JP2009043836A5 - - Google Patents

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Publication number
JP2009043836A5
JP2009043836A5 JP2007205597A JP2007205597A JP2009043836A5 JP 2009043836 A5 JP2009043836 A5 JP 2009043836A5 JP 2007205597 A JP2007205597 A JP 2007205597A JP 2007205597 A JP2007205597 A JP 2007205597A JP 2009043836 A5 JP2009043836 A5 JP 2009043836A5
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JP
Japan
Prior art keywords
resin
semiconductor light
recess
light emitting
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007205597A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009043836A (ja
JP5043554B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007205597A priority Critical patent/JP5043554B2/ja
Priority claimed from JP2007205597A external-priority patent/JP5043554B2/ja
Priority to CN200810131329.6A priority patent/CN101364629B/zh
Priority to US12/187,570 priority patent/US7859001B2/en
Publication of JP2009043836A publication Critical patent/JP2009043836A/ja
Publication of JP2009043836A5 publication Critical patent/JP2009043836A5/ja
Application granted granted Critical
Publication of JP5043554B2 publication Critical patent/JP5043554B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007205597A 2007-08-07 2007-08-07 半導体発光装置 Expired - Fee Related JP5043554B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007205597A JP5043554B2 (ja) 2007-08-07 2007-08-07 半導体発光装置
CN200810131329.6A CN101364629B (zh) 2007-08-07 2008-08-06 半导体发光装置
US12/187,570 US7859001B2 (en) 2007-08-07 2008-08-07 Semiconductor light emitting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007205597A JP5043554B2 (ja) 2007-08-07 2007-08-07 半導体発光装置

Publications (3)

Publication Number Publication Date
JP2009043836A JP2009043836A (ja) 2009-02-26
JP2009043836A5 true JP2009043836A5 (enExample) 2010-09-09
JP5043554B2 JP5043554B2 (ja) 2012-10-10

Family

ID=40345625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007205597A Expired - Fee Related JP5043554B2 (ja) 2007-08-07 2007-08-07 半導体発光装置

Country Status (3)

Country Link
US (1) US7859001B2 (enExample)
JP (1) JP5043554B2 (enExample)
CN (1) CN101364629B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2472613B1 (en) * 2009-08-27 2018-11-28 Kyocera Corporation Light-emitting device
TWI384177B (zh) * 2009-09-04 2013-02-01 Au Optronics Corp 具高發光效率之光源裝置及其製造方法
TW201145597A (en) * 2010-01-28 2011-12-16 Lg Innotek Co Ltd Light emitting device package
JP5497520B2 (ja) * 2010-04-14 2014-05-21 株式会社小糸製作所 発光モジュールおよび光波長変換部材
JP5426484B2 (ja) * 2010-06-07 2014-02-26 株式会社東芝 半導体発光装置の製造方法
KR101708025B1 (ko) * 2010-08-19 2017-02-20 서울반도체 주식회사 렌즈 및 그것을 포함하는 발광장치
JP5767062B2 (ja) * 2010-09-30 2015-08-19 日東電工株式会社 発光ダイオード封止材、および、発光ダイオード装置の製造方法
TW201240161A (en) * 2011-03-17 2012-10-01 Lextar Electronics Corp Light emiting diode package structure and manufacturing method thereof
JP2013084889A (ja) * 2011-09-30 2013-05-09 Toshiba Corp 半導体発光装置及びその製造方法
WO2013122831A1 (en) * 2012-02-13 2013-08-22 Cree, Inc. Improved light emitting devices and methods
CN102623623A (zh) * 2012-03-26 2012-08-01 李海涛 一种软胶保护内芯的表面贴装式led装置
TWM453101U (zh) * 2012-05-24 2013-05-11 Gem Weltronics Twn Corp 具有多層式結構之一體化高效率照明裝置
KR101367918B1 (ko) * 2012-09-24 2014-02-28 (주)라이타이저코리아 발광 소자 패키지
JP6097084B2 (ja) 2013-01-24 2017-03-15 スタンレー電気株式会社 半導体発光装置
CN105355761B (zh) * 2014-09-18 2018-08-28 中山大学 一种光色均匀的led荧光粉封装结构及其透明模具
JP6493348B2 (ja) * 2016-09-30 2019-04-03 日亜化学工業株式会社 発光装置
JP6802693B2 (ja) * 2016-11-24 2020-12-16 スタンレー電気株式会社 半導体発光装置
JP2018148110A (ja) * 2017-03-08 2018-09-20 スタンレー電気株式会社 発光装置及びその製造方法
DE102017105035B4 (de) * 2017-03-09 2024-09-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lichtemittierendes bauteil und verfahren zum herstellen eines lichtemittierenden bauteils
JP7096473B2 (ja) * 2017-09-20 2022-07-06 日亜化学工業株式会社 発光装置
JP6555335B2 (ja) * 2017-12-28 2019-08-07 日亜化学工業株式会社 発光装置及び発光装置の製造方法
TWI648878B (zh) * 2018-05-15 2019-01-21 東貝光電科技股份有限公司 Led發光源、led發光源之製造方法及其直下式顯示器
JP7277760B2 (ja) * 2019-08-19 2023-05-19 日亜化学工業株式会社 発光装置及びその製造方法
JP2023133730A (ja) * 2022-03-14 2023-09-27 スタンレー電気株式会社 半導体発光装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111343A (ja) * 1993-10-13 1995-04-25 Matsushita Electron Corp 光電装置
JP2001111109A (ja) * 1999-10-07 2001-04-20 Sharp Corp 窒化ガリウム系化合物半導体発光素子
JP2002033520A (ja) 2000-07-14 2002-01-31 Toshiba Electronic Engineering Corp 半導体発光装置
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
US6791116B2 (en) * 2002-04-30 2004-09-14 Toyoda Gosei Co., Ltd. Light emitting diode
JP4366161B2 (ja) * 2003-09-19 2009-11-18 スタンレー電気株式会社 半導体発光装置
JP4622253B2 (ja) * 2004-01-22 2011-02-02 日亜化学工業株式会社 発光デバイス及びその製造方法
JP4504056B2 (ja) * 2004-03-22 2010-07-14 スタンレー電気株式会社 半導体発光装置の製造方法
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
JP2006093672A (ja) * 2004-08-26 2006-04-06 Toshiba Corp 半導体発光装置
US7842526B2 (en) * 2004-09-09 2010-11-30 Toyoda Gosei Co., Ltd. Light emitting device and method of producing same
JP4389126B2 (ja) * 2004-10-04 2009-12-24 スタンレー電気株式会社 半導体発光装置及びその製造方法
JP2007043074A (ja) * 2005-06-27 2007-02-15 Toshiba Lighting & Technology Corp 照明装置
JP2007109915A (ja) * 2005-10-14 2007-04-26 Stanley Electric Co Ltd 発光ダイオード
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
US8092735B2 (en) * 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant

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