JP2011238767A5 - - Google Patents

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Publication number
JP2011238767A5
JP2011238767A5 JP2010108688A JP2010108688A JP2011238767A5 JP 2011238767 A5 JP2011238767 A5 JP 2011238767A5 JP 2010108688 A JP2010108688 A JP 2010108688A JP 2010108688 A JP2010108688 A JP 2010108688A JP 2011238767 A5 JP2011238767 A5 JP 2011238767A5
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Japan
Prior art keywords
resin portion
semiconductor chip
resin
circuit forming
insulating layer
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JP2010108688A
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English (en)
Japanese (ja)
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JP2011238767A (ja
JP5584011B2 (ja
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Priority to JP2010108688A priority Critical patent/JP5584011B2/ja
Priority claimed from JP2010108688A external-priority patent/JP5584011B2/ja
Priority to US13/094,316 priority patent/US8431441B2/en
Publication of JP2011238767A publication Critical patent/JP2011238767A/ja
Publication of JP2011238767A5 publication Critical patent/JP2011238767A5/ja
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JP2010108688A 2010-05-10 2010-05-10 半導体パッケージの製造方法 Active JP5584011B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010108688A JP5584011B2 (ja) 2010-05-10 2010-05-10 半導体パッケージの製造方法
US13/094,316 US8431441B2 (en) 2010-05-10 2011-04-26 Semiconductor package and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010108688A JP5584011B2 (ja) 2010-05-10 2010-05-10 半導体パッケージの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014056420A Division JP5784775B2 (ja) 2014-03-19 2014-03-19 半導体パッケージ及びその製造方法

Publications (3)

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JP2011238767A JP2011238767A (ja) 2011-11-24
JP2011238767A5 true JP2011238767A5 (enExample) 2013-05-16
JP5584011B2 JP5584011B2 (ja) 2014-09-03

