JP2012109566A5 - - Google Patents

Download PDF

Info

Publication number
JP2012109566A5
JP2012109566A5 JP2011240108A JP2011240108A JP2012109566A5 JP 2012109566 A5 JP2012109566 A5 JP 2012109566A5 JP 2011240108 A JP2011240108 A JP 2011240108A JP 2011240108 A JP2011240108 A JP 2011240108A JP 2012109566 A5 JP2012109566 A5 JP 2012109566A5
Authority
JP
Japan
Prior art keywords
layer
electrode
compound semiconductor
conductive adhesive
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011240108A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012109566A (ja
JP5855422B2 (ja
Filing date
Publication date
Priority claimed from KR1020100113478A external-priority patent/KR101194844B1/ko
Application filed filed Critical
Publication of JP2012109566A publication Critical patent/JP2012109566A/ja
Publication of JP2012109566A5 publication Critical patent/JP2012109566A5/ja
Application granted granted Critical
Publication of JP5855422B2 publication Critical patent/JP5855422B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011240108A 2010-11-15 2011-11-01 発光素子及びその製造方法 Expired - Fee Related JP5855422B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0113478 2010-11-15
KR1020100113478A KR101194844B1 (ko) 2010-11-15 2010-11-15 발광소자 및 그 제조방법

Publications (3)

Publication Number Publication Date
JP2012109566A JP2012109566A (ja) 2012-06-07
JP2012109566A5 true JP2012109566A5 (enExample) 2014-12-04
JP5855422B2 JP5855422B2 (ja) 2016-02-09

Family

ID=44905400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011240108A Expired - Fee Related JP5855422B2 (ja) 2010-11-15 2011-11-01 発光素子及びその製造方法

Country Status (6)

