JP2009111367A5 - - Google Patents

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Publication number
JP2009111367A5
JP2009111367A5 JP2008258309A JP2008258309A JP2009111367A5 JP 2009111367 A5 JP2009111367 A5 JP 2009111367A5 JP 2008258309 A JP2008258309 A JP 2008258309A JP 2008258309 A JP2008258309 A JP 2008258309A JP 2009111367 A5 JP2009111367 A5 JP 2009111367A5
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JP
Japan
Prior art keywords
silicon substrate
hole
thermal oxide
forming
oxide film
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Application number
JP2008258309A
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English (en)
Japanese (ja)
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JP2009111367A (ja
JP5536322B2 (ja
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Priority to JP2008258309A priority Critical patent/JP5536322B2/ja
Priority claimed from JP2008258309A external-priority patent/JP5536322B2/ja
Publication of JP2009111367A publication Critical patent/JP2009111367A/ja
Publication of JP2009111367A5 publication Critical patent/JP2009111367A5/ja
Application granted granted Critical
Publication of JP5536322B2 publication Critical patent/JP5536322B2/ja
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JP2008258309A 2007-10-09 2008-10-03 基板の製造方法 Active JP5536322B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008258309A JP5536322B2 (ja) 2007-10-09 2008-10-03 基板の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007263224 2007-10-09
JP2007263224 2007-10-09
JP2008258309A JP5536322B2 (ja) 2007-10-09 2008-10-03 基板の製造方法

Publications (3)

Publication Number Publication Date
JP2009111367A JP2009111367A (ja) 2009-05-21
JP2009111367A5 true JP2009111367A5 (https=) 2011-08-11
JP5536322B2 JP5536322B2 (ja) 2014-07-02

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Family Applications (1)

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JP2008258309A Active JP5536322B2 (ja) 2007-10-09 2008-10-03 基板の製造方法

Country Status (5)

Country Link
US (1) US7795140B2 (https=)
EP (1) EP2048923A3 (https=)
JP (1) JP5536322B2 (https=)
KR (1) KR20090036521A (https=)
TW (1) TW200919606A (https=)

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TW201241941A (en) * 2010-10-21 2012-10-16 Sumitomo Bakelite Co A method for manufacturing an electronic equipment, and the electronic equipment obtained by using the method, as well as a method for manufacturing electronics and electronic parts, and the electronics and the electronic parts obtained using the method
TWI527174B (zh) 2010-11-19 2016-03-21 日月光半導體製造股份有限公司 具有半導體元件之封裝結構
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TWI445155B (zh) 2011-01-06 2014-07-11 日月光半導體製造股份有限公司 堆疊式封裝結構及其製造方法
US8853819B2 (en) 2011-01-07 2014-10-07 Advanced Semiconductor Engineering, Inc. Semiconductor structure with passive element network and manufacturing method thereof
KR101767654B1 (ko) 2011-05-19 2017-08-14 삼성전자주식회사 에어 갭 절연 구조를 갖는 관통전극을 구비한 반도체 소자 및 그 제조방법
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US8975157B2 (en) 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
US8963316B2 (en) 2012-02-15 2015-02-24 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US8786060B2 (en) 2012-05-04 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US9153542B2 (en) 2012-08-01 2015-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor package having an antenna and manufacturing method thereof
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US9159699B2 (en) * 2012-11-13 2015-10-13 Delta Electronics, Inc. Interconnection structure having a via structure
US8952542B2 (en) 2012-11-14 2015-02-10 Advanced Semiconductor Engineering, Inc. Method for dicing a semiconductor wafer having through silicon vias and resultant structures
CN103839870B (zh) * 2012-11-20 2016-08-17 中微半导体设备(上海)有限公司 用于tsv刻蚀中改善硅通孔侧壁粗糙度的方法
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