JP2009212340A5 - - Google Patents
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- Publication number
- JP2009212340A5 JP2009212340A5 JP2008054621A JP2008054621A JP2009212340A5 JP 2009212340 A5 JP2009212340 A5 JP 2009212340A5 JP 2008054621 A JP2008054621 A JP 2008054621A JP 2008054621 A JP2008054621 A JP 2008054621A JP 2009212340 A5 JP2009212340 A5 JP 2009212340A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heat transfer
- electrode
- processing chamber
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims 10
- 238000001816 cooling Methods 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 238000009413 insulation Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008054621A JP5224855B2 (ja) | 2008-03-05 | 2008-03-05 | 電極ユニット、基板処理装置及び電極ユニットの温度制御方法 |
| CN2009100089283A CN101527262B (zh) | 2008-03-05 | 2009-02-12 | 电极单元、基板处理装置及电极单元的温度控制方法 |
| US12/397,708 US20090223932A1 (en) | 2008-03-05 | 2009-03-04 | Electrode unit, substrate processing apparatus, and temperature control method for electrode unit |
| TW098106984A TWI521589B (zh) | 2008-03-05 | 2009-03-04 | An electrode unit, a substrate processing device, and an electrode unit |
| KR1020090018609A KR101060774B1 (ko) | 2008-03-05 | 2009-03-04 | 전극 유닛, 기판 처리 장치 및 전극 유닛의 온도 제어 방법 |
| US13/544,875 US20120273135A1 (en) | 2008-03-05 | 2012-07-09 | Electrode unit, substrate processing apparatus, and temperature control method for electrode unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008054621A JP5224855B2 (ja) | 2008-03-05 | 2008-03-05 | 電極ユニット、基板処理装置及び電極ユニットの温度制御方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013047765A Division JP2013110440A (ja) | 2013-03-11 | 2013-03-11 | 電極ユニット及び基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009212340A JP2009212340A (ja) | 2009-09-17 |
| JP2009212340A5 true JP2009212340A5 (enExample) | 2011-04-21 |
| JP5224855B2 JP5224855B2 (ja) | 2013-07-03 |
Family
ID=41052524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008054621A Expired - Fee Related JP5224855B2 (ja) | 2008-03-05 | 2008-03-05 | 電極ユニット、基板処理装置及び電極ユニットの温度制御方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20090223932A1 (enExample) |
| JP (1) | JP5224855B2 (enExample) |
| KR (1) | KR101060774B1 (enExample) |
| CN (1) | CN101527262B (enExample) |
| TW (1) | TWI521589B (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8221582B2 (en) * | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8206506B2 (en) * | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
| US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
| US8272346B2 (en) * | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
| US8419959B2 (en) | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| JP5302834B2 (ja) * | 2009-09-24 | 2013-10-02 | 株式会社アルバック | プラズマ処理装置 |
| KR200464037Y1 (ko) | 2009-10-13 | 2012-12-07 | 램 리써치 코포레이션 | 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극 |
| US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
| KR101295794B1 (ko) * | 2011-05-31 | 2013-08-09 | 세메스 주식회사 | 기판 처리 장치 |
| JP5905735B2 (ja) * | 2012-02-21 | 2016-04-20 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法 |
| JP2015536043A (ja) | 2012-09-26 | 2015-12-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板処理システムにおける温度制御 |
| US8975817B2 (en) * | 2012-10-17 | 2015-03-10 | Lam Research Corporation | Pressure controlled heat pipe temperature control plate |
| US9416450B2 (en) * | 2012-10-24 | 2016-08-16 | Applied Materials, Inc. | Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber |
| US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
| US9945033B2 (en) * | 2014-01-06 | 2018-04-17 | Applied Materials, Inc. | High efficiency inductively coupled plasma source with customized RF shield for plasma profile control |
| CN104952682A (zh) * | 2014-03-25 | 2015-09-30 | 中微半导体设备(上海)有限公司 | 一种等离子体处理腔室及其基台 |
| CN106876303B (zh) * | 2014-09-01 | 2019-09-13 | 上海华力微电子有限公司 | 一种刻蚀方法 |
| US10233543B2 (en) | 2015-10-09 | 2019-03-19 | Applied Materials, Inc. | Showerhead assembly with multiple fluid delivery zones |
