JP2022530865A - ウエハから透明基板へのナノ構造の転写 - Google Patents
ウエハから透明基板へのナノ構造の転写 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 135
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 95
- 230000003287 optical effect Effects 0.000 claims abstract description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims 2
- 229910005540 GaP Inorganic materials 0.000 claims 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 142
- 238000001020 plasma etching Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 229910000154 gallium phosphate Inorganic materials 0.000 description 4
- LWFNJDOYCSNXDO-UHFFFAOYSA-K gallium;phosphate Chemical compound [Ga+3].[O-]P([O-])([O-])=O LWFNJDOYCSNXDO-UHFFFAOYSA-K 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 238000009954 braiding Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- RHIAOOMCMLDTKE-UHFFFAOYSA-L butanedioate;cadmium(2+) Chemical compound [Cd+2].[O-]C(=O)CCC([O-])=O RHIAOOMCMLDTKE-UHFFFAOYSA-L 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- -1 phosphides Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- AGFGXVAAIXIOFZ-UHFFFAOYSA-L zinc;butanedioate Chemical compound [Zn+2].[O-]C(=O)CCC([O-])=O AGFGXVAAIXIOFZ-UHFFFAOYSA-L 0.000 description 1
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Abstract
Description
Claims (15)
- 光学デバイスを形成する方法であって、
基板の第1の表面上に酸化物層を堆積させること、
前記基板の前記第1の表面の一部分を露出させるために、前記酸化物層内に開口部を形成すること、
前記第1の表面の反対側の前記基板の第2の表面上に配置された透明層上に、構造層を堆積させること、
前記構造層内に複数のナノ構造を形成すること、
前記酸化物層内の前記開口部から前記透明層まで延在する前記基板の一部分をエッチングすること、及び
光学デバイスを形成するために、前記複数のナノ構造がその上に配置された前記透明層の一部分を、前記基板から取り外すことを含む、方法。 - 前記透明層は、前記構造層を堆積させる前に前記基板の前記第2の表面上に堆積され、前記複数のナノ構造は、ナノインプリントスタンプ又はリソグラフィ工程を使用して形成される、請求項1に記載の方法。
- 前記酸化物層を堆積させる前に、前記透明層が前記第2の表面上に配置された前記基板をベースとして提供することを更に含む、請求項1に記載の方法。
- 前記構造層が、約1.8より大きい屈折率及び約0.001未満の吸収係数を有する材料を含む、請求項1に記載の方法。
- 前記構造層は、二酸化チタン、リン化ガリウム、窒化ガリウム、酸化亜鉛、二酸化スズ、アルミニウムドープ酸化亜鉛、結晶シリコン、及び窒化ケイ素から成る群から選択された材料を含む、請求項1に記載の方法。
- 前記基板がシリコンを含み、前記透明層が酸化物材料を含む、請求項1に記載の方法。
- 前記酸化物層内の前記開口部から前記透明層まで延在する前記基板の前記一部分が、二フッ化キセノンを含むエッチャントを使用してエッチングされる、請求項1に記載の方法。
- 前記基板がシリコンを含み、前記透明層が二酸化ケイ素を含み、前記酸化物層内の前記開口部から前記透明層まで延在する前記基板の前記一部分が、二酸化ケイ素と比較してシリコンをエッチングするための高い選択性を有するエッチャントを使用してエッチングされる、請求項1に記載の方法。
- 光学デバイスを形成する方法であって、
シリコンオンインシュレータ基板をベースとして提供することであって、前記シリコンオンインシュレータ基板が、シリコン含有基板と、前記シリコン含有基板の第1の表面上に配置された透明層と、前記透明層上に配置されたシリコン含有層とを含む、シリコンオンインシュレータ基板をベースとして提供すること、
