JP7305793B2 - ウエハから透明基板へのナノ構造の転写 - Google Patents
ウエハから透明基板へのナノ構造の転写 Download PDFInfo
- Publication number
- JP7305793B2 JP7305793B2 JP2021562328A JP2021562328A JP7305793B2 JP 7305793 B2 JP7305793 B2 JP 7305793B2 JP 2021562328 A JP2021562328 A JP 2021562328A JP 2021562328 A JP2021562328 A JP 2021562328A JP 7305793 B2 JP7305793 B2 JP 7305793B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- substrate
- transparent layer
- nanostructures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 128
- 239000002086 nanomaterial Substances 0.000 title claims description 87
- 238000000034 method Methods 0.000 claims description 105
- 230000003287 optical effect Effects 0.000 claims description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 56
- 239000010703 silicon Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 20
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 7
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims 2
- 229910005540 GaP Inorganic materials 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 140
- 238000001020 plasma etching Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 238000010345 tape casting Methods 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 229940071182 stannate Drugs 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- -1 phosphides Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/101—Nanooptics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structural Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
Claims (20)
- 光学デバイスを形成する方法であって、
基板の第1の表面上にエッチングマスク層を堆積させること、
前記基板の前記第1の表面の一部分を露出させるために、前記エッチングマスク層内に開口部を形成すること、
前記第1の表面の反対側の前記基板の第2の表面上に配置された透明層上に、構造層を堆積させること、
前記エッチングマスク層内の前記開口部の上の前記構造層内に複数のナノ構造を形成すること、
前記エッチングマスク層内の前記開口部から前記透明層まで延在する前記基板の一部分をエッチングすること、及び
光学デバイスを形成するために、前記複数のナノ構造がその上に配置された前記透明層の一部分を、前記基板から取り外すことであって、前記透明層の取り外される前記一部分が前記エッチングマスク層内の前記開口部と整列する、前記透明層の一部分を、前記基板から取り外すことを含む、方法。 - 前記透明層は、前記構造層を堆積させる前に前記基板の前記第2の表面上に堆積される、請求項1に記載の方法。
- 前記エッチングマスク層を堆積させる前に、前記透明層が前記第2の表面上に配置された前記基板をベースとして提供することを更に含む、請求項1に記載の方法。
- 前記構造層が、約1.8より大きい屈折率及び約0.001未満の吸収係数を有する材料を含む、請求項1に記載の方法。
- 前記構造層は、二酸化チタン、リン化ガリウム、窒化ガリウム、酸化亜鉛、二酸化スズ、アルミニウムドープ酸化亜鉛、結晶シリコン、及び窒化ケイ素から成る群から選択された材料を含む、請求項1に記載の方法。
- 前記基板がシリコンを含む、請求項1に記載の方法。
- 前記エッチングマスク層内の前記開口部から前記透明層まで延在する前記基板の前記一部分が、二フッ化キセノンを含むエッチャントを使用してエッチングされる、請求項1に記載の方法。
- 前記基板がシリコンを含み、前記透明層が二酸化ケイ素を含み、前記エッチングマスク層内の前記開口部から前記透明層まで延在する前記基板の前記一部分が、二酸化ケイ素と比較してシリコンをエッチングするための高い選択性を有するエッチャントを使用してエッチングされる、請求項1に記載の方法。
- 光学デバイスを形成する方法であって、
シリコンオンインシュレータ基板をベースとして提供することであって、前記シリコンオンインシュレータ基板が、シリコン含有基板と、前記シリコン含有基板の第1の表面上に配置された透明層と、前記透明層上に配置されたシリコン含有層とを含む、シリコンオンインシュレータ基板をベースとして提供すること、
