JP2009506574A - Nmosトランジスタおよびpmosトランジスタに凹んだ歪みのあるドレイン/ソース領域を形成する技術 - Google Patents
Nmosトランジスタおよびpmosトランジスタに凹んだ歪みのあるドレイン/ソース領域を形成する技術 Download PDFInfo
- Publication number
- JP2009506574A JP2009506574A JP2008529111A JP2008529111A JP2009506574A JP 2009506574 A JP2009506574 A JP 2009506574A JP 2008529111 A JP2008529111 A JP 2008529111A JP 2008529111 A JP2008529111 A JP 2008529111A JP 2009506574 A JP2009506574 A JP 2009506574A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- semiconductor
- layer
- semiconductor layer
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005516 engineering process Methods 0.000 title description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 127
- 238000000034 method Methods 0.000 claims description 123
- 230000008569 process Effects 0.000 claims description 90
- 239000000463 material Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 4
- 230000000116 mitigating effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 27
- 239000010703 silicon Substances 0.000 abstract description 27
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052732 germanium Inorganic materials 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 14
- 230000009931 harmful effect Effects 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 abstract description 3
- 125000006850 spacer group Chemical group 0.000 description 30
- 238000002513 implantation Methods 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 22
- 239000000758 substrate Substances 0.000 description 16
- 239000002019 doping agent Substances 0.000 description 12
- 238000013461 design Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000005280 amorphization Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 230000035882 stress Effects 0.000 description 8
- 238000013459 approach Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000002178 crystalline material Substances 0.000 description 3
- 230000006355 external stress Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000008570 general process Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
チャネル領域の伝導性、すなわち、伝導性チャネルの駆動電流の容量は、チャネル領域の上方に形成され、薄い絶縁層によってチャネル領域から分離されたゲート電極によって制御される。
例えば、チャネル領域に引張歪みを生成することで電子の移動度が増加する。ここでは、引張歪みの大きさおよび方向に応じて、移動度を50%あるいはそれ以上増加させることができ、これに対応して導電性度が増加し得る。他方では、チャネル領域の圧縮歪みにより正孔移動度が増加し、これにより、P型トランジスタのパフォーマンスを強化する可能性が与えられる。集積回路の製造に応力や歪み技術を導入することは、将来のデバイス世代にとって非常に有望なアプローチである。その理由は、例えば、歪みのあるシリコンは、”新たな”種類のシリコン材料として考えられ、これにより、高額な半導体材料および製造技術を必要とせずに、高速でパワフルな半導体デバイスの製造が可能になり得るからである。
NMOSトランジスタ内の歪みを変化させることで、ドレインとソース領域および拡張領域内の半導体材料が実質的に緩和され、これにより、実質的に歪みのない領域が形成される。さらに、実質的に緩和された半導体層によりバンドギャップもまた変更され、これにより、NMOSトランジスタの拡張領域だけではなくドレインおよびソース領域の抵抗率も変更される。この結果、NMOSトランジスタでは、電流駆動容量についてのパフォーマンスゲインが得られる。これにより、PMOSおよびNMOSトランジスタの電流駆動容量が非対称であることを考慮した回路設計を実質的に維持することが可能となる。何故なら、正孔移動度が向上することでPMOSトランジスタのパフォーマンスがさらによくなり、この結果、NMOSトランジスタのソースおよびドレインの接触抵抗が低下することで、起動容量がこれに対応して、あるいは実質的に対応して増加するからである。したがって、全体のパフォーマンスは、上述の非対称性を考慮した現在の既存の設計に対しても実質的に向上され得る。
しかし、本発明は、SOIデバイスと組み合わせて、具体的には、一部空乏型のトランジスタ素子と組み合わせると非常に有利であるが、本発明はさらに、バルクシリコン基板や任意の他の適切なキャリアに形成されたトランジスタなどの他のトランジスタアーキテクチャと組み合わせて有利に適用することができることが分かる。従って、本発明は、詳細な説明および添付の請求項に明確に記載されていない限り、SOIデバイスに制限されるものではない。
