RU2009143680A - Фотоэлектрический модуль, содержащий слой с электропроводными пятнами - Google Patents

Фотоэлектрический модуль, содержащий слой с электропроводными пятнами Download PDF

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RU2009143680A
RU2009143680A RU2009143680/28A RU2009143680A RU2009143680A RU 2009143680 A RU2009143680 A RU 2009143680A RU 2009143680/28 A RU2009143680/28 A RU 2009143680/28A RU 2009143680 A RU2009143680 A RU 2009143680A RU 2009143680 A RU2009143680 A RU 2009143680A
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spots
layer
conductive
silicon
pin
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RU2009143680/28A
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Геррит Корнелис ДЮББЕЛЬДАМ (NL)
Геррит Корнелис Дюббельдам
Эдвин Петер СПОРТЕЛ (NL)
Эдвин Петер СПОРТЕЛ
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Хелиантос Б.В. (Nl)
Хелиантос Б.В.
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Publication of RU2009143680A publication Critical patent/RU2009143680A/ru

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

1. Фотоэлектрический (ФЭ) модуль, содержащий множество элементов, причем каждый элемент включает в себя подложку, прозрачный проводящий слой, фотоэлектрический слой и слой заднего электрода, в котором фотоэлектрический слой содержит по меньшей мере один p-i-n или n-i-p кремниевый слой, отличающийся тем, что упомянутый кремниевый слой содержит 10-1000 электропроводных пятен из рекристаллизованного кремния на см2, каждое из которых независимо имеет поверхность, составляющую 10-2500 мкм2. ! 2. ФЭ модуль по п.1, в котором кремниевый слой содержит 20-500 электропроводных пятен на см2, предпочтительно 30-300 электропроводных пятен на см2, более предпочтительно 80-120 электропроводных пятен на см2. ! 3. ФЭ модуль по п.1 или 2, в котором электропроводные пятна имеют поверхность, составляющую 30-300 мкм2 , предпочтительно 50-150 мкм2, более предпочтительно 60-120 мкм2 . ! 4. Способ изготовления ФЭ модуля по любому из пп.1-3, в котором p-i-n или n-i-p кремниевый слой локально нагревают в 10-1000 пятнах на см2, причем каждое пятно независимо имеет поверхность, составляющую 10-2500 мкм2, посредством чего p-i-n или n-i-p кремний в этих пятнах преобразуется, формируя электропроводные пятна. ! 5. Способ по п.4, в котором нагревание выполняют посредством импульсного лазера. ! 6. Способ по п.5, в котором нагревание выполняют посредством лазера Nd-YAG, Nd-YLF или Nd-VO4 с удвоением частоты с длиной волны λ, находящейся в диапазоне между 520 нм и 550 нм, и длительностью импульса менее 50 нс.

Claims (6)

1. Фотоэлектрический (ФЭ) модуль, содержащий множество элементов, причем каждый элемент включает в себя подложку, прозрачный проводящий слой, фотоэлектрический слой и слой заднего электрода, в котором фотоэлектрический слой содержит по меньшей мере один p-i-n или n-i-p кремниевый слой, отличающийся тем, что упомянутый кремниевый слой содержит 10-1000 электропроводных пятен из рекристаллизованного кремния на см2, каждое из которых независимо имеет поверхность, составляющую 10-2500 мкм2.
2. ФЭ модуль по п.1, в котором кремниевый слой содержит 20-500 электропроводных пятен на см2, предпочтительно 30-300 электропроводных пятен на см2, более предпочтительно 80-120 электропроводных пятен на см2.
3. ФЭ модуль по п.1 или 2, в котором электропроводные пятна имеют поверхность, составляющую 30-300 мкм2 , предпочтительно 50-150 мкм2, более предпочтительно 60-120 мкм2 .
4. Способ изготовления ФЭ модуля по любому из пп.1-3, в котором p-i-n или n-i-p кремниевый слой локально нагревают в 10-1000 пятнах на см2, причем каждое пятно независимо имеет поверхность, составляющую 10-2500 мкм2, посредством чего p-i-n или n-i-p кремний в этих пятнах преобразуется, формируя электропроводные пятна.
5. Способ по п.4, в котором нагревание выполняют посредством импульсного лазера.
6. Способ по п.5, в котором нагревание выполняют посредством лазера Nd-YAG, Nd-YLF или Nd-VO4 с удвоением частоты с длиной волны λ, находящейся в диапазоне между 520 нм и 550 нм, и длительностью импульса менее 50 нс.
RU2009143680/28A 2007-04-26 2008-04-23 Фотоэлектрический модуль, содержащий слой с электропроводными пятнами RU2009143680A (ru)

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EP07107029.6 2007-04-26
EP07107029 2007-04-26

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US (1) US20100089432A1 (ru)
EP (1) EP2137771B1 (ru)
JP (1) JP4509219B1 (ru)
KR (1) KR101526616B1 (ru)
CN (1) CN101675533B (ru)
ES (1) ES2620092T3 (ru)
MX (1) MX2009011501A (ru)
RU (1) RU2009143680A (ru)
TW (1) TW200908356A (ru)
WO (1) WO2008132104A2 (ru)
ZA (1) ZA200907184B (ru)

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US20100279458A1 (en) * 2009-04-29 2010-11-04 Du Pont Apollo Ltd. Process for making partially transparent photovoltaic modules
US9912290B2 (en) * 2012-06-18 2018-03-06 Sunpower Corporation High current burn-in of solar cells
NL2012557B1 (en) * 2014-04-02 2016-02-15 Stichting Energieonderzoek Centrum Nederland Photovoltaic module.

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US5268037A (en) * 1992-05-21 1993-12-07 United Solar Systems Corporation Monolithic, parallel connected photovoltaic array and method for its manufacture
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JP4410401B2 (ja) * 2000-08-30 2010-02-03 株式会社カネカ 薄膜太陽電池モジュール
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WO2008132104A3 (en) 2009-06-18
MX2009011501A (es) 2009-11-10
CN101675533A (zh) 2010-03-17
EP2137771B1 (en) 2017-01-04
KR20100015717A (ko) 2010-02-12
US20100089432A1 (en) 2010-04-15
EP2137771A2 (en) 2009-12-30
WO2008132104A2 (en) 2008-11-06
ZA200907184B (en) 2010-07-28
TW200908356A (en) 2009-02-16
KR101526616B1 (ko) 2015-06-05
CN101675533B (zh) 2011-08-24
ES2620092T3 (es) 2017-06-27
JP2010525593A (ja) 2010-07-22
JP4509219B1 (ja) 2010-07-21

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