JP2009105252A - 微細パターンの製造方法および光学素子 - Google Patents

微細パターンの製造方法および光学素子 Download PDF

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Publication number
JP2009105252A
JP2009105252A JP2007276148A JP2007276148A JP2009105252A JP 2009105252 A JP2009105252 A JP 2009105252A JP 2007276148 A JP2007276148 A JP 2007276148A JP 2007276148 A JP2007276148 A JP 2007276148A JP 2009105252 A JP2009105252 A JP 2009105252A
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JP
Japan
Prior art keywords
layer
etching
hard mask
fine pattern
patterned resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007276148A
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English (en)
Japanese (ja)
Inventor
Yoshihide Nagata
佳秀 永田
Atsushi Sato
敦 佐藤
Isoroku Watanabe
一十六 渡邊
Takashi Takagi
孝 高木
Ji Woo Kim
志優 金
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Cheil Industries Inc
Original Assignee
Cheil Industries Inc
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Filing date
Publication date
Application filed by Cheil Industries Inc filed Critical Cheil Industries Inc
Priority to JP2007276148A priority Critical patent/JP2009105252A/ja
Priority to KR1020080052014A priority patent/KR100989312B1/ko
Publication of JP2009105252A publication Critical patent/JP2009105252A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Micromachines (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2007276148A 2007-10-24 2007-10-24 微細パターンの製造方法および光学素子 Pending JP2009105252A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007276148A JP2009105252A (ja) 2007-10-24 2007-10-24 微細パターンの製造方法および光学素子
KR1020080052014A KR100989312B1 (ko) 2007-10-24 2008-06-03 미세 패턴의 제조 방법 및 광학 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007276148A JP2009105252A (ja) 2007-10-24 2007-10-24 微細パターンの製造方法および光学素子

Publications (1)

Publication Number Publication Date
JP2009105252A true JP2009105252A (ja) 2009-05-14

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ID=40706647

Family Applications (1)

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JP2007276148A Pending JP2009105252A (ja) 2007-10-24 2007-10-24 微細パターンの製造方法および光学素子

Country Status (2)

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JP (1) JP2009105252A (ko)
KR (1) KR100989312B1 (ko)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040476A1 (ja) * 2009-09-30 2011-04-07 Hoya株式会社 インプリント用モールドの製造方法
JP2011102939A (ja) * 2009-11-12 2011-05-26 Storenet Corp 監視装置、監視装置用フィルタ部材の製造方法及び監視装置用アダプタ
JP2011159850A (ja) * 2010-02-02 2011-08-18 Toshiba Corp テンプレート、テンプレートの製造方法およびパターン形成方法
JPWO2011021573A1 (ja) * 2009-08-17 2013-01-24 Jsr株式会社 パターン形成方法
JP2013084924A (ja) * 2011-09-28 2013-05-09 Dainippon Printing Co Ltd パターンの形成方法
WO2014181798A1 (ja) * 2013-05-08 2014-11-13 旭化成イーマテリアルズ株式会社 エッチング被加工材
JP2016096217A (ja) * 2014-11-13 2016-05-26 旭化成イーマテリアルズ株式会社 ドライレジスト層転写フィルムロール
CN106019431A (zh) * 2016-07-08 2016-10-12 陕西师范大学 一种空间任意弯曲光束产生器的结构与制备方法
JP2017504201A (ja) * 2013-12-30 2017-02-02 キャノン・ナノテクノロジーズ・インコーポレーテッド サブ２０ｎｍの図案の均一なインプリントパターン転写方法
US20170075051A1 (en) 2015-09-16 2017-03-16 Korea Institute Of Machinery & Materials Method of manufacturing wire grid polarizer
JP2018036324A (ja) * 2016-08-29 2018-03-08 凸版印刷株式会社 光学素子およびその製造方法
CN110651357A (zh) * 2017-08-01 2020-01-03 吉佳蓝科技股份有限公司 利用被压印的微图案的等离子蚀刻方法
WO2020219155A1 (en) * 2019-04-26 2020-10-29 Applied Materials, Inc. Transferring nanostructures from wafers to transparent substrates
US10969677B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask
US10969686B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US11029596B2 (en) 2016-01-27 2021-06-08 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
WO2021167709A1 (en) * 2020-02-21 2021-08-26 Applied Materials, Inc. A maskless lithography method to fabricate topographic substrate
TWI784236B (zh) * 2019-09-20 2022-11-21 日商鎧俠股份有限公司 圖案形成方法及半導體裝置的製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101437924B1 (ko) 2010-01-22 2014-09-11 한국생명공학연구원 경사 증착을 이용한 리소그래피 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004280050A (ja) * 2002-10-15 2004-10-07 Eastman Kodak Co 埋込み式ワイヤグリッド偏光子
WO2006033872A2 (en) * 2004-09-21 2006-03-30 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
JP2006203193A (ja) * 2004-12-30 2006-08-03 Asml Netherlands Bv インプリント・リソグラフィ
JP2007069604A (ja) * 2005-08-10 2007-03-22 Toray Ind Inc パターン形成方法、パターン形成用シート、およびそれを用いて形成される光学機能性シート
JP2007128087A (ja) * 2005-10-31 2007-05-24 Toshiba Corp 短波長用偏光素子及び偏光素子製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100590727B1 (ko) * 2004-02-24 2006-06-19 한국기계연구원 임프린트된 나노구조물을 이용한 미세접촉 인쇄기법과이의 나노 구조물
KR20050099888A (ko) * 2004-04-12 2005-10-17 엘지전자 주식회사 나노 와이어 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004280050A (ja) * 2002-10-15 2004-10-07 Eastman Kodak Co 埋込み式ワイヤグリッド偏光子
WO2006033872A2 (en) * 2004-09-21 2006-03-30 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
JP2006203193A (ja) * 2004-12-30 2006-08-03 Asml Netherlands Bv インプリント・リソグラフィ
JP2007069604A (ja) * 2005-08-10 2007-03-22 Toray Ind Inc パターン形成方法、パターン形成用シート、およびそれを用いて形成される光学機能性シート
JP2007128087A (ja) * 2005-10-31 2007-05-24 Toshiba Corp 短波長用偏光素子及び偏光素子製造方法