アクティブ領域111および121の厚みは、トランジスタ110、120に対する特定の設計ルールに適応した厚みであってもよい。1つの例示的実施形態においては、このアクティブ領域111、121は、一部空乏型のトランジスタ素子を形成できるように設計されており、一方で他の実施形態では、厚みは完全空乏型デバイスの形成に適するものであってもよい。さらに、アクティブ領域111、121は分離され、これにより、対応の分離構造103によって相互から電気的に絶縁される。このような分離構造は、シャロートレンチアイソレーション(STI)または任意の他の適切な絶縁構造の形式で設けられてもよい。この分離構造103は、二酸化シリコン、窒化シリコンなどの任意の適切な材料から形成されてもよい。
別の実施形態においては、層127の実質的にアモルファス化した構造を維持し、実質的にアモルファス化した結晶ベースで拡張部129eとドレインおよびソース領域129とを形成するようにそれぞれの注入プロセスを実行し、この結果、チャネル効果の低減によりドーパントプロファイルが強化する一方、これと同時にドーパントを活性化する後続のアニールサイクルにおいて、再結晶効果を向上させることができるようにすることが有利である。
Claims (13)
- 第1のタイプの第1トランジスタ(110、120)のゲート電極(112、212)に隣接して第1リセス(116、216)を形成するステップと、
前記第1のタイプとは異なる第2のタイプの第2トランジスタ(120、220)のゲート電極(122、222)に隣接して第2リセス(126、226)を形成するステップと、
前記第1および第2リセス(116、216、126、226)に歪み半導体層(117、217、127、227)を選択的に形成するステップと、
歪みを低減するように、前記第2リセス(126、226)の前記歪み半導体層(127、227)を選択的に変質させるステップと、を含む方法。 - 前記歪み半導体層(127)を変質させるステップは、イオン注入(107)によって前記第2リセス(126)の前記歪みを緩和させるステップを含む、請求項1記載の方法。
- 前記歪み半導体層(227)を変質させるステップは、前記第2リセス(226)内の前記半導体層(227)をアモルファス化するステップ(207)と、前記アモルファス化した半導体層(227)を実質的に再結晶化するアニールプロセスを実行するステップと、を含む、請求項1記載の方法。
- 絶縁層(102、202)上に形成される半導体の結晶ボディ(111、121、211、221)の上方に、前記第1トランジスタ(110、210)の前記ゲート電極(112、212)と前記第2トランジスタ(120、220)の第2ゲート電極(122、222)とを形成するステップをさらに含む、請求項1記載の方法。
- 前記第1および第2リセス(116、126)を充填する前記半導体層(117、127)の少なくとも一部に、前記第1および第2トランジスタ(110、120)のドレインおよびソース領域(119、129)と拡張領域(119E、129E)とを形成するステップをさらに含む、請求項1記載の方法。
- 前記歪み半導体層(227)を形成する前に、前記第2ゲート電極(222)に隣接して、半導体(221A)のボディ部の一部を実質的にアモルファス化するステップをさらに含む、請求項1記載の方法。
- 前記第2リセス(226)は、前記アモルファス化した部分(221A)に形成される、請求項6記載の方法。
- 前記部分は、前記第1および第2リセス(216、226)を形成後にアモルファス化される、請求項6記載の方法。
- 前記部分(221A)と前記第2半導体層(227)とを実質的に再結晶化するように、アニールプロセスを実行するステップをさらに含む、請求項6記載の方法。
- 前記第1および第2リセス(116、126、216、226)を形成する前に、エッチストップ層(114、115、124、125、214、215、224、225)で前記第1および第2トランジスタのゲート電極(112、212、122、222)をカプセル化するステップをさらに含む、請求項1記載の方法。
- 特定の半導体材料の歪み層(117、217)を含む第1導電型の第1トランジスタ(110、210)をその拡張領域(119E)とソースおよびドレイン領域(119)とに含み、
前記特定の半導体材料の実質的に緩和された層(127、227)を含む第2導電型の第2トランジスタ(120、220)をその拡張領域(129E)とソースおよびドレイン領域(129)に含む、半導体デバイス(100、200)。 - 第1および第2トランジスタ(110、210、120、220)が形成された埋め込み絶縁層(102、202)をさらに含む、請求項11記載の半導体デバイス(100、200)。
- 前記第1および第2トランジスタ(110,210、120、220)は一部空乏型トランジスタを表す、請求項12記載の半導体デバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005041225A DE102005041225B3 (de) | 2005-08-31 | 2005-08-31 | Verfahren zur Herstellung vertiefter verformter Drain/Source-Gebiete in NMOS- und PMOS-Transistoren |
DE102005041225.4 | 2005-08-31 | ||
US11/420,091 | 2006-05-24 | ||
US11/420,091 US7586153B2 (en) | 2005-08-31 | 2006-05-24 | Technique for forming recessed strained drain/source regions in NMOS and PMOS transistors |
PCT/US2006/032743 WO2007027473A2 (en) | 2005-08-31 | 2006-08-23 | Technique for forming recessed strained drain/source in nmos and pmos transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009506574A true JP2009506574A (ja) | 2009-02-12 |
JP4937263B2 JP4937263B2 (ja) | 2012-05-23 |
Family
ID=37802867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008529111A Active JP4937263B2 (ja) | 2005-08-31 | 2006-08-23 | Nmosトランジスタおよびpmosトランジスタに凹んだ歪みのあるドレイン/ソース領域を形成する技術 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7586153B2 (ja) |
JP (1) | JP4937263B2 (ja) |
KR (1) | KR101287617B1 (ja) |
CN (1) | CN101253619B (ja) |
DE (1) | DE102005041225B3 (ja) |
GB (1) | GB2444198B (ja) |
