JP5438986B2 - 光電変換装置の製造方法 - Google Patents

光電変換装置の製造方法 Download PDF

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Publication number
JP5438986B2
JP5438986B2 JP2009029344A JP2009029344A JP5438986B2 JP 5438986 B2 JP5438986 B2 JP 5438986B2 JP 2009029344 A JP2009029344 A JP 2009029344A JP 2009029344 A JP2009029344 A JP 2009029344A JP 5438986 B2 JP5438986 B2 JP 5438986B2
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Prior art keywords
single crystal
silicon layer
crystal silicon
layer
impurity
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Expired - Fee Related
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JP2009029344A
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English (en)
Japanese (ja)
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JP2009224770A5 (enExample
JP2009224770A (ja
Inventor
史人 井坂
翔 加藤
純平 桃
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009029344A 2008-02-19 2009-02-12 光電変換装置の製造方法 Expired - Fee Related JP5438986B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009029344A JP5438986B2 (ja) 2008-02-19 2009-02-12 光電変換装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008037733 2008-02-19
JP2008037733 2008-02-19
JP2009029344A JP5438986B2 (ja) 2008-02-19 2009-02-12 光電変換装置の製造方法

Publications (3)

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JP2009224770A JP2009224770A (ja) 2009-10-01
JP2009224770A5 JP2009224770A5 (enExample) 2012-03-15
JP5438986B2 true JP5438986B2 (ja) 2014-03-12

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US (2) US8017429B2 (enExample)
JP (1) JP5438986B2 (enExample)

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US20110041910A1 (en) * 2009-08-18 2011-02-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
KR101068854B1 (ko) 2010-02-19 2011-09-29 삼성코닝정밀소재 주식회사 패턴드 박막 기판 제조방법
DE102010010813A1 (de) * 2010-03-03 2011-09-08 Centrotherm Photovoltaics Ag Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung
WO2011158722A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US8569098B2 (en) 2010-06-18 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
US9076909B2 (en) 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US8858818B2 (en) * 2010-09-30 2014-10-14 Suvolta, Inc. Method for minimizing defects in a semiconductor substrate due to ion implantation
CN103314455B (zh) * 2011-02-01 2016-04-27 三菱电机株式会社 太阳能电池单元及其制造方法、以及太阳能电池模块
US8628996B2 (en) * 2011-06-15 2014-01-14 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
CN103688367A (zh) * 2011-07-25 2014-03-26 日立化成株式会社 太阳能电池基板、太阳能电池基板的制造方法、太阳能电池元件及太阳能电池
US20130045560A1 (en) * 2011-08-16 2013-02-21 Kenneth P. MacWilliams Techniques and systems for fabricating anti-reflective and passivation layers on solar cells
US8778786B1 (en) 2012-05-29 2014-07-15 Suvolta, Inc. Method for substrate preservation during transistor fabrication
JP5858889B2 (ja) * 2012-09-24 2016-02-10 三菱電機株式会社 太陽電池用基板、その製造方法、太陽電池及びその製造方法
WO2015125770A1 (ja) * 2014-02-18 2015-08-27 日本碍子株式会社 半導体用複合基板のハンドル基板および半導体用複合基板
JP6534263B2 (ja) * 2015-02-05 2019-06-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6459948B2 (ja) * 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
JP2019102576A (ja) * 2017-11-30 2019-06-24 セイコーエプソン株式会社 電子機器および光電変換素子の製造方法

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JP5248995B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5286046B2 (ja) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
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Also Published As

Publication number Publication date
US20110318864A1 (en) 2011-12-29
US8017429B2 (en) 2011-09-13
JP2009224770A (ja) 2009-10-01
US20090209059A1 (en) 2009-08-20
US8313975B2 (en) 2012-11-20

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