CN100585828C - 基板载置台、基板处理装置以及温度控制方法 - Google Patents

基板载置台、基板处理装置以及温度控制方法 Download PDF

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Publication number
CN100585828C
CN100585828C CN200810146703A CN200810146703A CN100585828C CN 100585828 C CN100585828 C CN 100585828C CN 200810146703 A CN200810146703 A CN 200810146703A CN 200810146703 A CN200810146703 A CN 200810146703A CN 100585828 C CN100585828 C CN 100585828C
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China
Prior art keywords
substrate
heat transfer
transfer gas
mounting table
gas
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Expired - Fee Related
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CN200810146703A
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English (en)
Chinese (zh)
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CN101383314A (zh
Inventor
佐佐木康晴
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN200810146703A 2007-09-03 2008-08-26 基板载置台、基板处理装置以及温度控制方法 Expired - Fee Related CN100585828C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007227708A JP2009060011A (ja) 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法
JP2007227708 2007-09-03

Publications (2)

Publication Number Publication Date
CN101383314A CN101383314A (zh) 2009-03-11
CN100585828C true CN100585828C (zh) 2010-01-27

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CN200810146703A Expired - Fee Related CN100585828C (zh) 2007-09-03 2008-08-26 基板载置台、基板处理装置以及温度控制方法

Country Status (5)

Country Link
US (2) US20090233443A1 (https=)
JP (1) JP2009060011A (https=)
KR (1) KR101037461B1 (https=)
CN (1) CN100585828C (https=)
TW (1) TWI502680B (https=)

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KR102113624B1 (ko) * 2013-12-27 2020-05-21 엘지디스플레이 주식회사 표시패널 제조장치
JP6212412B2 (ja) * 2014-02-28 2017-10-11 日本特殊陶業株式会社 真空吸着部材
NL2015579A (en) 2014-10-23 2016-08-30 Asml Netherlands Bv Support table for a lithographic apparatus, method of loading a substrate, lithographic apparatus and device manufacturing method.
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2016136554A (ja) * 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104835761A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种边缘出气的可控温加热盘
CN104835765A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种多边形分布的凸台表面结构的可控温加热盘
KR102348108B1 (ko) * 2015-10-05 2022-01-10 주식회사 미코세라믹스 온도 편차 특성이 개선된 기판 가열 장치
WO2017170738A1 (ja) * 2016-03-30 2017-10-05 京セラ株式会社 吸着部材
WO2017221631A1 (ja) * 2016-06-23 2017-12-28 株式会社アルバック 保持装置
JP6918642B2 (ja) * 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
CN107910250A (zh) * 2017-11-16 2018-04-13 德淮半导体有限公司 晶片处理设备及方法
KR102516339B1 (ko) * 2018-04-06 2023-03-31 삼성전자주식회사 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법
JP7175114B2 (ja) * 2018-07-19 2022-11-18 東京エレクトロン株式会社 載置台及び電極部材
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
JP7407529B2 (ja) 2019-07-10 2024-01-04 東京エレクトロン株式会社 基板載置台、基板処理装置及び温度制御方法
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
CN112530846B (zh) * 2020-12-01 2024-06-21 北京北方华创微电子装备有限公司 承载盘及控温装置

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Also Published As

Publication number Publication date
US20140076515A1 (en) 2014-03-20
TWI502680B (zh) 2015-10-01
KR101037461B1 (ko) 2011-05-26
CN101383314A (zh) 2009-03-11
US20090233443A1 (en) 2009-09-17
TW200931587A (en) 2009-07-16
KR20090024075A (ko) 2009-03-06
JP2009060011A (ja) 2009-03-19

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