JP2009076808A5 - - Google Patents

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Publication number
JP2009076808A5
JP2009076808A5 JP2007246576A JP2007246576A JP2009076808A5 JP 2009076808 A5 JP2009076808 A5 JP 2009076808A5 JP 2007246576 A JP2007246576 A JP 2007246576A JP 2007246576 A JP2007246576 A JP 2007246576A JP 2009076808 A5 JP2009076808 A5 JP 2009076808A5
Authority
JP
Japan
Prior art keywords
semiconductor device
electrode pad
probe region
wiring
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007246576A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009076808A (ja
JP5027605B2 (ja
Filing date
Publication date
Priority claimed from JP2007246576A external-priority patent/JP5027605B2/ja
Priority to JP2007246576A priority Critical patent/JP5027605B2/ja
Application filed filed Critical
Priority to US12/208,595 priority patent/US7999256B2/en
Priority to CN2008101663001A priority patent/CN101399254B/zh
Publication of JP2009076808A publication Critical patent/JP2009076808A/ja
Publication of JP2009076808A5 publication Critical patent/JP2009076808A5/ja
Priority to US13/179,331 priority patent/US8338829B2/en
Publication of JP5027605B2 publication Critical patent/JP5027605B2/ja
Application granted granted Critical
Priority to US13/684,369 priority patent/US8669555B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007246576A 2007-09-25 2007-09-25 半導体装置 Active JP5027605B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007246576A JP5027605B2 (ja) 2007-09-25 2007-09-25 半導体装置
US12/208,595 US7999256B2 (en) 2007-09-25 2008-09-11 Semiconductor device
CN2008101663001A CN101399254B (zh) 2007-09-25 2008-09-25 半导体装置
US13/179,331 US8338829B2 (en) 2007-09-25 2011-07-08 Semiconductor device
US13/684,369 US8669555B2 (en) 2007-09-25 2012-11-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007246576A JP5027605B2 (ja) 2007-09-25 2007-09-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2009076808A JP2009076808A (ja) 2009-04-09
JP2009076808A5 true JP2009076808A5 (enExample) 2010-03-18
JP5027605B2 JP5027605B2 (ja) 2012-09-19

Family

ID=40470671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007246576A Active JP5027605B2 (ja) 2007-09-25 2007-09-25 半導体装置

Country Status (3)

Country Link
US (3) US7999256B2 (enExample)
JP (1) JP5027605B2 (enExample)
CN (1) CN101399254B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003578A (ja) * 2009-06-16 2011-01-06 Renesas Electronics Corp 半導体装置
WO2020098623A1 (en) * 2018-11-12 2020-05-22 Changxin Memory Technologies, Inc. Semiconductor device, pad structure and fabrication method thereof
US11837623B2 (en) * 2020-10-12 2023-12-05 Raytheon Company Integrated circuit having vertical routing to bond pads

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3504421B2 (ja) * 1996-03-12 2004-03-08 株式会社ルネサステクノロジ 半導体装置
JP2781787B2 (ja) 1996-08-29 1998-07-30 日本電気アイシーマイコンシステム株式会社 半導体チップのボンディングパッド配置構成及びその最適化方法
KR100295637B1 (ko) * 1997-12-29 2001-10-24 김영환 반도체웨이퍼의구조및반도체칩의제조방법
JP2002016069A (ja) * 2000-06-29 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2002110751A (ja) * 2000-10-03 2002-04-12 Hitachi Ltd 半導体集積回路装置の検査装置および製造方法
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US7629689B2 (en) * 2004-01-22 2009-12-08 Kawasaki Microelectronics, Inc. Semiconductor integrated circuit having connection pads over active elements
JP4242336B2 (ja) 2004-02-05 2009-03-25 パナソニック株式会社 半導体装置
JP2005243907A (ja) * 2004-02-26 2005-09-08 Renesas Technology Corp 半導体装置
JP4803966B2 (ja) 2004-03-31 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
US7115985B2 (en) * 2004-09-30 2006-10-03 Agere Systems, Inc. Reinforced bond pad for a semiconductor device
US7241636B2 (en) * 2005-01-11 2007-07-10 Freescale Semiconductor, Inc. Method and apparatus for providing structural support for interconnect pad while allowing signal conductance
JP2006202866A (ja) 2005-01-19 2006-08-03 Nec Electronics Corp 半導体装置
JP2006210631A (ja) 2005-01-28 2006-08-10 Nec Electronics Corp 半導体装置
JP4585327B2 (ja) * 2005-02-08 2010-11-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5148825B2 (ja) * 2005-10-14 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP4951276B2 (ja) * 2006-05-29 2012-06-13 ルネサスエレクトロニクス株式会社 半導体チップおよび半導体装置
US7622364B2 (en) * 2006-08-18 2009-11-24 International Business Machines Corporation Bond pad for wafer and package for CMOS imager
US7397127B2 (en) * 2006-10-06 2008-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding and probing pad structures
US20080303177A1 (en) * 2007-06-06 2008-12-11 United Microelectronics Corp. Bonding pad structure

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