TW (1) | TWI420602B (ja) |
WO (1) | WO2007027473A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009529803A (ja) * | 2006-03-31 | 2009-08-20 | インテル コーポレイション | 電界効果型トランジスタにおけるコンタクト抵抗を減少させるエピタキシャルシリコンゲルマニウム |
JP2010287760A (ja) * | 2009-06-12 | 2010-12-24 | Sony Corp | 半導体装置およびその製造方法 |
JP2012134514A (ja) * | 2007-12-31 | 2012-07-12 | Mediatek Inc | マイクロローディング効果を軽減するためのSiGe埋め込みダミーパターンを備えたSiGe装置 |
JP2012142494A (ja) * | 2011-01-05 | 2012-07-26 | Takehide Shirato | 半導体装置及びその製造方法 |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006019937B4 (de) * | 2006-04-28 | 2010-11-25 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines SOI-Transistors mit eingebetteter Verformungsschicht und einem reduzierten Effekt des potentialfreien Körpers |
US7468313B2 (en) * | 2006-05-30 | 2008-12-23 | Freescale Semiconductor, Inc. | Engineering strain in thick strained-SOI substrates |
KR100734088B1 (ko) * | 2006-05-30 | 2007-07-02 | 주식회사 하이닉스반도체 | 트랜지스터의 제조방법 |
JP2008072032A (ja) * | 2006-09-15 | 2008-03-27 | Toshiba Corp | 半導体装置の製造方法 |
US7494886B2 (en) * | 2007-01-12 | 2009-02-24 | International Business Machines Corporation | Uniaxial strain relaxation of biaxial-strained thin films using ion implantation |
US20080237811A1 (en) * | 2007-03-30 | 2008-10-02 | Rohit Pal | Method for preserving processing history on a wafer |
US7741658B2 (en) * | 2007-08-21 | 2010-06-22 | International Business Machines Corporation | Self-aligned super stressed PFET |
US7892932B2 (en) * | 2008-03-25 | 2011-02-22 | International Business Machines Corporation | Semiconductor devices having tensile and/or compressive strain and methods of manufacturing and design structure |
US7838372B2 (en) * | 2008-05-22 | 2010-11-23 | Infineon Technologies Ag | Methods of manufacturing semiconductor devices and structures thereof |
DE102008035816B4 (de) * | 2008-07-31 | 2011-08-25 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 | Leistungssteigerung in PMOS- und NMOS-Transistoren durch Verwendung eines eingebetteten verformten Halbleitermaterials |
DE102008045034B4 (de) * | 2008-08-29 | 2012-04-05 | Advanced Micro Devices, Inc. | Durchlassstromeinstellung für Transistoren, die im gleichen aktiven Gebiet hergestellt sind, durch lokales Vorsehen eines eingebetteten verformungsinduzierenden Halbleitermaterials in dem aktiven Gebiet |
US7670934B1 (en) * | 2009-01-26 | 2010-03-02 | Globalfoundries Inc. | Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regions |
KR101552938B1 (ko) | 2009-02-02 | 2015-09-14 | 삼성전자주식회사 | 스트레스 생성층을 갖는 반도체 소자의 제조방법 |
US7929343B2 (en) * | 2009-04-07 | 2011-04-19 | Micron Technology, Inc. | Methods, devices, and systems relating to memory cells having a floating body |
US8148780B2 (en) * | 2009-03-24 | 2012-04-03 | Micron Technology, Inc. | Devices and systems relating to a memory cell having a floating body |
JP5465907B2 (ja) * | 2009-03-27 | 2014-04-09 | ラピスセミコンダクタ株式会社 | 半導体装置 |
CN101872727A (zh) * | 2009-04-24 | 2010-10-27 | 国碁电子(中山)有限公司 | 一种芯片焊接方法及结构 |
US8487354B2 (en) * | 2009-08-21 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for improving selectivity of epi process |
US8067282B2 (en) * | 2009-10-08 | 2011-11-29 | United Microelectronics Corp. | Method for selective formation of trench |