前記第1の表面の反対側の前記シリコン含有基板の第2の表面上に、酸化物層を堆積させること、
前記シリコン含有基板の前記第2の表面の一部分を露出させるために、前記酸化物層内に開口部を形成すること、
前記シリコン含有層内に複数のナノ構造を形成すること、
前記酸化物層内の前記開口部から前記透明層まで延在する前記シリコン含有基板の一部分をエッチングすること、及び
光学デバイスを形成するために、前記複数のナノ構造がその上に配置された前記透明層の一部分を、前記シリコン含有基板から取り外すことを含む、方法。 - 前記透明層が酸化物材料を含むか、又は、前記酸化物層内の前記開口部から前記透明層まで延在する前記シリコン含有基板の前記一部分が、二フッ化キセノンを含むエッチャントを使用してエッチングされる、請求項9に記載の方法。
- 前記シリコン含有基板がシリコンを含み、前記透明層が二酸化ケイ素を含み、前記酸化物層内の前記開口部から前記透明層まで延在する前記シリコン含有基板の前記一部分が、二酸化ケイ素と比較してシリコンをエッチングするための高い選択性を有するエッチャントを使用してエッチングされる、請求項9に記載の方法。
- 前記複数のナノ構造は、ナノインプリントスタンプ又はリソグラフィ工程を使用して形成され、前記シリコン含有層は、結晶シリコン、窒化ケイ素、及びアモルファスシリコンから成る群から選択される、請求項9に記載の方法。
- 光学デバイスを形成する方法であって、
シリコンを含む基板をベースとして提供すること、
前記基板の第1の表面上に酸化物層を堆積させること、
前記基板の前記第1の表面の一部分を露出させるために、前記酸化物層内に開口部を形成すること、
前記第1の表面の反対側の前記基板の第2の表面上に、透明層を堆積させること、
前記透明層上に約1.8より大きい屈折率及び約0.001未満の吸収係数を有する材料を含む構造層を堆積させること、
前記構造層内に複数のナノ構造を形成すること、
前記酸化物層内の前記開口部から前記透明層まで延在する前記基板の一部分をエッチングすること、並びに
光学デバイスを形成するために、前記複数のナノ構造がその上に配置された前記透明層の一部分を、前記基板から取り外すことを含む、方法。 - 前記構造層は、二酸化チタン、リン化ガリウム、窒化ガリウム、酸化亜鉛、二酸化スズ、アルミニウムドープ酸化亜鉛、結晶シリコン、及び窒化ケイ素から成る群から選択された材料を含む、請求項13に記載の方法。
- 前記透明層が酸化物材料を含み、前記酸化物層内の前記開口部から前記透明層まで延在する前記基板の前記一部分が、二フッ化キセノンを含むエッチャントを使用してエッチングされる、請求項13に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN201941016730 | 2019-04-26 | ||
IN201941016730 | 2019-04-26 | ||
US16/452,136 US11001535B2 (en) | 2019-04-26 | 2019-06-25 | Transferring nanostructures from wafers to transparent substrates |
US16/452,136 | 2019-06-25 | ||
PCT/US2020/019500 WO2020219155A1 (en) | 2019-04-26 | 2020-02-24 | Transferring nanostructures from wafers to transparent substrates |
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JP2022530865A true JP2022530865A (ja) | 2022-07-04 |
JP7305793B2 JP7305793B2 (ja) | 2023-07-10 |
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- 2020-02-24 CN CN202080031521.7A patent/CN113728250B/zh active Active
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EP3959547A4 (en) | 2023-01-18 |
EP3959547A1 (en) | 2022-03-02 |
US20200339484A1 (en) | 2020-10-29 |
CN113728250A (zh) | 2021-11-30 |
WO2020219155A1 (en) | 2020-10-29 |
TW202106608A (zh) | 2021-02-16 |
KR102660013B1 (ko) | 2024-04-22 |
CN113728250B (zh) | 2023-06-06 |
JP7305793B2 (ja) | 2023-07-10 |
KR20210147103A (ko) | 2021-12-06 |
US11001535B2 (en) | 2021-05-11 |
TWI831931B (zh) | 2024-02-11 |
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