JP2009224770A5 - - Google Patents
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- Publication number
- JP2009224770A5 JP2009224770A5 JP2009029344A JP2009029344A JP2009224770A5 JP 2009224770 A5 JP2009224770 A5 JP 2009224770A5 JP 2009029344 A JP2009029344 A JP 2009029344A JP 2009029344 A JP2009029344 A JP 2009029344A JP 2009224770 A5 JP2009224770 A5 JP 2009224770A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal silicon
- silicon layer
- layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 34
- 239000000758 substrate Substances 0.000 claims 15
- 238000006243 chemical reaction Methods 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 239000012535 impurity Substances 0.000 claims 7
- 238000000926 separation method Methods 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- 230000001678 irradiating effect Effects 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 1
- 230000010363 phase shift Effects 0.000 claims 1
- 239000007790 solid phase Substances 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009029344A JP5438986B2 (ja) | 2008-02-19 | 2009-02-12 | 光電変換装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008037733 | 2008-02-19 | ||
| JP2008037733 | 2008-02-19 | ||
| JP2009029344A JP5438986B2 (ja) | 2008-02-19 | 2009-02-12 | 光電変換装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009224770A JP2009224770A (ja) | 2009-10-01 |
| JP2009224770A5 true JP2009224770A5 (enExample) | 2012-03-15 |
| JP5438986B2 JP5438986B2 (ja) | 2014-03-12 |
Family
ID=40955495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009029344A Expired - Fee Related JP5438986B2 (ja) | 2008-02-19 | 2009-02-12 | 光電変換装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US8017429B2 (enExample) |
| JP (1) | JP5438986B2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110041910A1 (en) * | 2009-08-18 | 2011-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US8704083B2 (en) * | 2010-02-11 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and fabrication method thereof |
| KR101068854B1 (ko) | 2010-02-19 | 2011-09-29 | 삼성코닝정밀소재 주식회사 | 패턴드 박막 기판 제조방법 |
| DE102010010813A1 (de) * | 2010-03-03 | 2011-09-08 | Centrotherm Photovoltaics Ag | Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung |
| US8569098B2 (en) | 2010-06-18 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
| US9076909B2 (en) | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| WO2011158722A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US8858818B2 (en) * | 2010-09-30 | 2014-10-14 | Suvolta, Inc. | Method for minimizing defects in a semiconductor substrate due to ion implantation |
| US20130276860A1 (en) * | 2011-02-01 | 2013-10-24 | Mitsubishi Electric Corporation | Solar battery cell, manufacturing method thereof, and solar battery module |
| US8628996B2 (en) * | 2011-06-15 | 2014-01-14 | International Business Machines Corporation | Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells |
| JPWO2013015173A1 (ja) * | 2011-07-25 | 2015-02-23 | 日立化成株式会社 | 太陽電池基板、太陽電池基板の製造方法、太陽電池素子及び太陽電池 |
| US20130045560A1 (en) * | 2011-08-16 | 2013-02-21 | Kenneth P. MacWilliams | Techniques and systems for fabricating anti-reflective and passivation layers on solar cells |
| US8778786B1 (en) | 2012-05-29 | 2014-07-15 | Suvolta, Inc. | Method for substrate preservation during transistor fabrication |
| JP5858889B2 (ja) * | 2012-09-24 | 2016-02-10 | 三菱電機株式会社 | 太陽電池用基板、その製造方法、太陽電池及びその製造方法 |
| KR102251598B1 (ko) * | 2014-02-18 | 2021-05-13 | 엔지케이 인슐레이터 엘티디 | 반도체용 복합 기판의 핸들 기판 및 반도체용 복합 기판 |
| JP6534263B2 (ja) * | 2015-02-05 | 2019-06-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP6459948B2 (ja) * | 2015-12-15 | 2019-01-30 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
| JP2019102576A (ja) * | 2017-11-30 | 2019-06-24 | セイコーエプソン株式会社 | 電子機器および光電変換素子の製造方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2702304B2 (ja) * | 1991-03-27 | 1998-01-21 | 三洋電機株式会社 | 多結晶半導体層の形成方法及びこれを用いた光起電力装置の製造方法 |
| US6697129B1 (en) * | 1996-02-14 | 2004-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Guest-host mode liquid crystal display device of lateral electric field driving type |
| JP3204986B2 (ja) * | 1996-05-28 | 2001-09-04 | ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス |
| JPH1093122A (ja) * | 1996-09-10 | 1998-04-10 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜太陽電池の製造方法 |
| JPH10335683A (ja) | 1997-05-28 | 1998-12-18 | Ion Kogaku Kenkyusho:Kk | タンデム型太陽電池およびその製造方法 |
| JP2001053020A (ja) * | 1999-08-06 | 2001-02-23 | Sony Corp | 半導体薄膜の結晶化方法及び薄膜半導体装置の製造方法 |
| US6548370B1 (en) * | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
| US6489222B2 (en) * | 2000-06-02 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7078321B2 (en) * | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7217605B2 (en) * | 2000-11-29 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method of manufacturing a semiconductor device |
| JP2003258285A (ja) | 2002-02-27 | 2003-09-12 | Sharp Corp | 表面凹凸構造の作製方法及び太陽電池 |
| JP2004119919A (ja) * | 2002-09-30 | 2004-04-15 | Hitachi Ltd | 半導体薄膜および半導体薄膜の製造方法 |
| JP4389514B2 (ja) * | 2003-08-08 | 2009-12-24 | 日立電線株式会社 | 薄膜半導体の形成方法 |
| JP2005129769A (ja) * | 2003-10-24 | 2005-05-19 | Hitachi Ltd | 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置 |
| EP1770443B1 (en) * | 2005-09-28 | 2016-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and exposure method |
| TWI400758B (zh) * | 2005-12-28 | 2013-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| TWI479660B (zh) * | 2006-08-31 | 2015-04-01 | Semiconductor Energy Lab | 薄膜電晶體，其製造方法，及半導體裝置 |
| JP2008112847A (ja) * | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 |
| EP2264755A3 (en) * | 2007-01-24 | 2011-11-23 | S.O.I.TEC Silicon on Insulator Technologies S.A. | Method for manufacturing silicon on insulator wafers and corresponding wafer |
| EP2135295A4 (en) * | 2007-04-06 | 2014-05-21 | Semiconductor Energy Lab | Photovoltaic module and method for its production |
| EP2143146A1 (en) * | 2007-04-13 | 2010-01-13 | Semiconductor Energy Laboratory Co, Ltd. | Photovoltaic device and method for manufacturing the same |
| CN101842910B (zh) * | 2007-11-01 | 2013-03-27 | 株式会社半导体能源研究所 | 用于制造光电转换器件的方法 |
| WO2009060808A1 (en) * | 2007-11-09 | 2009-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| JP5315008B2 (ja) * | 2007-11-16 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
| US20090139558A1 (en) * | 2007-11-29 | 2009-06-04 | Shunpei Yamazaki | Photoelectric conversion device and manufacturing method thereof |
| JP5248994B2 (ja) * | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| JP5286046B2 (ja) * | 2007-11-30 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| JP5248995B2 (ja) * | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| EP2075850A3 (en) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelectric conversion device and manufacturing method thereof |
| JP5572307B2 (ja) * | 2007-12-28 | 2014-08-13 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
-
2009
- 2009-02-12 US US12/369,760 patent/US8017429B2/en not_active Expired - Fee Related
- 2009-02-12 JP JP2009029344A patent/JP5438986B2/ja not_active Expired - Fee Related
-
2011
- 2011-08-31 US US13/222,423 patent/US8313975B2/en not_active Expired - Fee Related