JP2009016808A5 - - Google Patents

Download PDF

Info

Publication number
JP2009016808A5
JP2009016808A5 JP2008146459A JP2008146459A JP2009016808A5 JP 2009016808 A5 JP2009016808 A5 JP 2009016808A5 JP 2008146459 A JP2008146459 A JP 2008146459A JP 2008146459 A JP2008146459 A JP 2008146459A JP 2009016808 A5 JP2009016808 A5 JP 2009016808A5
Authority
JP
Japan
Prior art keywords
fiber
resin
semiconductor device
thru
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008146459A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009016808A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008146459A priority Critical patent/JP2009016808A/ja
Priority claimed from JP2008146459A external-priority patent/JP2009016808A/ja
Publication of JP2009016808A publication Critical patent/JP2009016808A/ja
Publication of JP2009016808A5 publication Critical patent/JP2009016808A5/ja
Withdrawn legal-status Critical Current

Links

JP2008146459A 2007-06-07 2008-06-04 半導体装置 Withdrawn JP2009016808A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008146459A JP2009016808A (ja) 2007-06-07 2008-06-04 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007151168 2007-06-07
JP2008146459A JP2009016808A (ja) 2007-06-07 2008-06-04 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012139924A Division JP2012212917A (ja) 2007-06-07 2012-06-21 半導体装置

Publications (2)

Publication Number Publication Date
JP2009016808A JP2009016808A (ja) 2009-01-22
JP2009016808A5 true JP2009016808A5 (https=) 2011-07-07

Family

ID=39766836

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2008146459A Withdrawn JP2009016808A (ja) 2007-06-07 2008-06-04 半導体装置
JP2012139924A Withdrawn JP2012212917A (ja) 2007-06-07 2012-06-21 半導体装置
JP2014045961A Expired - Fee Related JP5770325B2 (ja) 2007-06-07 2014-03-10 半導体装置
JP2015126686A Withdrawn JP2015207785A (ja) 2007-06-07 2015-06-24 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2012139924A Withdrawn JP2012212917A (ja) 2007-06-07 2012-06-21 半導体装置
JP2014045961A Expired - Fee Related JP5770325B2 (ja) 2007-06-07 2014-03-10 半導体装置
JP2015126686A Withdrawn JP2015207785A (ja) 2007-06-07 2015-06-24 半導体装置

Country Status (4)

