MX2009011501A - Modulo fotovoltaico que comprende una capa con puntos conductores. - Google Patents

Modulo fotovoltaico que comprende una capa con puntos conductores.

Info

Publication number
MX2009011501A
MX2009011501A MX2009011501A MX2009011501A MX2009011501A MX 2009011501 A MX2009011501 A MX 2009011501A MX 2009011501 A MX2009011501 A MX 2009011501A MX 2009011501 A MX2009011501 A MX 2009011501A MX 2009011501 A MX2009011501 A MX 2009011501A
Authority
MX
Mexico
Prior art keywords
layer
silicon
spots
photovoltaic module
photovoltaic
Prior art date
Application number
MX2009011501A
Other languages
English (en)
Inventor
Gerrit Cornelis Dubbeldam
Edwin Peter Sportel
Original Assignee
Helianthos Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helianthos Bv filed Critical Helianthos Bv
Publication of MX2009011501A publication Critical patent/MX2009011501A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

La invención se refiere a un módulo fotovoltaico (PV) que comprende una pluralidad de celdas, cada celda contiene un substrato, una capa conductora transparente, una capa fotovoltaica, y una capa de electrodo posterior, en donde la capa fotovoltaica comprende al menos una capa de silicio p-i-n o n-i-p determinada porque la capa de silicio comprende 10 a 1000 puntos conductores de silicio recristalizado por cm2, cada uno teniendo independientemente una superficie de 10 a 2500 µm2 el módulo PV puede obtenerse mediante un método en donde la capa de silicio p-i-n o n-i-p se calienta localmente por lo que dicho silicio se transforma en estos puntos, después de lo cual el silicio es estos punto se deja solidificar en un estado trasformado.
MX2009011501A 2007-04-26 2008-04-23 Modulo fotovoltaico que comprende una capa con puntos conductores. MX2009011501A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07107029 2007-04-26
PCT/EP2008/054896 WO2008132104A2 (en) 2007-04-26 2008-04-23 Photovoltaic module comprising layer with conducting spots

Publications (1)

Publication Number Publication Date
MX2009011501A true MX2009011501A (es) 2009-11-10

Family

ID=38787713

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009011501A MX2009011501A (es) 2007-04-26 2008-04-23 Modulo fotovoltaico que comprende una capa con puntos conductores.

Country Status (11)

Country Link
US (1) US20100089432A1 (es)
EP (1) EP2137771B1 (es)
JP (1) JP4509219B1 (es)
KR (1) KR101526616B1 (es)
CN (1) CN101675533B (es)
ES (1) ES2620092T3 (es)
MX (1) MX2009011501A (es)
RU (1) RU2009143680A (es)
TW (1) TW200908356A (es)
WO (1) WO2008132104A2 (es)
ZA (1) ZA200907184B (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094272A (ja) * 2007-10-09 2009-04-30 Mitsubishi Heavy Ind Ltd 光電変換モジュールおよび光電変換モジュールの製造方法
US20100279458A1 (en) * 2009-04-29 2010-11-04 Du Pont Apollo Ltd. Process for making partially transparent photovoltaic modules
US9912290B2 (en) * 2012-06-18 2018-03-06 Sunpower Corporation High current burn-in of solar cells
NL2012557B1 (en) * 2014-04-02 2016-02-15 Stichting Energieonderzoek Centrum Nederland Photovoltaic module.

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268037A (en) * 1992-05-21 1993-12-07 United Solar Systems Corporation Monolithic, parallel connected photovoltaic array and method for its manufacture
DE4315959C2 (de) * 1993-05-12 1997-09-11 Max Planck Gesellschaft Verfahren zur Herstellung einer strukturierten Schicht eines Halbleitermaterials sowie einer Dotierungsstruktur in einem Halbleitermaterial unter Einwirkung von Laserstrahlung
US5468988A (en) * 1994-03-04 1995-11-21 United Solar Systems Corporation Large area, through-hole, parallel-connected photovoltaic device
JPH11112010A (ja) * 1997-10-08 1999-04-23 Sharp Corp 太陽電池およびその製造方法
US6011215A (en) * 1997-12-18 2000-01-04 United Solar Systems Corporation Point contact photovoltaic module and method for its manufacture
US6468828B1 (en) * 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
DE19921545A1 (de) * 1999-05-11 2000-11-23 Angew Solarenergie Ase Gmbh Solarzelle sowie Verfahren zur Herstellung einer solchen
JP2000323738A (ja) * 1999-05-14 2000-11-24 Kanegafuchi Chem Ind Co Ltd 太陽電池モジュールの逆バイアス処理装置
US6391528B1 (en) * 2000-04-03 2002-05-21 3M Innovative Properties Company Methods of making wire grid optical elements by preferential deposition of material on a substrate
ATE337568T1 (de) * 2000-04-03 2006-09-15 3M Innovative Properties Co Selektive abscheidung eines materials auf ein substrat gemaess eines interferenzmusters
JP4410401B2 (ja) * 2000-08-30 2010-02-03 株式会社カネカ 薄膜太陽電池モジュール
JP4563085B2 (ja) * 2004-06-15 2010-10-13 三菱重工業株式会社 薄膜太陽電池
US7301215B2 (en) * 2005-08-22 2007-11-27 Canon Kabushiki Kaisha Photovoltaic device

Also Published As

Publication number Publication date
WO2008132104A3 (en) 2009-06-18
CN101675533A (zh) 2010-03-17
EP2137771B1 (en) 2017-01-04
KR20100015717A (ko) 2010-02-12
US20100089432A1 (en) 2010-04-15
EP2137771A2 (en) 2009-12-30
WO2008132104A2 (en) 2008-11-06
ZA200907184B (en) 2010-07-28
TW200908356A (en) 2009-02-16
KR101526616B1 (ko) 2015-06-05
CN101675533B (zh) 2011-08-24
ES2620092T3 (es) 2017-06-27
JP2010525593A (ja) 2010-07-22
JP4509219B1 (ja) 2010-07-21
RU2009143680A (ru) 2011-06-10

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