KR101060774B1 - 전극 유닛, 기판 처리 장치 및 전극 유닛의 온도 제어 방법 - Google Patents

전극 유닛, 기판 처리 장치 및 전극 유닛의 온도 제어 방법 Download PDF

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KR101060774B1
KR101060774B1 KR1020090018609A KR20090018609A KR101060774B1 KR 101060774 B1 KR101060774 B1 KR 101060774B1 KR 1020090018609 A KR1020090018609 A KR 1020090018609A KR 20090018609 A KR20090018609 A KR 20090018609A KR 101060774 B1 KR101060774 B1 KR 101060774B1
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layer
heat transfer
electrode
electrode unit
cooling
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Korean (ko)
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KR20090095515A (ko
Inventor
츠요시 히다
준 오야부
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020090018609A 2008-03-05 2009-03-04 전극 유닛, 기판 처리 장치 및 전극 유닛의 온도 제어 방법 Active KR101060774B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-054621 2008-03-05
JP2008054621A JP5224855B2 (ja) 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法

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KR20090095515A KR20090095515A (ko) 2009-09-09
KR101060774B1 true KR101060774B1 (ko) 2011-08-30

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US (2) US20090223932A1 (enExample)
JP (1) JP5224855B2 (enExample)
KR (1) KR101060774B1 (enExample)
CN (1) CN101527262B (enExample)
TW (1) TWI521589B (enExample)

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WO2014052301A1 (en) * 2012-09-26 2014-04-03 Applied Materials, Inc. Controlling temperature in substrate processing systems
US10669629B2 (en) 2015-10-09 2020-06-02 Applied Materials, Inc. Showerhead assembly with multiple fluid delivery zones

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US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) * 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
SG169960A1 (en) 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
JP5302834B2 (ja) * 2009-09-24 2013-10-02 株式会社アルバック プラズマ処理装置
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
KR101295794B1 (ko) * 2011-05-31 2013-08-09 세메스 주식회사 기판 처리 장치
JP5905735B2 (ja) * 2012-02-21 2016-04-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
US8975817B2 (en) * 2012-10-17 2015-03-10 Lam Research Corporation Pressure controlled heat pipe temperature control plate
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
US9945033B2 (en) 2014-01-06 2018-04-17 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized RF shield for plasma profile control
CN104952682A (zh) * 2014-03-25 2015-09-30 中微半导体设备(上海)有限公司 一种等离子体处理腔室及其基台
CN106876303B (zh) * 2014-09-01 2019-09-13 上海华力微电子有限公司 一种刻蚀方法
KR20170073757A (ko) * 2015-12-18 2017-06-29 삼성전자주식회사 플라즈마 처리 장치용 상부 전극 및 이를 포함하는 플라즈마 처리 장치
KR20170123830A (ko) * 2016-04-29 2017-11-09 세메스 주식회사 기판 온도 제어 장치, 그를 포함하는 기판 처리 장치 및 그 제어 방법
CN107782767B (zh) * 2016-08-26 2022-01-07 深迪半导体(绍兴)有限公司 一种气体传感器加热盘及加工方法
CN108231572A (zh) * 2016-12-21 2018-06-29 有研半导体材料有限公司 一种用于硅电极腐蚀的方法
US20180197761A1 (en) * 2017-01-10 2018-07-12 Axcelis Technologies, Inc. Active workpiece heating or cooling for an ion implantation system
JP7008497B2 (ja) * 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
KR101940287B1 (ko) * 2018-02-08 2019-01-18 (주)테키스트 반도체 제조용 온도 조절 장치
SG11202009888RA (en) * 2018-04-17 2020-11-27 Applied Materials Inc Heated ceramic faceplate
KR102563925B1 (ko) * 2018-08-31 2023-08-04 삼성전자 주식회사 반도체 제조 장치
JP7134863B2 (ja) 2018-12-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
WO2021113184A1 (en) * 2019-12-05 2021-06-10 Applied Materials, Inc. Gas distribution ceramic heater for deposition chamber
CN113097097A (zh) * 2019-12-23 2021-07-09 中微半导体设备(上海)股份有限公司 等离子体刻蚀装置及其工作方法
KR102593142B1 (ko) 2020-05-19 2023-10-25 세메스 주식회사 기판 처리 장치 및 그의 페라이트 코어 온도 제어 방법
CN113921360B (zh) * 2020-07-10 2023-10-31 中微半导体设备(上海)股份有限公司 等离子体处理装置中的加热装置及抗射频干扰方法
US12191169B2 (en) * 2020-07-19 2025-01-07 Applied Materials, Inc. Systems and methods for faceplate temperature control
US12451331B2 (en) * 2020-09-22 2025-10-21 Applied Materials, Inc. Showerhead assembly with recursive gas channels
KR20220095677A (ko) * 2020-12-30 2022-07-07 세메스 주식회사 온도 측정 유닛을 포함하는 공정 챔버 및 온도 측정 유닛을 포함하는 기판 처리 장치
JP7560215B2 (ja) * 2021-03-17 2024-10-02 東京エレクトロン株式会社 プラズマ処理装置
CN117616538A (zh) * 2021-07-08 2024-02-27 应用材料公司 具有递归气体通道的喷头组件
CN118043945A (zh) * 2021-10-05 2024-05-14 东京毅力科创株式会社 上部电极构造和等离子体处理装置
CN115050627B (zh) * 2022-06-29 2025-09-16 北京北方华创微电子装备有限公司 用于半导体工艺腔室的上电极组件及该半导体工艺腔室
CN116241928A (zh) * 2023-02-07 2023-06-09 北新集团建材股份有限公司 发热采暖板、具有其的装置及房屋
CN118553593B (zh) * 2024-07-24 2024-10-29 深圳市新凯来工业机器有限公司 一种上电极、等离子体刻蚀设备及温度控制方法

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US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
JP4186644B2 (ja) * 2003-02-17 2008-11-26 株式会社Ｉｈｉ 真空処理装置の冷却装置
JP4493932B2 (ja) * 2003-05-13 2010-06-30 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014052301A1 (en) * 2012-09-26 2014-04-03 Applied Materials, Inc. Controlling temperature in substrate processing systems
KR20150060860A (ko) * 2012-09-26 2015-06-03 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 시스템들에서의 온도 제어
US10544508B2 (en) 2012-09-26 2020-01-28 Applied Materials, Inc. Controlling temperature in substrate processing systems
KR102139230B1 (ko) 2012-09-26 2020-07-29 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 시스템들에서의 온도 제어
US10669629B2 (en) 2015-10-09 2020-06-02 Applied Materials, Inc. Showerhead assembly with multiple fluid delivery zones
US11293099B2 (en) 2015-10-09 2022-04-05 Applied Materials, Inc. Showerhead assembly with multiple fluid delivery zones

Also Published As

Publication number Publication date
JP2009212340A (ja) 2009-09-17
CN101527262A (zh) 2009-09-09
TW201001528A (en) 2010-01-01
TWI521589B (zh) 2016-02-11
KR20090095515A (ko) 2009-09-09
US20090223932A1 (en) 2009-09-10
CN101527262B (zh) 2011-05-11
US20120273135A1 (en) 2012-11-01
JP5224855B2 (ja) 2013-07-03

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