Country Link
US (2) US8735932B2 (enExample)
EP (1) EP2453492A2 (enExample)
JP (1) JP5855422B2 (enExample)
KR (1) KR101194844B1 (enExample)
CN (1) CN102569574B (enExample)
DE (1) DE102011086400A1 (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101194844B1 (ko) * 2010-11-15 2012-10-25 삼성전자주식회사 발광소자 및 그 제조방법
US9899329B2 (en) 2010-11-23 2018-02-20 X-Celeprint Limited Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance
US8934259B2 (en) 2011-06-08 2015-01-13 Semprius, Inc. Substrates with transferable chiplets
KR101891257B1 (ko) * 2012-04-02 2018-08-24 삼성전자주식회사 반도체 발광장치 및 그 제조방법
US20150187993A1 (en) * 2012-06-14 2015-07-02 Sang Jeong An Semiconductor light-emitting device and method for manufacturing the same
KR101303150B1 (ko) * 2012-06-14 2013-09-09 안상정 반도체 발광소자 및 이의 제조 방법
WO2014017871A2 (ko) 2012-07-26 2014-01-30 An Sang Jeong 반도체 발광소자
JP5900284B2 (ja) * 2012-10-25 2016-04-06 豊田合成株式会社 半導体発光素子および発光装置
JP5971090B2 (ja) * 2012-11-14 2016-08-17 豊田合成株式会社 半導体発光素子および発光装置
KR101976466B1 (ko) * 2013-01-10 2019-05-10 엘지이노텍 주식회사 발광소자
US9437782B2 (en) 2014-06-18 2016-09-06 X-Celeprint Limited Micro assembled LED displays and lighting elements
KR102275615B1 (ko) 2014-08-26 2021-07-09 엑스-셀레프린트 리미티드 마이크로 어셈블링된 하이브리드 디스플레이들 및 조명 엘리먼트들
US9818725B2 (en) 2015-06-01 2017-11-14 X-Celeprint Limited Inorganic-light-emitter display with integrated black matrix
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
US9991163B2 (en) 2014-09-25 2018-06-05 X-Celeprint Limited Small-aperture-ratio display with electrical component
DE102015107526A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Modul
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US10133426B2 (en) 2015-06-18 2018-11-20 X-Celeprint Limited Display with micro-LED front light
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
US9786646B2 (en) 2015-12-23 2017-10-10 X-Celeprint Limited Matrix addressed device repair
US10200013B2 (en) 2016-02-18 2019-02-05 X-Celeprint Limited Micro-transfer-printed acoustic wave filter device
US10361677B2 (en) 2016-02-18 2019-07-23 X-Celeprint Limited Transverse bulk acoustic wave filter
US10109753B2 (en) 2016-02-19 2018-10-23 X-Celeprint Limited Compound micro-transfer-printed optical filter device
US10217730B2 (en) 2016-02-25 2019-02-26 X-Celeprint Limited Efficiently micro-transfer printing micro-scale devices onto large-format substrates
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
US10150326B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid document with variable state
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
US10198890B2 (en) 2016-04-19 2019-02-05 X-Celeprint Limited Hybrid banknote with electronic indicia using near-field-communications
US9997102B2 (en) 2016-04-19 2018-06-12 X-Celeprint Limited Wirelessly powered display and system
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
EP3542394B1 (en) 2016-11-15 2025-09-24 X Display Company Technology Limited Micro-transfer-printable flip-chip structures and manufacturing methods thereof
US10600671B2 (en) 2016-11-15 2020-03-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10395966B2 (en) 2016-11-15 2019-08-27 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10438859B2 (en) 2016-12-19 2019-10-08 X-Celeprint Limited Transfer printed device repair
US10396137B2 (en) 2017-03-10 2019-08-27 X-Celeprint Limited Testing transfer-print micro-devices on wafer
US11024608B2 (en) 2017-03-28 2021-06-01 X Display Company Technology Limited Structures and methods for electrical connection of micro-devices and substrates
KR102712725B1 (ko) 2019-07-10 2024-10-02 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
CN115901888B (zh) * 2022-11-07 2024-08-20 厦门大学 一种利用二维平面纳米导电材料侧面的电化学一维纳米电极及其制备方法与应用
KR20250147816A (ko) * 2024-03-29 2025-10-14 삼성디스플레이 주식회사 표시 장치와 그의 제조 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4507358B2 (ja) * 2000-06-16 2010-07-21 日亜化学工業株式会社 光半導体素子
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
KR100631842B1 (ko) 2004-07-28 2006-10-09 삼성전기주식회사 질화물 반도체 발광소자
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
TWI420686B (zh) * 2004-12-10 2013-12-21 松下電器產業股份有限公司 半導體發光裝置、發光模組及照明裝置
US7736945B2 (en) * 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
EP1895600A1 (en) * 2005-06-20 2008-03-05 Rohm Co., Ltd. White semiconductor light emitting element and manufacturing method thereof
US8188497B2 (en) * 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
WO2009022808A2 (en) * 2007-08-13 2009-02-19 Lg Electronics Inc. Circuit board for light emitting device package and light emitting unit using the same
KR20090017391A (ko) * 2007-08-13 2009-02-18 엘지전자 주식회사 발광 소자용 회로 기판 및 그 발광 유닛
KR100891761B1 (ko) 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
US20090173956A1 (en) * 2007-12-14 2009-07-09 Philips Lumileds Lighting Company, Llc Contact for a semiconductor light emitting device
TWI372478B (en) * 2008-01-08 2012-09-11 Epistar Corp Light-emitting device
KR100953661B1 (ko) 2008-04-28 2010-04-20 주식회사 이츠웰 수직 전극 구조 발광 소자 및 그 제조 방법
KR100946441B1 (ko) 2008-05-07 2010-03-10 선문대학교 산학협력단 수직 전극구조를 갖는 발광소자 및 그 제조방법
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
TWI473246B (zh) 2008-12-30 2015-02-11 晶元光電股份有限公司 發光二極體晶粒等級封裝
DE102009019161A1 (de) 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드
KR101194844B1 (ko) * 2010-11-15 2012-10-25 삼성전자주식회사 발광소자 및 그 제조방법

Similar Documents

Publication Publication Date Title
JP2012109566A5 (enExample)
JP2010245259A5 (enExample)
JP2012039090A5 (enExample)
JP2010073683A5 (ja) 発光装置及びその作製方法
JP2013069808A5 (enExample)
JP2014239171A5 (ja) 発光素子、電子機器及び発光素子の製造方法
JP2011129920A5 (enExample)
JP2011187800A5 (enExample)
JP2014239186A5 (enExample)
JP2013069807A5 (enExample)
JP2011171739A5 (enExample)
JP2013033786A5 (ja) 半導体装置、半導体装置の製造方法、および電子機器
JP2009194322A5 (enExample)
JP2010147153A5 (enExample)
WO2009028578A3 (en) Semiconductor device including semiconductor constituent and manufacturing method thereof
TW201436684A (zh) 嵌埋有電子元件的線路板結構及其製法
JP2011009514A5 (enExample)
JP2013101996A5 (enExample)
JP2013153069A5 (enExample)
JP2012517709A5 (enExample)
JP2014127706A5 (ja) 半導体装置の製造方法
JP2007288050A5 (enExample)
TW201511347A (zh) 發光二極體封裝結構及其製造方法
JP2015185773A5 (enExample)
JP2020522117A5 (enExample)