JP2009176763A - 半導体装置およびこれを有する半導体モジュール - Google Patents
半導体装置およびこれを有する半導体モジュール Download PDFInfo
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- JP2009176763A JP2009176763A JP2008010513A JP2008010513A JP2009176763A JP 2009176763 A JP2009176763 A JP 2009176763A JP 2008010513 A JP2008010513 A JP 2008010513A JP 2008010513 A JP2008010513 A JP 2008010513A JP 2009176763 A JP2009176763 A JP 2009176763A
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Abstract
【解決手段】半導体装置は、下面に複数の外部端子9を備えた第1の配線基板5と、第1の配線基板5の上面に下面が実装された第1の半導体チップ3と、第1の半導体チップ3の上面に下面が実装された第2の半導体チップ10と、を有する半導体装置において、第1の配線基板5の上面には、第1の半導体チップ3の下面に電気的に接続された接続パッド6aと、第1の半導体チップ3の端部に近接して配置された接続パッド6bと、が設けられ、接続パッド6aおよび接続パッド6bは外部端子9に電気的に接続されており、第2の半導体チップ10の上端部に当接または近接して配置され、第2の半導体チップ10の上面に電気的に接続された接続パッド6cと、接続パッド6bと接続パッド6cとを電気的に接続しているワイヤ12と、をさらに有している。
【選択図】図1
Description
(第1の実施形態)
図1は本発明の第1の実施形態に係る半導体装置の側断面図、図2はその半導体装置の上面図、図3はその半導体装置の下面図である。
(第2の実施形態)
図7は、本発明の第2の実施形態に係る半導体装置のバンプ電極およびその周辺部分の拡大側断面図である。本実施形態に係る半導体装置1aは、第1の配線基板5aおよび第2の配線基板11aに接続開口部17aが形成されている。第1の半導体チップ3aおよび第2の半導体チップ10aのバンプ電極4aは、第1の配線基板5aおよび第2の配線基板11aの各接続開口部17aに入り込んだ状態で、それぞれ接続パッド6eに電気的に接続されている。なお、本実施形態に係る半導体装置1aは、バンプ電極およびその周辺部分以外の構成は第1の実施形態に係る半導体装置1と同様である。
(第3の実施形態)
図8は、本発明の第3の実施形態に係る半導体装置の側断面図である。本実施形態の半導体装置1bでは、第2の配線基板11bの配線に、TCP(Tape Carrier Package)実装などに用いられるフィルムリードを用いている。なお、本実施形態に係る半導体装置1bは、第2の配線基板11bの配線以外の構成は第1の実施形態に係る半導体装置1と同様である。
(第4の実施形態)
図9は、本発明の第4の実施形態に係る半導体装置の側断面図である。本実施形態に係る半導体装置1cは、第1の半導体チップ3cおよび第2の半導体チップ10cを有している。また、半導体装置1cは上部に配線基板を備えていない。なお、本実施形態に係る半導体装置1cは、半導体チップ3c,10cの構成および上部に配線基板を備えていないこと以外の構成は第1の実施形態に係る半導体装置1と同様である。
(第5の実施形態)
図10は、本発明の第4の実施形態に係る半導体モジュールの部分側断面図である。本実施形態に係る半導体モジュールは、上段および下段の2段に構成されており、上段および下段にそれぞれ本発明の第1の実施形態に係る少なくとも1つの半導体装置1を有している。この半導体モジュールは、下段の半導体装置1の上面に、上段の半導体装置1の下面の空き領域が近接するように配置されている。
2,2a 電極パッド
3,3a,3c 第1の半導体チップ
4,4a,4b バンプ電極
5,5a 第1の配線基板
6a,6b,6c,6d,6e 接続パッド
7 ランド
8 アンダーフィル材
9,9a 外部端子
10,10a,10b,10c 第2の半導体チップ
11,11a,11b 第2の配線基板
12 ワイヤ
13,13c 封止部
14 半導体ウエハ
15 開口部
16a,16b 配線
17a,17b 接続開口部
18 メッキ膜
19 フィルムリード
Claims (8)
- 一方の面に複数の外部端子を備えた第1の配線基板と、該第1の配線基板の他方の面に一方の面が実装された第1の半導体チップと、該第1の半導体チップの他方の面に一方の面が実装された第2の半導体チップと、を有する半導体装置において、
前記第1の配線基板の前記他方の面には、前記第1の半導体チップの前記一方の面に電気的に接続された第1の接続部と、前記第1の半導体チップの端部に近接して配置された第2の接続部と、が設けられ、前記第1の接続部および前記第2の接続部は前記外部端子に電気的に接続されており、
前記第2の半導体チップの他方の面の端部に当接または近接して配置され、前記第2の半導体チップの前記他方の面に電気的に接続された第3の接続部と、前記第2の接続部と前記第3の接続部とを電気的に接続している導線と、をさらに有することを特徴とする半導体装置。 - 前記外部端子および前記第1の接続部が前記第1の配線基板の中央領域に配置されている、請求項1に記載の半導体装置。
- 前記第2の半導体チップの前記他方の面に第2の配線基板が実装されており、前記第2の配線基板に前記第3の接続部が配置されている、請求項1または2に記載の半導体装置。
- 前記第1の配線基板と前記第2の配線基板とは、素材および厚さが実質的に同一である、請求項3に記載の半導体装置。
- 前記第2の配線基板はフィルムリードにより配線されている、請求項3または4に記載の半導体装置。
- 前記第1の半導体チップはバンプ電極を有し、前記第1の接続部は接続開口部を有し、前記バンプ電極の少なくとも一部が前記接続開口部に入り込んだ状態で、前記第1の接続部と前記バンプ電極とが電気的に接続されている、請求項1から5のいずれか1項に記載の半導体装置。
- 前記接続開口部にはメッキ膜が形成されている、請求項6に記載の半導体装置。
- 請求項2に記載の半導体装置を複数有し、一の前記半導体装置の前記第1の配線基板の前記一方の面の前記中央領域以外の部分が、他の前記半導体装置の前記第2の半導体チップの前記他方の面側の外面に当接または近接して、少なくとも2段に配置された半導体モジュール。
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JP2022515802A (ja) * | 2018-12-29 | 2022-02-22 | 広東美的制冷設備有限公司 | 高集積パワーモジュール及び電気器具 |
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