JP2009060011A - 基板載置台、基板処理装置、及び温度制御方法 - Google Patents

基板載置台、基板処理装置、及び温度制御方法 Download PDF

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Publication number
JP2009060011A
JP2009060011A JP2007227708A JP2007227708A JP2009060011A JP 2009060011 A JP2009060011 A JP 2009060011A JP 2007227708 A JP2007227708 A JP 2007227708A JP 2007227708 A JP2007227708 A JP 2007227708A JP 2009060011 A JP2009060011 A JP 2009060011A
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Japan
Prior art keywords
substrate
heat transfer
transfer gas
mounting table
substrate mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007227708A
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English (en)
Japanese (ja)
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JP2009060011A5 (https=
Inventor
Yasuharu Sasaki
康晴 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007227708A priority Critical patent/JP2009060011A/ja
Priority to CN200810146703A priority patent/CN100585828C/zh
Priority to KR1020080084461A priority patent/KR101037461B1/ko
Priority to TW097133598A priority patent/TWI502680B/zh
Priority to US12/203,402 priority patent/US20090233443A1/en
Publication of JP2009060011A publication Critical patent/JP2009060011A/ja
Publication of JP2009060011A5 publication Critical patent/JP2009060011A5/ja
Priority to US14/083,179 priority patent/US20140076515A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2007227708A 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法 Pending JP2009060011A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007227708A JP2009060011A (ja) 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法
CN200810146703A CN100585828C (zh) 2007-09-03 2008-08-26 基板载置台、基板处理装置以及温度控制方法
KR1020080084461A KR101037461B1 (ko) 2007-09-03 2008-08-28 기판탑재대, 기판 처리 장치, 및 온도 제어 방법
TW097133598A TWI502680B (zh) 2007-09-03 2008-09-02 A substrate stage, a substrate processing device, and a temperature control method
US12/203,402 US20090233443A1 (en) 2007-09-03 2008-09-03 Substrate mounting table, substrate processing apparatus and temperature control method
US14/083,179 US20140076515A1 (en) 2007-09-03 2013-11-18 Substrate mounting table, substrate processing apparatus and temperature control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007227708A JP2009060011A (ja) 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012039440A Division JP2012129547A (ja) 2012-02-25 2012-02-25 基板載置台、基板処理装置、および温度制御方法

Publications (2)

Publication Number Publication Date
JP2009060011A true JP2009060011A (ja) 2009-03-19
JP2009060011A5 JP2009060011A5 (https=) 2010-10-14

Family

ID=40463061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007227708A Pending JP2009060011A (ja) 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法

Country Status (5)

Country Link
US (2) US20090233443A1 (https=)
JP (1) JP2009060011A (https=)
KR (1) KR101037461B1 (https=)
CN (1) CN100585828C (https=)
TW (1) TWI502680B (https=)

Cited By (1)

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JP2015165528A (ja) * 2014-02-28 2015-09-17 株式会社日本セラテック 真空吸着部材

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US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
JP5869899B2 (ja) 2011-04-01 2016-02-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー
NL2009189A (en) 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
CN105683839B (zh) 2013-09-27 2017-08-08 Asml荷兰有限公司 用于光刻设备的支撑台、光刻设备以及器件制造方法
KR102113624B1 (ko) * 2013-12-27 2020-05-21 엘지디스플레이 주식회사 표시패널 제조장치
NL2015579A (en) 2014-10-23 2016-08-30 Asml Netherlands Bv Support table for a lithographic apparatus, method of loading a substrate, lithographic apparatus and device manufacturing method.
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2016136554A (ja) * 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104835761A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种边缘出气的可控温加热盘
CN104835765A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种多边形分布的凸台表面结构的可控温加热盘
KR102348108B1 (ko) * 2015-10-05 2022-01-10 주식회사 미코세라믹스 온도 편차 특성이 개선된 기판 가열 장치
WO2017170738A1 (ja) * 2016-03-30 2017-10-05 京セラ株式会社 吸着部材
WO2017221631A1 (ja) * 2016-06-23 2017-12-28 株式会社アルバック 保持装置
JP6918642B2 (ja) * 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
CN107910250A (zh) * 2017-11-16 2018-04-13 德淮半导体有限公司 晶片处理设备及方法
KR102516339B1 (ko) * 2018-04-06 2023-03-31 삼성전자주식회사 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법
JP7175114B2 (ja) * 2018-07-19 2022-11-18 東京エレクトロン株式会社 載置台及び電極部材
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
JP7407529B2 (ja) 2019-07-10 2024-01-04 東京エレクトロン株式会社 基板載置台、基板処理装置及び温度制御方法
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
CN112530846B (zh) * 2020-12-01 2024-06-21 北京北方华创微电子装备有限公司 承载盘及控温装置

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JPH05109847A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 発熱体の冷却装置
JPH07201956A (ja) * 1993-12-28 1995-08-04 Nippon Steel Corp ウエハ冷却装置
JP2000317761A (ja) * 1999-03-01 2000-11-21 Toto Ltd 静電チャックおよび吸着方法
JP2001274228A (ja) * 2000-01-20 2001-10-05 Ngk Insulators Ltd 静電チャック
JP2001341043A (ja) * 2000-06-02 2001-12-11 Sumitomo Osaka Cement Co Ltd 吸着固定装置
JP2004119987A (ja) * 2003-10-22 2004-04-15 Hitachi Ltd 半導体製造装置
JP2006156938A (ja) * 2004-10-29 2006-06-15 Tokyo Electron Ltd 基板載置台、基板処理装置、および基板の温度制御方法
JP2007207840A (ja) * 2006-01-31 2007-08-16 Sumitomo Osaka Cement Co Ltd サセプタ装置

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JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
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US5937541A (en) * 1997-09-15 1999-08-17 Siemens Aktiengesellschaft Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
JP4697833B2 (ja) * 2000-06-14 2011-06-08 キヤノンアネルバ株式会社 静電吸着機構及び表面処理装置
KR20020094353A (ko) * 2001-06-11 2002-12-18 삼성전자 주식회사 웨이퍼 쿨링 스테이지
KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
JP2005079539A (ja) * 2003-09-03 2005-03-24 Hitachi Ltd プラズマ処理装置
JP2005085803A (ja) * 2003-09-04 2005-03-31 Shinwa Controls Co Ltd サセプタ
KR20050069684A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 반도체 웨이퍼용 정전척의 온도조절장치 및 온도조절방법
JP5004436B2 (ja) * 2005-05-23 2012-08-22 東京エレクトロン株式会社 静電吸着電極および処理装置
US7646581B2 (en) * 2006-01-31 2010-01-12 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck

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Publication number Priority date Publication date Assignee Title
JPH05109847A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 発熱体の冷却装置
JPH07201956A (ja) * 1993-12-28 1995-08-04 Nippon Steel Corp ウエハ冷却装置
JP2000317761A (ja) * 1999-03-01 2000-11-21 Toto Ltd 静電チャックおよび吸着方法
JP2001274228A (ja) * 2000-01-20 2001-10-05 Ngk Insulators Ltd 静電チャック
JP2001341043A (ja) * 2000-06-02 2001-12-11 Sumitomo Osaka Cement Co Ltd 吸着固定装置
JP2004119987A (ja) * 2003-10-22 2004-04-15 Hitachi Ltd 半導体製造装置
JP2006156938A (ja) * 2004-10-29 2006-06-15 Tokyo Electron Ltd 基板載置台、基板処理装置、および基板の温度制御方法
JP2007207840A (ja) * 2006-01-31 2007-08-16 Sumitomo Osaka Cement Co Ltd サセプタ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015165528A (ja) * 2014-02-28 2015-09-17 株式会社日本セラテック 真空吸着部材

Also Published As

Publication number Publication date
US20140076515A1 (en) 2014-03-20
TWI502680B (zh) 2015-10-01
KR101037461B1 (ko) 2011-05-26
CN101383314A (zh) 2009-03-11
US20090233443A1 (en) 2009-09-17
TW200931587A (en) 2009-07-16
CN100585828C (zh) 2010-01-27
KR20090024075A (ko) 2009-03-06

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