KR20080108047A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20080108047A
KR20080108047A KR1020080053282A KR20080053282A KR20080108047A KR 20080108047 A KR20080108047 A KR 20080108047A KR 1020080053282 A KR1020080053282 A KR 1020080053282A KR 20080053282 A KR20080053282 A KR 20080053282A KR 20080108047 A KR20080108047 A KR 20080108047A
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KR
South Korea
Prior art keywords
film
pair
structures
semiconductor
fibers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020080053282A
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English (en)
Korean (ko)
Inventor
오타니 히사시
스기야마 에이지
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20080108047A publication Critical patent/KR20080108047A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020080053282A 2007-06-07 2008-06-05 반도체 장치 Ceased KR20080108047A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00151168 2007-06-07
JP2007151168 2007-06-07

Publications (1)

Publication Number Publication Date
KR20080108047A true KR20080108047A (ko) 2008-12-11

Family

ID=39766836

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080053282A Ceased KR20080108047A (ko) 2007-06-07 2008-06-05 반도체 장치

Country Status (4)

Country Link
US (1) US7906847B2 (https=)
EP (1) EP2001047A1 (https=)
JP (4) JP2009016808A (https=)
KR (1) KR20080108047A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847246B2 (en) 2010-05-28 2014-09-30 Samsung Display Co., Ltd. Organic light emitting diode display
KR20150004679A (ko) * 2013-07-03 2015-01-13 삼성디스플레이 주식회사 표시 장치
US9496494B2 (en) 2012-12-04 2016-11-15 Samsung Electronics Co., Ltd. Resistive random access memory devices formed on fiber and methods of manufacturing the same

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WO2009031482A1 (en) 2007-09-07 2009-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5460108B2 (ja) 2008-04-18 2014-04-02 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
KR101596698B1 (ko) 2008-04-25 2016-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR20090114171A (ko) * 2008-04-29 2009-11-03 삼성전자주식회사 표시 장치
WO2009139282A1 (en) 2008-05-12 2009-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2009142309A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2009142310A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5248412B2 (ja) * 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2009148001A1 (en) * 2008-06-06 2009-12-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8053253B2 (en) 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5473413B2 (ja) * 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
JP2010041040A (ja) * 2008-07-10 2010-02-18 Semiconductor Energy Lab Co Ltd 光電変換装置および光電変換装置の製造方法
KR102026604B1 (ko) * 2008-07-10 2019-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
TWI475282B (zh) * 2008-07-10 2015-03-01 Semiconductor Energy Lab 液晶顯示裝置和其製造方法
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010032611A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
KR101611643B1 (ko) 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2010126876A1 (en) * 2009-04-27 2010-11-04 Drexel University Transparent conformal polymer antennas for rfid and other wireless communications applications
CN102460722B (zh) * 2009-06-05 2015-04-01 株式会社半导体能源研究所 光电转换装置及其制造方法
KR101677076B1 (ko) * 2009-06-05 2016-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스 및 그 제조 방법
WO2010140522A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
TW201110802A (en) * 2009-06-24 2011-03-16 Seiko Epson Corp Electro-optical device, electronic device, and illumination apparatus
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
US8345435B2 (en) * 2009-08-07 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof
TWI517268B (zh) * 2009-08-07 2016-01-11 半導體能源研究所股份有限公司 端子構造的製造方法和電子裝置的製造方法
KR102369012B1 (ko) 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
JP5719560B2 (ja) * 2009-10-21 2015-05-20 株式会社半導体エネルギー研究所 端子構造の作製方法
KR101617280B1 (ko) * 2009-10-21 2016-05-03 엘지디스플레이 주식회사 플라스틱 기판을 이용한 표시장치 제조 방법
KR101798487B1 (ko) * 2010-06-01 2017-11-17 삼성디스플레이 주식회사 표시 장치
KR101201720B1 (ko) 2010-07-29 2012-11-15 삼성디스플레이 주식회사 표시 장치 및 유기 발광 표시 장치
GB2512755B (en) * 2011-10-19 2016-02-03 Hewlett Packard Development Co Material including signal passing and signal blocking strands
US20140355194A1 (en) * 2012-01-16 2014-12-04 Nec Casio Mobile Communications, Ltd. Portable terminal device
US8940618B2 (en) * 2012-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cutting semiconductor wafers
KR101716945B1 (ko) 2012-08-24 2017-03-15 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그의 제조 방법
KR101716987B1 (ko) 2012-08-24 2017-03-15 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름의 제조 방법 및 이방성 도전 필름
KR101402743B1 (ko) * 2012-12-17 2014-06-02 코오롱글로텍주식회사 플렉서블 디스플레이를 위한 평탄화 섬유기판의 제조방법
US8688592B1 (en) * 2013-01-08 2014-04-01 Michael T. Abramson System and method for processing transactions
JP2014209564A (ja) * 2013-03-28 2014-11-06 日東電工株式会社 熱硬化性封止用シート、及び、セパレータ付き熱硬化性封止用シート
US20150069133A1 (en) * 2013-09-09 2015-03-12 Zhengfang Qian Nanotube patterns for chipless rfid tags and methods of making the same
WO2016033557A2 (en) * 2014-08-29 2016-03-03 University Of Virginia Quasi-vertical diode with integrated ohmic contact base and related method thereof
JP6463662B2 (ja) * 2015-10-06 2019-02-06 信越化学工業株式会社 半導体封止用基材付封止材、半導体封止用基材付封止材の製造方法、及び半導体装置の製造方法
JP2017147537A (ja) * 2016-02-16 2017-08-24 レノボ・シンガポール・プライベート・リミテッド 電子機器および電子機器用筐体
JP6686540B2 (ja) * 2016-03-04 2020-04-22 三菱瓦斯化学株式会社 プリント配線基板
JP6779884B2 (ja) * 2016-07-08 2020-11-04 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 薄膜トランジスタ、薄膜トランジスタを有するゲートドライバオンアレイ及び表示装置、並びにそれらの製造方法
CN112585812B (zh) * 2018-08-24 2023-07-25 京瓷株式会社 谐振构造体、天线、无线通信模块以及无线通信设备
US10796976B2 (en) * 2018-10-31 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
TWI827809B (zh) * 2019-04-04 2024-01-01 丹麥商卡普雷斯股份有限公司 測量測試樣本之電性的方法，以及多層測試樣本
JP2021132208A (ja) * 2020-02-19 2021-09-09 東レ株式会社 半導体装置およびその製造方法、ならびに無線通信装置

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847246B2 (en) 2010-05-28 2014-09-30 Samsung Display Co., Ltd. Organic light emitting diode display
US9496494B2 (en) 2012-12-04 2016-11-15 Samsung Electronics Co., Ltd. Resistive random access memory devices formed on fiber and methods of manufacturing the same
KR20150004679A (ko) * 2013-07-03 2015-01-13 삼성디스플레이 주식회사 표시 장치

Also Published As

Publication number Publication date
JP5770325B2 (ja) 2015-08-26
EP2001047A1 (en) 2008-12-10
JP2009016808A (ja) 2009-01-22
US20080303140A1 (en) 2008-12-11
US7906847B2 (en) 2011-03-15
JP2014160826A (ja) 2014-09-04
JP2012212917A (ja) 2012-11-01
JP2015207785A (ja) 2015-11-19

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St.27 status event code: A-6-3-E10-E12-rex-PB0901

E801 Decision on dismissal of amendment
PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL NUMBER: 2015101005740; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20150930

Effective date: 20160825

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20160825

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2008 0053282

Appeal request date: 20150930

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2015101005740

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000