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011021573A1 (ja) * 2009-08-17 2013-01-24 Jsr株式会社 パターン形成方法
JP2015065443A (ja) * 2009-08-17 2015-04-09 Jsr株式会社 パターン形成方法
KR101680407B1 (ko) 2009-08-17 2016-11-28 제이에스알 가부시끼가이샤 패턴 형성 방법
WO2011040476A1 (ja) * 2009-09-30 2011-04-07 Hoya株式会社 インプリント用モールドの製造方法
JP2011102939A (ja) * 2009-11-12 2011-05-26 Storenet Corp 監視装置、監視装置用フィルタ部材の製造方法及び監視装置用アダプタ
JP2011159850A (ja) * 2010-02-02 2011-08-18 Toshiba Corp テンプレート、テンプレートの製造方法およびパターン形成方法
JP2013084924A (ja) * 2011-09-28 2013-05-09 Dainippon Printing Co Ltd パターンの形成方法
WO2014181798A1 (ja) * 2013-05-08 2014-11-13 旭化成イーマテリアルズ株式会社 エッチング被加工材
JP2014239208A (ja) * 2013-05-08 2014-12-18 旭化成イーマテリアルズ株式会社 エッチング被加工材及びそれを用いたエッチング方法
JP2017504201A (ja) * 2013-12-30 2017-02-02 キャノン・ナノテクノロジーズ・インコーポレーテッド サブ２０ｎｍの図案の均一なインプリントパターン転写方法
JP2016096217A (ja) * 2014-11-13 2016-05-26 旭化成イーマテリアルズ株式会社 ドライレジスト層転写フィルムロール
US9638851B2 (en) 2015-09-16 2017-05-02 Korea Institute Of Machinery & Materials Method of manufacturing wire grid polarizer
US20170075051A1 (en) 2015-09-16 2017-03-16 Korea Institute Of Machinery & Materials Method of manufacturing wire grid polarizer
JP2017058653A (ja) * 2015-09-16 2017-03-23 コリア・インスティテュート・オブ・マシナリー・アンド・マテリアルズＫｏｒｅａ Ｉｎｓｔｉｔｕｔｅ Ｏｆ Ｍａｃｈｉｎｅｒｙ ＆ Ｍａｔｅｒｉａｌｓ ワイヤグリッド偏光子の製造方法
US11029596B2 (en) 2016-01-27 2021-06-08 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US10969677B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask
US10969686B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
CN106019431A (zh) * 2016-07-08 2016-10-12 陕西师范大学 一种空间任意弯曲光束产生器的结构与制备方法
JP2018036324A (ja) * 2016-08-29 2018-03-08 凸版印刷株式会社 光学素子およびその製造方法
CN110651357A (zh) * 2017-08-01 2020-01-03 吉佳蓝科技股份有限公司 利用被压印的微图案的等离子蚀刻方法
US11001535B2 (en) 2019-04-26 2021-05-11 Applied Materials, Inc. Transferring nanostructures from wafers to transparent substrates
WO2020219155A1 (en) * 2019-04-26 2020-10-29 Applied Materials, Inc. Transferring nanostructures from wafers to transparent substrates
KR20210147103A (ko) * 2019-04-26 2021-12-06 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼들로부터 투명 기판들로의 나노구조들의 전달
JP2022530865A (ja) * 2019-04-26 2022-07-04 アプライド マテリアルズ インコーポレイテッド ウエハから透明基板へのナノ構造の転写
JP7305793B2 (ja) 2019-04-26 2023-07-10 アプライド マテリアルズ インコーポレイテッド ウエハから透明基板へのナノ構造の転写
KR102660013B1 (ko) 2019-04-26 2024-04-22 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼들로부터 투명 기판들로의 나노구조들의 전달
TWI784236B (zh) * 2019-09-20 2022-11-21 日商鎧俠股份有限公司 圖案形成方法及半導體裝置的製造方法
WO2021167709A1 (en) * 2020-02-21 2021-08-26 Applied Materials, Inc. A maskless lithography method to fabricate topographic substrate
US11669012B2 (en) 2020-02-21 2023-06-06 Applied Materials, Inc. Maskless lithography method to fabricate topographic substrate

Also Published As

Publication number Publication date
KR100989312B1 (ko) 2010-10-25
KR20090042136A (ko) 2009-04-29

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