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US (1) US8431441B2 (enExample)
JP (1) JP5584011B2 (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698303B2 (en) 2010-11-23 2014-04-15 Ibiden Co., Ltd. Substrate for mounting semiconductor, semiconductor device and method for manufacturing semiconductor device
JP2012134270A (ja) * 2010-12-21 2012-07-12 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US9064883B2 (en) * 2011-08-25 2015-06-23 Intel Mobile Communications GmbH Chip with encapsulated sides and exposed surface
TWI446501B (zh) * 2012-01-20 2014-07-21 矽品精密工業股份有限公司 承載板、半導體封裝件及其製法
TWI476841B (zh) * 2012-03-03 2015-03-11 矽品精密工業股份有限公司 半導體封裝件及其製法
JP6124513B2 (ja) * 2012-05-17 2017-05-10 新光電気工業株式会社 半導体装置及びその製造方法
US9812350B2 (en) 2013-03-06 2017-11-07 Qorvo Us, Inc. Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer
US9583414B2 (en) 2013-10-31 2017-02-28 Qorvo Us, Inc. Silicon-on-plastic semiconductor device and method of making the same
JP6125317B2 (ja) 2013-05-09 2017-05-10 東京応化工業株式会社 モールド材の処理方法及び構造体の製造方法
JP6171583B2 (ja) * 2013-05-31 2017-08-02 富士通株式会社 電子装置及びその製造方法
US9837278B2 (en) * 2014-02-27 2017-12-05 Taiwan Semiconductor Manufacturing Company Ltd. Wafer level chip scale package and method of manufacturing the same
US9704769B2 (en) 2014-02-27 2017-07-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming encapsulated wafer level chip scale package (EWLCSP)
US20150311132A1 (en) * 2014-04-28 2015-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line structure and method of forming same
CN105684146B (zh) 2014-07-28 2019-01-18 英特尔公司 具有密集封装布线的多芯片模块半导体芯片封装
JP2016039214A (ja) * 2014-08-06 2016-03-22 イビデン株式会社 電子部品内蔵用キャビティ付き配線板及びその製造方法
US10085352B2 (en) 2014-10-01 2018-09-25 Qorvo Us, Inc. Method for manufacturing an integrated circuit package
US9530709B2 (en) 2014-11-03 2016-12-27 Qorvo Us, Inc. Methods of manufacturing a printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer
US9646953B2 (en) 2014-11-12 2017-05-09 Intel Corporation Integrated circuit packaging techniques and configurations for small form-factor or wearable devices
JP6487940B2 (ja) * 2014-11-27 2019-03-20 国立研究開発法人産業技術総合研究所 半導体パッケージ及びその製造方法
US9613831B2 (en) 2015-03-25 2017-04-04 Qorvo Us, Inc. Encapsulated dies with enhanced thermal performance
US20160343604A1 (en) 2015-05-22 2016-11-24 Rf Micro Devices, Inc. Substrate structure with embedded layer for post-processing silicon handle elimination
US10276495B2 (en) 2015-09-11 2019-04-30 Qorvo Us, Inc. Backside semiconductor die trimming
US10147645B2 (en) * 2015-09-22 2018-12-04 Nxp Usa, Inc. Wafer level chip scale package with encapsulant
US10020405B2 (en) 2016-01-19 2018-07-10 Qorvo Us, Inc. Microelectronics package with integrated sensors
US10204870B2 (en) 2016-04-28 2019-02-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10090262B2 (en) 2016-05-09 2018-10-02 Qorvo Us, Inc. Microelectronics package with inductive element and magnetically enhanced mold compound component
KR101858952B1 (ko) * 2016-05-13 2018-05-18 주식회사 네패스 반도체 패키지 및 이의 제조 방법
US10468329B2 (en) 2016-07-18 2019-11-05 Qorvo Us, Inc. Thermally enhanced semiconductor package having field effect transistors with back-gate feature
US10773952B2 (en) 2016-05-20 2020-09-15 Qorvo Us, Inc. Wafer-level package with enhanced performance
US10784149B2 (en) 2016-05-20 2020-09-22 Qorvo Us, Inc. Air-cavity module with enhanced device isolation
US10103080B2 (en) 2016-06-10 2018-10-16 Qorvo Us, Inc. Thermally enhanced semiconductor package with thermal additive and process for making the same
CN109844938B (zh) 2016-08-12 2023-07-18 Qorvo美国公司 具有增强性能的晶片级封装
CN109844937B (zh) 2016-08-12 2023-06-27 Qorvo美国公司 具有增强性能的晶片级封装
JP7022112B2 (ja) * 2016-08-12 2022-02-17 コーボ ユーエス,インコーポレイティド 性能を向上させたウェーハレベルパッケージ
US10109502B2 (en) 2016-09-12 2018-10-23 Qorvo Us, Inc. Semiconductor package with reduced parasitic coupling effects and process for making the same
US10090339B2 (en) 2016-10-21 2018-10-02 Qorvo Us, Inc. Radio frequency (RF) switch
US10749518B2 (en) 2016-11-18 2020-08-18 Qorvo Us, Inc. Stacked field-effect transistor switch
