JP2009272453A - トランジスタ、半導体装置及びその製造方法 - Google Patents

トランジスタ、半導体装置及びその製造方法 Download PDF

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Publication number
JP2009272453A
JP2009272453A JP2008121920A JP2008121920A JP2009272453A JP 2009272453 A JP2009272453 A JP 2009272453A JP 2008121920 A JP2008121920 A JP 2008121920A JP 2008121920 A JP2008121920 A JP 2008121920A JP 2009272453 A JP2009272453 A JP 2009272453A
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layer
impurity
region
semiconductor
semiconductor substrate
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JP2008121920A
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Japanese (ja)
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JP2009272453A5 (https=
Inventor
Yasuhiro Takeda
安弘 武田
Seiji Otake
誠治 大竹
Kazunori Fujita
和範 藤田
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Sanyo Electric Co Ltd
System Solutions Co Ltd
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Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
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Priority to JP2008121920A priority Critical patent/JP2009272453A/ja
Priority to US12/434,128 priority patent/US8022475B2/en
Publication of JP2009272453A publication Critical patent/JP2009272453A/ja
Publication of JP2009272453A5 publication Critical patent/JP2009272453A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/016—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/835—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising LDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/837—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising vertical IGFETs
    • H10D84/839—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising vertical IGFETs comprising VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H10D64/0133—Aspects related to lithography, isolation or planarisation of the conductor at least part of the entire electrode being a sidewall spacer, being formed by transformation under a mask or being formed by plating at a sidewall
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008121920A 2008-05-08 2008-05-08 トランジスタ、半導体装置及びその製造方法 Pending JP2009272453A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008121920A JP2009272453A (ja) 2008-05-08 2008-05-08 トランジスタ、半導体装置及びその製造方法
US12/434,128 US8022475B2 (en) 2008-05-08 2009-05-01 Semiconductor device optimized to increase withstand voltage and reduce on resistance

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Application Number Priority Date Filing Date Title
JP2008121920A JP2009272453A (ja) 2008-05-08 2008-05-08 トランジスタ、半導体装置及びその製造方法

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JP2009272453A true JP2009272453A (ja) 2009-11-19
JP2009272453A5 JP2009272453A5 (https=) 2011-05-19

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020507211A (ja) * 2017-07-03 2020-03-05 無錫華潤上華科技有限公司Ｃｓｍｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｆａｂ２ Ｃｏ．， Ｌｔｄ． 半導体デバイスのゲート構造および製造方法
JP2021044434A (ja) * 2019-09-12 2021-03-18 株式会社東芝 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928513B (zh) * 2013-01-15 2017-03-29 无锡华润上华半导体有限公司 一种沟槽dmos器件及其制作方法
KR102316160B1 (ko) 2014-12-22 2021-10-26 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
US9391194B1 (en) * 2015-06-19 2016-07-12 Sanken Electric Co., Ltd. High voltage vertical FPMOS fets
US20180076038A1 (en) * 2016-09-09 2018-03-15 Texas Instruments Incorporated Method For Producing Two N-Type Buried Layers In An Integrated Circuit
US11670693B2 (en) * 2021-01-28 2023-06-06 Semiconductor Components Industries, Llc Trench gate field-effect transistors with drain runner