CN102044496B (zh) * | 2009-10-22 | 2014-02-12 | 联华电子股份有限公司 | 选择性形成沟槽的方法 |
DE102010002450B4 (de) * | 2010-02-26 | 2012-04-26 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Transistoren mit Metallgateelektrodenstrukturen mit großem ε und angepassten Kanalhalbleitermaterialien |
US9064688B2 (en) | 2010-05-20 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Performing enhanced cleaning in the formation of MOS devices |
US9263339B2 (en) | 2010-05-20 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective etching in the formation of epitaxy regions in MOS devices |
US8828850B2 (en) | 2010-05-20 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing variation by using combination epitaxy growth |
CN101872726B (zh) * | 2010-05-28 | 2016-03-23 | 上海华虹宏力半导体制造有限公司 | 半导体器件的制造方法 |
DE102010029532B4 (de) * | 2010-05-31 | 2012-01-26 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Transistor mit eingebettetem verformungsinduzierenden Material, das in diamantförmigen Aussparungen auf der Grundlage einer Voramorphisierung hergestellt ist |
KR101673908B1 (ko) | 2010-07-14 | 2016-11-09 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
DE102010040064B4 (de) * | 2010-08-31 | 2012-04-05 | Globalfoundries Inc. | Verringerte Schwellwertspannungs-Breitenabhängigkeit in Transistoren, die Metallgateelektrodenstrukturen mit großem ε aufweisen |
US20120153350A1 (en) * | 2010-12-17 | 2012-06-21 | Globalfoundries Inc. | Semiconductor devices and methods for fabricating the same |
US8377786B2 (en) * | 2011-02-03 | 2013-02-19 | GlobalFoundries, Inc. | Methods for fabricating semiconductor devices |
US9087741B2 (en) | 2011-07-11 | 2015-07-21 | International Business Machines Corporation | CMOS with dual raised source and drain for NMOS and PMOS |
US9099492B2 (en) | 2012-03-26 | 2015-08-04 | Globalfoundries Inc. | Methods of forming replacement gate structures with a recessed channel |
KR101912582B1 (ko) * | 2012-04-25 | 2018-12-28 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US8872228B2 (en) * | 2012-05-11 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained-channel semiconductor device fabrication |
CN103855096B (zh) * | 2012-12-04 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管的形成方法 |
US8951877B2 (en) * | 2013-03-13 | 2015-02-10 | Globalfoundries Inc. | Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment |
KR102069275B1 (ko) | 2013-06-07 | 2020-01-22 | 삼성전자주식회사 | 변형된 채널층을 갖는 반도체 소자 및 그 제조 방법 |
CN104465388A (zh) * | 2013-09-23 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | 嵌入式源/漏极mos晶体管的制造方法 |
JP6275559B2 (ja) * | 2014-06-13 | 2018-02-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US20150372100A1 (en) * | 2014-06-19 | 2015-12-24 | GlobalFoundries, Inc. | Integrated circuits having improved contacts and methods for fabricating same |
FR3023972B1 (fr) * | 2014-07-18 | 2016-08-19 | Commissariat Energie Atomique | Procede de fabrication d'un transistor dans lequel le niveau de contrainte applique au canal est augmente |
KR102192571B1 (ko) | 2014-12-04 | 2020-12-17 | 삼성전자주식회사 | 버퍼 층을 갖는 반도체 소자 및 그 형성 방법 |