Country Link
US (1) US7906847B2 (https=)
EP (1) EP2001047A1 (https=)
JP (4) JP2009016808A (https=)
KR (1) KR20080108047A (https=)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009031482A1 (en) 2007-09-07 2009-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5460108B2 (ja) * 2008-04-18 2014-04-02 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
WO2009131132A1 (en) 2008-04-25 2009-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20090114171A (ko) * 2008-04-29 2009-11-03 삼성전자주식회사 표시 장치
WO2009139282A1 (en) 2008-05-12 2009-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
EP2297778A1 (en) * 2008-05-23 2011-03-23 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
WO2009142310A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20110027760A (ko) * 2008-06-06 2011-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5248412B2 (ja) * 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8053253B2 (en) * 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5473413B2 (ja) * 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
TWI475282B (zh) * 2008-07-10 2015-03-01 Semiconductor Energy Lab 液晶顯示裝置和其製造方法
KR101925772B1 (ko) 2008-07-10 2018-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
JP2010041040A (ja) * 2008-07-10 2010-02-18 Semiconductor Energy Lab Co Ltd 光電変換装置および光電変換装置の製造方法
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010032611A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
WO2010038599A1 (en) 2008-10-01 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010126876A1 (en) 2009-04-27 2010-11-04 Drexel University Transparent conformal polymer antennas for rfid and other wireless communications applications
WO2010140539A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
CN102460721B (zh) * 2009-06-05 2015-07-01 株式会社半导体能源研究所 光电转换装置及其制造方法
KR101732397B1 (ko) * 2009-06-05 2017-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그의 제작 방법
TW201110802A (en) * 2009-06-24 2011-03-16 Seiko Epson Corp Electro-optical device, electronic device, and illumination apparatus
US8766269B2 (en) * 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
TWI517268B (zh) * 2009-08-07 2016-01-11 半導體能源研究所股份有限公司 端子構造的製造方法和電子裝置的製造方法
US8345435B2 (en) * 2009-08-07 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof
KR101979327B1 (ko) * 2009-09-16 2019-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
JP5719560B2 (ja) * 2009-10-21 2015-05-20 株式会社半導体エネルギー研究所 端子構造の作製方法
KR101617280B1 (ko) * 2009-10-21 2016-05-03 엘지디스플레이 주식회사 플라스틱 기판을 이용한 표시장치 제조 방법
KR101094292B1 (ko) 2010-05-28 2011-12-19 삼성모바일디스플레이주식회사 유기 발광 표시 장치
KR101798487B1 (ko) * 2010-06-01 2017-11-17 삼성디스플레이 주식회사 표시 장치
KR101201720B1 (ko) 2010-07-29 2012-11-15 삼성디스플레이 주식회사 표시 장치 및 유기 발광 표시 장치
CN103891042B (zh) * 2011-10-19 2018-06-19 惠普发展公司,有限责任合伙企业 包括信号传递束和信号阻塞束的材料
US20140355194A1 (en) * 2012-01-16 2014-12-04 Nec Casio Mobile Communications, Ltd. Portable terminal device
US8940618B2 (en) * 2012-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cutting semiconductor wafers
KR102056086B1 (ko) 2012-08-24 2019-12-16 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그의 제조 방법
JP6024621B2 (ja) 2012-08-24 2016-11-16 デクセリアルズ株式会社 異方性導電フィルムの製造方法及び異方性導電フィルム
KR20140071813A (ko) 2012-12-04 2014-06-12 삼성전자주식회사 파이버 상에 형성된 저항성 메모리 소자 및 그 제종 방법
CN104903947B (zh) * 2012-12-17 2018-03-20 司隆科技有限公司 用于柔性显示器的平坦化纤维基板的制造方法
US8688592B1 (en) * 2013-01-08 2014-04-01 Michael T. Abramson System and method for processing transactions
JP2014209564A (ja) * 2013-03-28 2014-11-06 日東電工株式会社 熱硬化性封止用シート、及び、セパレータ付き熱硬化性封止用シート
KR102086098B1 (ko) * 2013-07-03 2020-03-09 삼성디스플레이 주식회사 표시 장치
US20150069133A1 (en) * 2013-09-09 2015-03-12 Zhengfang Qian Nanotube patterns for chipless rfid tags and methods of making the same
WO2016033557A2 (en) * 2014-08-29 2016-03-03 University Of Virginia Quasi-vertical diode with integrated ohmic contact base and related method thereof
JP6463662B2 (ja) * 2015-10-06 2019-02-06 信越化学工業株式会社 半導体封止用基材付封止材、半導体封止用基材付封止材の製造方法、及び半導体装置の製造方法
JP2017147537A (ja) * 2016-02-16 2017-08-24 レノボ・シンガポール・プライベート・リミテッド 電子機器および電子機器用筐体
JP6686540B2 (ja) * 2016-03-04 2020-04-22 三菱瓦斯化学株式会社 プリント配線基板
JP6779884B2 (ja) * 2016-07-08 2020-11-04 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. 薄膜トランジスタ、薄膜トランジスタを有するゲートドライバオンアレイ及び表示装置、並びにそれらの製造方法
WO2020040229A1 (ja) * 2018-08-24 2020-02-27 京セラ株式会社 構造体、アンテナ、無線通信モジュール、および無線通信機器
US10796976B2 (en) * 2018-10-31 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
TWI827809B (zh) * 2019-04-04 2024-01-01 丹麥商卡普雷斯股份有限公司 測量測試樣本之電性的方法,以及多層測試樣本
JP2021132208A (ja) * 2020-02-19 2021-09-09 東レ株式会社 半導体装置およびその製造方法、ならびに無線通信装置