US10068831B2 (en) 2016-12-09 2018-09-04 Qorvo Us, Inc. Thermally enhanced semiconductor package and process for making the same
US10490471B2 (en) 2017-07-06 2019-11-26 Qorvo Us, Inc. Wafer-level packaging for enhanced performance
KR102216172B1 (ko) * 2017-07-14 2021-02-15 주식회사 엘지화학 절연층 제조방법 및 반도체 패키지 제조방법
US10366972B2 (en) 2017-09-05 2019-07-30 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US10784233B2 (en) 2017-09-05 2020-09-22 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US11152274B2 (en) 2017-09-11 2021-10-19 Advanced Semiconductor Engineering, Inc. Multi-moldings fan-out package and process
US11152363B2 (en) 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process
US12062700B2 (en) 2018-04-04 2024-08-13 Qorvo Us, Inc. Gallium-nitride-based module with enhanced electrical performance and process for making the same
US12046505B2 (en) 2018-04-20 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
US10804246B2 (en) 2018-06-11 2020-10-13 Qorvo Us, Inc. Microelectronics package with vertically stacked dies
US12165951B2 (en) 2018-07-02 2024-12-10 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
KR102454729B1 (ko) * 2018-07-10 2022-10-13 가부시키가이샤 후지 몰드체 및 패키지의 제조 방법, 및 몰드체 제조 장치
US11069590B2 (en) 2018-10-10 2021-07-20 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US10964554B2 (en) 2018-10-10 2021-03-30 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US11646242B2 (en) 2018-11-29 2023-05-09 Qorvo Us, Inc. Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
US10811298B2 (en) * 2018-12-31 2020-10-20 Micron Technology, Inc. Patterned carrier wafers and methods of making and using the same
US12125825B2 (en) 2019-01-23 2024-10-22 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046483B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
KR102771428B1 (ko) 2019-01-23 2025-02-26 코르보 유에스, 인크. Rf 반도체 디바이스 및 이를 형성하는 방법
US11387157B2 (en) 2019-01-23 2022-07-12 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046570B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12057374B2 (en) 2019-01-23 2024-08-06 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
JP6864875B2 (ja) 2019-08-30 2021-04-28 日亜化学工業株式会社 発光モジュール及びその製造方法
US12074086B2 (en) 2019-11-01 2024-08-27 Qorvo Us, Inc. RF devices with nanotube particles for enhanced performance and methods of forming the same
US11646289B2 (en) 2019-12-02 2023-05-09 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11923238B2 (en) 2019-12-12 2024-03-05 Qorvo Us, Inc. Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive
US12129168B2 (en) 2019-12-23 2024-10-29 Qorvo Us, Inc. Microelectronics package with vertically stacked MEMS device and controller device
EP4260369A2 (en) 2020-12-11 2023-10-18 Qorvo US, Inc. Multi-level 3d stacked package and methods of forming the same
WO2022186857A1 (en) 2021-03-05 2022-09-09 Qorvo Us, Inc. Selective etching process for si-ge and doped epitaxial silicon
CN218498069U (zh) * 2021-08-20 2023-02-17 意法半导体(克洛尔2)公司 集成电路
CN114531134B (zh) * 2022-04-22 2022-07-19 深圳新声半导体有限公司 一种用于薄膜滤波器芯片级封装的方法和结构
CN119864324B (zh) * 2025-03-25 2025-07-01 合肥沛顿存储科技有限公司 倒装芯片封装结构中芯片取出再利用的工艺方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277548A (ja) * 1999-03-23 2000-10-06 Rohm Co Ltd 半導体装置の製造方法
WO2002015266A2 (en) 2000-08-16 2002-02-21 Intel Corporation Direct build-up layer on an encapsulated die package
US6734534B1 (en) 2000-08-16 2004-05-11 Intel Corporation Microelectronic substrate with integrated devices
JP2002076237A (ja) * 2000-08-30 2002-03-15 Hitachi Maxell Ltd 半導体装置及びその製造方法
JP4016825B2 (ja) * 2002-12-09 2007-12-05 ソニー株式会社 半導体装置の製造方法
JP4057589B2 (ja) * 2003-03-25 2008-03-05 富士通株式会社 電子部品搭載基板の製造方法
JP4461801B2 (ja) * 2003-12-25 2010-05-12 カシオ計算機株式会社 半導体装置およびその製造方法
JP4265997B2 (ja) * 2004-07-14 2009-05-20 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
JP4602208B2 (ja) * 2004-12-15 2010-12-22 新光電気工業株式会社 電子部品実装構造体及びその製造方法
JP2008210912A (ja) * 2007-02-26 2008-09-11 Cmk Corp 半導体装置及びその製造方法
JPWO2008120755A1 (ja) * 2007-03-30 2010-07-15 日本電気株式会社 機能素子内蔵回路基板及びその製造方法、並びに電子機器

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