DE69701571T2 - Realisierungsmethode einer dünnschicht aus festem material und anwendung dieser methode - Google Patents

Realisierungsmethode einer dünnschicht aus festem material und anwendung dieser methode

Info

Publication number
DE69701571T2
DE69701571T2 DE69701571T DE69701571T DE69701571T2 DE 69701571 T2 DE69701571 T2 DE 69701571T2 DE 69701571 T DE69701571 T DE 69701571T DE 69701571 T DE69701571 T DE 69701571T DE 69701571 T2 DE69701571 T2 DE 69701571T2
Authority
DE
Germany
Prior art keywords
substrate
support
thin film
ions
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69701571T
Other languages
German (de)
English (en)
Other versions
DE69701571D1 (de
Inventor
Bernard Aspar
Michel Bruel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69701571D1 publication Critical patent/DE69701571D1/de
Publication of DE69701571T2 publication Critical patent/DE69701571T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69701571T 1996-05-15 1997-05-13 Realisierungsmethode einer dünnschicht aus festem material und anwendung dieser methode Expired - Lifetime DE69701571T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9606085A FR2748850B1 (fr) 1996-05-15 1996-05-15 Procede de realisation d'un film mince de materiau solide et applications de ce procede
PCT/FR1997/000842 WO1997043461A1 (fr) 1996-05-15 1997-05-13 Procede de realisation d'un film mince de materiau solide et applications de ce procede

Publications (2)

Publication Number Publication Date
DE69701571D1 DE69701571D1 (de) 2000-05-04
DE69701571T2 true DE69701571T2 (de) 2000-10-19

Family

ID=9492176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69701571T Expired - Lifetime DE69701571T2 (de) 1996-05-15 1997-05-13 Realisierungsmethode einer dünnschicht aus festem material und anwendung dieser methode

Country Status (7)

Country Link
US (1) US6190998B1 (enExample)
EP (1) EP0902843B1 (enExample)
JP (2) JP4659929B2 (enExample)
KR (1) KR20000011051A (enExample)
DE (1) DE69701571T2 (enExample)
FR (1) FR2748850B1 (enExample)
WO (1) WO1997043461A1 (enExample)

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US6582999B2 (en) 1997-05-12 2003-06-24 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6048411A (en) 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
US6291314B1 (en) * 1998-06-23 2001-09-18 Silicon Genesis Corporation Controlled cleavage process and device for patterned films using a release layer
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US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6333202B1 (en) * 1999-08-26 2001-12-25 International Business Machines Corporation Flip FERAM cell and method to form same
US6391658B1 (en) * 1999-10-26 2002-05-21 International Business Machines Corporation Formation of arrays of microelectronic elements
US6544862B1 (en) * 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
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FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
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US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US6940089B2 (en) * 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
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FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
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FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
JP4794810B2 (ja) * 2003-03-20 2011-10-19 シャープ株式会社 半導体装置の製造方法
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FR2738671B1 (fr) 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
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US6048411A (en) * 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly

Also Published As

Publication number Publication date
EP0902843B1 (fr) 2000-03-29
JP2009010409A (ja) 2009-01-15
FR2748850A1 (fr) 1997-11-21
FR2748850B1 (fr) 1998-07-24
DE69701571D1 (de) 2000-05-04
KR20000011051A (ko) 2000-02-25
US6190998B1 (en) 2001-02-20
WO1997043461A1 (fr) 1997-11-20
EP0902843A1 (fr) 1999-03-24
JP2000510284A (ja) 2000-08-08
JP4659929B2 (ja) 2011-03-30

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