FR3034909B1 (fr) | 2015-04-09 | 2018-02-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de dopage des regions de source et de drain d'un transistor a l'aide d'une amorphisation selective |
US9972622B2 (en) | 2015-05-13 | 2018-05-15 | Imec Vzw | Method for manufacturing a CMOS device and associated device |
US9711533B2 (en) * | 2015-10-16 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereof |
CN106960792B (zh) * | 2016-01-11 | 2019-12-03 | 中芯国际集成电路制造(上海)有限公司 | Nmos晶体管及其形成方法 |
CN107104051B (zh) * | 2016-02-22 | 2021-06-29 | 联华电子股份有限公司 | 半导体元件以及其制作方法 |
US10573749B2 (en) * | 2016-02-25 | 2020-02-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin-type field effect transistor structure and manufacturing method thereof |
US10304957B2 (en) * | 2016-09-13 | 2019-05-28 | Qualcomm Incorporated | FinFET with reduced series total resistance |
WO2019182261A1 (ko) * | 2018-03-23 | 2019-09-26 | 홍잉 | 단결정립 나노와이어 제조 방법 및 이를 적용하는 반도체 소자의 제조 방법 |
WO2019182264A1 (ko) | 2018-03-23 | 2019-09-26 | 홍잉 | 수직 나노와이어 반도체 소자 및 그 제조 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002043151A1 (en) * | 2000-11-22 | 2002-05-30 | Hitachi, Ltd | Semiconductor device and method for fabricating the same |
JP2002343880A (ja) * | 2001-05-17 | 2002-11-29 | Sharp Corp | 半導体基板及びその製造方法ならびに半導体装置及びその製造方法 |
JP2003109969A (ja) * | 2001-09-28 | 2003-04-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004214440A (ja) * | 2003-01-06 | 2004-07-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2005217391A (ja) * | 2003-10-31 | 2005-08-11 | Internatl Business Mach Corp <Ibm> | 高移動度ヘテロ接合相補型電界効果トランジスタおよびその方法 |
JP2006165480A (ja) * | 2004-12-10 | 2006-06-22 | Toshiba Corp | 半導体装置 |
JP2006253318A (ja) * | 2005-03-09 | 2006-09-21 | Fujitsu Ltd | pチャネルMOSトランジスタおよびその製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6723621B1 (en) | 1997-06-30 | 2004-04-20 | International Business Machines Corporation | Abrupt delta-like doping in Si and SiGe films by UHV-CVD |
US6274894B1 (en) * | 1999-08-17 | 2001-08-14 | Advanced Micro Devices, Inc. | Low-bandgap source and drain formation for short-channel MOS transistors |
US6541343B1 (en) | 1999-12-30 | 2003-04-01 | Intel Corporation | Methods of making field effect transistor structure with partially isolated source/drain junctions |
US6495402B1 (en) * | 2001-02-06 | 2002-12-17 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture |
US6921913B2 (en) * | 2003-03-04 | 2005-07-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel transistor structure with lattice-mismatched zone |
US20040262683A1 (en) * | 2003-06-27 | 2004-12-30 | Bohr Mark T. | PMOS transistor strain optimization with raised junction regions |
US6891192B2 (en) * | 2003-08-04 | 2005-05-10 | International Business Machines Corporation | Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions |
US20050035369A1 (en) * | 2003-08-15 | 2005-02-17 | Chun-Chieh Lin | Structure and method of forming integrated circuits utilizing strained channel transistors |
US6849527B1 (en) * | 2003-10-14 | 2005-02-01 | Advanced Micro Devices | Strained silicon MOSFET having improved carrier mobility, strained silicon CMOS device, and methods of their formation |
