TWI502680B - A substrate stage, a substrate processing device, and a temperature control method - Google Patents

A substrate stage, a substrate processing device, and a temperature control method Download PDF

Info

Publication number
TWI502680B
TWI502680B TW097133598A TW97133598A TWI502680B TW I502680 B TWI502680 B TW I502680B TW 097133598 A TW097133598 A TW 097133598A TW 97133598 A TW97133598 A TW 97133598A TW I502680 B TWI502680 B TW I502680B
Authority
TW
Taiwan
Prior art keywords
substrate
heat transfer
transfer gas
mounting table
sec
Prior art date
Application number
TW097133598A
Other languages
English (en)
Chinese (zh)
Other versions
TW200931587A (en
Inventor
佐佐木康晴
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200931587A publication Critical patent/TW200931587A/zh
Application granted granted Critical
Publication of TWI502680B publication Critical patent/TWI502680B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW097133598A 2007-09-03 2008-09-02 A substrate stage, a substrate processing device, and a temperature control method TWI502680B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007227708A JP2009060011A (ja) 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法

Publications (2)

Publication Number Publication Date
TW200931587A TW200931587A (en) 2009-07-16
TWI502680B true TWI502680B (zh) 2015-10-01

Family

ID=40463061

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097133598A TWI502680B (zh) 2007-09-03 2008-09-02 A substrate stage, a substrate processing device, and a temperature control method

Country Status (5)

Country Link
US (2) US20090233443A1 (https=)
JP (1) JP2009060011A (https=)
KR (1) KR101037461B1 (https=)
CN (1) CN100585828C (https=)
TW (1) TWI502680B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
JP5869899B2 (ja) 2011-04-01 2016-02-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー
NL2009189A (en) 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
CN105683839B (zh) 2013-09-27 2017-08-08 Asml荷兰有限公司 用于光刻设备的支撑台、光刻设备以及器件制造方法
KR102113624B1 (ko) * 2013-12-27 2020-05-21 엘지디스플레이 주식회사 표시패널 제조장치
JP6212412B2 (ja) * 2014-02-28 2017-10-11 日本特殊陶業株式会社 真空吸着部材
NL2015579A (en) 2014-10-23 2016-08-30 Asml Netherlands Bv Support table for a lithographic apparatus, method of loading a substrate, lithographic apparatus and device manufacturing method.
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2016136554A (ja) * 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104835761A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种边缘出气的可控温加热盘
CN104835765A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种多边形分布的凸台表面结构的可控温加热盘
KR102348108B1 (ko) * 2015-10-05 2022-01-10 주식회사 미코세라믹스 온도 편차 특성이 개선된 기판 가열 장치
WO2017170738A1 (ja) * 2016-03-30 2017-10-05 京セラ株式会社 吸着部材
WO2017221631A1 (ja) * 2016-06-23 2017-12-28 株式会社アルバック 保持装置
JP6918642B2 (ja) * 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
CN107910250A (zh) * 2017-11-16 2018-04-13 德淮半导体有限公司 晶片处理设备及方法
KR102516339B1 (ko) * 2018-04-06 2023-03-31 삼성전자주식회사 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법
JP7175114B2 (ja) * 2018-07-19 2022-11-18 東京エレクトロン株式会社 載置台及び電極部材
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
JP7407529B2 (ja) 2019-07-10 2024-01-04 東京エレクトロン株式会社 基板載置台、基板処理装置及び温度制御方法
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
CN112530846B (zh) * 2020-12-01 2024-06-21 北京北方华创微电子装备有限公司 承载盘及控温装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
JP2000317761A (ja) * 1999-03-01 2000-11-21 Toto Ltd 静電チャックおよび吸着方法
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US20010054389A1 (en) * 2000-06-14 2001-12-27 Yasumi Sago Electro-static chucking mechanism and surface processing apparatus
KR20020094353A (ko) * 2001-06-11 2002-12-18 삼성전자 주식회사 웨이퍼 쿨링 스테이지
KR20050069684A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 반도체 웨이퍼용 정전척의 온도조절장치 및 온도조절방법
KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
JP2006156938A (ja) * 2004-10-29 2006-06-15 Tokyo Electron Ltd 基板載置台、基板処理装置、および基板の温度制御方法
KR20060121702A (ko) * 2005-05-23 2006-11-29 동경 엘렉트론 주식회사 정전 흡착 전극 및 처리 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109847A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 発熱体の冷却装置
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JPH07201956A (ja) * 1993-12-28 1995-08-04 Nippon Steel Corp ウエハ冷却装置
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
US5937541A (en) * 1997-09-15 1999-08-17 Siemens Aktiengesellschaft Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
JP4317329B2 (ja) * 2000-01-20 2009-08-19 日本碍子株式会社 静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
JP2005079539A (ja) * 2003-09-03 2005-03-24 Hitachi Ltd プラズマ処理装置
JP2005085803A (ja) * 2003-09-04 2005-03-31 Shinwa Controls Co Ltd サセプタ
JP2004119987A (ja) * 2003-10-22 2004-04-15 Hitachi Ltd 半導体製造装置
JP5011736B2 (ja) * 2006-01-31 2012-08-29 住友大阪セメント株式会社 静電チャック装置
US7646581B2 (en) * 2006-01-31 2010-01-12 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
JP2000317761A (ja) * 1999-03-01 2000-11-21 Toto Ltd 静電チャックおよび吸着方法
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US20010054389A1 (en) * 2000-06-14 2001-12-27 Yasumi Sago Electro-static chucking mechanism and surface processing apparatus
KR20020094353A (ko) * 2001-06-11 2002-12-18 삼성전자 주식회사 웨이퍼 쿨링 스테이지
KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
KR20050069684A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 반도체 웨이퍼용 정전척의 온도조절장치 및 온도조절방법
JP2006156938A (ja) * 2004-10-29 2006-06-15 Tokyo Electron Ltd 基板載置台、基板処理装置、および基板の温度制御方法
KR20060121702A (ko) * 2005-05-23 2006-11-29 동경 엘렉트론 주식회사 정전 흡착 전극 및 처리 장치

Also Published As

Publication number Publication date
US20140076515A1 (en) 2014-03-20
KR101037461B1 (ko) 2011-05-26
CN101383314A (zh) 2009-03-11
US20090233443A1 (en) 2009-09-17
TW200931587A (en) 2009-07-16
CN100585828C (zh) 2010-01-27
KR20090024075A (ko) 2009-03-06
JP2009060011A (ja) 2009-03-19

Similar Documents

Publication Publication Date Title
TWI502680B (zh) A substrate stage, a substrate processing device, and a temperature control method
TWI725979B (zh) 承載器及基板處理裝置
JP7237461B2 (ja) マルチゾーン半導体基板支持体
JP5119297B2 (ja) 基板処理装置
JP5210706B2 (ja) プラズマ処理装置及びプラズマ処理方法
TWI434347B (zh) 用於化學氣相沉積設備的氣體注入單元
US20110180233A1 (en) Apparatus for controlling temperature uniformity of a showerhead
US20090159566A1 (en) Method and apparatus for controlling temperature of a substrate
TW202105650A (zh) 基板處理裝置
JP2012129547A (ja) 基板載置台、基板処理装置、および温度制御方法
TWM316492U (en) A liner suitable for covering the interior wall of a semiconductor processing chamber
US10113232B2 (en) Azimuthal mixer
JP3702068B2 (ja) 被処理基板の処理装置
JP6255267B2 (ja) 基板処理装置、加熱装置、天井断熱体及び半導体装置の製造方法
WO2010053173A1 (ja) 半導体ウェーハの温度制御装置および温度制御方法
WO2010006279A2 (en) Chamber components for cvd applications
US20110180243A1 (en) Apparatus for controlling temperature uniformity of a substrate
CN102534563A (zh) 一种用于金属有机化学气相沉积反应器的斜入式气体喷淋头
JP2019036630A (ja) 成膜装置
JP2000294538A (ja) 真空処理装置
KR102946278B1 (ko) 반도체 프로세싱 챔버를 위한 가스박스
JP7846265B2 (ja) 高温プロセスのための軸方向に冷却される金属シャワーヘッド
CN108231626A (zh) 气体处理装置和气体处理方法
CN119710648A (zh) 一种加热盘及薄膜沉积设备
JP7564237B2 (ja) マルチゾーン半導体基板支持体

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees