RU2015116526A - Способ изготовления солнечного элемента - Google Patents

Способ изготовления солнечного элемента Download PDF

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RU2015116526A
RU2015116526A RU2015116526A RU2015116526A RU2015116526A RU 2015116526 A RU2015116526 A RU 2015116526A RU 2015116526 A RU2015116526 A RU 2015116526A RU 2015116526 A RU2015116526 A RU 2015116526A RU 2015116526 A RU2015116526 A RU 2015116526A
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heat treatment
local heat
electrode
laser beam
general
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Такаси МУРАКАМИ
Такенори ВАТАБЕ
Хироюки ОЦУКА
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Син-Эцу Кемикал Ко., Лтд.
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    • H—ELECTRICITY
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
    • H01L31/03125—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

1. Способ изготовления солнечного элемента, содержащий:этап нанесения содержащего проводящий материал пастообразного электродного вещества на просветляющую пленку, сформированную на стороне светопринимающей поверхности полупроводниковой подложки, имеющей по меньшей мере pn-переход, иэтап обжига электрода, включающий в себя локальную термообработку облучением лазерным лучом только участка с нанесенным электродным веществом для нагрева упомянутого участка так, что обжигают по меньшей мере часть проводящего материала, и общую термообработку нагреванием всей полупроводниковой подложки при температуре ниже 800°C.2. Способ по п. 1, в котором этап обжига электрода включает в себя термообработку в последовательности из локальной термообработки и общей термообработки или в последовательности из общей термообработки и локальной термообработки.3. Способ по п. 1 или 2, в котором общая термообработка включает в себя максимальную температуру нагрева от 600 до 780°C.4. Способ по п. 1 или 2, в котором лазерный луч при локальной термообработке имеет длину волны от 300 до 500 нм.5. Способ по п. 1 или 2, в котором непрерывно выполняют локальную термообработку и обработку из изоляции pn-перехода с помощью лазерного луча.

Claims (5)

1. Способ изготовления солнечного элемента, содержащий:
этап нанесения содержащего проводящий материал пастообразного электродного вещества на просветляющую пленку, сформированную на стороне светопринимающей поверхности полупроводниковой подложки, имеющей по меньшей мере pn-переход, и
этап обжига электрода, включающий в себя локальную термообработку облучением лазерным лучом только участка с нанесенным электродным веществом для нагрева упомянутого участка так, что обжигают по меньшей мере часть проводящего материала, и общую термообработку нагреванием всей полупроводниковой подложки при температуре ниже 800°C.
2. Способ по п. 1, в котором этап обжига электрода включает в себя термообработку в последовательности из локальной термообработки и общей термообработки или в последовательности из общей термообработки и локальной термообработки.
3. Способ по п. 1 или 2, в котором общая термообработка включает в себя максимальную температуру нагрева от 600 до 780°C.
4. Способ по п. 1 или 2, в котором лазерный луч при локальной термообработке имеет длину волны от 300 до 500 нм.
5. Способ по п. 1 или 2, в котором непрерывно выполняют локальную термообработку и обработку из изоляции pn-перехода с помощью лазерного луча.
RU2015116526A 2012-10-04 2013-08-23 Способ изготовления солнечного элемента RU2636405C2 (ru)

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JP2012221850 2012-10-04
JP2012-221850 2012-10-04
PCT/JP2013/072490 WO2014054350A1 (ja) 2012-10-04 2013-08-23 太陽電池セルの製造方法

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KR (1) KR101873563B1 (ru)
CN (1) CN104704639B (ru)
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TW201421724A (zh) 2014-06-01
US20150228841A1 (en) 2015-08-13
KR20150068415A (ko) 2015-06-19
EP2905812A1 (en) 2015-08-12
JPWO2014054350A1 (ja) 2016-08-25
RU2636405C2 (ru) 2017-11-23
EP2905812B1 (en) 2021-07-21
EP2905812A4 (en) 2016-05-04
US9614117B2 (en) 2017-04-04
WO2014054350A1 (ja) 2014-04-10
CN104704639B (zh) 2017-02-22
KR101873563B1 (ko) 2018-07-03
TWI585991B (zh) 2017-06-01
MY170332A (en) 2019-07-17
JP6107830B2 (ja) 2017-04-05
CN104704639A (zh) 2015-06-10

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