前記第1の表面の反対側の前記シリコン含有基板の第2の表面上に、酸化物層を堆積させること、
前記シリコン含有基板の前記第2の表面の一部分を露出させるために、前記酸化物層内に開口部を形成すること、
前記酸化物層内の前記開口部の上の前記シリコン含有層内に複数のナノ構造を形成すること、
前記酸化物層内の前記開口部から前記透明層まで延在する前記シリコン含有基板の一部分をエッチングすること、及び
光学デバイスを形成するために、前記複数のナノ構造がその上に配置された前記透明層の一部分を、前記シリコン含有基板から取り外すことであって、前記透明層の取り外される前記一部分が前記酸化物層内の前記開口部と整列する、前記透明層の一部分を、前記シリコン含有基板から取り外すことを含む、方法。 - 前記透明層が酸化物材料を含む、請求項9に記載の方法。
- 前記シリコン含有基板がシリコンを含み、前記透明層が二酸化ケイ素を含み、前記酸化物層内の前記開口部から前記透明層まで延在する前記シリコン含有基板の前記一部分が、二酸化ケイ素と比較してシリコンをエッチングするための高い選択性を有するエッチャントを使用してエッチングされる、請求項9に記載の方法。
- 前記複数のナノ構造は、ナノインプリントスタンプ又はリソグラフィ工程を使用して形成される、請求項9に記載の方法。
- 光学デバイスを形成する方法であって、
シリコンを含む基板をベースとして提供すること、
前記基板の第1の表面上に酸化物層を堆積させること、
前記基板の前記第1の表面の一部分を露出させるために、前記酸化物層内に開口部を形成すること、
前記第1の表面の反対側の前記基板の第2の表面上に、透明層を堆積させること、
前記透明層上に、約1.8より大きい屈折率及び約0.001未満の吸収係数を有する材料を含む構造層を堆積させること、
前記酸化物層内の前記開口部の上の前記構造層内に複数のナノ構造を形成すること、
前記酸化物層内の前記開口部から前記透明層まで延在する前記基板の一部分をエッチングすること、並びに
光学デバイスを形成するために、前記複数のナノ構造がその上に配置された前記透明層の一部分を、前記基板から取り外すことであって、前記透明層の取り外される前記一部分が前記酸化物層内の前記開口部と整列する、前記透明層の一部分を、前記基板から取り外すことを含む、方法。 - 前記構造層は、二酸化チタン、リン化ガリウム、窒化ガリウム、酸化亜鉛、二酸化スズ、アルミニウムドープ酸化亜鉛、結晶シリコン、及び窒化ケイ素から成る群から選択された材料を含む、請求項13に記載の方法。
- 前記透明層が酸化物材料を含む、請求項13に記載の方法。
- 前記複数のナノ構造は、ナノインプリントスタンプ又はリソグラフィ工程を使用して形成される、請求項1に記載の方法。
- 前記透明層が酸化物材料を含む、請求項1に記載の方法。
- 前記酸化物層内の前記開口部から前記透明層まで延在する前記シリコン含有基板の前記一部分が、二フッ化キセノンを含むエッチャントを使用してエッチングされる、請求項9に記載の方法。
- 前記シリコン含有層は、結晶シリコン、窒化ケイ素、及びアモルファスシリコンから成る群から選択される、請求項9に記載の方法。
- 前記酸化物層内の前記開口部から前記透明層まで延在する前記基板の前記一部分が、二フッ化キセノンを含むエッチャントを使用してエッチングされる、請求項13に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN201941016730 | 2019-04-26 | ||
IN201941016730 | 2019-04-26 | ||
US16/452,136 | 2019-06-25 | ||
US16/452,136 US11001535B2 (en) | 2019-04-26 | 2019-06-25 | Transferring nanostructures from wafers to transparent substrates |
PCT/US2020/019500 WO2020219155A1 (en) | 2019-04-26 | 2020-02-24 | Transferring nanostructures from wafers to transparent substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022530865A JP2022530865A (ja) | 2022-07-04 |
JP7305793B2 true JP7305793B2 (ja) | 2023-07-10 |
Family
ID=72921464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021562328A Active JP7305793B2 (ja) | 2019-04-26 | 2020-02-24 | ウエハから透明基板へのナノ構造の転写 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11001535B2 (ja) |
EP (1) | EP3959547A4 (ja) |
JP (1) | JP7305793B2 (ja) |
KR (1) | KR102660013B1 (ja) |
CN (1) | CN113728250B (ja) |
TW (1) | TWI831931B (ja) |
WO (1) | WO2020219155A1 (ja) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158114A (ja) | 2001-07-26 | 2003-05-30 | Hewlett Packard Co <Hp> | シリコンエッチングのためのモニタ処理および検査構造 |
