JP2009010409A5 - - Google Patents

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Publication number
JP2009010409A5
JP2009010409A5 JP2008213117A JP2008213117A JP2009010409A5 JP 2009010409 A5 JP2009010409 A5 JP 2009010409A5 JP 2008213117 A JP2008213117 A JP 2008213117A JP 2008213117 A JP2008213117 A JP 2008213117A JP 2009010409 A5 JP2009010409 A5 JP 2009010409A5
Authority
JP
Japan
Prior art keywords
substrate
support
ferroelectric material
thin film
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008213117A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009010409A (ja
Filing date
Publication date
Priority claimed from FR9606085A external-priority patent/FR2748850B1/fr
Application filed filed Critical
Publication of JP2009010409A publication Critical patent/JP2009010409A/ja
Publication of JP2009010409A5 publication Critical patent/JP2009010409A5/ja
Pending legal-status Critical Current

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JP2008213117A 1996-05-15 2008-08-21 固体材料の薄膜形成方法及び該方法の応用 Pending JP2009010409A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9606085A FR2748850B1 (fr) 1996-05-15 1996-05-15 Procede de realisation d'un film mince de materiau solide et applications de ce procede

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP54059597A Division JP4659929B2 (ja) 1996-05-15 1997-05-13 固体材料の薄膜形成方法及び該方法の応用

Publications (2)

Publication Number Publication Date
JP2009010409A JP2009010409A (ja) 2009-01-15
JP2009010409A5 true JP2009010409A5 (enExample) 2010-11-25

Family

ID=9492176

Family Applications (2)

Application Number Title Priority Date Filing Date
JP54059597A Expired - Lifetime JP4659929B2 (ja) 1996-05-15 1997-05-13 固体材料の薄膜形成方法及び該方法の応用
JP2008213117A Pending JP2009010409A (ja) 1996-05-15 2008-08-21 固体材料の薄膜形成方法及び該方法の応用

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP54059597A Expired - Lifetime JP4659929B2 (ja) 1996-05-15 1997-05-13 固体材料の薄膜形成方法及び該方法の応用

Country Status (7)

Country Link
US (1) US6190998B1 (enExample)
EP (1) EP0902843B1 (enExample)
JP (2) JP4659929B2 (enExample)
KR (1) KR20000011051A (enExample)
DE (1) DE69701571T2 (enExample)
FR (1) FR2748850B1 (enExample)
WO (1) WO1997043461A1 (enExample)

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US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
JP4794810B2 (ja) * 2003-03-20 2011-10-19 シャープ株式会社 半導体装置の製造方法
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
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FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
US20070243703A1 (en) * 2006-04-14 2007-10-18 Aonex Technololgies, Inc. Processes and structures for epitaxial growth on laminate substrates
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8124499B2 (en) * 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080128641A1 (en) * 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
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FR2914492A1 (fr) * 2007-03-27 2008-10-03 Soitec Silicon On Insulator Procede de fabrication de structures avec couches ferroelectriques reportees.
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US7732301B1 (en) 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
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FR2919427B1 (fr) * 2007-07-26 2010-12-03 Soitec Silicon On Insulator Structure a reservoir de charges.
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2924272B1 (fr) * 2007-11-28 2010-06-11 Commissariat Energie Atomique Procede de transfert de films
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2930674A1 (fr) * 2008-04-29 2009-10-30 Soitec Silicon On Insulator Procede de traitement d'une heterostructure comportant une couche mince en materiau ferroelectrique
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
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FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
FR2961719B1 (fr) * 2010-06-24 2013-09-27 Soitec Silicon On Insulator Procede de traitement d'une piece en un materiau compose
JP5786393B2 (ja) * 2011-03-18 2015-09-30 株式会社村田製作所 水晶デバイスの製造方法
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
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FR3064820B1 (fr) 2017-03-31 2019-11-29 Soitec Procede d'ajustement de l'etat de contrainte d'un film piezoelectrique
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