JP5224855B2 - 電極ユニット、基板処理装置及び電極ユニットの温度制御方法 - Google Patents

電極ユニット、基板処理装置及び電極ユニットの温度制御方法 Download PDF

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JP5224855B2
JP5224855B2 JP2008054621A JP2008054621A JP5224855B2 JP 5224855 B2 JP5224855 B2 JP 5224855B2 JP 2008054621 A JP2008054621 A JP 2008054621A JP 2008054621 A JP2008054621 A JP 2008054621A JP 5224855 B2 JP5224855 B2 JP 5224855B2
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layer
heat transfer
electrode
plasma
electrode unit
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JP2008054621A
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Japanese (ja)
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JP2009212340A (ja
JP2009212340A5 (enExample
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剛 肥田
淳 大藪
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008054621A priority Critical patent/JP5224855B2/ja
Priority to CN2009100089283A priority patent/CN101527262B/zh
Priority to KR1020090018609A priority patent/KR101060774B1/ko
Priority to US12/397,708 priority patent/US20090223932A1/en
Priority to TW098106984A priority patent/TWI521589B/zh
Publication of JP2009212340A publication Critical patent/JP2009212340A/ja
Publication of JP2009212340A5 publication Critical patent/JP2009212340A5/ja
Priority to US13/544,875 priority patent/US20120273135A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2008054621A 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法 Expired - Fee Related JP5224855B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008054621A JP5224855B2 (ja) 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法
CN2009100089283A CN101527262B (zh) 2008-03-05 2009-02-12 电极单元、基板处理装置及电极单元的温度控制方法
US12/397,708 US20090223932A1 (en) 2008-03-05 2009-03-04 Electrode unit, substrate processing apparatus, and temperature control method for electrode unit
TW098106984A TWI521589B (zh) 2008-03-05 2009-03-04 An electrode unit, a substrate processing device, and an electrode unit
KR1020090018609A KR101060774B1 (ko) 2008-03-05 2009-03-04 전극 유닛, 기판 처리 장치 및 전극 유닛의 온도 제어 방법
US13/544,875 US20120273135A1 (en) 2008-03-05 2012-07-09 Electrode unit, substrate processing apparatus, and temperature control method for electrode unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008054621A JP5224855B2 (ja) 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013047765A Division JP2013110440A (ja) 2013-03-11 2013-03-11 電極ユニット及び基板処理装置

Publications (3)

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JP2009212340A JP2009212340A (ja) 2009-09-17
JP2009212340A5 JP2009212340A5 (enExample) 2011-04-21
JP5224855B2 true JP5224855B2 (ja) 2013-07-03

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US (2) US20090223932A1 (enExample)
JP (1) JP5224855B2 (enExample)
KR (1) KR101060774B1 (enExample)
CN (1) CN101527262B (enExample)
TW (1) TWI521589B (enExample)

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Also Published As

Publication number Publication date
KR20090095515A (ko) 2009-09-09
TWI521589B (zh) 2016-02-11
CN101527262A (zh) 2009-09-09
JP2009212340A (ja) 2009-09-17
US20120273135A1 (en) 2012-11-01
KR101060774B1 (ko) 2011-08-30
CN101527262B (zh) 2011-05-11
US20090223932A1 (en) 2009-09-10
TW201001528A (en) 2010-01-01

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