JP2009231815A - 半導体素子、半導体モジュール、半導体モジュールの製造方法および携帯機器 - Google Patents
半導体素子、半導体モジュール、半導体モジュールの製造方法および携帯機器 Download PDFInfo
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Abstract
【解決手段】半導体モジュール30は、素子搭載用基板10およびこれに搭載された半導体素子50を備える。素子搭載用基板10は、絶縁樹脂層12と、絶縁樹脂層12の一方の主表面S1に設けられた配線層14と、配線層14と電気的に接続され、配線層14から絶縁樹脂層12側に突出している突起電極16とを備える。半導体素子50は、半導体基板51と突起電極16のそれぞれに対向する素子電極52とを有する。素子電極52の上に設けられた金属層55の表面が保護層54の表面と同一面になっている。
【選択図】図1
Description
この態様によれば、保護膜を覆った領域にまで素子電極の平坦部分を拡張できるので、位置ずれマージンを大きく取れることから、突起電極と素子電極との位置ずれによる接続信頼性を向上させることができる。
(実施の形態1)
図1は、実施の形態に係る半導体素子50および半導体モジュール30の構造を示す断面図である。半導体モジュール30は、素子搭載用基板10およびこれに搭載された半導体素子50を備える。
ここで、半導体素子および半導体モジュールの製造方法について説明する。
(実施の形態2)
図8は、実施の形態2に係る半導体素子50および半導体モジュール30の構造を示す断面図である。半導体モジュール30は、素子搭載用基板10およびこれに搭載された半導体素子50を備える。実施の形態1と異なる点は、半導体素子50において、半導体基板51と突起電極16のそれぞれに対向する素子電極52に形成された金属層55が保護膜54の表面に対して凸になっているとともに、さらに、その金属層55の周辺において金属層55が保護膜54の表面を覆っている構造である点である。
次に、本発明の半導体モジュールを備えた携帯機器について説明する。なお、携帯機器として携帯電話に搭載する例を示すが、たとえば、個人用携帯情報端末(PDA)、デジタルビデオカメラ(DVC)、及びデジタルスチルカメラ(DSC)といった電子機器であってもよい。
Claims (8)
- 半導体基板と、
前記半導体基板に形成された素子電極と、
前記素子電極の周囲の前記半導体基板を被覆する保護層と、
を備え、
前記素子電極の表面が前記保護層の表面と同一面、あるいは前記素子電極の表面が前記保護層の表面に対して凸であることを特徴とする半導体素子。 - 前記保護層の表面に対して凸である前記素子電極は、さらに、その素子電極の周辺部において前記保護膜を覆っていることを特徴とする請求項1に記載の半導体素子。
- さらに、前記保護層の表面に対して凸である前記素子電極の表面は平坦部を有し、その平坦部は前記保護膜を覆った領域にまで延在していることを特徴とする請求項1または2に記載の半導体素子。
- 前記素子電極が上層及び下層の2層からなっており、前記下層が前記保護層を覆っていることを特徴とする請求項1乃至3のうちいずれか1項に記載の半導体素子。
- 請求項1乃至4のうちいずれか1項に記載の半導体素子と、
絶縁層と、
前記絶縁層の一方の主表面に設けられた配線層と、
前記配線層と電気的に接続されるとともに、前記配線層から前記絶縁層とは反対側に突出した突起電極と、を有する素子搭載用基板とを備え、
前記突起電極と前記半導体素子の素子電極とが電気的に接続されていることを特徴とする半導体モジュール。 - 前記突起電極の頂面部と前記素子電極は、それぞれ同じ種類の金属によって覆われており、それらの金属により接合されていることを特徴とする請求項5に記載の半導体モジュール。
- 請求項5または6に記載の半導体モジュールを搭載することを特徴とする携帯機器。
- 半導体基板に形成された素子電極の表面が前記素子電極の周囲に設けられた保護層の表面と同一面、または前記素子電極の表面が前記保護層の表面に対して凸になっている半導体素子を用意する工程と、
複数の突起電極が突設された金属板を準備する工程と、
前記突起電極が絶縁樹脂層側に向くようにして前記金属板を絶縁樹脂層の一方の主表面に配置するとともに前記突起電極を前記絶縁樹脂層に貫通させて前記絶縁樹脂層の他方の主表面から露出させる工程と、
前記素子電極が設けられた前記半導体素子を前記絶縁樹脂層の他方の主表面に配置し、前記突起電極とこれに対応する素子電極とを電気的に接続させる工程と、
前記金属板を選択的に除去して配線層を形成する工程と、
を備えることを特徴とする半導体モジュールの製造方法。
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JP2009027741A JP4588091B2 (ja) | 2008-02-29 | 2009-02-09 | 半導体モジュールの製造方法 |
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Cited By (2)
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WO2011152424A1 (ja) * | 2010-05-31 | 2011-12-08 | 三洋電機株式会社 | 半導体モジュールおよび半導体モジュールの製造方法 |
JP2019121780A (ja) * | 2017-12-28 | 2019-07-22 | 新光電気工業株式会社 | インダクタ、及びインダクタの製造方法 |
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JP5173758B2 (ja) * | 2008-11-17 | 2013-04-03 | 新光電気工業株式会社 | 半導体パッケージの製造方法 |
US9123732B2 (en) * | 2012-09-28 | 2015-09-01 | Intel Corporation | Die warpage control for thin die assembly |
GB2557614A (en) * | 2016-12-12 | 2018-06-27 | Infineon Technologies Austria Ag | Semiconductor device, electronic component and method |
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JP2000114302A (ja) * | 1998-10-08 | 2000-04-21 | Fuji Electric Co Ltd | 半導体装置 |
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