US6989322B2 (en) * | 2003-11-25 | 2006-01-24 | International Business Machines Corporation | Method of forming ultra-thin silicidation-stop extensions in mosfet devices |
US20050186722A1 (en) * | 2004-02-25 | 2005-08-25 | Kuan-Lun Cheng | Method and structure for CMOS device with stress relaxed by ion implantation of carbon or oxygen containing ions |
US7026232B1 (en) * | 2004-12-23 | 2006-04-11 | Texas Instruments Incorporated | Systems and methods for low leakage strained-channel transistor |
US7348232B2 (en) * | 2005-03-01 | 2008-03-25 | Texas Instruments Incorporated | Highly activated carbon selective epitaxial process for CMOS |
DE102005030583B4 (de) * | 2005-06-30 | 2010-09-30 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung von Kontaktisolationsschichten und Silizidgebieten mit unterschiedlichen Eigenschaften eines Halbleiterbauelements und Halbleiterbauelement |
US20070010073A1 (en) * | 2005-07-06 | 2007-01-11 | Chien-Hao Chen | Method of forming a MOS device having a strained channel region |
US7566605B2 (en) * | 2006-03-31 | 2009-07-28 | Intel Corporation | Epitaxial silicon germanium for reduced contact resistance in field-effect transistors |
-
2005
- 2005-08-31 DE DE102005041225A patent/DE102005041225B3/de active Active
-
2006
- 2006-05-24 US US11/420,091 patent/US7586153B2/en active Active
- 2006-08-17 TW TW095130211A patent/TWI420602B/zh active
- 2006-08-23 WO PCT/US2006/032743 patent/WO2007027473A2/en active Application Filing
- 2006-08-23 GB GB0804446A patent/GB2444198B/en active Active
- 2006-08-23 CN CN2006800313724A patent/CN101253619B/zh active Active
- 2006-08-23 KR KR1020087007854A patent/KR101287617B1/ko active IP Right Grant
- 2006-08-23 JP JP2008529111A patent/JP4937263B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002043151A1 (en) * | 2000-11-22 | 2002-05-30 | Hitachi, Ltd | Semiconductor device and method for fabricating the same |
JP2002343880A (ja) * | 2001-05-17 | 2002-11-29 | Sharp Corp | 半導体基板及びその製造方法ならびに半導体装置及びその製造方法 |
JP2003109969A (ja) * | 2001-09-28 | 2003-04-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004214440A (ja) * | 2003-01-06 | 2004-07-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2005217391A (ja) * | 2003-10-31 | 2005-08-11 | Internatl Business Mach Corp <Ibm> | 高移動度ヘテロ接合相補型電界効果トランジスタおよびその方法 |
JP2006165480A (ja) * | 2004-12-10 | 2006-06-22 | Toshiba Corp | 半導体装置 |
JP2006253318A (ja) * | 2005-03-09 | 2006-09-21 | Fujitsu Ltd | pチャネルMOSトランジスタおよびその製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009529803A (ja) * | 2006-03-31 | 2009-08-20 | インテル コーポレイション | 電界効果型トランジスタにおけるコンタクト抵抗を減少させるエピタキシャルシリコンゲルマニウム |
JP2012134514A (ja) * | 2007-12-31 | 2012-07-12 | Mediatek Inc | マイクロローディング効果を軽減するためのSiGe埋め込みダミーパターンを備えたSiGe装置 |
JP2010287760A (ja) * | 2009-06-12 | 2010-12-24 | Sony Corp | 半導体装置およびその製造方法 |
US9337305B2 (en) | 2009-06-12 | 2016-05-10 | Sony Corporation | Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions |
US9601622B2 (en) | 2009-06-12 | 2017-03-21 | Sony Corporation | Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions |
US9947790B2 (en) | 2009-06-12 | 2018-04-17 | Sony Corporation | Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions |
US10269961B2 (en) | 2009-06-12 | 2019-04-23 | Sony Corporation | Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions |
US10535769B2 (en) | 2009-06-12 | 2020-01-14 | Sony Corporation | Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions |
US10854751B2 (en) | 2009-06-12 | 2020-12-01 | Sony Corporation | Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions |
JP2012142494A (ja) * | 2011-01-05 | 2012-07-26 | Takehide Shirato | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
GB0804446D0 (en) | 2008-04-16 |
CN101253619B (zh) | 2011-04-13 |
WO2007027473A2 (en) | 2007-03-08 |
WO2007027473A3 (en) | 2007-04-19 |
KR101287617B1 (ko) | 2013-07-23 |
JP4937263B2 (ja) | 2012-05-23 |
DE102005041225B3 (de) | 2007-04-26 |
CN101253619A (zh) | 2008-08-27 |
TW200715417A (en) | 2007-04-16 |
US20070045729A1 (en) | 2007-03-01 |
TWI420602B (zh) | 2013-12-21 |
GB2444198B (en) | 2009-04-01 |
GB2444198A (en) | 2008-05-28 |
US7586153B2 (en) | 2009-09-08 |
KR20080041737A (ko) | 2008-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4937263B2 (ja) | Nmosトランジスタおよびpmosトランジスタに凹んだ歪みのあるドレイン/ソース領域を形成する技術 | |
US7579262B2 (en) | Different embedded strain layers in PMOS and NMOS transistors and a method of forming the same | |
JP5795260B2 (ja) | 段階的な形状の構造を有する埋め込み歪誘起材質を伴うトランジスタ | |
JP5204645B2 (ja) | 強化した応力伝送効率でコンタクト絶縁層を形成する技術 | |
TWI438847B (zh) | 阻止電晶體閘電極之預非晶化 | |
US7344984B2 (en) | Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistors | |
US7696052B2 (en) | Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions | |
US7329571B2 (en) | Technique for providing multiple stress sources in NMOS and PMOS transistors | |
JP5204763B2 (ja) | 埋め込み歪み層を有してフローティングボディ効果が減少されたsoiトランジスタの製造方法 | |
US8574991B2 (en) | Asymmetric transistor devices formed by asymmetric spacers and tilted implantation | |
US20070123010A1 (en) | Technique for reducing crystal defects in strained transistors by tilted preamorphization | |
JP5544367B2 (ja) | トランジスタにおいて進歩したシリサイド形成と組み合わされる凹型のドレイン及びソース区域 | |
US20090218633A1 (en) | Cmos device comprising an nmos transistor with recessed drain and source areas and a pmos transistor having a silicon/germanium material in the drain and source areas | |
JP2009514249A (ja) | 薄層soiトランジスタに埋め込まれた歪み層ならびにその形成法 | |
US20100081244A1 (en) | Transistor device comprising an asymmetric embedded semiconductor alloy | |
US8198152B2 (en) | Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials | |
JP2009545880A (ja) | パフォーマンス強化材料組成を含む歪みチャネル領域を有するトランジスタ | |
JP5798923B2 (ja) | 基板全域にわたって高められた均一性を有する埋め込みSi/Ge材質を伴うトランジスタ | |
US9450073B2 (en) | SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent thereto | |
WO2010049086A2 (en) | Recessed drain and source areas in combination with advanced silicide formation in transistors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090813 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100421 |
|
RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20100902 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110902 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110914 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120201 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120221 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4937263 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |