JP2009046368A - 閃亜鉛鉱型窒化物半導体自立基板、閃亜鉛鉱型窒化物半導体自立基板の製造方法、及び閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置 - Google Patents
閃亜鉛鉱型窒化物半導体自立基板、閃亜鉛鉱型窒化物半導体自立基板の製造方法、及び閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 233
- 239000004065 semiconductor Substances 0.000 title claims abstract description 168
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 120
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 229910052950 sphalerite Inorganic materials 0.000 title abstract 6
- 239000010410 layer Substances 0.000 claims abstract description 246
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 134
- 238000000034 method Methods 0.000 claims abstract description 78
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 54
- 239000011241 protective layer Substances 0.000 claims abstract description 9
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 73
- -1 zincblende nitride Chemical class 0.000 claims description 25
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 27
- 229910002704 AlGaN Inorganic materials 0.000 description 16
- 239000013078 crystal Substances 0.000 description 16
- 238000005253 cladding Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 238000005136 cathodoluminescence Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
【解決手段】(001)面を有するGaAs基板10の裏面にSiO2保護層20を、表面に約10nmのGaNバッファ層12を成長させる。アニールのあと、GaNバッファ層12上に1800nmのGaN層14を成長させる。つづいて、HVPE法によりGaN層14の上に所定膜厚のGaN層16を成長させたあと、成長基板1のGaAs基板10及びGaNバッファ層12を研磨、エッチング等により除去してGaN自立基板を得た。GaN層16の厚さが200μmでGaN層14の表面のウルツ鉱構造の割合が5%、GaN層16の厚さが500μmでウルツ鉱構造の割合が1.5%まで低下した。これらの閃亜鉛鉱型窒化物半導体自立基板を用いることにより、発光の単色性のよい発光装置の製造が可能となる。
【選択図】図1
Description
図1は、本発明の実施の形態に係る閃亜鉛鉱型窒化物半導体自立基板の製造の流れを示す。
ここで、本発明の実施の形態の比較例に係る閃亜鉛鉱型窒化物半導体自立基板の製造方法を説明する。比較例に係る閃亜鉛鉱型窒化物半導体自立基板の製造方法では、本発明の実施の形態においてGaAs基板10の裏面に形成するSiO2層20を形成しない点を除き、本発明の実施の形態と同一工程により窒化物半導体自立基板を形成する。したがって、相違点を除き詳細な説明は省略する。
本発明の実施の形態に係る閃亜鉛鉱型窒化物半導体自立基板の製造方法によれば、厚さが200μm以上であり、ウルツ鉱構造の窒化物半導体が窒化物半導体自立基板の表面全体に占める割合が5%以下であり、更に、窒化物半導体自立基板の表面近傍におけるAs濃度が1×1019/cm3以下の閃亜鉛鉱型窒化物半導体自立基板を形成することができる。すなわち、本実施の形態によれば、主として閃亜鉛鉱型から形成される窒化物半導体自立基板を形成することができる。これにより、本実施の形態において形成された窒化物半導体自立基板を用いて、発光の単色性のよいLED、LD等の発光装置の製造をすることができる。
図5Aは、本発明の実施の形態において形成された閃亜鉛鉱型窒化物半導体自立基板上に緑色LED構造を形成する応用例の工程を示す。
図5(b)に示すような閃亜鉛鉱型窒化物半導体自立基板としてのGaN自立基板30を形成した後、GaN自立基板30の表面と裏面を研磨して、両側が鏡面のGaN自立基板を形成した。そして、両側を鏡面としたGaN自立基板を用いて、応用例1と同様に緑色LEDを製作した。製作した応用例1の変形例に係る緑色LEDも、応用例1と略同様の結果を示した。
図6は、本発明の応用例の比較例に係る窒化物半導体自立基板上に緑色LED構造を形成する工程を示す。
図7は、本発明の実施の形態において形成された閃亜鉛鉱型窒化物半導体自立基板を用いて形成した応用例に係る緑色LDの断面図を示す。
2、3 エピタキシャル基板
10 GaAs基板
12 GaNバッファ層
14、16 GaN層
20 SiO2層
30 GaN自立基板
32 n型GaN層
34 活性層
36 p型AlGaN層
38 p型GaN層
40 p型用電極
45 n型用電極
50 半導体積層構造
60 絶縁層
100、105 発光装置
500 n型クラッド層
505 n型ガイド層
510 活性層
515 un−キャップ層
520 p型ガイド層
525 p型クラッド層
530 p型コンタクト層
Claims (10)
- 表面と、前記表面の反対側の裏面とを有し、
前記表面と前記裏面との間が200μm以上であり、前記表面において、閃亜鉛鉱構造の窒化物半導体が占める面積の割合が95%以上である
閃亜鉛鉱型窒化物半導体自立基板。 - 前記表面近傍のAs濃度が、1×1019/cm3以下である
請求項1に記載の閃亜鉛鉱型窒化物半導体自立基板。 - 前記表面における転位密度が、7×106/cm2以下である
請求項1又は2に記載の閃亜鉛鉱型窒化物半導体自立基板。 - 閃亜鉛鉱型のGaAs基板の表面に、閃亜鉛鉱型の窒化物半導体を有する低温バッファ層を形成する低温バッファ層形成工程と、
前記低温バッファ層上に閃亜鉛鉱型の窒化物半導体層を形成する窒化物半導体層形成工程と、
前記窒化物半導体層を形成した後、前記GaAs基板を除去して閃亜鉛鉱型の窒化物半導体自立基板を形成するGaAs基板除去工程と
を備える閃亜鉛鉱型窒化物半導体自立基板の製造方法。 - 前記低温バッファ層形成工程の前に、前記GaAs基板の前記低温バッファ層が形成される面の反対側に保護層を形成する保護層形成工程
を更に備える請求項4に記載の閃亜鉛鉱型窒化物半導体自立基板の製造方法。 - 前記GaAs基板の表面が、(001)面、(111)A面、又は(111)B面のいずれかの面を有する
請求項4又は5に記載の閃亜鉛鉱型窒化物半導体自立基板の製造方法。 - 表面と、前記表面の反対側の裏面とを有し、前記表面と前記裏面との間が200μm以上であり、前記表面において、閃亜鉛鉱構造の窒化物半導体が占める面積の割合が95%以上である閃亜鉛鉱型窒化物半導体自立基板と、
前記閃亜鉛鉱型窒化物半導体自立基板上に形成された発光層と
を備える閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置。 - 前記閃亜鉛鉱型窒化物半導体自立基板の表面近傍のAs濃度が、1×1019/cm3以下である
請求項7に記載の閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置。 - 前記閃亜鉛鉱型窒化物半導体自立基板の前記表面における転位密度が、7×106/cm2以下である
請求項7又は8に記載の閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置。 - 前記発光層が、緑色領域の光を発する
請求項7から9のいずれか1項に記載の閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置。
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US12/000,451 US8030682B2 (en) | 2007-08-22 | 2007-12-12 | Zinc-blende nitride semiconductor free-standing substrate, method for fabricating same, and light-emitting device employing same |
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