water, methanol, isopropyl alcohol was used by adding to HF gas, the etching rate of SiO 2 is slow, SiO 2 / SiN selection ratio was low.
- Examples 1-1 to 1-4 were compared with Comparative Examples 1-1 and 1-2, and Examples 1-5 to 1-7 were compared with Comparative Example 1-3. Each has a high SiO 2 etching rate and a high SiO 2 / SiN selectivity. Further, in Examples 1-1 to 1-4 and Examples 1-10 to 1-11, which were brought into contact with the processing gas at 100 ° C., the SiO 2 / SiN selectivity exceeded 8.
- Etching was evaluated by a method of supplying an organic amine compound first and then supplying an HF gas.
- the wafers A to C are placed on the stage in the chamber, and the inside of the chamber is evacuated to 10 Pa or less, and then the temperature of the stage is set to a predetermined temperature shown in Table 2.
- a processing gas containing an amine was supplied into the chamber, and maintained at a pressure of 30 Torr (4 kPa) for 30 seconds.
- the inside of the chamber was evacuated to 0.1 kPa, and then a processing gas containing HF gas was supplied into the chamber and held at a pressure of 30 Torr (4 kPa) for 30 seconds.
- the inside of the chamber was evacuated to 10 Pa or less, and after replacing with an inert gas, the wafers A to C were taken out, the respective film thicknesses were measured, and the etching amount was evaluated. Further, the surface of the thermally oxidized film of the silicon wafer B on which the thermally oxidized film was formed was observed with an optical microscope, and the presence or absence of residue on the surface was evaluated.
- Table 2 shows the type of amine used, the temperature, and the evaluation result after etching.
- Comparative Example 2-2 only the step of supplying the processing gas including the HF gas was performed without performing the step of supplying the amine.
- silicon oxide can be produced without generating residues. It could be etched.
- the etching rates of the silicon oxides of Examples 2-1 to 2-3 were faster than Comparative Example 2-1 using ammonia.
- the etching rate of silicon oxide was higher when using dimethylamine, which is a secondary amine, and when using trimethylamine, which is a tertiary amine, than when using monomethylamine, which is a primary amine.
- the tertiary amine trimethylamine had a SiO 2 / SiN selectivity of more than 10.
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Abstract
Description
本開示のエッチング方法では、上記した種類のガスを、プラズマ状態を伴わずに反応させるので、上記したガスプラズマを発生させることなく、シリコン酸化物のドライエッチングを行う。
上記処理容器内を減圧するための真空排気部と、上記載置部を加熱するための加熱部と、を備える、上記基板から上記シリコン酸化物膜をエッチングするエッチング装置である。
本開示のドライエッチング方法の具体的な実施形態は、二つの実施形態に分けることができる。第1の実施形態は、フッ化水素及び有機アミン化合物を含む処理ガスを、エッチング装置に供給してエッチングする方法であり、第2の実施形態は、有機アミン化合物を含む処理ガスと、フッ化水素を含む処理ガスとを、分けてエッチング装置に供給してエッチングする方法である。
第1の実施形態においては、フッ化水素及び有機アミン化合物を含む処理ガス(ドライエッチングガス)を、エッチング装置に供給し、シリコン酸化物に接触させることで、シリコン酸化物をエッチングする。
結果的には、いずれの場合においても、シリコン酸化物との反応により、ヘキサフルオロケイ酸の有機アミン塩が生成することに変わりはない。
本開示のドライエッチング方法の第2の実施形態は、有機アミン化合物を含む処理ガスと、フッ化水素を含む処理ガスを、分けてエッチング装置に供給してエッチングする方法である。すなわち、第2の実施形態では、シリコン酸化物に有機アミン化合物を含む処理ガスをエッチング装置に供給する工程の後に、フッ化水素を含む処理ガスをエッチング装置に供給する工程を行う。上記した2つの工程の間に、真空引き工程を行ってもよい。
本実施形態のエッチング方法は、酸化シリコン膜を有する被処理基板を載置する載置部を有する処理容器と、前記処理容器にフッ化水素を含む処理ガスを供給するためのフッ化水素ガス供給部と、前記処理容器に有機アミン化合物を含む処理ガスを供給するための有機アミン化合物ガス供給部と、前記処理容器内を減圧するための真空排気部と、前記載置部を加熱するための加熱部と、を備えたことを特徴とするエッチング装置により実施することができる。なお、エッチング装置には、必要に応じて、前記処理容器に不活性ガスを供給するための不活性ガス供給部をさらに備えてもよい。
反応装置1を構成するチャンバー(処理容器)2内には、ヒーター(加熱部)8により加熱されるステージ(載置部)3が設置されている。また、チャンバー2の周囲にもヒーター(図示せず)が設置されており、チャンバー壁を加熱できるようになっている。チャンバー上部に設置されたフッ化水素ガス供給部5a及び有機アミン化合物ガス供給部5bから処理ガスを導入し、ステージ3上に設置した試料(被処理基板)4に対し処理ガスを接触させることができる。チャンバー2内のガスはガス排出ライン6を経由して排出される。チャンバー2は、不活性ガス供給部5cを備えており、必要により不活性ガスを供給してもよい。また、ガス排出ラインには図示しない真空排気ポンプ(真空排気部)が接続され、チャンバー2内を減圧環境にすることができ、さらにチャンバー2には圧力計7が設置されている。なお、フッ化水素ガス供給部5a及び有機アミン化合物ガス供給部5bに代えて、有機アミンフッ化水素塩ガス供給部を設けてもよい。
ヒーター8によりステージ3の温度を所定値にまで加熱した後、フッ化水素ガス供給部5a及び有機アミン化合物ガス供給部5bから第1の実施形態又は第2の実施形態に基づいた条件で、チャンバー2内に処理ガスを導入し、試料4と処理ガスを接触させる。この際に、反応生成物は、反応して生成すると同時に昇華し、ガス排出ライン6を通じてチャンバー2から除去される。
上記した第1の実施形態に係るドライエッチング方法又は第2の実施形態に係るドライエッチング方法を用いることにより、200℃以下の低温でも、プラズマを用いずにシリコン酸化物をエッチングすることが可能である。
まず、チャンバー内のステージ上にウェハA~Cを載置し、チャンバー内を真空引きしたのち、ステージの温度を下記の表1に示す所定の温度にする。その後、チャンバー内に処理ガスを供給して30秒間保持した。その後、チャンバー内を10Pa以下まで真空引きし、不活性ガスで置換した後にウェハA~Cを取り出し、それぞれの膜厚を測定し、エッチング量を評価した。また、光学顕微鏡で熱酸化膜が形成されたシリコンウェハBのエッチング後の熱酸化膜の表面を観察し、表面の残渣の有無を評価した。
なお、実施例1-1では、HFガスとトリメチルアミンガスを別の導入口から同時にチャンバーに供給して、チャンバー内で混合した処理ガスを試料に接触させた。また、実施例1-2では、トリメチルアミンのフッ化水素塩(NMe3・HF)を気化させたガスを、処理ガスとしてチャンバーに供給した。実施例1-3、1-4、1-8、比較例1-1では、実施例1-1のトリメチルアミンに代えて、ジメチルアミン、ジエチルアミン、モノメチルアミン、アンモニアを用い、比較例1-2では、実施例1-2のトリメチルアミンのフッ化水素塩に代えて、フッ化アンモニウム(NH4F)を用いた。実施例1-5~1-7、1-9、比較例1-3では、温度を変更した。実施例1-10~1~11では、実施例1-1と比較して、トリメチルアミンとHFガスの流量比を変えた。比較例1-4ではHFのみ、比較例1-5ではトリメチルアミンのみをアルゴンガスで希釈して供給した。また、比較例1-6~1-8では、実施例1-1のトリメチルアミンに代えて、水、メタノール、イソプロピルアルコールを気化させたガスを供給した。
先に有機アミン化合物を供給し、その後にHFガスを供給する方法にて、エッチング評価を行った。
まず、チャンバー内のステージ上にウェハA~Cを載置し、チャンバー内を10Pa以下まで真空引きしたのち、ステージの温度を表2に示す所定の温度にする。その後、アミンを含む処理ガスをチャンバー内に供給して30Torr(4kPa)の圧力で30秒間保持した。その後、チャンバー内を0.1kPaまで真空引きしたのち、今度はHFガスを含む処理ガスをチャンバー内に供給して30Torr(4kPa)の圧力で30秒間保持した。その後、チャンバー内を10Pa以下まで真空引きし、不活性ガスで置換した後にウェハA~Cを取り出し、それぞれの膜厚を測定し、エッチング量を評価した。また、光学顕微鏡で熱酸化膜が形成されたシリコンウェハBのエッチング後の熱酸化膜の表面を観察し、表面の残渣の有無を評価した。
なお、比較例2-2では、アミンを供給する工程を行わずに、HFガスを含む処理ガスを供給する工程のみを行った。
2 チャンバー(処理容器)
3 ステージ(載置部)
4 試料(被処理基板)
5a フッ化水素ガス供給部
5b 有機アミン化合物ガス供給部
5c 不活性ガス供給部
6 ガス排出ライン
7 圧力計
8 ヒーター(加熱部)
Claims (18)
- シリコン酸化物に、気体のフッ化水素及び気体の有機アミン化合物、及び/又は、気体の有機アミン化合物のフッ化水素塩を、プラズマ状態を伴わず、反応させることを特徴とするシリコン酸化物のドライエッチング方法。
- 前記反応させる際の前記シリコン酸化物の温度が、200℃以下であることを特徴とする請求項1に記載のドライエッチング方法。
- 前記反応は、
フッ化水素及び有機アミン化合物、及び/又は、有機アミン化合物のフッ化水素塩を含む処理ガスを、シリコン酸化物に接触させる工程からなることを特徴とする請求項1又は2に記載のドライエッチング方法。 - 前記処理ガスに含まれるフッ化水素と有機アミン化合物の混合比は、有機アミン化合物のモル数をフッ化水素のモル数で除した値で、0.001以上100以下であることを特徴とする請求項1又は2に記載のドライエッチング方法。
- 前記反応は、
シリコン酸化物に有機アミン化合物を含む処理ガスを接触させる工程と、
前記シリコン酸化物にフッ化水素を含む処理ガスを接触させる工程と、からなることを特徴とする請求項1に記載のドライエッチング方法。 - 前記有機アミン化合物が、下記の一般式(1)に示される化合物であることを特徴とする請求項1~5のいずれか1項に記載のドライエッチング方法。
- 前記有機アミン化合物が、二級アミンまたは三級アミンであることを特徴とする請求項1~6のいずれか1項に記載のドライエッチング方法。
- 前記二級アミンは、ジメチルアミン、ジエチルアミン、ジノルマルプロピルアミン、ジイソプロピルアミン、ジブチルアミン及びジターシャリーブチルアミンからなる群から選ばれる少なくとも一つの化合物である請求項7に記載のドライエッチング方法。
- 前記三級アミンは、トリメチルアミン、ジメチルエチルアミン、ジエチルメチルアミン及びトリエチルアミンからなる群から選ばれる少なくとも一つの化合物である請求項7に記載のドライエッチング方法。
- シリコン酸化物膜とシリコン窒化物膜の両方が露出した被処理基板に対して、シリコン酸化物膜を、選択的にエッチングする請求項1~9のいずれかに記載のドライエッチング方法。
- シリコン酸化物膜のシリコン窒化物膜に対する選択比は、2.5以上であることを特徴とする請求項10に記載のドライエッチング方法。
- シリコン酸化物膜を有する半導体基板に対して、請求項1~11のいずれか1項に記載のドライエッチング方法を適用して、シリコン酸化物膜をエッチングする工程を含むことを特徴とする半導体デバイスの製造方法。
- フッ化水素及び有機アミン化合物、及び/又は、有機アミン化合物のフッ化水素塩を含むドライエッチングガス組成物。
- 実質的にフッ化水素と有機アミン化合物、及び/又は、有機アミン化合物のフッ化水素塩のみからなる請求項13に記載のドライエッチングガス組成物。
- シリコン酸化物膜を有する基板を載置する載置部を有する処理容器と、
前記処理容器にフッ化水素を含む処理ガスを供給するためのフッ化水素ガス供給部と、
前記処理容器に有機アミン化合物を含む処理ガスを供給するための有機アミン化合物ガス供給部と、
前記処理容器内を減圧するための真空排気部と、
前記載置部を加熱するための加熱部と、
を備える、前記基板から前記シリコン酸化物膜をエッチングするエッチング装置。 - 請求項1に記載のドライエッチング方法に使用するためのフッ化水素。
- 請求項1に記載のドライエッチング方法に使用するための有機アミン化合物。
- 前記有機アミン化合物が、下記の一般式(1)に示される化合物である請求項17に記載の有機アミン化合物。
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2021205632A1 (ja) * | 2020-04-10 | 2021-10-14 | ||
WO2021220834A1 (ja) * | 2020-04-28 | 2021-11-04 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
WO2021221036A1 (ja) * | 2020-04-28 | 2021-11-04 | セントラル硝子株式会社 | 組成物の供給方法、組成物及びドライエッチング方法 |
CN113675080A (zh) * | 2020-05-15 | 2021-11-19 | 东京毅力科创株式会社 | 蚀刻方法和蚀刻装置 |
KR20220020205A (ko) * | 2020-08-11 | 2022-02-18 | 도쿄엘렉트론가부시키가이샤 | 실리콘 산화막을 에칭하는 방법, 장치 및 시스템 |
JP2022138115A (ja) * | 2021-03-09 | 2022-09-22 | 株式会社日立ハイテク | エッチング方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11715641B2 (en) * | 2018-09-13 | 2023-08-01 | Central Glass Company, Limited | Method and device for etching silicon oxide |
TW202213495A (zh) * | 2020-08-28 | 2022-04-01 | 日商東京威力科創股份有限公司 | 蝕刻方法及蝕刻裝置 |
US11605544B2 (en) * | 2020-09-18 | 2023-03-14 | Applied Materials, Inc. | Methods and systems for cleaning high aspect ratio structures |
WO2023168170A1 (en) * | 2022-03-03 | 2023-09-07 | Lam Research Corporation | Selective precision etching of semiconductor materials |
JP7398493B2 (ja) * | 2022-03-18 | 2023-12-14 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02256235A (ja) * | 1988-12-27 | 1990-10-17 | Toshiba Corp | 表面処理方法 |
WO2007049510A1 (ja) * | 2005-10-27 | 2007-05-03 | Tokyo Electron Limited | 処理方法及び記録媒体 |
US20090275205A1 (en) * | 2008-05-02 | 2009-11-05 | Micron Technology, Inc. | Methods of removing silicon oxide and gaseous mixtures for achieving same |
JP2018026566A (ja) * | 2016-08-10 | 2018-02-15 | 東京エレクトロン株式会社 | ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04137532A (ja) | 1990-04-23 | 1992-05-12 | Toshiba Corp | 表面処理方法及びその装置 |
JP2833946B2 (ja) | 1992-12-08 | 1998-12-09 | 日本電気株式会社 | エッチング方法および装置 |
DE69425821T2 (de) | 1993-05-13 | 2001-04-05 | Imec Inter Uni Micro Electr | Verfahren zum Ätzen Silizium-Oxid-Schichten mit Mischungen von HF und Carbonsäure |
US5439553A (en) | 1994-03-30 | 1995-08-08 | Penn State Research Foundation | Controlled etching of oxides via gas phase reactions |
US6065481A (en) | 1997-03-26 | 2000-05-23 | Fsi International, Inc. | Direct vapor delivery of enabling chemical for enhanced HF etch process performance |
US20070123051A1 (en) * | 2004-02-26 | 2007-05-31 | Reza Arghavani | Oxide etch with nh4-nf3 chemistry |
JP4890025B2 (ja) | 2005-12-28 | 2012-03-07 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
KR100870914B1 (ko) * | 2008-06-03 | 2008-11-28 | 주식회사 테스 | 실리콘 산화막의 건식 식각 방법 |
US10177002B2 (en) | 2016-04-29 | 2019-01-08 | Applied Materials, Inc. | Methods for chemical etching of silicon |
CN113506731A (zh) * | 2016-10-08 | 2021-10-15 | 北京北方华创微电子装备有限公司 | 一种集成电路的制造工艺 |
US11715641B2 (en) * | 2018-09-13 | 2023-08-01 | Central Glass Company, Limited | Method and device for etching silicon oxide |
-
2019
- 2019-09-02 US US17/272,742 patent/US11715641B2/en active Active
- 2019-09-02 JP JP2020500676A patent/JP6700571B1/ja active Active
- 2019-09-02 KR KR1020217010411A patent/KR102352038B1/ko active IP Right Grant
- 2019-09-02 WO PCT/JP2019/034427 patent/WO2020054476A1/ja active Application Filing
- 2019-09-02 TW TW108131568A patent/TWI736966B/zh active
- 2019-09-02 TW TW110126667A patent/TWI828998B/zh active
- 2019-09-02 KR KR1020227001058A patent/KR20220011212A/ko not_active Application Discontinuation
- 2019-09-02 CN CN201980051482.4A patent/CN112534550A/zh active Pending
-
2020
- 2020-04-22 JP JP2020076054A patent/JP7352809B2/ja active Active
-
2023
- 2023-05-10 US US18/195,570 patent/US20230274944A1/en active Pending
- 2023-09-11 JP JP2023147210A patent/JP2023158220A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02256235A (ja) * | 1988-12-27 | 1990-10-17 | Toshiba Corp | 表面処理方法 |
WO2007049510A1 (ja) * | 2005-10-27 | 2007-05-03 | Tokyo Electron Limited | 処理方法及び記録媒体 |
US20090275205A1 (en) * | 2008-05-02 | 2009-11-05 | Micron Technology, Inc. | Methods of removing silicon oxide and gaseous mixtures for achieving same |
JP2018026566A (ja) * | 2016-08-10 | 2018-02-15 | 東京エレクトロン株式会社 | ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102590870B1 (ko) * | 2020-04-10 | 2023-10-19 | 주식회사 히타치하이테크 | 에칭 방법 |
KR20210126542A (ko) * | 2020-04-10 | 2021-10-20 | 주식회사 히타치하이테크 | 에칭 방법 |
CN113785382A (zh) * | 2020-04-10 | 2021-12-10 | 株式会社日立高新技术 | 蚀刻方法 |
JPWO2021205632A1 (ja) * | 2020-04-10 | 2021-10-14 | ||
US20220115239A1 (en) * | 2020-04-10 | 2022-04-14 | Hitachi High-Tech Corporation | Etching method |
JP7065254B2 (ja) | 2020-04-10 | 2022-05-11 | 株式会社日立ハイテク | エッチング方法 |
CN113785382B (zh) * | 2020-04-10 | 2023-10-27 | 株式会社日立高新技术 | 蚀刻方法 |
WO2021220834A1 (ja) * | 2020-04-28 | 2021-11-04 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
WO2021221036A1 (ja) * | 2020-04-28 | 2021-11-04 | セントラル硝子株式会社 | 組成物の供給方法、組成物及びドライエッチング方法 |
JP7472634B2 (ja) | 2020-04-28 | 2024-04-23 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
CN113675080A (zh) * | 2020-05-15 | 2021-11-19 | 东京毅力科创株式会社 | 蚀刻方法和蚀刻装置 |
KR20220020205A (ko) * | 2020-08-11 | 2022-02-18 | 도쿄엘렉트론가부시키가이샤 | 실리콘 산화막을 에칭하는 방법, 장치 및 시스템 |
KR102650417B1 (ko) | 2020-08-11 | 2024-03-21 | 도쿄엘렉트론가부시키가이샤 | 실리콘 산화막을 에칭하는 방법, 장치 및 시스템 |
JP7311652B2 (ja) | 2021-03-09 | 2023-07-19 | 株式会社日立ハイテク | エッチング方法 |
JP2022138115A (ja) * | 2021-03-09 | 2022-09-22 | 株式会社日立ハイテク | エッチング方法 |
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KR102352038B1 (ko) | 2022-01-17 |
US20230274944A1 (en) | 2023-08-31 |
CN112534550A (zh) | 2021-03-19 |
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TW202022159A (zh) | 2020-06-16 |
US20210375634A1 (en) | 2021-12-02 |
KR20210055078A (ko) | 2021-05-14 |
TW202205425A (zh) | 2022-02-01 |
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