JP2009283930A5 - - Google Patents

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Publication number
JP2009283930A5
JP2009283930A5 JP2009104651A JP2009104651A JP2009283930A5 JP 2009283930 A5 JP2009283930 A5 JP 2009283930A5 JP 2009104651 A JP2009104651 A JP 2009104651A JP 2009104651 A JP2009104651 A JP 2009104651A JP 2009283930 A5 JP2009283930 A5 JP 2009283930A5
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JP
Japan
Prior art keywords
semiconductor layer
layer
gate insulating
contact
insulating layer
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Application number
JP2009104651A
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English (en)
Japanese (ja)
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JP2009283930A (ja
JP5426225B2 (ja
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Priority to JP2009104651A priority Critical patent/JP5426225B2/ja
Priority claimed from JP2009104651A external-priority patent/JP5426225B2/ja
Publication of JP2009283930A publication Critical patent/JP2009283930A/ja
Publication of JP2009283930A5 publication Critical patent/JP2009283930A5/ja
Application granted granted Critical
Publication of JP5426225B2 publication Critical patent/JP5426225B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009104651A 2008-04-25 2009-04-23 薄膜トランジスタ Expired - Fee Related JP5426225B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009104651A JP5426225B2 (ja) 2008-04-25 2009-04-23 薄膜トランジスタ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008115357 2008-04-25
JP2008115357 2008-04-25
JP2009104651A JP5426225B2 (ja) 2008-04-25 2009-04-23 薄膜トランジスタ

Publications (3)

Publication Number Publication Date
JP2009283930A JP2009283930A (ja) 2009-12-03
JP2009283930A5 true JP2009283930A5 (enExample) 2012-05-17
JP5426225B2 JP5426225B2 (ja) 2014-02-26

Family

ID=41214102

Family Applications (1)

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JP2009104651A Expired - Fee Related JP5426225B2 (ja) 2008-04-25 2009-04-23 薄膜トランジスタ

Country Status (2)

Country Link
US (1) US8049215B2 (enExample)
JP (1) JP5426225B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821012B2 (en) * 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
US8039842B2 (en) * 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor
WO2009157573A1 (en) 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, semiconductor device and electronic device
WO2009157574A1 (en) * 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5498762B2 (ja) * 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5384088B2 (ja) * 2008-11-28 2014-01-08 株式会社ジャパンディスプレイ 表示装置
US8772627B2 (en) * 2009-08-07 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
WO2011145149A1 (ja) * 2010-05-20 2011-11-24 パナソニック株式会社 表示用薄膜半導体装置の製造方法
KR101856722B1 (ko) * 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
TWI476931B (zh) * 2010-10-21 2015-03-11 Au Optronics Corp 薄膜電晶體與具有此薄膜電晶體的畫素結構
US8389416B2 (en) * 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
TWI584383B (zh) * 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102088462B1 (ko) 2013-07-03 2020-05-28 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP2017017208A (ja) * 2015-07-02 2017-01-19 株式会社ジャパンディスプレイ 半導体装置
EP4181214A4 (en) * 2020-07-07 2024-01-03 Toppan Inc. Thin film transistor, thin film transistor array, and thin film transistor production method

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JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5091334A (en) 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2839529B2 (ja) 1989-02-17 1998-12-16 株式会社東芝 薄膜トランジスタ
US5221631A (en) 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
JPH05129608A (ja) 1991-10-31 1993-05-25 Sharp Corp 半導体装置
EP0535979A3 (en) 1991-10-02 1993-07-21 Sharp Kabushiki Kaisha A thin film transistor and a method for producing the same
JPH05190857A (ja) * 1992-01-10 1993-07-30 Toshiba Corp 薄膜トランジスタ
JPH07131030A (ja) 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
US5677236A (en) 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
US5920772A (en) 1997-06-27 1999-07-06 Industrial Technology Research Institute Method of fabricating a hybrid polysilicon/amorphous silicon TFT
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
GB0017471D0 (en) * 2000-07-18 2000-08-30 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
TW577176B (en) * 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP4480968B2 (ja) 2003-07-18 2010-06-16 株式会社半導体エネルギー研究所 表示装置
JP5159021B2 (ja) 2003-12-02 2013-03-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI372463B (en) 2003-12-02 2012-09-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
WO2007080575A1 (en) * 2006-01-09 2007-07-19 Technion Research And Development Foundation Ltd. Transistor structures and methods of fabrication thereof
JP2008140984A (ja) * 2006-12-01 2008-06-19 Sharp Corp 半導体素子、半導体素子の製造方法、及び表示装置
US7786485B2 (en) 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7812348B2 (en) 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
US7821012B2 (en) 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5411528B2 (ja) * 2008-03-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタ及び表示装置
JP5416460B2 (ja) 2008-04-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタおよび薄膜トランジスタの作製方法
CN102007586B (zh) 2008-04-18 2013-09-25 株式会社半导体能源研究所 薄膜晶体管及其制造方法
WO2009128553A1 (en) 2008-04-18 2009-10-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
JP5436017B2 (ja) 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置

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