US20070160321A1 (en) | 2005-12-01 | 2007-07-12 | The Regents Of The University Of California | Monolithic mems-based wavelength-selective switches and cross connects |
JP2009105252A (ja) | 2007-10-24 | 2009-05-14 | Cheil Industries Inc | 微細パターンの製造方法および光学素子 |
US20090298259A1 (en) | 2008-05-28 | 2009-12-03 | Ching-Fuh Ling | Method for transferring one-dimensional micro/nanostructure |
JP2010522899A (ja) | 2007-03-26 | 2010-07-08 | トレックス エンタープライズ コーポレーション | 光スイッチ・モジュール |
US20110011436A1 (en) | 2009-07-20 | 2011-01-20 | Ezekiel Kruglick | Solar Array of Transparent Nanoantennas |
KR101878600B1 (ko) | 2017-04-10 | 2018-07-13 | 광주과학기술원 | 광학 바이오센서를 위한 주기적 금속 나노 패턴의 제조 방법 |
CN108646329A (zh) | 2018-03-29 | 2018-10-12 | 安徽工程大学 | X射线自支撑闪耀透射光栅的制备方法 |
JP2019035947A (ja) | 2017-08-16 | 2019-03-07 | ルーメンタム オペレーションズ エルエルシーLumentum Operations LLC | 回折光学素子用多層薄膜積層体 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8049292B2 (en) * | 2008-03-27 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR101042333B1 (ko) | 2008-12-01 | 2011-06-17 | 포항공과대학교 산학협력단 | 광원용 구조물의 제조방법과 이를 이용한 광원의 제조방법 |
CN101944477B (zh) * | 2009-07-03 | 2012-06-20 | 清华大学 | 柔性半导体器件的制造方法 |
CN103928295B (zh) * | 2013-01-16 | 2016-12-28 | 中国科学院上海微系统与信息技术研究所 | 一种将石墨烯转移到柔性衬底的方法 |
CN103086320B (zh) * | 2013-01-21 | 2015-08-05 | 西北工业大学 | 一种柔性壁面热线微传感器的新型制作方法 |
US11103167B2 (en) | 2017-02-10 | 2021-08-31 | Yen-Chun Yeh | Systems and methods for self-emission glucose monitoring using a guided-mode resonance filter array |
CN107278040B (zh) * | 2017-07-07 | 2019-05-07 | 山东科技大学 | 一种在可延展柔性基底上制造电路的方法 |
CN107390311A (zh) | 2017-07-11 | 2017-11-24 | 中国计量大学 | 一种多重周期的光子晶体纳米裂缝表面等离子体共振光栅 |
CN111279023A (zh) | 2017-08-30 | 2020-06-12 | 洛桑联邦理工学院 | 单晶金刚石衍射光学元件及其制造方法 |
CN108553089B (zh) * | 2018-05-14 | 2021-05-11 | 武汉华威科智能技术有限公司 | 一种基于牺牲层工艺的表皮传感器制备方法及制备的产品 |
-
2019
- 2019-06-25 US US16/452,136 patent/US11001535B2/en active Active
-
2020
- 2020-02-24 CN CN202080031521.7A patent/CN113728250B/zh active Active
- 2020-02-24 KR KR1020217038422A patent/KR102660013B1/ko active IP Right Grant
- 2020-02-24 JP JP2021562328A patent/JP7305793B2/ja active Active
- 2020-02-24 EP EP20796454.5A patent/EP3959547A4/en active Pending
- 2020-02-24 WO PCT/US2020/019500 patent/WO2020219155A1/en unknown
- 2020-02-26 TW TW109106190A patent/TWI831931B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158114A (ja) | 2001-07-26 | 2003-05-30 | Hewlett Packard Co <Hp> | シリコンエッチングのためのモニタ処理および検査構造 |
US20070160321A1 (en) | 2005-12-01 | 2007-07-12 | The Regents Of The University Of California | Monolithic mems-based wavelength-selective switches and cross connects |