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2026113C (en) * 1989-01-25 1998-12-01 Tsunoe Igarashi Prepreg, composite molded body, and method of manufacture of the composite molded body
DE3907757A1 (de) * 1989-03-10 1990-09-13 Mtu Muenchen Gmbh Schutzfolie
JPH05190999A (ja) * 1992-01-08 1993-07-30 Ibiden Co Ltd Icカード用プリント配線板
JPH05190582A (ja) 1992-01-08 1993-07-30 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JPH0794744A (ja) * 1993-09-20 1995-04-07 Hitachi Ltd Misトランジスタ
EP0682445B1 (en) 1994-05-11 2000-07-05 Thomson Consumer Electronics, Inc. Convergence correction
TW371285B (en) * 1994-09-19 1999-10-01 Amp Akzo Linlam Vof Foiled UD-prepreg and PWB laminate prepared therefrom
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
JP3406727B2 (ja) 1995-03-10 2003-05-12 株式会社半導体エネルギー研究所 表示装置
JP3256110B2 (ja) * 1995-09-28 2002-02-12 シャープ株式会社 液晶表示装置
JPH1092980A (ja) 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
US5930139A (en) 1996-11-13 1999-07-27 Kimberly-Clark Worldwide, Inc. Process and apparatus for registration control of material printed at machine product length
JPH10338809A (ja) * 1997-04-08 1998-12-22 Sumitomo Chem Co Ltd 低誘電率樹脂とパラ配向芳香族ポリアミドとからなる複合フィルム、そのプリプレグおよびそれらの用途
JPH11214700A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
JPH11317475A (ja) * 1998-02-27 1999-11-16 Canon Inc 半導体用封止材樹脂および半導体素子
TW484101B (en) * 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP3160586B2 (ja) * 1999-04-27 2001-04-25 松下電子工業株式会社 Cmosインバータ及びそれを用いたスタンダードセル
US6224965B1 (en) * 1999-06-25 2001-05-01 Honeywell International Inc. Microfiber dielectrics which facilitate laser via drilling
JP4423779B2 (ja) 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
KR100430001B1 (ko) * 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
JP4137460B2 (ja) * 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3949599B2 (ja) * 2002-03-22 2007-07-25 株式会社半導体エネルギー研究所 半導体記憶装置
JP4526772B2 (ja) * 2002-03-26 2010-08-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US7485489B2 (en) * 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
WO2004001848A1 (en) 2002-06-19 2003-12-31 Sten Bjorsell Electronics circuit manufacture
US7132311B2 (en) * 2002-07-26 2006-11-07 Intel Corporation Encapsulation of a stack of semiconductor dice
WO2004107452A1 (ja) * 2003-05-30 2004-12-09 Matsushita Electric Industrial Co., Ltd. 半導体装置およびその製造方法
JP4828088B2 (ja) 2003-06-05 2011-11-30 凸版印刷株式会社 Icタグ
US20050233122A1 (en) * 2004-04-19 2005-10-20 Mikio Nishimura Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein
JP2005327900A (ja) * 2004-05-14 2005-11-24 Sanyo Electric Co Ltd 半導体装置
US7161199B2 (en) * 2004-08-24 2007-01-09 Freescale Semiconductor, Inc. Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof
JP5072208B2 (ja) * 2004-09-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2006090445A1 (ja) * 2005-02-23 2006-08-31 Fujitsu Limited 半導体回路装置及びその半導体回路装置の製造方法
US7727859B2 (en) * 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
JP2007059821A (ja) * 2005-08-26 2007-03-08 Shinko Electric Ind Co Ltd 配線基板の製造方法
TWI431726B (zh) * 2006-06-01 2014-03-21 半導體能源研究所股份有限公司 非揮發性半導體記憶體裝置
CN101479747B (zh) * 2006-06-26 2011-05-18 株式会社半导体能源研究所 包括半导体器件的纸及其制造方法
EP1970951A3 (en) * 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JP2009016808A5 (https=)
JP2008262547A5 (https=)
JP2009054145A5 (https=)
JP2010041040A5 (ja) 光電変換装置
US9362202B2 (en) Electronic device and method for manufacturing same
JP2009081426A5 (https=)
JP2011014889A5 (https=)
JP2010040522A5 (https=)
WO2014147222A3 (en) Improvements in or relating to fibre reinforced composites
MX2009005599A (es) Tela y laminado de polietileno multiaxial.
JP2010272570A5 (https=)
JP2007176169A5 (https=)
JP2015017343A5 (https=)
JP5959697B2 (ja) 熱伝導性シート
JP2012186241A (ja) 熱伝導性シート
TWI656672B (zh) 可撓性環境敏感電子元件封裝體
RU2013122083A (ru) Длинномерный силовой конструкционный элемент типа строительной балки из полимерного композиционного материала
JPWO2019012983A1 (ja) 繊維構造体及び繊維強化複合材
JP3597426B2 (ja) 熱伝導材
JP5873244B2 (ja) 放熱基板
EP3135475B1 (en) Composite material structure
JP6661273B2 (ja) 繊維基材を積層する方法、繊維基材群ロールの製造方法、繊維基材群、および航空機
KR101478805B1 (ko) 섬유 기반의 연성회로기판 및 그의 제조 방법
US12071714B2 (en) Anisotropic thermal conductive resin fiber, anisotropic thermal conductive resin member, and manufacturing method of these
JP2017155391A (ja) 繊維強化プラスチック用基材、繊維強化プラスチック用多層基材、繊維強化プラスチック用プリフォーム及びその製造方法