JP2009514238A - 半導体接合部に薄膜物質を選択的に堆積させる方法 - Google Patents

半導体接合部に薄膜物質を選択的に堆積させる方法 Download PDF

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JP2009514238A
JP2009514238A JP2008538171A JP2008538171A JP2009514238A JP 2009514238 A JP2009514238 A JP 2009514238A JP 2008538171 A JP2008538171 A JP 2008538171A JP 2008538171 A JP2008538171 A JP 2008538171A JP 2009514238 A JP2009514238 A JP 2009514238A
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concentration
substrate
range
layer
metal
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JP2009514238A5 (https=
Inventor
マイケル， ピー． スチュワート，
ティモシー ダブリュー． ウェイドマン，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2008538171A 2005-10-28 2006-10-26 半導体接合部に薄膜物質を選択的に堆積させる方法 Pending JP2009514238A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US73162405P 2005-10-28 2005-10-28
US11/385,041 US20070099806A1 (en) 2005-10-28 2006-03-20 Composition and method for selectively removing native oxide from silicon-containing surfaces
PCT/US2006/060273 WO2007111679A2 (en) 2005-10-28 2006-10-26 Method of selectively depositing a thin film material at a semiconductor interface

Publications (2)

Publication Number Publication Date
JP2009514238A true JP2009514238A (ja) 2009-04-02
JP2009514238A5 JP2009514238A5 (https=) 2009-12-03

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JP2008538171A Pending JP2009514238A (ja) 2005-10-28 2006-10-26 半導体接合部に薄膜物質を選択的に堆積させる方法

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US (2) US20070099806A1 (https=)
JP (1) JP2009514238A (https=)
WO (1) WO2007111679A2 (https=)

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WO2011078399A1 (ja) * 2009-12-25 2011-06-30 独立行政法人科学技術振興機構 結晶性コバルトシリサイド膜の形成方法
WO2019067315A1 (en) * 2017-09-26 2019-04-04 Applied Materials, Inc. METHOD, MATERIALS AND PROCESSES FOR REMOVING NATIVE OXIDE AND REFORMING DIELECTRIC OXIDES, ENABLING BETTER BIOSPER PERFORMANCE
KR20200126011A (ko) * 2018-03-26 2020-11-05 램 리써치 코포레이션 금속 상호접속 층을 위한 중간 층

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WO2011078399A1 (ja) * 2009-12-25 2011-06-30 独立行政法人科学技術振興機構 結晶性コバルトシリサイド膜の形成方法
JP5445795B2 (ja) * 2009-12-25 2014-03-19 独立行政法人科学技術振興機構 結晶性コバルトシリサイド膜の形成方法
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WO2019067315A1 (en) * 2017-09-26 2019-04-04 Applied Materials, Inc. METHOD, MATERIALS AND PROCESSES FOR REMOVING NATIVE OXIDE AND REFORMING DIELECTRIC OXIDES, ENABLING BETTER BIOSPER PERFORMANCE
US11598000B2 (en) 2017-09-26 2023-03-07 Applied Materials, Inc. Method, materials and process for native oxide removal and regrowth of dielectric oxides for better biosensor performance
KR20200126011A (ko) * 2018-03-26 2020-11-05 램 리써치 코포레이션 금속 상호접속 층을 위한 중간 층
KR102889275B1 (ko) * 2018-03-26 2025-11-20 램 리써치 코포레이션 금속 상호접속 층을 위한 중간 층

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