| KR20170073757A (ko) * | 2015-12-18 | 2017-06-29 | 삼성전자주식회사 | 플라즈마 처리 장치용 상부 전극 및 이를 포함하는 플라즈마 처리 장치 |
| KR20170123830A (ko) * | 2016-04-29 | 2017-11-09 | 세메스 주식회사 | 기판 온도 제어 장치, 그를 포함하는 기판 처리 장치 및 그 제어 방법 |
| CN107782767B (zh) * | 2016-08-26 | 2022-01-07 | 深迪半导体(绍兴)有限公司 | 一种气体传感器加热盘及加工方法 |
| CN108231572A (zh) * | 2016-12-21 | 2018-06-29 | 有研半导体材料有限公司 | 一种用于硅电极腐蚀的方法 |
| US20180197761A1 (en) * | 2017-01-10 | 2018-07-12 | Axcelis Technologies, Inc. | Active workpiece heating or cooling for an ion implantation system |
| JP7008497B2 (ja) * | 2017-12-22 | 2022-01-25 | 東京エレクトロン株式会社 | 基板処理装置および温度制御方法 |
| KR101940287B1 (ko) * | 2018-02-08 | 2019-01-18 | (주)테키스트 | 반도체 제조용 온도 조절 장치 |
| JP2021521648A (ja) * | 2018-04-17 | 2021-08-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 加熱されるセラミック面板 |
| KR102563925B1 (ko) * | 2018-08-31 | 2023-08-04 | 삼성전자 주식회사 | 반도체 제조 장치 |
| JP7134863B2 (ja) * | 2018-12-27 | 2022-09-12 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US12016092B2 (en) | 2019-12-05 | 2024-06-18 | Applied Materials, Inc. | Gas distribution ceramic heater for deposition chamber |
| CN113097097A (zh) * | 2019-12-23 | 2021-07-09 | 中微半导体设备(上海)股份有限公司 | 等离子体刻蚀装置及其工作方法 |
| KR102593142B1 (ko) * | 2020-05-19 | 2023-10-25 | 세메스 주식회사 | 기판 처리 장치 및 그의 페라이트 코어 온도 제어 방법 |
| CN113921360B (zh) * | 2020-07-10 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置中的加热装置及抗射频干扰方法 |
| US12191169B2 (en) * | 2020-07-19 | 2025-01-07 | Applied Materials, Inc. | Systems and methods for faceplate temperature control |
| US12451331B2 (en) * | 2020-09-22 | 2025-10-21 | Applied Materials, Inc. | Showerhead assembly with recursive gas channels |
| KR20220095677A (ko) * | 2020-12-30 | 2022-07-07 | 세메스 주식회사 | 온도 측정 유닛을 포함하는 공정 챔버 및 온도 측정 유닛을 포함하는 기판 처리 장치 |
| JP7560215B2 (ja) * | 2021-03-17 | 2024-10-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2023283375A1 (en) * | 2021-07-08 | 2023-01-12 | Applied Materials, Inc. | Showerhead assembly with recursive gas channels |
| KR20240090232A (ko) * | 2021-10-05 | 2024-06-21 | 도쿄엘렉트론가부시키가이샤 | 상부 전극 구조 및 플라즈마 처리 장치 |
| CN115050627B (zh) * | 2022-06-29 | 2025-09-16 | 北京北方华创微电子装备有限公司 | 用于半导体工艺腔室的上电极组件及该半导体工艺腔室 |
| CN116241928A (zh) * | 2023-02-07 | 2023-06-09 | 北新集团建材股份有限公司 | 发热采暖板、具有其的装置及房屋 |
| CN118553593B (zh) * | 2024-07-24 | 2024-10-29 | 深圳市新凯来工业机器有限公司 | 一种上电极、等离子体刻蚀设备及温度控制方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4612077A (en) * | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
| JPH09209155A (ja) * | 1996-01-30 | 1997-08-12 | Kokusai Electric Co Ltd | プラズマ処理装置 |
| JP2001068538A (ja) * | 1999-06-21 | 2001-03-16 | Tokyo Electron Ltd | 電極構造、載置台構造、プラズマ処理装置及び処理装置 |
| JP4323021B2 (ja) * | 1999-09-13 | 2009-09-02 | 株式会社エフオーアイ | プラズマ処理装置 |
| US6786175B2 (en) * | 2001-08-08 | 2004-09-07 | Lam Research Corporation | Showerhead electrode design for semiconductor processing reactor |
| JP4186644B2 (ja) * | 2003-02-17 | 2008-11-26 | 株式会社Ihi | 真空処理装置の冷却装置 |
| JP4493932B2 (ja) * | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | 上部電極及びプラズマ処理装置 |
| US7846254B2 (en) * | 2003-05-16 | 2010-12-07 | Applied Materials, Inc. | Heat transfer assembly |
| US7712434B2 (en) * | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
| US8317968B2 (en) * | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
| US20060213763A1 (en) * | 2005-03-25 | 2006-09-28 | Tokyo Electron Limited | Temperature control method and apparatus, and plasma processing apparatus |
| US8375890B2 (en) * | 2007-03-19 | 2013-02-19 | Micron Technology, Inc. | Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers |
-
2008
- 2008-03-05 JP JP2008054621A patent/JP5224855B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-12 CN CN2009100089283A patent/CN101527262B/zh not_active Expired - Fee Related
- 2009-03-04 US US12/397,708 patent/US20090223932A1/en not_active Abandoned
- 2009-03-04 KR KR1020090018609A patent/KR101060774B1/ko active Active
- 2009-03-04 TW TW098106984A patent/TWI521589B/zh active
-
2012
- 2012-07-09 US US13/544,875 patent/US20120273135A1/en not_active Abandoned