JP2010522899A (ja) | 2007-03-26 | 2010-07-08 | トレックス エンタープライズ コーポレーション | 光スイッチ・モジュール |
JP2009105252A (ja) | 2007-10-24 | 2009-05-14 | Cheil Industries Inc | 微細パターンの製造方法および光学素子 |
US20090298259A1 (en) | 2008-05-28 | 2009-12-03 | Ching-Fuh Ling | Method for transferring one-dimensional micro/nanostructure |
US20110011436A1 (en) | 2009-07-20 | 2011-01-20 | Ezekiel Kruglick | Solar Array of Transparent Nanoantennas |
KR101878600B1 (ko) | 2017-04-10 | 2018-07-13 | 광주과학기술원 | 광학 바이오센서를 위한 주기적 금속 나노 패턴의 제조 방법 |
JP2019035947A (ja) | 2017-08-16 | 2019-03-07 | ルーメンタム オペレーションズ エルエルシーLumentum Operations LLC | 回折光学素子用多層薄膜積層体 |
CN108646329A (zh) | 2018-03-29 | 2018-10-12 | 安徽工程大学 | X射线自支撑闪耀透射光栅的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20210147103A (ko) | 2021-12-06 |
EP3959547A1 (en) | 2022-03-02 |
KR102660013B1 (ko) | 2024-04-22 |
CN113728250B (zh) | 2023-06-06 |
CN113728250A (zh) | 2021-11-30 |
JP2022530865A (ja) | 2022-07-04 |
TW202106608A (zh) | 2021-02-16 |
WO2020219155A1 (en) | 2020-10-29 |
EP3959547A4 (en) | 2023-01-18 |
US11001535B2 (en) | 2021-05-11 |
TWI831931B (zh) | 2024-02-11 |
US20200339484A1 (en) | 2020-10-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9034684B2 (en) | Texturing surface of light-absorbing substrate | |
JP7431250B2 (ja) | マルチ深度光学デバイスのパターニング | |
US11443955B2 (en) | Semiconductor device and fabrication method thereof | |
JP6148603B2 (ja) | 反射防止基板構造およびその製造方法 | |
US6245682B1 (en) | Removal of SiON ARC film after poly photo and etch | |
JP7305793B2 (ja) | ウエハから透明基板へのナノ構造の転写 | |
US20200386911A1 (en) | Apertures for flat optical devices | |
US20120293474A1 (en) | Systems and methods for facilitating lift-off processes | |
KR20160117818A (ko) | 반도체 소자의 제조 방법 | |
US10663859B2 (en) | Methods of forming photonic device structures and electronic devices | |
US10475940B2 (en) | Packaging glass with hierarchically nanostructured surface | |
US20200386926A1 (en) | Photoresist loading solutions for flat optics fabrication | |
JP2023533516A (ja) | ナノ構造光学装置の空隙のカプセル化 | |
TW202239698A (zh) | 光學元件之奈米壓印與蝕刻製造 | |
KR19980075148A (ko) | 오산화 이탄탈륨막을 반사방지막으로 사용한 반도체 소자 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211228 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211228 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230328 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230530 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230628 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7305793 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |