JP2009196078A5 - - Google Patents
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- Publication number
- JP2009196078A5 JP2009196078A5 JP2008282499A JP2008282499A JP2009196078A5 JP 2009196078 A5 JP2009196078 A5 JP 2009196078A5 JP 2008282499 A JP2008282499 A JP 2008282499A JP 2008282499 A JP2008282499 A JP 2008282499A JP 2009196078 A5 JP2009196078 A5 JP 2009196078A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating
- component according
- electrical component
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000035699 permeability Effects 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229920005989 resin Polymers 0.000 claims 3
- 239000011347 resin Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 150000003377 silicon compounds Chemical class 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910018557 Si O Inorganic materials 0.000 claims 1
- 229910007991 Si-N Inorganic materials 0.000 claims 1
- 229910006294 Si—N Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000009719 polyimide resin Substances 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008282499A JP4581011B2 (ja) | 2008-01-25 | 2008-10-31 | 電気部品とその製造方法 |
| TW098102544A TWI385784B (zh) | 2008-01-25 | 2009-01-22 | 半導體積體電路內建的電子裝置 |
| KR1020090005991A KR101057905B1 (ko) | 2008-01-25 | 2009-01-23 | 반도체 집적 회로에 내장되는 전기 디바이스 |
| US12/358,869 US8309858B2 (en) | 2008-01-25 | 2009-01-23 | Electrical device including a functional element in a cavity |
| CN201110253951.6A CN102336392B (zh) | 2008-01-25 | 2009-02-01 | 构建到半导体集成电路中的电器件 |
| CN2009100032764A CN101492149B (zh) | 2008-01-25 | 2009-02-01 | 构建到半导体集成电路中的电器件 |
| US13/647,845 US8829359B2 (en) | 2008-01-25 | 2012-10-09 | Electrical device including a functional element in a cavity |
| US14/462,262 US9676608B2 (en) | 2008-01-25 | 2014-08-18 | Electrical device including a functional element in a cavity |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008015510 | 2008-01-25 | ||
| JP2008282499A JP4581011B2 (ja) | 2008-01-25 | 2008-10-31 | 電気部品とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009196078A JP2009196078A (ja) | 2009-09-03 |
| JP2009196078A5 true JP2009196078A5 (enExample) | 2010-05-13 |
| JP4581011B2 JP4581011B2 (ja) | 2010-11-17 |
Family
ID=40898069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008282499A Expired - Fee Related JP4581011B2 (ja) | 2008-01-25 | 2008-10-31 | 電気部品とその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US8309858B2 (enExample) |
| JP (1) | JP4581011B2 (enExample) |
| KR (1) | KR101057905B1 (enExample) |
| CN (2) | CN101492149B (enExample) |
| TW (1) | TWI385784B (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010219377A (ja) * | 2009-03-18 | 2010-09-30 | Toshiba Corp | 半導体発光装置及びその製造方法 |
| JP2011049303A (ja) * | 2009-08-26 | 2011-03-10 | Toshiba Corp | 電気部品およびその製造方法 |
| US8569091B2 (en) * | 2009-08-27 | 2013-10-29 | International Business Machines Corporation | Integrated circuit switches, design structure and methods of fabricating the same |
| JP2011083881A (ja) * | 2009-10-19 | 2011-04-28 | Toshiba Corp | Memsデバイスの製造方法、memsデバイス |
| JP5479227B2 (ja) * | 2010-05-28 | 2014-04-23 | 株式会社東芝 | 半導体装置 |
| JP5204171B2 (ja) | 2010-08-25 | 2013-06-05 | 株式会社東芝 | 電気部品およびその製造方法 |
| JP5578012B2 (ja) * | 2010-10-15 | 2014-08-27 | 三菱電機株式会社 | エアブリッジの製造方法 |
| US8878071B2 (en) * | 2011-01-20 | 2014-11-04 | International Business Machines Corporation | Integrated device with defined heat flow |
| JP5760502B2 (ja) * | 2011-02-25 | 2015-08-12 | 富士通株式会社 | 電子デバイスとその製造方法 |
| JP2014057125A (ja) * | 2012-09-11 | 2014-03-27 | Seiko Epson Corp | 電子装置およびその製造方法、並びに発振器 |
| JP2014155980A (ja) * | 2013-02-15 | 2014-08-28 | Toshiba Corp | 電気部品およびその製造方法 |
