KR101037461B1 - 기판탑재대, 기판 처리 장치, 및 온도 제어 방법 - Google Patents

기판탑재대, 기판 처리 장치, 및 온도 제어 방법 Download PDF

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Publication number
KR101037461B1
KR101037461B1 KR1020080084461A KR20080084461A KR101037461B1 KR 101037461 B1 KR101037461 B1 KR 101037461B1 KR 1020080084461 A KR1020080084461 A KR 1020080084461A KR 20080084461 A KR20080084461 A KR 20080084461A KR 101037461 B1 KR101037461 B1 KR 101037461B1
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substrate
heat transfer
gas
transfer gas
inlet
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Korean (ko)
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KR20090024075A (ko
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야스하루 사사키
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020080084461A 2007-09-03 2008-08-28 기판탑재대, 기판 처리 장치, 및 온도 제어 방법 Active KR101037461B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00227708 2007-09-03
JP2007227708A JP2009060011A (ja) 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法

Publications (2)

Publication Number Publication Date
KR20090024075A KR20090024075A (ko) 2009-03-06
KR101037461B1 true KR101037461B1 (ko) 2011-05-26

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KR1020080084461A Active KR101037461B1 (ko) 2007-09-03 2008-08-28 기판탑재대, 기판 처리 장치, 및 온도 제어 방법

Country Status (5)

Country Link
US (2) US20090233443A1 (https=)
JP (1) JP2009060011A (https=)
KR (1) KR101037461B1 (https=)
CN (1) CN100585828C (https=)
TW (1) TWI502680B (https=)

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US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
JP5869899B2 (ja) 2011-04-01 2016-02-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー
NL2009189A (en) 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
CN105683839B (zh) 2013-09-27 2017-08-08 Asml荷兰有限公司 用于光刻设备的支撑台、光刻设备以及器件制造方法
KR102113624B1 (ko) * 2013-12-27 2020-05-21 엘지디스플레이 주식회사 표시패널 제조장치
JP6212412B2 (ja) * 2014-02-28 2017-10-11 日本特殊陶業株式会社 真空吸着部材
NL2015579A (en) 2014-10-23 2016-08-30 Asml Netherlands Bv Support table for a lithographic apparatus, method of loading a substrate, lithographic apparatus and device manufacturing method.
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2016136554A (ja) * 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104835761A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种边缘出气的可控温加热盘
CN104835765A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种多边形分布的凸台表面结构的可控温加热盘
KR102348108B1 (ko) * 2015-10-05 2022-01-10 주식회사 미코세라믹스 온도 편차 특성이 개선된 기판 가열 장치
WO2017170738A1 (ja) * 2016-03-30 2017-10-05 京セラ株式会社 吸着部材
WO2017221631A1 (ja) * 2016-06-23 2017-12-28 株式会社アルバック 保持装置
JP6918642B2 (ja) * 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
CN107910250A (zh) * 2017-11-16 2018-04-13 德淮半导体有限公司 晶片处理设备及方法
KR102516339B1 (ko) * 2018-04-06 2023-03-31 삼성전자주식회사 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법
JP7175114B2 (ja) * 2018-07-19 2022-11-18 東京エレクトロン株式会社 載置台及び電極部材
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
JP7407529B2 (ja) 2019-07-10 2024-01-04 東京エレクトロン株式会社 基板載置台、基板処理装置及び温度制御方法
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
CN112530846B (zh) * 2020-12-01 2024-06-21 北京北方华创微电子装备有限公司 承载盘及控温装置

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KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
KR20060121702A (ko) * 2005-05-23 2006-11-29 동경 엘렉트론 주식회사 정전 흡착 전극 및 처리 장치

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KR20020094353A (ko) * 2001-06-11 2002-12-18 삼성전자 주식회사 웨이퍼 쿨링 스테이지
KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
KR20050069684A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 반도체 웨이퍼용 정전척의 온도조절장치 및 온도조절방법
KR20060121702A (ko) * 2005-05-23 2006-11-29 동경 엘렉트론 주식회사 정전 흡착 전극 및 처리 장치

Also Published As

Publication number Publication date
US20140076515A1 (en) 2014-03-20
TWI502680B (zh) 2015-10-01
CN101383314A (zh) 2009-03-11
US20090233443A1 (en) 2009-09-17
TW200931587A (en) 2009-07-16
CN100585828C (zh) 2010-01-27
KR20090024075A (ko) 2009-03-06
JP2009060011A (ja) 2009-03-19

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