TWI521589B - An electrode unit, a substrate processing device, and an electrode unit - Google Patents
An electrode unit, a substrate processing device, and an electrode unit Download PDFInfo
- Publication number
- TWI521589B TWI521589B TW098106984A TW98106984A TWI521589B TW I521589 B TWI521589 B TW I521589B TW 098106984 A TW098106984 A TW 098106984A TW 98106984 A TW98106984 A TW 98106984A TW I521589 B TWI521589 B TW I521589B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- heat transfer
- electrode
- plasma
- cooling
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 93
- 239000000758 substrate Substances 0.000 title claims description 40
- 238000012546 transfer Methods 0.000 claims description 182
- 238000001816 cooling Methods 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 72
- 238000010438 heat treatment Methods 0.000 claims description 67
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 104
- 235000012431 wafers Nutrition 0.000 description 31
- 238000001020 plasma etching Methods 0.000 description 15
- 238000009832 plasma treatment Methods 0.000 description 10
- 239000000872 buffer Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 7
- 238000007599 discharging Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000009827 uniform distribution Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 239000003245 coal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008054621A JP5224855B2 (ja) | 2008-03-05 | 2008-03-05 | 電極ユニット、基板処理装置及び電極ユニットの温度制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001528A TW201001528A (en) | 2010-01-01 |
| TWI521589B true TWI521589B (zh) | 2016-02-11 |
Family
ID=41052524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098106984A TWI521589B (zh) | 2008-03-05 | 2009-03-04 | An electrode unit, a substrate processing device, and an electrode unit |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20090223932A1 (enExample) |
| JP (1) | JP5224855B2 (enExample) |
| KR (1) | KR101060774B1 (enExample) |
| CN (1) | CN101527262B (enExample) |
| TW (1) | TWI521589B (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8221582B2 (en) * | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8206506B2 (en) * | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
| US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
| US8272346B2 (en) * | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
| US8419959B2 (en) | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| JP5302834B2 (ja) * | 2009-09-24 | 2013-10-02 | 株式会社アルバック | プラズマ処理装置 |
| KR200464037Y1 (ko) | 2009-10-13 | 2012-12-07 | 램 리써치 코포레이션 | 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극 |
| US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
| KR101295794B1 (ko) * | 2011-05-31 | 2013-08-09 | 세메스 주식회사 | 기판 처리 장치 |
| JP5905735B2 (ja) * | 2012-02-21 | 2016-04-20 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法 |
| JP2015536043A (ja) | 2012-09-26 | 2015-12-17 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 基板処理システムにおける温度制御 |
| US8975817B2 (en) * | 2012-10-17 | 2015-03-10 | Lam Research Corporation | Pressure controlled heat pipe temperature control plate |
| US9416450B2 (en) * | 2012-10-24 | 2016-08-16 | Applied Materials, Inc. | Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber |
| US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
| US9945033B2 (en) * | 2014-01-06 | 2018-04-17 | Applied Materials, Inc. | High efficiency inductively coupled plasma source with customized RF shield for plasma profile control |
| CN104952682A (zh) * | 2014-03-25 | 2015-09-30 | 中微半导体设备(上海)有限公司 | 一种等离子体处理腔室及其基台 |
| CN106876303B (zh) * | 2014-09-01 | 2019-09-13 | 上海华力微电子有限公司 | 一种刻蚀方法 |
| US10233543B2 (en) | 2015-10-09 | 2019-03-19 | Applied Materials, Inc. | Showerhead assembly with multiple fluid delivery zones |
| KR20170073757A (ko) * | 2015-12-18 | 2017-06-29 | 삼성전자주식회사 | 플라즈마 처리 장치용 상부 전극 및 이를 포함하는 플라즈마 처리 장치 |
| KR20170123830A (ko) * | 2016-04-29 | 2017-11-09 | 세메스 주식회사 | 기판 온도 제어 장치, 그를 포함하는 기판 처리 장치 및 그 제어 방법 |
| CN107782767B (zh) * | 2016-08-26 | 2022-01-07 | 深迪半导体(绍兴)有限公司 | 一种气体传感器加热盘及加工方法 |
| CN108231572A (zh) * | 2016-12-21 | 2018-06-29 | 有研半导体材料有限公司 | 一种用于硅电极腐蚀的方法 |
| US20180197761A1 (en) * | 2017-01-10 | 2018-07-12 | Axcelis Technologies, Inc. | Active workpiece heating or cooling for an ion implantation system |
| JP7008497B2 (ja) * | 2017-12-22 | 2022-01-25 | 東京エレクトロン株式会社 | 基板処理装置および温度制御方法 |
| KR101940287B1 (ko) * | 2018-02-08 | 2019-01-18 | (주)테키스트 | 반도체 제조용 온도 조절 장치 |
| JP2021521648A (ja) * | 2018-04-17 | 2021-08-26 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 加熱されるセラミック面板 |
| KR102563925B1 (ko) * | 2018-08-31 | 2023-08-04 | 삼성전자 주식회사 | 반도체 제조 장치 |
| JP7134863B2 (ja) * | 2018-12-27 | 2022-09-12 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US12016092B2 (en) | 2019-12-05 | 2024-06-18 | Applied Materials, Inc. | Gas distribution ceramic heater for deposition chamber |
| CN113097097A (zh) * | 2019-12-23 | 2021-07-09 | 中微半导体设备(上海)股份有限公司 | 等离子体刻蚀装置及其工作方法 |
| KR102593142B1 (ko) * | 2020-05-19 | 2023-10-25 | 세메스 주식회사 | 기판 처리 장치 및 그의 페라이트 코어 온도 제어 방법 |
| CN113921360B (zh) * | 2020-07-10 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置中的加热装置及抗射频干扰方法 |
| US12191169B2 (en) * | 2020-07-19 | 2025-01-07 | Applied Materials, Inc. | Systems and methods for faceplate temperature control |
| US12451331B2 (en) * | 2020-09-22 | 2025-10-21 | Applied Materials, Inc. | Showerhead assembly with recursive gas channels |
| KR20220095677A (ko) * | 2020-12-30 | 2022-07-07 | 세메스 주식회사 | 온도 측정 유닛을 포함하는 공정 챔버 및 온도 측정 유닛을 포함하는 기판 처리 장치 |
| JP7560215B2 (ja) * | 2021-03-17 | 2024-10-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2023283375A1 (en) * | 2021-07-08 | 2023-01-12 | Applied Materials, Inc. | Showerhead assembly with recursive gas channels |
| KR20240090232A (ko) * | 2021-10-05 | 2024-06-21 | 도쿄엘렉트론가부시키가이샤 | 상부 전극 구조 및 플라즈마 처리 장치 |
| CN115050627B (zh) * | 2022-06-29 | 2025-09-16 | 北京北方华创微电子装备有限公司 | 用于半导体工艺腔室的上电极组件及该半导体工艺腔室 |
| CN116241928A (zh) * | 2023-02-07 | 2023-06-09 | 北新集团建材股份有限公司 | 发热采暖板、具有其的装置及房屋 |
| CN118553593B (zh) * | 2024-07-24 | 2024-10-29 | 深圳市新凯来工业机器有限公司 | 一种上电极、等离子体刻蚀设备及温度控制方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4612077A (en) * | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
| JPH09209155A (ja) * | 1996-01-30 | 1997-08-12 | Kokusai Electric Co Ltd | プラズマ処理装置 |
| JP2001068538A (ja) * | 1999-06-21 | 2001-03-16 | Tokyo Electron Ltd | 電極構造、載置台構造、プラズマ処理装置及び処理装置 |
| JP4323021B2 (ja) * | 1999-09-13 | 2009-09-02 | 株式会社エフオーアイ | プラズマ処理装置 |
| US6786175B2 (en) * | 2001-08-08 | 2004-09-07 | Lam Research Corporation | Showerhead electrode design for semiconductor processing reactor |
| JP4186644B2 (ja) * | 2003-02-17 | 2008-11-26 | 株式会社Ｉｈｉ | 真空処理装置の冷却装置 |
| JP4493932B2 (ja) * | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | 上部電極及びプラズマ処理装置 |
| US7846254B2 (en) * | 2003-05-16 | 2010-12-07 | Applied Materials, Inc. | Heat transfer assembly |
| US7712434B2 (en) * | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
| US8317968B2 (en) * | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
| US20060213763A1 (en) * | 2005-03-25 | 2006-09-28 | Tokyo Electron Limited | Temperature control method and apparatus, and plasma processing apparatus |
| US8375890B2 (en) * | 2007-03-19 | 2013-02-19 | Micron Technology, Inc. | Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers |
-
2008
- 2008-03-05 JP JP2008054621A patent/JP5224855B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-12 CN CN2009100089283A patent/CN101527262B/zh not_active Expired - Fee Related
- 2009-03-04 US US12/397,708 patent/US20090223932A1/en not_active Abandoned
- 2009-03-04 KR KR1020090018609A patent/KR101060774B1/ko active Active
- 2009-03-04 TW TW098106984A patent/TWI521589B/zh active
-
2012
- 2012-07-09 US US13/544,875 patent/US20120273135A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP5224855B2 (ja) | 2013-07-03 |
| KR20090095515A (ko) | 2009-09-09 |
| CN101527262A (zh) | 2009-09-09 |
| JP2009212340A (ja) | 2009-09-17 |
| US20120273135A1 (en) | 2012-11-01 |
| KR101060774B1 (ko) | 2011-08-30 |
| CN101527262B (zh) | 2011-05-11 |
| US20090223932A1 (en) | 2009-09-10 |
| TW201001528A (en) | 2010-01-01 |
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