| JP2014184513A (ja) | 2013-03-22 | 2014-10-02 | Toshiba Corp | 電気部品およびその製造方法 |
| JP2014200857A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社東芝 | Mems装置及びその製造方法 |
| US9955949B2 (en) | 2013-08-23 | 2018-05-01 | Canon Kabushiki Kaisha | Method for manufacturing a capacitive transducer |
| JP5985451B2 (ja) * | 2013-09-06 | 2016-09-06 | 株式会社東芝 | Memsデバイス |
| US10163828B2 (en) * | 2013-11-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and fabricating method thereof |
| JP2015174154A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | Memsデバイスおよびその製造方法 |
| JP6314568B2 (ja) * | 2014-03-18 | 2018-04-25 | セイコーエプソン株式会社 | Memsデバイス及びその製造方法 |
| JP2015223689A (ja) * | 2014-05-30 | 2015-12-14 | 株式会社東芝 | 電子部品及びその製造方法 |
| CN105645349B (zh) * | 2014-12-04 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | Mems器件的形成方法 |
| TWI610406B (zh) * | 2015-02-09 | 2018-01-01 | 精材科技股份有限公司 | 晶片封裝體與其製備方法 |
| US10384929B2 (en) * | 2016-03-22 | 2019-08-20 | Murata Manufacturing Co., Ltd. | Impact element for a sensor device and a manufacturing method |
| JP6668286B2 (ja) | 2016-04-01 | 2020-03-18 | スカイワークスフィルターソリューションズジャパン株式会社 | 電子部品及びその製造方法と電子装置及びその製造方法 |
| JP6648637B2 (ja) * | 2016-05-24 | 2020-02-14 | Tdk株式会社 | 電子部品パッケージ |
| JP6685839B2 (ja) * | 2016-05-30 | 2020-04-22 | 株式会社東芝 | ガス検出装置 |
| WO2018133940A1 (en) | 2017-01-19 | 2018-07-26 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic element |
| CN106865489B (zh) * | 2017-02-14 | 2019-01-18 | 上海华虹宏力半导体制造有限公司 | Mems器件的制造方法 |
| JP6990997B2 (ja) * | 2017-06-06 | 2022-01-12 | 株式会社日立製作所 | Memsデバイス |
| DE112017008195B4 (de) * | 2017-11-14 | 2023-06-22 | Mitsubishi Electric Corporation | Halbleitereinrichtung und Verfahren zu deren Herstellung |
| DE102018118701B3 (de) * | 2018-08-01 | 2019-10-17 | RF360 Europe GmbH | BAW-Resonator mit verbesserter Verbindung der oberen Elektrode |
| KR102165882B1 (ko) * | 2018-12-28 | 2020-10-14 | 주식회사 제이피드림 | 박막 패키지 및 그의 형성방법 |
| JP7591886B2 (ja) * | 2020-03-18 | 2024-11-29 | 日本航空電子工業株式会社 | デバイス |
| CN111370375B (zh) * | 2020-03-23 | 2025-03-14 | 苏州晶方半导体科技股份有限公司 | 封装结构、半导体器件和封装方法 |
| JP7735629B2 (ja) * | 2020-05-25 | 2025-09-09 | ミネベアパワーデバイス株式会社 | 半導体装置および電力変換装置 |
| US11800643B2 (en) * | 2021-04-05 | 2023-10-24 | Japan Aviation Electronics Industry, Limited | Device having closed space between overlapping sealing members |
| JP7696372B2 (ja) * | 2022-08-15 | 2025-06-20 | エーエーシーアコースティックテクノロジーズ(シンセン)カンパニーリミテッド | Memsデバイスの製造方法及びmemsデバイス |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61123033A (ja) | 1984-11-20 | 1986-06-10 | Matsushita Electric Ind Co Ltd | 保護膜構造体 |
| JP2787953B2 (ja) * | 1989-08-03 | 1998-08-20 | イビデン株式会社 | 電子回路基板 |
| AU5869994A (en) | 1992-12-11 | 1994-07-04 | Regents Of The University Of California, The | Microelectromechanical signal processors |
| US5994166A (en) * | 1997-03-10 | 1999-11-30 | Micron Technology, Inc. | Method of constructing stacked packages |
| JP3705919B2 (ja) * | 1998-03-05 | 2005-10-12 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| US6163957A (en) * | 1998-11-13 | 2000-12-26 | Fujitsu Limited | Multilayer laminated substrates with high density interconnects and methods of making the same |
| FR2792440B1 (fr) * | 1999-04-19 | 2001-06-08 | Schlumberger Systems & Service | Dispositif a circuit integre securise contre des attaques procedant par destruction controlee d'une couche complementaire |
| US7008812B1 (en) | 2000-05-30 | 2006-03-07 | Ic Mechanics, Inc. | Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation |
| JP3874062B2 (ja) * | 2000-09-05 | 2007-01-31 | セイコーエプソン株式会社 | 半導体装置 |
| WO2002027786A1 (en) * | 2000-09-25 | 2002-04-04 | Ibiden Co., Ltd. | Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board |
| JP4024563B2 (ja) * | 2002-03-15 | 2007-12-19 | 株式会社日立製作所 | 半導体装置 |
| US7416281B2 (en) * | 2002-08-06 | 2008-08-26 | Ricoh Company, Ltd. | Electrostatic actuator formed by a semiconductor manufacturing process |
| TWI273090B (en) * | 2002-09-09 | 2007-02-11 | Mitsui Chemicals Inc | Method for modifying porous film, modified porous film and use of same |
| US6936494B2 (en) | 2002-10-23 | 2005-08-30 | Rutgers, The State University Of New Jersey | Processes for hermetically packaging wafer level microscopic structures |
| US7492019B2 (en) | 2003-03-07 | 2009-02-17 | Ic Mechanics, Inc. | Micromachined assembly with a multi-layer cap defining a cavity |
| WO2004077523A2 (en) * | 2003-02-25 | 2004-09-10 | Ic Mechanics, Inc. | Micromachined assembly with a multi-layer cap defining cavity |
| US7514283B2 (en) * | 2003-03-20 | 2009-04-07 | Robert Bosch Gmbh | Method of fabricating electromechanical device having a controlled atmosphere |
| US7075160B2 (en) | 2003-06-04 | 2006-07-11 | Robert Bosch Gmbh | Microelectromechanical systems and devices having thin film encapsulated mechanical structures |
| JP4544880B2 (ja) | 2003-09-25 | 2010-09-15 | 京セラ株式会社 | 微小電気機械式装置の封止方法 |
| JP2005207959A (ja) | 2004-01-26 | 2005-08-04 | Mitsubishi Electric Corp | 薄膜中空構造体 |
| US7145213B1 (en) * | 2004-05-24 | 2006-12-05 | The United States Of America As Represented By The Secretary Of The Air Force | MEMS RF switch integrated process |
| JP4020891B2 (ja) * | 2004-06-14 | 2007-12-12 | 三洋電機株式会社 | 素子搭載基板の製造方法 |
| JP4534622B2 (ja) | 2004-06-23 | 2010-09-01 | ソニー株式会社 | 機能素子およびその製造方法、流体吐出ヘッド、並びに印刷装置 |
| JP4426413B2 (ja) * | 2004-09-24 | 2010-03-03 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| CN102306635B (zh) | 2004-11-16 | 2015-09-09 | 罗姆股份有限公司 | 半导体装置及半导体装置的制造方法 |
| JP4323435B2 (ja) * | 2005-01-06 | 2009-09-02 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| US8389867B2 (en) * | 2005-09-30 | 2013-03-05 | Ibiden Co., Ltd. | Multilayered circuit substrate with semiconductor device incorporated therein |
| US20070158769A1 (en) | 2005-10-14 | 2007-07-12 | Cardiomems, Inc. | Integrated CMOS-MEMS technology for wired implantable sensors |
| JP4988217B2 (ja) | 2006-02-03 | 2012-08-01 | 株式会社日立製作所 | Mems構造体の製造方法 |
| JP2007222957A (ja) * | 2006-02-21 | 2007-09-06 | Seiko Epson Corp | Memsデバイスの製造方法 |
| JP2007222956A (ja) * | 2006-02-21 | 2007-09-06 | Seiko Epson Corp | Memsデバイスおよびmemsデバイスの製造方法 |
| US7781267B2 (en) * | 2006-05-19 | 2010-08-24 | International Business Machines Corporation | Enclosed nanotube structure and method for forming |
| JP5016884B2 (ja) * | 2006-09-29 | 2012-09-05 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| JP2008188711A (ja) * | 2007-02-05 | 2008-08-21 | Oki Electric Ind Co Ltd | 半導体装置製造方法 |
| TW200938479A (en) * | 2007-10-22 | 2009-09-16 | Toshiba Kk | Micromachine device and method of manufacturing the same |
| JP2010219377A (ja) | 2009-03-18 | 2010-09-30 | Toshiba Corp | 半導体発光装置及びその製造方法 |
-
2008
- 2008-10-31 JP JP2008282499A patent/JP4581011B2/ja not_active Expired - Fee Related
-
2009
- 2009-01-22 TW TW098102544A patent/TWI385784B/zh not_active IP Right Cessation
- 2009-01-23 KR KR1020090005991A patent/KR101057905B1/ko not_active Expired - Fee Related
- 2009-01-23 US US12/358,869 patent/US8309858B2/en active Active
- 2009-02-01 CN CN2009100032764A patent/CN101492149B/zh not_active Expired - Fee Related
- 2009-02-01 CN CN201110253951.6A patent/CN102336392B/zh not_active Expired - Fee Related
-
2012
- 2012-10-09 US US13/647,845 patent/US8829359B2/en active Active
-
2014
- 2014-08-18 US US14/462,262 patent/US9676608B2/en active Active
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