CN101527262B - 电极单元、基板处理装置及电极单元的温度控制方法 - Google Patents

电极单元、基板处理装置及电极单元的温度控制方法 Download PDF

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Publication number
CN101527262B
CN101527262B CN2009100089283A CN200910008928A CN101527262B CN 101527262 B CN101527262 B CN 101527262B CN 2009100089283 A CN2009100089283 A CN 2009100089283A CN 200910008928 A CN200910008928 A CN 200910008928A CN 101527262 B CN101527262 B CN 101527262B
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layer
heat transfer
electrode
electrode unit
processing chamber
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CN101527262A (zh
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肥田刚
大藪淳
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2009100089283A 2008-03-05 2009-02-12 电极单元、基板处理装置及电极单元的温度控制方法 Expired - Fee Related CN101527262B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008054621A JP5224855B2 (ja) 2008-03-05 2008-03-05 電極ユニット、基板処理装置及び電極ユニットの温度制御方法
JP2008-054621 2008-03-05
JP2008054621 2008-03-05

Publications (2)

Publication Number Publication Date
CN101527262A CN101527262A (zh) 2009-09-09
CN101527262B true CN101527262B (zh) 2011-05-11

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US (2) US20090223932A1 (enExample)
JP (1) JP5224855B2 (enExample)
KR (1) KR101060774B1 (enExample)
CN (1) CN101527262B (enExample)
TW (1) TWI521589B (enExample)

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JP2015536043A (ja) 2012-09-26 2015-12-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板処理システムにおける温度制御
US8975817B2 (en) * 2012-10-17 2015-03-10 Lam Research Corporation Pressure controlled heat pipe temperature control plate
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CN106876303B (zh) * 2014-09-01 2019-09-13 上海华力微电子有限公司 一种刻蚀方法
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KR20170123830A (ko) * 2016-04-29 2017-11-09 세메스 주식회사 기판 온도 제어 장치, 그를 포함하는 기판 처리 장치 및 그 제어 방법
CN107782767B (zh) * 2016-08-26 2022-01-07 深迪半导体(绍兴)有限公司 一种气体传感器加热盘及加工方法
CN108231572A (zh) * 2016-12-21 2018-06-29 有研半导体材料有限公司 一种用于硅电极腐蚀的方法
US20180197761A1 (en) * 2017-01-10 2018-07-12 Axcelis Technologies, Inc. Active workpiece heating or cooling for an ion implantation system
JP7008497B2 (ja) * 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
KR101940287B1 (ko) * 2018-02-08 2019-01-18 (주)테키스트 반도체 제조용 온도 조절 장치
JP2021521648A (ja) * 2018-04-17 2021-08-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 加熱されるセラミック面板
KR102563925B1 (ko) * 2018-08-31 2023-08-04 삼성전자 주식회사 반도체 제조 장치
JP7134863B2 (ja) * 2018-12-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US12016092B2 (en) 2019-12-05 2024-06-18 Applied Materials, Inc. Gas distribution ceramic heater for deposition chamber
CN113097097A (zh) * 2019-12-23 2021-07-09 中微半导体设备(上海)股份有限公司 等离子体刻蚀装置及其工作方法
KR102593142B1 (ko) * 2020-05-19 2023-10-25 세메스 주식회사 기판 처리 장치 및 그의 페라이트 코어 온도 제어 방법
CN113921360B (zh) * 2020-07-10 2023-10-31 中微半导体设备(上海)股份有限公司 等离子体处理装置中的加热装置及抗射频干扰方法
US12191169B2 (en) * 2020-07-19 2025-01-07 Applied Materials, Inc. Systems and methods for faceplate temperature control
US12451331B2 (en) * 2020-09-22 2025-10-21 Applied Materials, Inc. Showerhead assembly with recursive gas channels
KR20220095677A (ko) * 2020-12-30 2022-07-07 세메스 주식회사 온도 측정 유닛을 포함하는 공정 챔버 및 온도 측정 유닛을 포함하는 기판 처리 장치
JP7560215B2 (ja) * 2021-03-17 2024-10-02 東京エレクトロン株式会社 プラズマ処理装置
WO2023283375A1 (en) * 2021-07-08 2023-01-12 Applied Materials, Inc. Showerhead assembly with recursive gas channels
KR20240090232A (ko) * 2021-10-05 2024-06-21 도쿄엘렉트론가부시키가이샤 상부 전극 구조 및 플라즈마 처리 장치
CN115050627B (zh) * 2022-06-29 2025-09-16 北京北方华创微电子装备有限公司 用于半导体工艺腔室的上电极组件及该半导体工艺腔室
CN116241928A (zh) * 2023-02-07 2023-06-09 北新集团建材股份有限公司 发热采暖板、具有其的装置及房屋
CN118553593B (zh) * 2024-07-24 2024-10-29 深圳市新凯来工业机器有限公司 一种上电极、等离子体刻蚀设备及温度控制方法

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Also Published As

Publication number Publication date
JP5224855B2 (ja) 2013-07-03
KR20090095515A (ko) 2009-09-09
TWI521589B (zh) 2016-02-11
CN101527262A (zh) 2009-09-09
JP2009212340A (ja) 2009-09-17
US20120273135A1 (en) 2012-11-01
KR101060774B1 (ko) 2011-08-30
US20090223932A1 (en) 2009-09-10
TW201001528A (en) 2010-01-01

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Termination date: 20180212