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170571A (ja) * 1988-12-23 1990-07-02 Fujitsu Ltd 半導体装置とその製造方法
JPH07326742A (ja) * 1994-05-30 1995-12-12 Toshiba Corp 半導体装置およびその製造方法
JPH08316467A (ja) * 1995-05-19 1996-11-29 Nissan Motor Co Ltd 溝型半導体装置
JPH10242311A (ja) * 1996-12-27 1998-09-11 Sanken Electric Co Ltd 半導体装置及びその製造方法
US5854099A (en) * 1997-06-06 1998-12-29 National Semiconductor Corporation DMOS process module applicable to an E2 CMOS core process
JP2000188296A (ja) * 1998-12-22 2000-07-04 Sony Corp 半導体装置およびその製造方法
DE19929235A1 (de) * 1999-06-25 2001-01-04 Siemens Ag Vertikaler DMOS-Transistor
JP2003209246A (ja) * 2002-01-16 2003-07-25 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2003303960A (ja) * 2002-04-09 2003-10-24 Sanyo Electric Co Ltd 縦型ｍｏｓ半導体装置およびその製造方法
JP2005536057A (ja) * 2002-08-14 2005-11-24 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッド エピレス基板における分離型の相補型ｍｏｓ装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
US5218224A (en) * 1989-06-14 1993-06-08 Kabushiki Kaisha Toshiba Semiconductor device including inversion preventing layers having a plurality of impurity concentration peaks in direction of depth
US5290714A (en) * 1990-01-12 1994-03-01 Hitachi, Ltd. Method of forming semiconductor device including a CMOS structure having double-doped channel regions
JP2736493B2 (ja) * 1992-04-03 1998-04-02 三菱電機株式会社 半導体装置およびその製造方法
JP3306273B2 (ja) * 1995-10-31 2002-07-24 三洋電機株式会社 半導体集積回路とその製造方法
JP3530414B2 (ja) * 1999-03-26 2004-05-24 三洋電機株式会社 半導体装置
JP2002141476A (ja) * 2000-11-07 2002-05-17 Hitachi Ltd ＢｉＣＭＯＳ半導体集積回路装置およびその製造方法
JP2003303959A (ja) 2002-04-09 2003-10-24 Sanyo Electric Co Ltd 縦型ｍｏｓ半導体装置およびその製造方法
JP3644682B2 (ja) 2002-06-03 2005-05-11 三洋電機株式会社 半導体装置の製造方法
JP3865728B2 (ja) * 2003-12-05 2007-01-10 シャープ株式会社 閾値電圧変調方式のｍｏｓ型固体撮像素子およびその製造方法
US7211829B2 (en) * 2004-03-01 2007-05-01 Matsushita Electric Industrial Co., Ltd Semiconductor photodetector device
JP5307966B2 (ja) * 2005-03-30 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置の製造方法
JP5164333B2 (ja) 2005-12-28 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 半導体装置
TW200847448A (en) * 2007-05-30 2008-12-01 Intersil Inc Junction barrier schottky diode
US20090090981A1 (en) * 2007-10-05 2009-04-09 Kazuhiro Natsuaki Semiconductor device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170571A (ja) * 1988-12-23 1990-07-02 Fujitsu Ltd 半導体装置とその製造方法
JPH07326742A (ja) * 1994-05-30 1995-12-12 Toshiba Corp 半導体装置およびその製造方法
JPH08316467A (ja) * 1995-05-19 1996-11-29 Nissan Motor Co Ltd 溝型半導体装置
JPH10242311A (ja) * 1996-12-27 1998-09-11 Sanken Electric Co Ltd 半導体装置及びその製造方法
US5854099A (en) * 1997-06-06 1998-12-29 National Semiconductor Corporation DMOS process module applicable to an E2 CMOS core process
JP2000188296A (ja) * 1998-12-22 2000-07-04 Sony Corp 半導体装置およびその製造方法
DE19929235A1 (de) * 1999-06-25 2001-01-04 Siemens Ag Vertikaler DMOS-Transistor
JP2003209246A (ja) * 2002-01-16 2003-07-25 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2003303960A (ja) * 2002-04-09 2003-10-24 Sanyo Electric Co Ltd 縦型ｍｏｓ半導体装置およびその製造方法
JP2005536057A (ja) * 2002-08-14 2005-11-24 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッド エピレス基板における分離型の相補型ｍｏｓ装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020507211A (ja) * 2017-07-03 2020-03-05 無錫華潤上華科技有限公司Ｃｓｍｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｆａｂ２ Ｃｏ．， Ｌｔｄ． 半導体デバイスのゲート構造および製造方法
JP2021044434A (ja) * 2019-09-12 2021-03-18 株式会社東芝 半導体装置
JP7157027B2 (ja) 2019-09-12 2022-10-19 株式会社東芝 半導体装置

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US8022475B2 (en) 2011-09-20

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