JP2009212340A5 - - Google Patents

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Publication number
JP2009212340A5
JP2009212340A5 JP2008054621A JP2008054621A JP2009212340A5 JP 2009212340 A5 JP2009212340 A5 JP 2009212340A5 JP 2008054621 A JP2008054621 A JP 2008054621A JP 2008054621 A JP2008054621 A JP 2008054621A JP 2009212340 A5 JP2009212340 A5 JP 2009212340A5
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JP
Japan
Prior art keywords
layer
heat transfer
electrode
processing chamber
plasma
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Application number
JP2008054621A
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English (en)
Japanese (ja)
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JP5224855B2 (ja
JP2009212340A (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2008054621A external-priority patent/JP5224855B2/ja
Priority to JP2008054621A priority Critical patent/JP5224855B2/ja
Priority to CN2009100089283A priority patent/CN101527262B/zh
Priority to KR1020090018609A priority patent/KR101060774B1/ko
Priority to TW098106984A priority patent/TWI521589B/zh
Priority to US12/397,708 priority patent/US20090223932A1/en
Publication of JP2009212340A publication Critical patent/JP2009212340A/ja
Publication of JP2009212340A5 publication Critical patent/JP2009212340A5/ja
Priority to US13/544,875 priority patent/US20120273135A1/en
Publication of JP5224855B2 publication Critical patent/JP5224855B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008054621A 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法 Expired - Fee Related JP5224855B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008054621A JP5224855B2 (ja) 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法
CN2009100089283A CN101527262B (zh) 2008-03-05 2009-02-12 电极单元、基板处理装置及电极单元的温度控制方法
US12/397,708 US20090223932A1 (en) 2008-03-05 2009-03-04 Electrode unit, substrate processing apparatus, and temperature control method for electrode unit
TW098106984A TWI521589B (zh) 2008-03-05 2009-03-04 An electrode unit, a substrate processing device, and an electrode unit
KR1020090018609A KR101060774B1 (ko) 2008-03-05 2009-03-04 전극 유닛, 기판 처리 장치 및 전극 유닛의 온도 제어 방법
US13/544,875 US20120273135A1 (en) 2008-03-05 2012-07-09 Electrode unit, substrate processing apparatus, and temperature control method for electrode unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008054621A JP5224855B2 (ja) 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013047765A Division JP2013110440A (ja) 2013-03-11 2013-03-11 電極ユニット及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2009212340A JP2009212340A (ja) 2009-09-17
JP2009212340A5 true JP2009212340A5 (enExample) 2011-04-21
JP5224855B2 JP5224855B2 (ja) 2013-07-03

Family

ID=41052524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008054621A Expired - Fee Related JP5224855B2 (ja) 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法

Country Status (5)

Country Link
US (2) US20090223932A1 (enExample)
JP (1) JP5224855B2 (enExample)
KR (1) KR101060774B1 (enExample)
CN (1) CN101527262B (enExample)
TW (1) TWI521589B (enExample)

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JP2015536043A (ja) 2012-09-26 2015-12-17 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 基板処理システムにおける温度制御
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CN106876303B (zh) * 2014-09-01 2019-09-13 上海华力微电子有限公司 一种刻蚀方法
US10233543B2 (en) 2015-10-09 2019-03-19 Applied Materials, Inc. Showerhead assembly with multiple fluid delivery zones
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KR20170123830A (ko) * 2016-04-29 2017-11-09 세메스 주식회사 기판 온도 제어 장치, 그를 포함하는 기판 처리 장치 및 그 제어 방법
CN107782767B (zh) * 2016-08-26 2022-01-07 深迪半导体(绍兴)有限公司 一种气体传感器加热盘及加工方法
CN108231572A (zh) * 2016-12-21 2018-06-29 有研半导体材料有限公司 一种用于硅电极腐蚀的方法
US20180197761A1 (en) * 2017-01-10 2018-07-12 Axcelis Technologies, Inc. Active workpiece heating or cooling for an ion implantation system
JP7008497B2 (ja) * 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
KR101940287B1 (ko) * 2018-02-08 2019-01-18 (주)테키스트 반도체 제조용 온도 조절 장치
JP2021521648A (ja) * 2018-04-17 2021-08-26 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 加熱されるセラミック面板
KR102563925B1 (ko) * 2018-08-31 2023-08-04 삼성전자 주식회사 반도체 제조 장치
JP7134863B2 (ja) * 2018-12-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US12016092B2 (en) 2019-12-05 2024-06-18 Applied Materials, Inc. Gas distribution ceramic heater for deposition chamber
CN113097097A (zh) * 2019-12-23 2021-07-09 中微半导体设备(上海)股份有限公司 等离子体刻蚀装置及其工作方法
KR102593142B1 (ko) * 2020-05-19 2023-10-25 세메스 주식회사 기판 처리 장치 및 그의 페라이트 코어 온도 제어 방법
CN113921360B (zh) * 2020-07-10 2023-10-31 中微半导体设备(上海)股份有限公司 等离子体处理装置中的加热装置及抗射频干扰方法
US12191169B2 (en) * 2020-07-19 2025-01-07 Applied Materials, Inc. Systems and methods for faceplate temperature control
US12451331B2 (en) * 2020-09-22 2025-10-21 Applied Materials, Inc. Showerhead assembly with recursive gas channels
KR20220095677A (ko) * 2020-12-30 2022-07-07 세메스 주식회사 온도 측정 유닛을 포함하는 공정 챔버 및 온도 측정 유닛을 포함하는 기판 처리 장치
JP7560215B2 (ja) * 2021-03-17 2024-10-02 東京エレクトロン株式会社 プラズマ処理装置
WO2023283375A1 (en) * 2021-07-08 2023-01-12 Applied Materials, Inc. Showerhead assembly with recursive gas channels
KR20240090232A (ko) * 2021-10-05 2024-06-21 도쿄엘렉트론가부시키가이샤 상부 전극 구조 및 플라즈마 처리 장치
CN115050627B (zh) * 2022-06-29 2025-09-16 北京北方华创微电子装备有限公司 用于半导体工艺腔室的上电极组件及该半导体工艺腔室
CN116241928A (zh) * 2023-02-07 2023-06-09 北新集团建材股份有限公司 发热采暖板、具有其的装置及房屋
CN118553593B (zh) * 2024-07-24 2024-10-29 深圳市新凯来工业机器有限公司 一种上电极、等离子体刻蚀设备及温度控制方法

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